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JPS6444085A - Arrayed semiconductor laser - Google Patents

Arrayed semiconductor laser

Info

Publication number
JPS6444085A
JPS6444085A JP20146887A JP20146887A JPS6444085A JP S6444085 A JPS6444085 A JP S6444085A JP 20146887 A JP20146887 A JP 20146887A JP 20146887 A JP20146887 A JP 20146887A JP S6444085 A JPS6444085 A JP S6444085A
Authority
JP
Japan
Prior art keywords
laser
light emitting
semiconductor lasers
substrate
honeycomb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20146887A
Other languages
Japanese (ja)
Inventor
Tomio Sonehara
Osamu Yokoyama
Kunihiro Inoue
Hiroshi Komatsu
Katsuhiro Teraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20146887A priority Critical patent/JPS6444085A/en
Publication of JPS6444085A publication Critical patent/JPS6444085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a large output laser which can be used similarly to a single chip by forming a laser structure in which semiconductor lasers are disposed more densely. CONSTITUTION:The light emitting units 101 of a semiconductor laser are disposed at the center of a honeycomb. Further, the laser has a structure 201 in which lights are radiated from a substrate surface for forming the laser or the surface of a thin film formed on the substrate. A plurality of the semiconductor lasers are formed on the same substrate. Thus, high output and single peak monolithically arrayed semiconductor lasers are obtained, and can be easily hybrid-integrated by employing a surface emitting type laser, and light emitting units are formed fundamentally at the center of a honeycomb to raise its mounting density and light emitting density.
JP20146887A 1987-08-12 1987-08-12 Arrayed semiconductor laser Pending JPS6444085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20146887A JPS6444085A (en) 1987-08-12 1987-08-12 Arrayed semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20146887A JPS6444085A (en) 1987-08-12 1987-08-12 Arrayed semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6444085A true JPS6444085A (en) 1989-02-16

Family

ID=16441585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20146887A Pending JPS6444085A (en) 1987-08-12 1987-08-12 Arrayed semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6444085A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671238A1 (en) * 1990-12-28 1992-07-03 Thomson Csf METHOD OF MAKING SURFACE - EMITTING SEMICONDUCTOR LASERS, AND LASERS OBTAINED BY THE PROCESS
WO1992021069A1 (en) * 1991-05-14 1992-11-26 Seiko Epson Corporation Image-forming device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2671238A1 (en) * 1990-12-28 1992-07-03 Thomson Csf METHOD OF MAKING SURFACE - EMITTING SEMICONDUCTOR LASERS, AND LASERS OBTAINED BY THE PROCESS
US5204870A (en) * 1990-12-28 1993-04-20 Thomson-Csf Method of implementation of surface-emission semiconductor lasers, and lasers obtained by the method
WO1992021069A1 (en) * 1991-05-14 1992-11-26 Seiko Epson Corporation Image-forming device
US5610647A (en) * 1991-05-14 1997-03-11 Seigo Epson Corporation Image forming apparatus including a plural laser beam scanning apparatus

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