JPS6459745A - Liquid metal ion source - Google Patents
Liquid metal ion sourceInfo
- Publication number
- JPS6459745A JPS6459745A JP62215453A JP21545387A JPS6459745A JP S6459745 A JPS6459745 A JP S6459745A JP 62215453 A JP62215453 A JP 62215453A JP 21545387 A JP21545387 A JP 21545387A JP S6459745 A JPS6459745 A JP S6459745A
- Authority
- JP
- Japan
- Prior art keywords
- liquid metal
- lmis
- emitter
- heater
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
Abstract
PURPOSE:To extend the lifetime of a liquid metal ion source and enable the stable supply of ion current by using a metal having a high melting point such as W, Mo and Ta with the surface thereof nitrided as the heater and emitter of the source. CONSTITUTION:A metal having a high melting point such as W, Mo and Ta with the surface thereof nitrided is used as a heater 1 and an emitter 2 for a liquid metal ion source LMIS. The LMIS is first heated and cleaned to remove water and oil adhering to the heater 1 and the emitter 2. Then, the LMIS is placed in a vacuum vessel and N2 is introduced therein until the predetermined degree of vacuum is attained, and temperature is raised, thereby conducting heat treatment. As a result, the surface of the heater 1 and emitter 2 of the LMIS or, for example, the surface of W is nitrided and the membrane of an alloy W2N having extremely low reaction with a metal is formed thereon. The lifetime of the surface, therefore, can be extended. Also, wettability with the liquid metal can be maintained, thereby enabling the stable supply of ion current.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215453A JPS6459745A (en) | 1987-08-31 | 1987-08-31 | Liquid metal ion source |
US07/227,255 US4892752A (en) | 1987-08-12 | 1988-08-02 | Method of ion implantation |
DE3855897T DE3855897T2 (en) | 1987-08-12 | 1988-08-11 | Ion implantation method |
EP88307442A EP0303486B1 (en) | 1987-08-12 | 1988-08-11 | Method of ion implantation |
KR1019880010320A KR920005348B1 (en) | 1987-08-12 | 1988-08-12 | Ion implantation method |
US07/371,976 US4946706A (en) | 1987-08-12 | 1989-06-27 | Method of ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215453A JPS6459745A (en) | 1987-08-31 | 1987-08-31 | Liquid metal ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459745A true JPS6459745A (en) | 1989-03-07 |
Family
ID=16672617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62215453A Pending JPS6459745A (en) | 1987-08-12 | 1987-08-31 | Liquid metal ion source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459745A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132632A (en) * | 1981-02-09 | 1982-08-17 | Hitachi Ltd | Ion source |
JPS6059623A (en) * | 1983-09-10 | 1985-04-06 | Anelva Corp | liquid metal ion source |
-
1987
- 1987-08-31 JP JP62215453A patent/JPS6459745A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132632A (en) * | 1981-02-09 | 1982-08-17 | Hitachi Ltd | Ion source |
JPS6059623A (en) * | 1983-09-10 | 1985-04-06 | Anelva Corp | liquid metal ion source |
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