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JPS6455861A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6455861A
JPS6455861A JP21329987A JP21329987A JPS6455861A JP S6455861 A JPS6455861 A JP S6455861A JP 21329987 A JP21329987 A JP 21329987A JP 21329987 A JP21329987 A JP 21329987A JP S6455861 A JPS6455861 A JP S6455861A
Authority
JP
Japan
Prior art keywords
metal layer
metal
connecting hole
layer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21329987A
Other languages
Japanese (ja)
Inventor
Takio Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21329987A priority Critical patent/JPS6455861A/en
Publication of JPS6455861A publication Critical patent/JPS6455861A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To reduce leaking through a junction, by providing a first metal layer, which is deposited on the side of a diffused region in a connecting hole, providing a second metal layer, which covers the first metal layer, as a barrier metal, and providing a third metal layer, which is filled in the connecting hole. CONSTITUTION:A connecting hole 14, which is opened at an upper part, is formed at a position corresponding to a diffused region 12 in an insulating film 13. A tungsten layer 15 is formed at the bottom part of the hole on the side of the diffused region. A barrier metal 16 is formed thereon. The barrier metal 16 comprises a high melting point metal and is formed along the upper surface of the tungsten layer 15 and the side wall surface of the connecting hole 14 so as to have a U-shaped cross section. A tungsten layer 17 is provided in a space surrounded with the barrier metal 16. Since the first metal layer is covered with the second metal layer, which is the barrier metal, reaction between Si on the side of a semiconductor substrate and the third metal layer can be suppressed when the third metal layer is deposited in the connecting hole. Therefore, leaking through the junction between the isolated oxide film and the junction hole can be decreased.
JP21329987A 1987-08-27 1987-08-27 Semiconductor device Pending JPS6455861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21329987A JPS6455861A (en) 1987-08-27 1987-08-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21329987A JPS6455861A (en) 1987-08-27 1987-08-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6455861A true JPS6455861A (en) 1989-03-02

Family

ID=16636825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21329987A Pending JPS6455861A (en) 1987-08-27 1987-08-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6455861A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03230531A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH03244346A (en) * 1990-02-22 1991-10-31 Katsuhei Eguchi Continuous roasting and steaming and device therefor
JPH0685414B2 (en) * 1989-04-17 1994-10-26 ヒューズ・エアクラフト・カンパニー Titanium tungsten and selective CVD tungsten recess interconnection method
US5534730A (en) * 1991-11-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Conductive layer connection structure of a semiconductor device and a method of manufacturing thereof
US5625231A (en) * 1995-03-10 1997-04-29 Advanced Micro Devices, Inc. Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685414B2 (en) * 1989-04-17 1994-10-26 ヒューズ・エアクラフト・カンパニー Titanium tungsten and selective CVD tungsten recess interconnection method
JPH03230531A (en) * 1990-02-06 1991-10-14 Matsushita Electron Corp Manufacture of semiconductor device
JPH03244346A (en) * 1990-02-22 1991-10-31 Katsuhei Eguchi Continuous roasting and steaming and device therefor
US5534730A (en) * 1991-11-11 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Conductive layer connection structure of a semiconductor device and a method of manufacturing thereof
US5625231A (en) * 1995-03-10 1997-04-29 Advanced Micro Devices, Inc. Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology

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