JPS6461309A - Purification of silicon - Google Patents
Purification of siliconInfo
- Publication number
- JPS6461309A JPS6461309A JP21865187A JP21865187A JPS6461309A JP S6461309 A JPS6461309 A JP S6461309A JP 21865187 A JP21865187 A JP 21865187A JP 21865187 A JP21865187 A JP 21865187A JP S6461309 A JPS6461309 A JP S6461309A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- boron
- solidification
- molten
- molten silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 9
- 239000010703 silicon Substances 0.000 title abstract 9
- 238000000746 purification Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 230000008023 solidification Effects 0.000 abstract 4
- 238000007711 solidification Methods 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 238000003756 stirring Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
Landscapes
- Silicon Compounds (AREA)
Abstract
PURPOSE:To obtain a high-purity silicon with minimal boron concentration, by melting a boron-contg. crude silicon followed by adding at least one kind of element selected from Zr, Ti and V to the resulting melt and cooling while stirring to effect solidification. CONSTITUTION:At least one kind of element selected from Zr, Ti and V is added to a boron-contg. molten crude silicon in such quantities as to be ca. 10-1,000 times the stoichiometrically necessary amount for forming the respective borides from the boron present in said molten silicon, and agitated. Thence, said molten silicon is solidified at a rate of <=8mm/min in an inert gas atmosphere and left at rest to affect precipitation, alternatively, the boride formed by stirring said molten silicon is solidified by putting it away from the solidification interface; thus leading to the minimal boron concentration in the silicon mass to the extent of solidification of 70% of the whole molten silicon. Since excess of Zr, Ti and V are very small in the respective equilibrium segregation coefficients, they will be eliminated on the principle of segregated solidification, thus being rarely incorporated into the resultant solid phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21865187A JPS6461309A (en) | 1987-09-01 | 1987-09-01 | Purification of silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21865187A JPS6461309A (en) | 1987-09-01 | 1987-09-01 | Purification of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6461309A true JPS6461309A (en) | 1989-03-08 |
Family
ID=16723288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21865187A Pending JPS6461309A (en) | 1987-09-01 | 1987-09-01 | Purification of silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6461309A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208001A (en) * | 1991-06-20 | 1993-05-04 | Texas Instruments Incorporated | Method for silicon purification |
| JP2003027625A (en) * | 2001-07-11 | 2003-01-29 | Misawa Homes Co Ltd | Fire-resisting damper member and eave soffit fire- resisting structure |
| JP2006206392A (en) * | 2005-01-28 | 2006-08-10 | Nippon Steel Corp | Polycrystalline silicon purification method |
| JP2006219313A (en) * | 2005-02-08 | 2006-08-24 | Nippon Steel Corp | Silicon coagulation purification apparatus and coagulation purification method |
| JP2007130687A (en) * | 2005-08-09 | 2007-05-31 | Mitsubishi Materials Corp | Crucible for melt-casting high purity silicon |
| JP2007131512A (en) * | 2005-08-09 | 2007-05-31 | Mitsubishi Materials Corp | Crucible for high purity silicon melt casting |
| JP2009062275A (en) * | 2008-12-24 | 2009-03-26 | Showa Denko Kk | Purification method of silicon |
-
1987
- 1987-09-01 JP JP21865187A patent/JPS6461309A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5208001A (en) * | 1991-06-20 | 1993-05-04 | Texas Instruments Incorporated | Method for silicon purification |
| JP2003027625A (en) * | 2001-07-11 | 2003-01-29 | Misawa Homes Co Ltd | Fire-resisting damper member and eave soffit fire- resisting structure |
| JP2006206392A (en) * | 2005-01-28 | 2006-08-10 | Nippon Steel Corp | Polycrystalline silicon purification method |
| JP2006219313A (en) * | 2005-02-08 | 2006-08-24 | Nippon Steel Corp | Silicon coagulation purification apparatus and coagulation purification method |
| JP2007130687A (en) * | 2005-08-09 | 2007-05-31 | Mitsubishi Materials Corp | Crucible for melt-casting high purity silicon |
| JP2007131512A (en) * | 2005-08-09 | 2007-05-31 | Mitsubishi Materials Corp | Crucible for high purity silicon melt casting |
| JP2009062275A (en) * | 2008-12-24 | 2009-03-26 | Showa Denko Kk | Purification method of silicon |
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