JPS6422060A - Solid-state image sensing device and its manufacture - Google Patents
Solid-state image sensing device and its manufactureInfo
- Publication number
- JPS6422060A JPS6422060A JP62178412A JP17841287A JPS6422060A JP S6422060 A JPS6422060 A JP S6422060A JP 62178412 A JP62178412 A JP 62178412A JP 17841287 A JP17841287 A JP 17841287A JP S6422060 A JPS6422060 A JP S6422060A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- silicon layer
- treating
- gate insulating
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To realize high resolution, high speed operation, and low voltage driving, by forming a silicon layer on a quartz substrate, polycrystallizing the silicon layer by heat-treating, and forming a gate insulating film. CONSTITUTION:Amorphous silicon, microcrystalline silicon etc., are made in the form of a film on a quartz substrate 101, by a method such as CVD method, plasma CVD method, vapor deposition method, EB vapor deposition method, MBE method and sputtering method. By heat-treating the above silicon layer 102 at 500-1200 deg.C, the amorphous silicon and the microcrystalline silicon are polycrystallized to form a polysrystalline silicon layer 102'. By thermal oxidizing method, a gate insulating film 103 is formed. Thereby, crystal grain diameter of the polycrystalline silicon can be grown up to 1mum or more. As the result, the mobility of electron can be made controllable in a wide range according to the crystal grain diameter, so that the high resolution and the high speed operation are faciliated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62178412A JPS6422060A (en) | 1987-07-17 | 1987-07-17 | Solid-state image sensing device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62178412A JPS6422060A (en) | 1987-07-17 | 1987-07-17 | Solid-state image sensing device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6422060A true JPS6422060A (en) | 1989-01-25 |
Family
ID=16048042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62178412A Pending JPS6422060A (en) | 1987-07-17 | 1987-07-17 | Solid-state image sensing device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6422060A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448577B1 (en) | 1990-10-15 | 2002-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with grain boundaries |
-
1987
- 1987-07-17 JP JP62178412A patent/JPS6422060A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6448577B1 (en) | 1990-10-15 | 2002-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with grain boundaries |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07105501B2 (en) | Transistor manufacturing method | |
| US6913649B2 (en) | System and method for forming single-crystal domains using crystal seeds | |
| JPH02103925A (en) | Manufacturing method of semiconductor device | |
| US4868140A (en) | Semiconductor device and method of manufacturing the same | |
| JP3178715B2 (en) | Method for manufacturing thin film semiconductor device | |
| JPS6433973A (en) | Method of evaporating amorphous silicon for forming intermediate level dielectric of semiconductor memory device | |
| JPH01187874A (en) | Method for manufacturing semiconductor devices | |
| JPS6422060A (en) | Solid-state image sensing device and its manufacture | |
| JPH04139728A (en) | Manufacture of polycrystalline field-effect transistor | |
| JPH08172196A (en) | Thin film transistor and manufacturing method thereof | |
| JP2867402B2 (en) | Method for manufacturing semiconductor device | |
| JP2687393B2 (en) | Method for manufacturing semiconductor device | |
| JPS6425573A (en) | Thin film transistor | |
| JPS63146436A (en) | Manufacture of thin film transistor | |
| JPH03104209A (en) | Manufacture of semiconductor device | |
| JP2709376B2 (en) | Method for manufacturing non-single-crystal semiconductor | |
| JPH06120499A (en) | Thin film transistor, liquid crystal display device and manufacture of same transistor | |
| JPH04305940A (en) | Manufacture of thin-film transistor | |
| JP2592984B2 (en) | Manufacturing method of silicon thin film | |
| JPH0320084A (en) | Manufacture of thin film transistor | |
| KR960026967A (en) | Polycrystalline Thin Film Transistor and Manufacturing Method Thereof | |
| KR940010184A (en) | Method of manufacturing polycrystalline silicon thin film | |
| JP2699578B2 (en) | Method of manufacturing semiconductor thin film and method of manufacturing thin film transistor using the same | |
| JPH03248434A (en) | Manufacture of semiconductor device | |
| JPH03132074A (en) | Manufacture of thin film and thin-film transistor |