JPS6442143A - Noncontact carrier mobility measuring device - Google Patents
Noncontact carrier mobility measuring deviceInfo
- Publication number
- JPS6442143A JPS6442143A JP19807387A JP19807387A JPS6442143A JP S6442143 A JPS6442143 A JP S6442143A JP 19807387 A JP19807387 A JP 19807387A JP 19807387 A JP19807387 A JP 19807387A JP S6442143 A JPS6442143 A JP S6442143A
- Authority
- JP
- Japan
- Prior art keywords
- specimen
- transparent electrode
- frequency
- voltage
- noncontact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 abstract 2
- 238000005215 recombination Methods 0.000 abstract 2
- 230000006798 recombination Effects 0.000 abstract 2
- 238000011156 evaluation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000004576 sand Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To be suitable for the in-process evaluation by measuring a frequency at a bent part in a frequency characteristic of an AC photoelectric voltage of a wafer whose surface recombination speed on the rear is made large. CONSTITUTION:A height of a spacer 3 is selected in such a way that a uniform gap of 20-100mum can be secured between the upper surface of a wafer 4 and a transparent electrode 5. If the intermittent light 7' of a frequency f is irradiated, an AC-like photoelectric voltage is generated at the specimen 4; the AC photoelectric voltage can be detected from a transparent electrode 2 and the transparent electrode 5; a noncontact measurement can be executed on the surface of the specimen. If a voltage between the transparent electrode 2 and the transparent electrode 5 is measured by changing the frequency of the intermittent light, a frequency fb at a bent part can be decided by the voltage. For this process, the rear of the specimen 4 is treated by a sand lapping operation or the like so that a surface recombination speed can be nearly infinitely large. On the other hand, a thickness of the specimen is measured while one part of the incident intensity on the specimen 4 is monitored by using a photodetector 11 through a beam splitter 9 and the transmitted light of the specimen 4 is detected by using a photodetector 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19807387A JPS6442143A (en) | 1987-08-10 | 1987-08-10 | Noncontact carrier mobility measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19807387A JPS6442143A (en) | 1987-08-10 | 1987-08-10 | Noncontact carrier mobility measuring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442143A true JPS6442143A (en) | 1989-02-14 |
Family
ID=16385069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19807387A Pending JPS6442143A (en) | 1987-08-10 | 1987-08-10 | Noncontact carrier mobility measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442143A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100365421C (en) * | 2005-11-04 | 2008-01-30 | 北京交通大学 | A Method for Measuring Carrier Mobility in Organic Semiconductors in the Frequency Domain |
-
1987
- 1987-08-10 JP JP19807387A patent/JPS6442143A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100365421C (en) * | 2005-11-04 | 2008-01-30 | 北京交通大学 | A Method for Measuring Carrier Mobility in Organic Semiconductors in the Frequency Domain |
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