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JPS6448464A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6448464A
JPS6448464A JP62204012A JP20401287A JPS6448464A JP S6448464 A JPS6448464 A JP S6448464A JP 62204012 A JP62204012 A JP 62204012A JP 20401287 A JP20401287 A JP 20401287A JP S6448464 A JPS6448464 A JP S6448464A
Authority
JP
Japan
Prior art keywords
type
layer
base layer
type base
insulating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62204012A
Other languages
Japanese (ja)
Inventor
Tetsuo Iijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62204012A priority Critical patent/JPS6448464A/en
Publication of JPS6448464A publication Critical patent/JPS6448464A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the breakdown voltage of a semiconductor device without the on-resistance being increased, by forming a p<+> type well layer so that the depth thereof is at most equal to that of a p type base layer including a channel part. CONSTITUTION:On an n type semiconductor substrate 1, a power MOSFET comprises an insulating gate 3, a p type base layer 5 including a channel part 5a which is formed on the surface of the semiconductor substrate directly below the insulating gate, an n<+> type source layer 6 which is formed on a part of the surface of the p type layer, and a p<+> type well layer 7 which overlaps with the p type base layer 5 without including the channel part 5a. Now, the p<+> type diffusion layer 7 is formed by implanting impurities, B ions, into the surface of the substrate prior to the formation of the insulating gate, and the diffusion depth thereof is then so controlled as to be less than that of the p type base layer 5. As a result, the distance between the adjacent MOS cells is shortened, and the electric field relaxing effect is increased, thereby the breakdown voltage of the device is enhanced.
JP62204012A 1987-08-19 1987-08-19 Semiconductor device Pending JPS6448464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62204012A JPS6448464A (en) 1987-08-19 1987-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62204012A JPS6448464A (en) 1987-08-19 1987-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6448464A true JPS6448464A (en) 1989-02-22

Family

ID=16483309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62204012A Pending JPS6448464A (en) 1987-08-19 1987-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6448464A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0890994A2 (en) * 1990-12-21 1999-01-13 SILICONIX Incorporated Power MOSFET and fabrication method
JP2000156383A (en) * 1998-11-09 2000-06-06 Internatl Rectifier Corp Low voltage MOSFET, method of manufacturing the same, and circuit thereof
WO2000052750A2 (en) 1999-03-04 2000-09-08 Infineon Technologies Ag Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0890994A2 (en) * 1990-12-21 1999-01-13 SILICONIX Incorporated Power MOSFET and fabrication method
EP0890994A3 (en) * 1990-12-21 2000-02-02 SILICONIX Incorporated Power MOSFET and fabrication method
JP2000156383A (en) * 1998-11-09 2000-06-06 Internatl Rectifier Corp Low voltage MOSFET, method of manufacturing the same, and circuit thereof
WO2000052750A2 (en) 1999-03-04 2000-09-08 Infineon Technologies Ag Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor
WO2000052750A3 (en) * 1999-03-04 2001-08-09 Infineon Technologies Ag Method for producing a body area for a vertical mos transistor array with reduced specific starting resistor
US6670244B2 (en) 1999-03-04 2003-12-30 Infineon Technologies Ag Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity

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