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JPS6461048A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6461048A
JPS6461048A JP62219415A JP21941587A JPS6461048A JP S6461048 A JPS6461048 A JP S6461048A JP 62219415 A JP62219415 A JP 62219415A JP 21941587 A JP21941587 A JP 21941587A JP S6461048 A JPS6461048 A JP S6461048A
Authority
JP
Japan
Prior art keywords
oxide film
type mos
gate oxide
gate
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219415A
Other languages
Japanese (ja)
Inventor
Shuichi Enomoto
Junji Tajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62219415A priority Critical patent/JPS6461048A/en
Publication of JPS6461048A publication Critical patent/JPS6461048A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a CMOS in which electric characteristics, such as mutual conductance, and ON resistance, are similar and balanced by forming the thickness of the gate oxide film of a p-type MOS smaller than that of the gate oxide film of an n-type MOS. CONSTITUTION:A p-type well 1p is provided on the surface of an n-type silicon substrate 1n, and a field oxide film 2 for isolating elements to partition the surfaces of the well 1p and the substrate 1n is provided. A p-type MOS having a source 3p, a drain 4p formed on the element region of the surface of the substrate 1n and a gate 6p formed through a thin gate oxide film 5p on a channel region is provided. An n-type MOS having a source 3n, a drain 4n formed on the element region of the surface of the well 1p, and a gate 6n formed through a thick gate oxide film 5n on the channel region is provided. After it is covered with an oxide film 7, a contact window is opened, and aluminum wirings 8c, 8b, 8d, 8a are provided. Thus, a CMOS in which the electric characteristics become similar and are balanced is formed.
JP62219415A 1987-09-01 1987-09-01 Semiconductor device Pending JPS6461048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219415A JPS6461048A (en) 1987-09-01 1987-09-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219415A JPS6461048A (en) 1987-09-01 1987-09-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6461048A true JPS6461048A (en) 1989-03-08

Family

ID=16735037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219415A Pending JPS6461048A (en) 1987-09-01 1987-09-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6461048A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523982U (en) * 1991-09-18 1993-03-30 株式会社アルフアトレーデイング Heat-resistant Shintobutsu in a container
EP0818819A1 (en) * 1996-07-12 1998-01-14 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US5866445A (en) * 1997-07-11 1999-02-02 Texas Instruments Incorporated High density CMOS circuit with split gate oxide
JP2001351989A (en) * 2000-06-05 2001-12-21 Nec Corp Method for manufacturing semiconductor device
US6380594B1 (en) 1999-10-19 2002-04-30 Nec Corporation Semiconductor device
JP2006179635A (en) * 2004-12-22 2006-07-06 Nec Electronics Corp CMOS semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182555A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Complementary field effect semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182555A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Complementary field effect semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0523982U (en) * 1991-09-18 1993-03-30 株式会社アルフアトレーデイング Heat-resistant Shintobutsu in a container
EP0818819A1 (en) * 1996-07-12 1998-01-14 Texas Instruments Incorporated Improvements in or relating to semiconductor devices
US5866445A (en) * 1997-07-11 1999-02-02 Texas Instruments Incorporated High density CMOS circuit with split gate oxide
US6380594B1 (en) 1999-10-19 2002-04-30 Nec Corporation Semiconductor device
JP2001351989A (en) * 2000-06-05 2001-12-21 Nec Corp Method for manufacturing semiconductor device
JP2006179635A (en) * 2004-12-22 2006-07-06 Nec Electronics Corp CMOS semiconductor device

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