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JPS6422050A - Method for filling groove - Google Patents

Method for filling groove

Info

Publication number
JPS6422050A
JPS6422050A JP17948187A JP17948187A JPS6422050A JP S6422050 A JPS6422050 A JP S6422050A JP 17948187 A JP17948187 A JP 17948187A JP 17948187 A JP17948187 A JP 17948187A JP S6422050 A JPS6422050 A JP S6422050A
Authority
JP
Japan
Prior art keywords
groove
oxide film
film
polysilicon
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17948187A
Other languages
Japanese (ja)
Inventor
Nobuo Aoi
Ichiro Nakao
Mikio Nishio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP17948187A priority Critical patent/JPS6422050A/en
Publication of JPS6422050A publication Critical patent/JPS6422050A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To preclude the occurrence of recesses or slits by burying the groove with an insulating film and a semiconductor thin film, and greatly reducing the step of the groove utilizing the difference in the etching characteristics of the insulating film and the semiconductor thin film, thereby easily enabling planarization. CONSTITUTION:After anisotropically etching a groove of a pattern in a silicon substrate 1, a silicon oxide film 2 is deposited by an LPCVD method. Then, polysilicon 3 is deposited by the LPCVD method to completely fill the groove. Next, the polysilicon 3 is wholly etched to dig the polysilicon 3 surface in the groove about 0.1mum from the silicon substrate 1 surface. Then, the oxide film 2 is anisotropically etched to leave on the side wall part. At this time, the edge of the oxide film 2 is rounded off. Further, an oxide film 4 is deposited by the LPCVD method. At this time, since the groove is filled with the oxide film having uniform film qualities, no recesses or slits occur at the time of etching back.
JP17948187A 1987-07-17 1987-07-17 Method for filling groove Pending JPS6422050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17948187A JPS6422050A (en) 1987-07-17 1987-07-17 Method for filling groove

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17948187A JPS6422050A (en) 1987-07-17 1987-07-17 Method for filling groove

Publications (1)

Publication Number Publication Date
JPS6422050A true JPS6422050A (en) 1989-01-25

Family

ID=16066591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17948187A Pending JPS6422050A (en) 1987-07-17 1987-07-17 Method for filling groove

Country Status (1)

Country Link
JP (1) JPS6422050A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001029282A3 (en) * 1999-10-20 2001-11-22 Cvd Systems Inc Fluid processing system
US6802397B1 (en) * 1997-03-13 2004-10-12 Automotive Products Italia (Sv) Spa Automatic cable latching device for drum brake levers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6802397B1 (en) * 1997-03-13 2004-10-12 Automotive Products Italia (Sv) Spa Automatic cable latching device for drum brake levers
WO2001029282A3 (en) * 1999-10-20 2001-11-22 Cvd Systems Inc Fluid processing system

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