JPS6411323A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To make a high-concentration impurity diffusion layer formable with a small amount of light radiation, by using plasma discharge to decompose an impurity gas and heaping impurity atoms on a semiconductor substrate and next by using light radiation to heat the substrate and to diffuse the impurities into the substrate. CONSTITUTION:A semiconductor substrate 6 as a sample is mounted on a susceptor 7 inside a plasma discharge chamber 1, and an impurity gas 9 is introduced into the plasma discharge chamber 1 from an introduction port 8, and this gas is decomposed by plasma discharge 13 generated between both electrodes 4 and 5, and the impurity atoms are heaped in quantity on a surface of the semiconductor substrate 6. Next the semiconductor substrate 6 is carried to a light radiation chamber 2 which is in the atmosphere of vacuum or an inactive gas such as Ar, and pulse laser beams 12 are radiated through a light transmitting window 11 to the surface of the semiconductor substrate 6 on which an impurity atom heaped film is formed, so that the surface of the substrate is fused to diffuse the impurity atoms into the semiconductor substrate 6 and to form an impurity diffusion layer on the surface of the semiconductor substrate. Since the light radiation chamber 2 is separated from the plasma discharge chamber 1, the light transmitting window 11 is prevented from being contaminated due to the sticking of the impurities, so that the pulse laser beams 12 of prescribed energy can be radiated rightly on the surface of the semiconductor substrate.