JPS644073A - Power transistor with protective function against overheating - Google Patents
Power transistor with protective function against overheatingInfo
- Publication number
- JPS644073A JPS644073A JP62157599A JP15759987A JPS644073A JP S644073 A JPS644073 A JP S644073A JP 62157599 A JP62157599 A JP 62157599A JP 15759987 A JP15759987 A JP 15759987A JP S644073 A JPS644073 A JP S644073A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- make
- tunnel current
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000013021 overheating Methods 0.000 title abstract 2
- 230000009993 protective function Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To use a below tunnel current on an abnormal rise in temperature and to make a gate voltage close to a source voltage or to make a base voltage close to an emitter voltage so that a power transistor is cut off to realize protection against overheating, by forming an insulating film on a gate electrode thinly in degree of making a FowlerNordheim tunnel current flow therein. CONSTITUTION:A polycrystalline Si gate 4 on a gate oxide film 3 formed on an n-type layer 2 is used as a mask so as to perform double diffusion of a (p) well 5 serving as a channel region and an n<+> source 6 serving as a source region so that a vertical type MOSFET is formed. After an SiO2 film 7 is piled by a CVD method or the like, the region 8 where tunnel MOS structure is formed is removed by an etching method and then a poly Si 4's surface on this region is heat-oxidized to form an oxide film 9 thinly in degree of for example 150Angstrom in thickness. When a positive bias is applied to the side of the semiconductor in MOS structure formed in this way, a potential wall is made thinner to make a Fowler-Nordheim tunnel current flow therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157599A JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157599A JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS644073A true JPS644073A (en) | 1989-01-09 |
Family
ID=15653236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62157599A Pending JPS644073A (en) | 1987-06-26 | 1987-06-26 | Power transistor with protective function against overheating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644073A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493144A (en) * | 1992-03-31 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Field progammable device with contact openings |
| US6236088B1 (en) * | 1997-06-30 | 2001-05-22 | Intersil Corporation | Semiconductor device gate structure for thermal overload protection |
-
1987
- 1987-06-26 JP JP62157599A patent/JPS644073A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5493144A (en) * | 1992-03-31 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Field progammable device with contact openings |
| US5856233A (en) * | 1992-03-31 | 1999-01-05 | Stmicroelectronics, Inc. | Method of forming a field programmable device |
| US6236088B1 (en) * | 1997-06-30 | 2001-05-22 | Intersil Corporation | Semiconductor device gate structure for thermal overload protection |
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