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JPS6459933A - Semiconductor device, and method and device for ion beam processing for production thereof - Google Patents

Semiconductor device, and method and device for ion beam processing for production thereof

Info

Publication number
JPS6459933A
JPS6459933A JP62217030A JP21703087A JPS6459933A JP S6459933 A JPS6459933 A JP S6459933A JP 62217030 A JP62217030 A JP 62217030A JP 21703087 A JP21703087 A JP 21703087A JP S6459933 A JPS6459933 A JP S6459933A
Authority
JP
Japan
Prior art keywords
processing
depth
regions
ion beam
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62217030A
Other languages
Japanese (ja)
Inventor
Takahiko Takahashi
Hajime Hayakawa
Yoshihiko Okamoto
Fumikazu Ito
Satoshi Haraichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62217030A priority Critical patent/JPS6459933A/en
Priority to EP19880305199 priority patent/EP0295065A3/en
Publication of JPS6459933A publication Critical patent/JPS6459933A/en
Priority to US07/584,180 priority patent/US6753253B1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Welding Or Cutting Using Electron Beams (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to process a high-aspect ratio hole in an accurate depth as well as to control a processing depth with high precision by a method wherein trial processing regions having the same structure in a depth direction and the same hysteresis of formations as those of an element region provided. CONSTITUTION:Trial processing regions 2c of a semiconductor device 2a formed on a semiconductor wafer 2 are positioned right under an ion source 3 by moving properly an X-Y table 1. Then, a work for processing the regions 2c, the area of a processed plane being Ao[mum<2>], is started by irradiating an ion beam 4. This area Ao is set sufficiently large for a necessary processing depth and is set in such a way that the aspect ratio of a recessed part at each processing site is small, that is, in such a way that charged particles or an emission spectrum 4a, which are generated from the processing sites, are detected sufficiently well by a detection means 7.
JP62217030A 1986-06-18 1987-08-31 Semiconductor device, and method and device for ion beam processing for production thereof Pending JPS6459933A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62217030A JPS6459933A (en) 1987-08-31 1987-08-31 Semiconductor device, and method and device for ion beam processing for production thereof
EP19880305199 EP0295065A3 (en) 1987-06-10 1988-06-08 Semiconductor integrated circuit device, method of making same or cutting method for same, and cutting system using energy beam for same
US07/584,180 US6753253B1 (en) 1986-06-18 1990-09-18 Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217030A JPS6459933A (en) 1987-08-31 1987-08-31 Semiconductor device, and method and device for ion beam processing for production thereof

Publications (1)

Publication Number Publication Date
JPS6459933A true JPS6459933A (en) 1989-03-07

Family

ID=16697737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217030A Pending JPS6459933A (en) 1986-06-18 1987-08-31 Semiconductor device, and method and device for ion beam processing for production thereof

Country Status (1)

Country Link
JP (1) JPS6459933A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0470279U (en) * 1990-10-24 1992-06-22
US5189948A (en) * 1991-02-05 1993-03-02 Beltec International Low temperature spiral conduction vapor cooker and process
US5436525A (en) * 1992-12-03 1995-07-25 Litton Systems, Inc. Highly depressed, high thermal capacity, conduction cooled collector
US5664482A (en) * 1996-09-13 1997-09-09 Beltec International Hydrostatically-sealed atmospheric spiral spray cooker
US6320315B1 (en) * 1998-10-22 2001-11-20 Litton Systems, Inc. Ceramic electron collector assembly having metal sleeve for high temperature operation

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0470279U (en) * 1990-10-24 1992-06-22
US5189948A (en) * 1991-02-05 1993-03-02 Beltec International Low temperature spiral conduction vapor cooker and process
US5436525A (en) * 1992-12-03 1995-07-25 Litton Systems, Inc. Highly depressed, high thermal capacity, conduction cooled collector
US5664482A (en) * 1996-09-13 1997-09-09 Beltec International Hydrostatically-sealed atmospheric spiral spray cooker
US6320315B1 (en) * 1998-10-22 2001-11-20 Litton Systems, Inc. Ceramic electron collector assembly having metal sleeve for high temperature operation

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