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JPS645015A - Manufacture of integrated circuit element - Google Patents

Manufacture of integrated circuit element

Info

Publication number
JPS645015A
JPS645015A JP62160679A JP16067987A JPS645015A JP S645015 A JPS645015 A JP S645015A JP 62160679 A JP62160679 A JP 62160679A JP 16067987 A JP16067987 A JP 16067987A JP S645015 A JPS645015 A JP S645015A
Authority
JP
Japan
Prior art keywords
gas
film
deposited
thick
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62160679A
Other languages
Japanese (ja)
Inventor
Katsuji Iguchi
Masahiko Urai
Chiyako Shiga
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62160679A priority Critical patent/JPS645015A/en
Publication of JPS645015A publication Critical patent/JPS645015A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To facilitate manufacturing process, and reduce wiring resistance and contact resistance, by forming an amorphous tungsten nitride film as a barrier metal to isolate a semiconductor and a metal wiring, by applying a vapor phase reaction method of plasma excitation. CONSTITUTION:A memory cell part comprizes the following; a capacitor composed of a plate electrode 1 and a capacitor insulating film 2, a switching transistor composed of word lines 3a, 3b constituting a gate electrode, a source 4, and a drain 5, an insulating film 6 made of a boron phosphorus silicate glass (BPSG) film, and a contact hole 10 to connect the source 4 to an AlSi wiring constituting a bit line. By a plasma CVD equipment applying a gas in which tungusten hexafluoride gas, nitrogen gas and hydrogen gas are mixed with a ratio of 1:3:5, to material gas, a WVx thin film 20 of 800Angstrom thick is deposited, and next an Al thin film 21 of 8000Angstrom thick is deposited.
JP62160679A 1987-06-26 1987-06-26 Manufacture of integrated circuit element Pending JPS645015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160679A JPS645015A (en) 1987-06-26 1987-06-26 Manufacture of integrated circuit element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160679A JPS645015A (en) 1987-06-26 1987-06-26 Manufacture of integrated circuit element

Publications (1)

Publication Number Publication Date
JPS645015A true JPS645015A (en) 1989-01-10

Family

ID=15720122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160679A Pending JPS645015A (en) 1987-06-26 1987-06-26 Manufacture of integrated circuit element

Country Status (1)

Country Link
JP (1) JPS645015A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03255624A (en) * 1990-03-05 1991-11-14 Nec Corp Manufacture of semiconductor device
US5487923A (en) * 1991-07-16 1996-01-30 Korea Institute Of Science And Technology Method for depositing tungsten nitride thin films for formation of metal wirings of silicon semiconductor elements
EP0840363A1 (en) * 1996-10-31 1998-05-06 Texas Instruments Incorporated Method for fabricating a conductive diffusion barrier layer by PECVD
WO1999000830A1 (en) * 1997-06-30 1999-01-07 Applied Materials, Inc. Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US6162715A (en) * 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6838376B2 (en) 1997-11-05 2005-01-04 Tokyo Electron Limited Method of forming semiconductor wiring structures
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742970A (en) * 1980-07-23 1982-03-10 Zellweger Uster Ag Method apparatus for binding fiber bundle
JPS632319B2 (en) * 1982-11-11 1988-01-18 Kao Kk

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742970A (en) * 1980-07-23 1982-03-10 Zellweger Uster Ag Method apparatus for binding fiber bundle
JPS632319B2 (en) * 1982-11-11 1988-01-18 Kao Kk

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03255624A (en) * 1990-03-05 1991-11-14 Nec Corp Manufacture of semiconductor device
US5487923A (en) * 1991-07-16 1996-01-30 Korea Institute Of Science And Technology Method for depositing tungsten nitride thin films for formation of metal wirings of silicon semiconductor elements
EP0840363A1 (en) * 1996-10-31 1998-05-06 Texas Instruments Incorporated Method for fabricating a conductive diffusion barrier layer by PECVD
WO1999000830A1 (en) * 1997-06-30 1999-01-07 Applied Materials, Inc. Improved deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US6162715A (en) * 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6251190B1 (en) 1997-06-30 2001-06-26 Applied Materials, Inc. Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
JP2002507327A (en) * 1997-06-30 2002-03-05 アプライド マテリアルズ インコーポレイテッド Tungsten nitride deposition using plasma pretreatment in a chemical vapor deposition chamber
US6872429B1 (en) 1997-06-30 2005-03-29 Applied Materials, Inc. Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber
US6838376B2 (en) 1997-11-05 2005-01-04 Tokyo Electron Limited Method of forming semiconductor wiring structures
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film

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