[go: up one dir, main page]

JPS6419664A - Ion beam device - Google Patents

Ion beam device

Info

Publication number
JPS6419664A
JPS6419664A JP62175633A JP17563387A JPS6419664A JP S6419664 A JPS6419664 A JP S6419664A JP 62175633 A JP62175633 A JP 62175633A JP 17563387 A JP17563387 A JP 17563387A JP S6419664 A JPS6419664 A JP S6419664A
Authority
JP
Japan
Prior art keywords
target
potential
electrode
secondary electrons
equal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62175633A
Other languages
Japanese (ja)
Inventor
Ryuzo Aihara
Haruo Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP62175633A priority Critical patent/JPS6419664A/en
Priority to GB8815359A priority patent/GB2215907B/en
Priority to US07/215,739 priority patent/US4918358A/en
Publication of JPS6419664A publication Critical patent/JPS6419664A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable secondary electrons to be detected efficiently by so constituting that an electrode almost equal in potential to a target irradiated with ion beams is arranged and a secondary electron detector is arranged in a space equal in potential between the target and the electrode and the detector is applied with voltage to collect secondary electrons. CONSTITUTION:An auxiliary electrode 15 arranged between an objective lens 5 and a target 10 is kept equal in potential to the target 10, thus a space equal in potential is formed between the auxiliary electrode 15 and the target. A secondary electron detector consisting of a multi-channel plate 16 and a detection electrode 17 is arranged between the auxiliary electrode 15 and the target 10. Secondary electrons generated with the irradiation of ion beams to the target 10 are invited to the incidence plane 16a of a microchannel plate 16 in positive potential higher by 1-1.2kV than the potential of the target and emitted from an emission plane 16b after being amplified in the microchannel plate 16 and then detected by the detection electrode 17. Hereby, secondary electrons can be detected efficiently.
JP62175633A 1987-07-14 1987-07-14 Ion beam device Pending JPS6419664A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62175633A JPS6419664A (en) 1987-07-14 1987-07-14 Ion beam device
GB8815359A GB2215907B (en) 1987-07-14 1988-06-28 Apparatus using a charged-particle beam
US07/215,739 US4918358A (en) 1987-07-14 1988-07-06 Apparatus using charged-particle beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175633A JPS6419664A (en) 1987-07-14 1987-07-14 Ion beam device

Publications (1)

Publication Number Publication Date
JPS6419664A true JPS6419664A (en) 1989-01-23

Family

ID=15999496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175633A Pending JPS6419664A (en) 1987-07-14 1987-07-14 Ion beam device

Country Status (1)

Country Link
JP (1) JPS6419664A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006185661A (en) * 2004-12-27 2006-07-13 Hitachi High-Technologies Corp Charged particle beam equipment
JP2014089953A (en) * 2012-10-25 2014-05-15 Fei Co Retarding field analyzer integral with particle beam column
JP2015204181A (en) * 2014-04-14 2015-11-16 株式会社日立ハイテクノロジーズ Ion beam device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006185661A (en) * 2004-12-27 2006-07-13 Hitachi High-Technologies Corp Charged particle beam equipment
JP2014089953A (en) * 2012-10-25 2014-05-15 Fei Co Retarding field analyzer integral with particle beam column
JP2015204181A (en) * 2014-04-14 2015-11-16 株式会社日立ハイテクノロジーズ Ion beam device

Similar Documents

Publication Publication Date Title
DE3878828D1 (en) SECONDARY ELECTRON DETECTOR FOR USE IN A GAS ENVIRONMENT.
SE8801144L (en) JONPLASMAKANON
JPS6371537U (en)
JPS6419664A (en) Ion beam device
US3310678A (en) Method of producing electron multiplication utilizing an amplification cycle
GB1222577A (en) Improvements in and relating to ion cyclotron resonance mass spectrometers
GB1303136A (en)
GB976781A (en) Ultra high vacuum ion gauge
JPS6419665A (en) Ion beam device
JP2578446B2 (en) Secondary electron detector
JP2817277B2 (en) X-ray gun
GB1530031A (en) Charged particle beam scanning device
JPS5774957A (en) Ionizing device of mass spectrometer
JP3055160B2 (en) Neutral particle mass spectrometer
JPS529487A (en) Sample analyzer
JPH05251035A (en) Spatter neutral particle mass spectrometry device
GB1147174A (en) Particle detectors of use for detecting positive ions
JPS5765660A (en) Ion beam device
JPH0622109B2 (en) Secondary ion mass spectrometer
JPH01186745A (en) Ion source for mass spectrometer
JPH0355239Y2 (en)
JPS5580255A (en) Charged particle beam processing device
JPS5616853A (en) Surface analysis unit
JPH03269943A (en) Simultaneous detection type mass analyzer
JPH01221848A (en) Charged particle ray device