JPS6415921A - X-ray exposure method - Google Patents
X-ray exposure methodInfo
- Publication number
- JPS6415921A JPS6415921A JP62173190A JP17319087A JPS6415921A JP S6415921 A JPS6415921 A JP S6415921A JP 62173190 A JP62173190 A JP 62173190A JP 17319087 A JP17319087 A JP 17319087A JP S6415921 A JPS6415921 A JP S6415921A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- secondary electrons
- ray resist
- worked
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 206010070834 Sensitisation Diseases 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000008313 sensitization Effects 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To absorb secondary electrons generated from a foundation layer by the irradiation with X rays by a secondary-electron absorbing layer, and to prevent the unnecessary sensitization of an X-ray resist by secondary electrons by forming the secondary-electron absorbing layer between the foundation layer to be worked on a semiconductor substrate and the X-ray resist. CONSTITUTION:A foundation layer 3 to be worked, a flattening layer 4 shaped for removing irregularities on a semiconductor substrate 1, a secondary-electron absorbing layer 6 consisting of SiN and an X-ray resist 5 are formed successively onto a pattern 2 shaped in a preprocess on the semiconductor substrate 1. The secondary-electron absorbing layer 6 absorbs secondary electrons generated when the foundation layer 3 to be worked composed of a high melting point metal receives X rays, and has no effect of secondary electrons on the X-ray resist 5, and secondary electrons are absorbed by the layer 6, and material simple substances in atomic numbers of thirty or less or these complexes are preferable as materials difficult to generate secondary electrons by the irradiation with X rays and substances such as C, SiN, Al2O3, BN or the like are effective.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173190A JPS6415921A (en) | 1987-07-09 | 1987-07-09 | X-ray exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62173190A JPS6415921A (en) | 1987-07-09 | 1987-07-09 | X-ray exposure method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6415921A true JPS6415921A (en) | 1989-01-19 |
Family
ID=15955763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62173190A Pending JPS6415921A (en) | 1987-07-09 | 1987-07-09 | X-ray exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6415921A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798382A (en) * | 1993-09-30 | 1995-04-11 | Toshiba Glass Co Ltd | Fluorescent glass dosimeter |
| KR20110003268A (en) | 2009-07-03 | 2011-01-11 | 가부시키가이샤 키엔스 | Coriolis Mass Flow Meter |
| US8365614B2 (en) | 2009-07-06 | 2013-02-05 | Keyence Corporation | Coriolis mass flow meter having a support frame installed between the pair of vibrating tubes |
-
1987
- 1987-07-09 JP JP62173190A patent/JPS6415921A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0798382A (en) * | 1993-09-30 | 1995-04-11 | Toshiba Glass Co Ltd | Fluorescent glass dosimeter |
| KR20110003268A (en) | 2009-07-03 | 2011-01-11 | 가부시키가이샤 키엔스 | Coriolis Mass Flow Meter |
| US8365613B2 (en) | 2009-07-03 | 2013-02-05 | Keyence Corporation | Coriolis mass flow meter having external vibration isolation member |
| US8365614B2 (en) | 2009-07-06 | 2013-02-05 | Keyence Corporation | Coriolis mass flow meter having a support frame installed between the pair of vibrating tubes |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5299776A (en) | Radiation sensitive high polymeric material | |
| GR3003911T3 (en) | ||
| JPS6415921A (en) | X-ray exposure method | |
| JPS5427369A (en) | Pattern formation method | |
| JPS5237553A (en) | Method for improving the life time of irradiation window of a reactor for treating exhaust gas irradiated with radiation | |
| Galloway et al. | Radiation levels associated with advanced lithographic techniques | |
| JPS5417015A (en) | Radiation sensitive composite | |
| JPS5375163A (en) | Improving method for life of window foil of irradiataion window and incidencewindow in treating apparatus of radiation irradiating type for exhaust gas | |
| JPS5367673A (en) | Exchanging method for window foil of incidence window of reactor fortreating exhaust gas irradiated with radioactive rays | |
| JPS5417014A (en) | Radiation sensitive composite | |
| JPS5325797A (en) | Irradiating device for rotary, transporting irradiation ray | |
| JPS56112729A (en) | Exposure of electron beam | |
| JPS5664336A (en) | Minute pattern forming method | |
| JPS5240300A (en) | Collector of charged particle beam device | |
| JPS5237554A (en) | Irradiation method of exhaust gas with electron beam | |
| JPS53125695A (en) | Exposing method for electron rays | |
| JPS5669823A (en) | Impurity-adding method for semiconductor | |
| JPS61160935A (en) | X-ray exposure method | |
| JPS52121979A (en) | Ultraviolet ray irradiation apparatus which can adjust angle of irradi ation | |
| JPS5361269A (en) | Heat treatment of compound semiconductor | |
| JPS5340195A (en) | Irradiating method of radioactive ray | |
| JPS5690529A (en) | Treatment of semiconductor device | |
| JPS52104889A (en) | X-ray generating apparatus | |
| JPS52100872A (en) | Fabrication of mask for x-ray exposure | |
| JPS5321247A (en) | Cross-linking of polyethylene |