[go: up one dir, main page]

JPS6453400A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS6453400A
JPS6453400A JP21060187A JP21060187A JPS6453400A JP S6453400 A JPS6453400 A JP S6453400A JP 21060187 A JP21060187 A JP 21060187A JP 21060187 A JP21060187 A JP 21060187A JP S6453400 A JPS6453400 A JP S6453400A
Authority
JP
Japan
Prior art keywords
time constant
reference voltage
capacitors
change
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21060187A
Other languages
Japanese (ja)
Other versions
JPH073760B2 (en
Inventor
Yoshikazu Miyawaki
Masanori Hayashigoe
Takeshi Nakayama
Kazuo Kobayashi
Yasushi Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21060187A priority Critical patent/JPH073760B2/en
Publication of JPS6453400A publication Critical patent/JPS6453400A/en
Publication of JPH073760B2 publication Critical patent/JPH073760B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To select whether or not large stress is given on the tunnel oxide film of a memory transistor at need, by changing a time constant by selecting a capacitor which decides the time constant of the change of a reference voltage in a voltage control circuit out of plural capacitors. CONSTITUTION:The voltage control circuit which changes the output of a high voltage generation circuit 20 following after the reference voltage is provided, and plural capacitors C3 and C5 which decide the time constant of the change of the reference voltages are provided. And since it is possible to change the time constant by selecting the capacitors C3 and C5 appropriately out of the plural capacitors, it is possible to shape the output waveform of the high voltage generation circuit that changes following after the reference voltage at need. For example, the comparatively large leading time constant of the reference voltage to be inputted to the negative input part of a comparator 21 is decided by the synthetic capacity of the capacitors C3 and C5 in an ordinary operation, and at the time of testing a memory cell, a transistor T3 is de-energized, and the comparatively small leading time constant of the reference voltage to be inputted to the negative input part of the comparator 21 is decided.
JP21060187A 1987-08-25 1987-08-25 Nonvolatile semiconductor memory device Expired - Lifetime JPH073760B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21060187A JPH073760B2 (en) 1987-08-25 1987-08-25 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21060187A JPH073760B2 (en) 1987-08-25 1987-08-25 Nonvolatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS6453400A true JPS6453400A (en) 1989-03-01
JPH073760B2 JPH073760B2 (en) 1995-01-18

Family

ID=16592028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21060187A Expired - Lifetime JPH073760B2 (en) 1987-08-25 1987-08-25 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH073760B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5375083A (en) * 1993-02-04 1994-12-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including a substrate having a memory cell array surrounded by a well structure
US5535160A (en) * 1993-07-05 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014187838A (en) 2013-03-25 2014-10-02 Toshiba Corp Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5375083A (en) * 1993-02-04 1994-12-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including a substrate having a memory cell array surrounded by a well structure
US5535160A (en) * 1993-07-05 1996-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPH073760B2 (en) 1995-01-18

Similar Documents

Publication Publication Date Title
CN1538453B (en) Booster power circuit
KR940010513A (en) Circuit and Method for Clamping a Boost Signal
US3996482A (en) One shot multivibrator circuit
KR940020423A (en) DYNAMIC RAM, DYNAMIC RAM PLATE VOLTAGE SETTING METHOD, AND INFORMATION PROCESSING SYSTEM
KR920018772A (en) Semiconductor memory
KR950007137A (en) Step-up circuit and nonvolatile semiconductor memory device having the step-up circuit
US4584494A (en) Semiconductor timer
KR19980015269A (en) Internal step-up voltage generator of semiconductor memory device
US5438504A (en) Voltage multiplier circuits or the like
KR940003017A (en) Semiconductor integrated circuit
KR870009385A (en) Semiconductor integrated circuit device
US3959782A (en) MOS circuit recovery time
DE3873235D1 (en) CIRCUIT ARRANGEMENT FOR A REGULATED SWITCHING POWER SUPPLY.
JPS57189397A (en) Semiconductor storage device
JPS57103195A (en) Semiconductor storage device
JPS54140843A (en) Dynamic memory
JPS6453400A (en) Non-volatile semiconductor memory device
EP0068611A1 (en) Substrate-bias voltage generator
JPS57143795A (en) Nonvolatile semiconductor storage device
JP2014079047A (en) Dc/dc converter
US6122205A (en) Voltage regulator and boosting circuit for reading a memory cell at low voltage levels
JPS5443633A (en) Memory erasing method
KR0170286B1 (en) Voltage converter circuit of semiconductor memory device
US3886468A (en) High gain amplifier
SU635620A1 (en) Timer