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JPS6454747A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6454747A
JPS6454747A JP21157387A JP21157387A JPS6454747A JP S6454747 A JPS6454747 A JP S6454747A JP 21157387 A JP21157387 A JP 21157387A JP 21157387 A JP21157387 A JP 21157387A JP S6454747 A JPS6454747 A JP S6454747A
Authority
JP
Japan
Prior art keywords
layer
type
contact
poly
brought
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21157387A
Other languages
Japanese (ja)
Inventor
Masahiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP21157387A priority Critical patent/JPS6454747A/en
Publication of JPS6454747A publication Critical patent/JPS6454747A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain an ohmic contact, which does not depend upon the conductivity type of a first layer, by forming a wiring in the laminated structure of first and second conductive layers and connecting only the second layer to an impurity layer. CONSTITUTION:Poly Si 23 is applied onto an SiO2 film 22 on a P-type Si substrate 21, and P is introduced and an N type is formed. A resist mask 24 is executed, and an N<+> layer 26 is shaped through ion implantation. The mask 24 is removed, and the silicide layer 27 of a high-melting-point metal such as W is formed onto the whole surface. The N<+> layer 26 and the W silicide layer 27 are brought into contact directly at that time, and the poly Si layer 23 is brought into contact with the N<+> layer 26 through the layer 27. Accordingly, an excellent ohmic contact can be shaped regardless of the conductivity types of the first conductive layer 23 and the impurity layer 26.
JP21157387A 1987-08-26 1987-08-26 Semiconductor device Pending JPS6454747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21157387A JPS6454747A (en) 1987-08-26 1987-08-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21157387A JPS6454747A (en) 1987-08-26 1987-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6454747A true JPS6454747A (en) 1989-03-02

Family

ID=16608009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21157387A Pending JPS6454747A (en) 1987-08-26 1987-08-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6454747A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237547A (en) * 1987-03-26 1988-10-04 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237547A (en) * 1987-03-26 1988-10-04 Seiko Instr & Electronics Ltd Manufacture of semiconductor device

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