JPS641271A - Memory cell - Google Patents
Memory cellInfo
- Publication number
- JPS641271A JPS641271A JP62157294A JP15729487A JPS641271A JP S641271 A JPS641271 A JP S641271A JP 62157294 A JP62157294 A JP 62157294A JP 15729487 A JP15729487 A JP 15729487A JP S641271 A JPS641271 A JP S641271A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- memory capacitor
- memory
- fet
- become
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- 230000010354 integration Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To obtain the capacity of a memory capacitor sufficient for a memory cell with a half area of a conventional memory capacitor for realizing high integration, by making a silicon oxide film become the memory capacitor of two-layered structure. CONSTITUTION:A field oxide film 2 for element isolation, a source-drain region 3 an FET, the first silicon oxide film 4 to become a memory capacitor, a gate oxide film 5 of the FET and the first polycrystalline silicon film 6 to become an electrode of the memory capacitor are formed respectively on a silicon substrate 1. Then, the second silicon oxide film 7 is formed by oxidizing the upper part of the first polycrystalline silicon film 6 with a thermal oxidation method, and thereon the third polycrystalline silicon film 8 is formed so as to be electrically connected with the source side of the FET. Thereby, a memory cell structure having two memory capacitors like an equivalent circuit can be obtained so as to reduce an area of a conventional memory capacitor to half and to realize high integration of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157294A JPS641271A (en) | 1987-06-23 | 1987-06-23 | Memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157294A JPS641271A (en) | 1987-06-23 | 1987-06-23 | Memory cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH011271A JPH011271A (en) | 1989-01-05 |
| JPS641271A true JPS641271A (en) | 1989-01-05 |
Family
ID=15646516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62157294A Pending JPS641271A (en) | 1987-06-23 | 1987-06-23 | Memory cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS641271A (en) |
-
1987
- 1987-06-23 JP JP62157294A patent/JPS641271A/en active Pending
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