JPS6411345A - Formation of contact between interconnections - Google Patents
Formation of contact between interconnectionsInfo
- Publication number
- JPS6411345A JPS6411345A JP16719187A JP16719187A JPS6411345A JP S6411345 A JPS6411345 A JP S6411345A JP 16719187 A JP16719187 A JP 16719187A JP 16719187 A JP16719187 A JP 16719187A JP S6411345 A JPS6411345 A JP S6411345A
- Authority
- JP
- Japan
- Prior art keywords
- film
- interconnection
- contact
- hole
- interconnections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To suppress contact resistance between the first and second interconnections so that it becomes sufficiently small by removing the surface of the first conductor interconnection up to a prescribed depth after performing a process wherein a through hole is formed and then, by forming thin films for use in the second conductor interconnection in multilayer interconnections. CONSTITUTION:In a state where a semiconductor substrate 1, a SiO2 film A2, the first Al interconnection 3, a SiO2 film B4, a photoresist film 5, a through hole 6, and a high resistance layer 7 are formed, reactive ion etching is carried out with a SiCl4 gas. Its treatment is performed on condition that an Al film of only about 0.1mum is etched. In this way, a part of about 0.1mum thick at the surface of a contact part of the first Al interconnection 3 is removed. (it is shown as an Al removal part 8). Then an aluminum metallic film is deposited in the same way that found conventionally and the second Al film 9 is formed. Thus, the high resistance layer 7 which has been formed at the surface of the contact part of the first Al interconnection 3 is removed together with the Al removal part 8 and the first Al interconnection 3 is connected with the second part Al film 9 at the part of the through hole 6 and then contact resistance between the above two parts can be suppressed so that it may become sufficiently small without exception.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16719187A JPS6411345A (en) | 1987-07-03 | 1987-07-03 | Formation of contact between interconnections |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16719187A JPS6411345A (en) | 1987-07-03 | 1987-07-03 | Formation of contact between interconnections |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411345A true JPS6411345A (en) | 1989-01-13 |
Family
ID=15845118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16719187A Pending JPS6411345A (en) | 1987-07-03 | 1987-07-03 | Formation of contact between interconnections |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411345A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183378A (en) * | 1993-12-24 | 1995-07-21 | Nec Corp | Multilayer wiring structure and fabrication thereof |
| EP0691678A3 (en) * | 1994-07-08 | 1997-10-01 | Applied Materials Inc | Method of etching contact holes in a dielectric layer by plasma, with removal of residues |
-
1987
- 1987-07-03 JP JP16719187A patent/JPS6411345A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183378A (en) * | 1993-12-24 | 1995-07-21 | Nec Corp | Multilayer wiring structure and fabrication thereof |
| EP0691678A3 (en) * | 1994-07-08 | 1997-10-01 | Applied Materials Inc | Method of etching contact holes in a dielectric layer by plasma, with removal of residues |
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