JPS6459215A - Thin film transistor for liquid crystal display - Google Patents
Thin film transistor for liquid crystal displayInfo
- Publication number
- JPS6459215A JPS6459215A JP62215404A JP21540487A JPS6459215A JP S6459215 A JPS6459215 A JP S6459215A JP 62215404 A JP62215404 A JP 62215404A JP 21540487 A JP21540487 A JP 21540487A JP S6459215 A JPS6459215 A JP S6459215A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- gate
- defect
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 4
- 230000001681 protective effect Effects 0.000 abstract 3
- 229910018125 Al-Si Inorganic materials 0.000 abstract 2
- 229910018520 Al—Si Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To prevent an image display part from having a picture element defect and deterioration in picture quality owing to a gate contact resistance defect by forming an electrode protective film of a motor layer on the surface of a gate signal line electrode. CONSTITUTION:A gate insulating film 10 is formed on a transparent insulated substrate 18, a gate electrode film 16 is formed, and then a source area 12, a drain area 13, and a channel area 11 are formed. Then a passivation film 17-1 is formed as the flank protective film for the source and drain areas 12 and 13 and gate insulating film 10. Here, an SiO2 film is formed by an atmospheric CVD method and then a normal Al-Si film is deposited as a gate signal line electrode 2, but an Al-Si base Si rich electrode protective layer 2-1 is formed continuously by sputtering on the surface layer as a protective layer. Then the insulating protective film 17 is formed and contact holes 6, 4, and 9 for the source area, drain area, and gate electrode are bored. Consequently, a defect of a screen and picture quality deterioration due to a gate signal electrode contact defect are precluded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62215404A JPS6459215A (en) | 1987-08-31 | 1987-08-31 | Thin film transistor for liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62215404A JPS6459215A (en) | 1987-08-31 | 1987-08-31 | Thin film transistor for liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6459215A true JPS6459215A (en) | 1989-03-06 |
Family
ID=16671764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62215404A Pending JPS6459215A (en) | 1987-08-31 | 1987-08-31 | Thin film transistor for liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6459215A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1128430A3 (en) * | 2000-02-22 | 2010-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2012142571A (en) * | 2011-12-26 | 2012-07-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US9153352B2 (en) | 2001-07-27 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same |
| US9704996B2 (en) | 2000-04-12 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
1987
- 1987-08-31 JP JP62215404A patent/JPS6459215A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1128430A3 (en) * | 2000-02-22 | 2010-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US9318610B2 (en) | 2000-02-22 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US9869907B2 (en) | 2000-02-22 | 2018-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US9704996B2 (en) | 2000-04-12 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9153352B2 (en) | 2001-07-27 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same |
| US9917107B2 (en) | 2001-07-27 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same |
| US10854636B2 (en) | 2001-07-27 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same |
| JP2012142571A (en) * | 2011-12-26 | 2012-07-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
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