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JPS6454753A - Semiconductor resistor - Google Patents

Semiconductor resistor

Info

Publication number
JPS6454753A
JPS6454753A JP62210188A JP21018887A JPS6454753A JP S6454753 A JPS6454753 A JP S6454753A JP 62210188 A JP62210188 A JP 62210188A JP 21018887 A JP21018887 A JP 21018887A JP S6454753 A JPS6454753 A JP S6454753A
Authority
JP
Japan
Prior art keywords
resistor
voltage
layer
positive
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62210188A
Other languages
Japanese (ja)
Inventor
Susumu Murakami
Teruyuki Kagami
Yoshitaka Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62210188A priority Critical patent/JPS6454753A/en
Publication of JPS6454753A publication Critical patent/JPS6454753A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To extremely reduce the voltage dependency of a resistance value at the time of applying an AC voltage by providing a conductive layer through an insulating film on a resistor of a reverse conductivity type diffused layer on an Si substrate, and connecting reverse diodes from both end electrodes of the resistor to the layer. CONSTITUTION:An AC voltage is applied to the electrode terminals T1, T2 of a diffused layer resistor R. When the t1 is positive, a diode D1 is reversely biased, no voltage is applied to D2, and the terminal T2 and a conductive layer T0 are equal negative potential. When the T2 is positive, the D2 is reversely biased, and the T0 and the T1 become equal negative potential. Thus, the surface of the resistor R is shielded by a predetermined potential to obtain the stability in the resistance value.
JP62210188A 1987-08-26 1987-08-26 Semiconductor resistor Pending JPS6454753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62210188A JPS6454753A (en) 1987-08-26 1987-08-26 Semiconductor resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62210188A JPS6454753A (en) 1987-08-26 1987-08-26 Semiconductor resistor

Publications (1)

Publication Number Publication Date
JPS6454753A true JPS6454753A (en) 1989-03-02

Family

ID=16585241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62210188A Pending JPS6454753A (en) 1987-08-26 1987-08-26 Semiconductor resistor

Country Status (1)

Country Link
JP (1) JPS6454753A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100427924B1 (en) * 2000-10-20 2004-04-28 산요덴키가부시키가이샤 Manufacturing method of a semiconductor device
JP2006284979A (en) * 2005-04-01 2006-10-19 Hitachi Displays Ltd Display apparatus
WO2009007314A1 (en) * 2007-07-06 2009-01-15 Stmicroelectronics Sa Diffused integrated resistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167360A (en) * 1980-05-26 1981-12-23 Mitsubishi Electric Corp Diffused resistance element in semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56167360A (en) * 1980-05-26 1981-12-23 Mitsubishi Electric Corp Diffused resistance element in semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100427924B1 (en) * 2000-10-20 2004-04-28 산요덴키가부시키가이샤 Manufacturing method of a semiconductor device
JP2006284979A (en) * 2005-04-01 2006-10-19 Hitachi Displays Ltd Display apparatus
WO2009007314A1 (en) * 2007-07-06 2009-01-15 Stmicroelectronics Sa Diffused integrated resistor
US8564096B2 (en) 2007-07-06 2013-10-22 Stmicroelectronics Sa Diffused integrated resistor

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