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JPS6449234A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6449234A
JPS6449234A JP20517887A JP20517887A JPS6449234A JP S6449234 A JPS6449234 A JP S6449234A JP 20517887 A JP20517887 A JP 20517887A JP 20517887 A JP20517887 A JP 20517887A JP S6449234 A JPS6449234 A JP S6449234A
Authority
JP
Japan
Prior art keywords
oxide nitride
hydrogen
films
wirings
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20517887A
Other languages
Japanese (ja)
Other versions
JP2659193B2 (en
Inventor
Akira Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62205178A priority Critical patent/JP2659193B2/en
Publication of JPS6449234A publication Critical patent/JPS6449234A/en
Application granted granted Critical
Publication of JP2659193B2 publication Critical patent/JP2659193B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To reduce the quantity of hydrogen desorbed by a heat treatment and avoid the creation of defects by a method wherein the hydrogen content of silicon oxide nitride films formed on Al wirings by plasma vapor growth is predetermined to be lower than 1.8X10<22>cm<-3>. CONSTITUTION:First layer Al wirings 12 are formed on the surface insulating film of a semiconductor substrate 11 and a first plasma oxide nitride film 13 is formed on them. Second layer Al wirings 14 are formed on the oxide nitride film 13 and a second plasma oxide nitride film 15 is formed on them. At that time, the hydrogen content of the oxide nitride films 13 and 15 is predetermined to be lower than 1.8X10<22>cm<-3>. Then very little hydrogen is created in the films even if the films are subjected to a heat treatment. With this constitution, various defects such as a swollen film, missing Al and the like caused by hydrogen can be avoided.
JP62205178A 1987-08-20 1987-08-20 Semiconductor device Expired - Fee Related JP2659193B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205178A JP2659193B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205178A JP2659193B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6449234A true JPS6449234A (en) 1989-02-23
JP2659193B2 JP2659193B2 (en) 1997-09-30

Family

ID=16502713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205178A Expired - Fee Related JP2659193B2 (en) 1987-08-20 1987-08-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2659193B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038888A1 (en) * 2008-09-30 2010-04-08 東京エレクトロン株式会社 Silicon oxynitride film and process for production thereof, computer-readable storage medium, and plasma cvd device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152132A (en) * 1981-03-13 1982-09-20 Fujitsu Ltd Chemical vapor growing method
JPS6039837A (en) * 1983-08-12 1985-03-01 Nec Corp Growth of insulating film
JPS60224231A (en) * 1984-04-20 1985-11-08 Hitachi Ltd semiconductor equipment
JPS61194827A (en) * 1985-02-25 1986-08-29 Oki Electric Ind Co Ltd Diffused protective film forming method
JPS6262529A (en) * 1985-09-12 1987-03-19 Toppan Printing Co Ltd Forming method for silicon nitride film
JPS6276537A (en) * 1985-09-27 1987-04-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62186540A (en) * 1986-02-12 1987-08-14 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152132A (en) * 1981-03-13 1982-09-20 Fujitsu Ltd Chemical vapor growing method
JPS6039837A (en) * 1983-08-12 1985-03-01 Nec Corp Growth of insulating film
JPS60224231A (en) * 1984-04-20 1985-11-08 Hitachi Ltd semiconductor equipment
JPS61194827A (en) * 1985-02-25 1986-08-29 Oki Electric Ind Co Ltd Diffused protective film forming method
JPS6262529A (en) * 1985-09-12 1987-03-19 Toppan Printing Co Ltd Forming method for silicon nitride film
JPS6276537A (en) * 1985-09-27 1987-04-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS62186540A (en) * 1986-02-12 1987-08-14 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038888A1 (en) * 2008-09-30 2010-04-08 東京エレクトロン株式会社 Silicon oxynitride film and process for production thereof, computer-readable storage medium, and plasma cvd device

Also Published As

Publication number Publication date
JP2659193B2 (en) 1997-09-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees