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JPS6444086A - Photo amplifier - Google Patents

Photo amplifier

Info

Publication number
JPS6444086A
JPS6444086A JP20147087A JP20147087A JPS6444086A JP S6444086 A JPS6444086 A JP S6444086A JP 20147087 A JP20147087 A JP 20147087A JP 20147087 A JP20147087 A JP 20147087A JP S6444086 A JPS6444086 A JP S6444086A
Authority
JP
Japan
Prior art keywords
light
laser
converting
directivity
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20147087A
Other languages
Japanese (ja)
Inventor
Hiroshi Komatsu
Katsuhiro Teraishi
Tomio Sonehara
Osamu Yokoyama
Kunihiro Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20147087A priority Critical patent/JPS6444086A/en
Publication of JPS6444086A publication Critical patent/JPS6444086A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain an emitted light whose light intensity is larger than that of incident one and has a high directivity, by integrating a photoelectric conversion part and a surface emitting type semiconductor laser oppositely on a semiconductor substrate. CONSTITUTION:In an optical amplifier for amplifying an incident light or converting a wavelength to output a light, a photoelectric converter 103 for converting an incident light 115 into an electric signal and a surface emitting type semiconductor laser 102 for converting an electric signal into a laser light are provided, and the converter 103 and the laser 102 face to be integrated on a semiconductor substrate. That is, since the laser light is internally amplified, the light intensity is strong even with a low current different from a natural radiating light of an LED, and the light is radiated in a resonator direction. Accordingly, its directivity is high as a coherence light to be easily condensed. Thus, even if a signal current from a phototransistor is less, the light intensity of the radiated light can be sufficiently strengthened, the directivity of the light can be enhanced, and even if the lights are two-dimensionally arrayed, an optical amplifier which can raise its integration can be obtained.
JP20147087A 1987-08-12 1987-08-12 Photo amplifier Pending JPS6444086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20147087A JPS6444086A (en) 1987-08-12 1987-08-12 Photo amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20147087A JPS6444086A (en) 1987-08-12 1987-08-12 Photo amplifier

Publications (1)

Publication Number Publication Date
JPS6444086A true JPS6444086A (en) 1989-02-16

Family

ID=16441615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20147087A Pending JPS6444086A (en) 1987-08-12 1987-08-12 Photo amplifier

Country Status (1)

Country Link
JP (1) JPS6444086A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999843A (en) * 1990-01-09 1991-03-12 At&T Bell Laboratories Vertical semiconductor laser with lateral electrode contact
US5034954A (en) * 1989-10-20 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
WO1992010867A1 (en) * 1990-12-14 1992-06-25 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
JP2015018925A (en) * 2013-07-10 2015-01-29 ソフトバンクテレコム株式会社 Wavelength conversion element and wavelength conversion device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5034954A (en) * 1989-10-20 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US4999843A (en) * 1990-01-09 1991-03-12 At&T Bell Laboratories Vertical semiconductor laser with lateral electrode contact
WO1992010867A1 (en) * 1990-12-14 1992-06-25 Bell Communications Research, Inc. Phase-locked array of reflectivity-modulated surface-emitting lasers
JP2015018925A (en) * 2013-07-10 2015-01-29 ソフトバンクテレコム株式会社 Wavelength conversion element and wavelength conversion device

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