[go: up one dir, main page]

JPS6411360A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS6411360A
JPS6411360A JP62166782A JP16678287A JPS6411360A JP S6411360 A JPS6411360 A JP S6411360A JP 62166782 A JP62166782 A JP 62166782A JP 16678287 A JP16678287 A JP 16678287A JP S6411360 A JPS6411360 A JP S6411360A
Authority
JP
Japan
Prior art keywords
insulating film
groove
shaped capacitor
connection part
gate electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166782A
Other languages
Japanese (ja)
Inventor
Nagatoshi Ooki
Touhachi Makino
Toru Kaga
Hideo Sunami
Akihiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP62166782A priority Critical patent/JPS6411360A/en
Publication of JPS6411360A publication Critical patent/JPS6411360A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To simplify a manufacturing process and to reduce an area of a cell by a method wherein a word line of a memory cell having a groove-shaped capacitor is formed by a first conductive layer and a connection part between the groove-shaped capacitor and a switching MOS transistor is formed by a second conductive layer. CONSTITUTION:After a groove-shaped capacitor having an accumulation electrode 38 and a capacitor insulating film 37 has been formed, an insulating film 39 is formed only on the surface. Gate electrodes 40a, 40b, 40c are processed together with an insulating film 41 and are formed; after that, source-drain impurity regions 42a, 42b are formed. Then, an insulating film is applied; an insulating film 43' is left only on side walls of the gate electrodes 40a, 40b, 40c; a connection part 44a is formed. It is possible to remove the insulating film on the source-drain impurity region 42b and on the accumulation electrode 38 in a self-aligned manner; it is possible to simplify a manufacturing process. In addition, it is possible to make a layout without keeping an interval between the connection part 44a and the gate electrodes 40a and 40b; it is possible to reduce a distance between the gate electrode 40a and a groove-shaped capacitor 10a to a minimum; an area of a cell can be reduced.
JP62166782A 1987-07-06 1987-07-06 Semiconductor memory device Pending JPS6411360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166782A JPS6411360A (en) 1987-07-06 1987-07-06 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166782A JPS6411360A (en) 1987-07-06 1987-07-06 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS6411360A true JPS6411360A (en) 1989-01-13

Family

ID=15837578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166782A Pending JPS6411360A (en) 1987-07-06 1987-07-06 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6411360A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629485A (en) * 1992-03-30 1994-02-04 Toshiba Corp Semiconductor device and manufacture thereof
JPH06252359A (en) * 1993-03-01 1994-09-09 Toshiba Corp Manufacture of semiconductor device
US5410169A (en) * 1990-02-26 1995-04-25 Kabushiki Kaisha Toshiba Dynamic random access memory having bit lines buried in semiconductor substrate
KR100292279B1 (en) * 1997-07-22 2001-09-17 다니구찌 이찌로오, 기타오카 다카시 Semiconductor device and its manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5410169A (en) * 1990-02-26 1995-04-25 Kabushiki Kaisha Toshiba Dynamic random access memory having bit lines buried in semiconductor substrate
JPH0629485A (en) * 1992-03-30 1994-02-04 Toshiba Corp Semiconductor device and manufacture thereof
US5691550A (en) * 1992-03-30 1997-11-25 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US5959324A (en) * 1992-03-30 1999-09-28 Kabushiki Kaisha Toshiba Semiconductor device including an improved terminal structure
JPH06252359A (en) * 1993-03-01 1994-09-09 Toshiba Corp Manufacture of semiconductor device
KR100292279B1 (en) * 1997-07-22 2001-09-17 다니구찌 이찌로오, 기타오카 다카시 Semiconductor device and its manufacturing method

Similar Documents

Publication Publication Date Title
EP0235705A3 (en) Self-aligned ultra high-frequency field-effect transistor, and method for manufacturing the same
HK43297A (en) A mos transistor having a composite gate electrode and method of fabrication
KR930005257A (en) Thin film field effect element and its manufacturing method
JPS6411360A (en) Semiconductor memory device
JPS6457675A (en) Vertical field-effect transistor
EP0364818A3 (en) Method for making a polysilicon transistor
JPS5683075A (en) Insulating gate type field-effect transistor circuit device
JPS6431456A (en) Semiconductor device
KR970003952A (en) Static random access memory and manufacturing method thereof
JPS6437058A (en) Insulated-gate field-effect transistor
JPS6428870A (en) Manufacture of field-effect transistor
JPS6439065A (en) Thin film field-effect transistor
GB1441004A (en) Integrated storage circuits
JPS6459864A (en) Mos transistor
JPS6489366A (en) Semiconductor device
KR0131720B1 (en) Semiconductor device
JPS5710265A (en) Field effect transistor
JPS6477158A (en) Memory device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS57211779A (en) Field effect transistor
JPS6450568A (en) Semiconductor device
JPS647661A (en) Semiconductor device
JPS61112658U (en)
JPS55102274A (en) Insulated gate field effect transistor
JPS6481359A (en) Mos type semiconductor integrated circuit device