JPS6450392A - Manufacture of transparent thin film el element - Google Patents
Manufacture of transparent thin film el elementInfo
- Publication number
- JPS6450392A JPS6450392A JP62207788A JP20778887A JPS6450392A JP S6450392 A JPS6450392 A JP S6450392A JP 62207788 A JP62207788 A JP 62207788A JP 20778887 A JP20778887 A JP 20778887A JP S6450392 A JPS6450392 A JP S6450392A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- transparent electrode
- annealing
- sputtering
- luminous layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000137 annealing Methods 0.000 abstract 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000005546 reactive sputtering Methods 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
PURPOSE:To reduce the manufacturing processes and to improve the productivity by using the annealing of a rear side transparent electrode for annealing a luminous layer concurrently. CONSTITUTION:A front side transparent electrode (ITO thin film) 2 is formed on a glass substrate 1 in a reactive sputtering in Ar+O2 atmosphere by using an IT target. After that, a vacuum annealing is applied at 400 to 650 deg.C, and the transparent electrode 2 is made into strip form by etching. Over the transparent electrode 2, the first insulating thin film 3 which consists of SiO2, Si3N4, and the like, is formed in a sputtering, a vacuum evaporation, or the like. Then, a luminous layer 4 is formed by using ZnSi:Mn sintered pellets in an electron beam vacuum evaporation. After that, the second insulating thin film 5 which consists of Si3N4, Al2O3, and the like is formed in the manner same as the first insulating thin film 3. Then, as a rear side transparent electrode 6, an ITO thin film is formed by reactive-sputtering an IT target in Ar+O2 atmosphere. Following that, the transparent electrode 6 is made into strip form with an etching solution including hydrochloric acid, and annealed in a vacuum. Since this annealing is used for annealing the ZnS of the luminous layer 4 concurrently, the condition is preferable to be 570 to 650 deg.C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207788A JPS6450392A (en) | 1987-08-20 | 1987-08-20 | Manufacture of transparent thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207788A JPS6450392A (en) | 1987-08-20 | 1987-08-20 | Manufacture of transparent thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450392A true JPS6450392A (en) | 1989-02-27 |
Family
ID=16545511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62207788A Pending JPS6450392A (en) | 1987-08-20 | 1987-08-20 | Manufacture of transparent thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450392A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03205786A (en) * | 1990-01-08 | 1991-09-09 | Fuji Electric Co Ltd | Manufacture of double insulating thin film electroluminescence device |
| JPH04148634A (en) * | 1990-10-09 | 1992-05-21 | Keiichiro Murofushi | Device for drawing noodle line |
-
1987
- 1987-08-20 JP JP62207788A patent/JPS6450392A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03205786A (en) * | 1990-01-08 | 1991-09-09 | Fuji Electric Co Ltd | Manufacture of double insulating thin film electroluminescence device |
| JPH04148634A (en) * | 1990-10-09 | 1992-05-21 | Keiichiro Murofushi | Device for drawing noodle line |
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