JPS6396925A - Apparatus for cleaning wafer - Google Patents
Apparatus for cleaning waferInfo
- Publication number
- JPS6396925A JPS6396925A JP24210386A JP24210386A JPS6396925A JP S6396925 A JPS6396925 A JP S6396925A JP 24210386 A JP24210386 A JP 24210386A JP 24210386 A JP24210386 A JP 24210386A JP S6396925 A JPS6396925 A JP S6396925A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- stage
- gas
- vibrated
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims description 7
- 235000012431 wafers Nutrition 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 19
- 239000000428 dust Substances 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、シリコンウェハその他のウェハに、清浄化処
理、即ちその表面に付着するダスト粒子を除去するクリ
ーニング処理を施す装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for performing a cleaning process on a silicon wafer or other wafer, that is, a cleaning process for removing dust particles adhering to the surface thereof.
(従来の技術)
従来シリコンウェハその他のウェハに、真空処理その他
の、1理を施す手段として、真空処理槽内、或はこ1t
に連なる搬送路上その他の適所に、ウェハステージを備
えてこれに該ウェハを載置すると共に真空チャックその
他を介して固定自在とする式のものは知られる。(Prior Art) Conventionally, silicon wafers and other wafers are subjected to vacuum processing or other processing in a vacuum processing tank or in a vacuum processing tank.
There is known a type in which a wafer stage is provided on a conveyance path or other appropriate location connected to the wafer stage, on which the wafer is placed and can be fixed freely via a vacuum chuck or the like.
然し乍ら、この場合、該ウェハに清浄化処理、即ちその
表面に付着するダスト粒子を除去する処理を施す手段と
しては、該ウェハを水で清浄する式を一般とするもので
、かかるものでは次のような不都合を伴なう。However, in this case, the means for cleaning the wafer, that is, the treatment for removing dust particles adhering to its surface, is generally to clean the wafer with water, and in such a case, the following method is used: accompanied by such inconvenience.
(発明が解決しようとする問題点)
即ち、かかる手段によれば、該ウェハはその都度類ステ
ージから取外ずされるを要して面倒であると共に、該清
浄によるも多少ともダスト粒子が残存し、この残存する
粒子は該表面との問に侵入する水分により、該表面上に
更に強固に付着した状態となり勝ちである不都合を伴う
。(Problems to be Solved by the Invention) That is, according to such means, the wafer must be removed from the stage each time, which is troublesome, and even after the cleaning, some dust particles remain. However, the remaining particles tend to become more firmly attached to the surface due to moisture entering the gap between the particles and the surface, which is a disadvantage.
(問題点を解決するための手段)
本発明はかかる不都合のない装置を得ることをその目的
としたもので、真空処理槽内、或はこれに連なる搬送路
上その他の適所に、ウェハステージを備えて、これにシ
リコンウェハその他のウェハを載置すると共に真空チャ
ックその他を介して固定自在とするものにおいて、該ス
テージの側方に、ニアブロアその他の圧力気体の供給源
に給気通路を介して連なるジェットノズルその他の開口
を備えて、その前方に生ずる該気体の流れを該ウェハの
表面に作用させるようにし、更に該ステージを超音波発
生器にホーンを介して連なる振動板に構成して、該ウェ
ハに該振動板を介して振動を作用させるようにして成る
。(Means for Solving the Problems) The present invention aims to provide an apparatus free from such inconveniences, and it is an object of the present invention to provide a wafer stage in a vacuum processing tank, a conveyance path connected thereto, or any other suitable location. A silicon wafer or other wafer can be placed on this stage and fixed via a vacuum chuck or the like, and the stage is connected to a near blower or other pressure gas supply source via an air supply passage on the side of the stage. A jet nozzle or other opening is provided to cause the gas flow generated in front of the jet nozzle to act on the surface of the wafer, and the stage is configured as a diaphragm connected to an ultrasonic generator via a horn. Vibration is applied to the wafer via the diaphragm.
(作 用)
かくて、ウェハの表面には気体の流れが作用するもので
、該表面上に付着するダスト粒子は該気体の流れに伴わ
れて除去されると共に、この際該ウェハには振動板を介
して振動を作用されるもので、該振動は該粒子を該表面
上から剥離する作用を営むと共に該表面上に生じ易い該
気体の流れの境界層を乱すべく作用し、かくて該粒子の
除去を一層良好にすることが出来る。(Function) Thus, a gas flow acts on the surface of the wafer, and the dust particles adhering to the surface are removed along with the gas flow, and at this time, the wafer is subjected to vibrations. Vibration is applied through the plate, and the vibration has the effect of exfoliating the particles from the surface and also acts to disturb the boundary layer of the gas flow that tends to occur on the surface, thus Particles can be removed even better.
(実施例) 本発明の実施例を別紙図面に付説明する。(Example) Embodiments of the present invention will be described with reference to the attached drawings.
第1図はその1例を示すもので、(1)は真空処理槽の
上流側或は下流側の搬送ライン上、或はクリーンベンチ
内等の適所に用意されるウェハステージを示し、シリコ
ンウェハその他のウェハ(2)を該ステージ(1)上に
載置すると共に、連通路(3)を介して図示しない真空
ポンプに連らなる真空チャック(4)を介して該ステー
ジ(1〉上に着脱自在に固定するようにした。Figure 1 shows one example. (1) shows a wafer stage prepared at an appropriate location such as on the upstream or downstream side of the vacuum processing tank, on the transfer line, or inside a clean bench. Another wafer (2) is placed on the stage (1) and placed on the stage (1) via a vacuum chuck (4) connected to a vacuum pump (not shown) via a communication path (3). It is fixed so that it can be attached and detached.
該ステージ(1)の側方に、ニアブロア、N2タンクそ
の他の圧力気体の供給源(5)に給気通路(6)を介し
て連なるジェットノズル式の開口(Dを備えて、その前
方に生ずる該気体の流れを、該つエバ(2)の表面に作
用させるようにし、かくて、該表面上に予め付着するダ
スト粒子は、該気体の流れに伴われて除去されるように
した。これを換言すれば、該ウェハ(→は所謂エアプロ
一式のクリーニング作用を与えられるようにした。A jet nozzle-type opening (D) is provided on the side of the stage (1), which is connected to a near blower, N2 tank, or other pressure gas supply source (5) via an air supply passage (6), and a jet nozzle opening (D) is provided in front of the stage (1). The gas flow was made to act on the surface of the Eva (2), so that dust particles preliminarily deposited on the surface were removed along with the gas flow. In other words, the wafer (→) can be given the cleaning action of a so-called air processor.
この場合、該気体の流れは、該ウェハ(2)の表面に沿
った定常流となり、該表面近傍に境界層を生じ、これは
時として数10ミクロンの厚さとなり、問題とされる1
ミクロン以下の粒子に対し必ずしも有効に作用しないこ
とが考えられる。In this case, the gas flow becomes a steady flow along the surface of the wafer (2), creating a boundary layer near the surface, which is sometimes several tens of microns thick, and the problem is
It is conceivable that it does not necessarily act effectively on particles smaller than microns.
本発明によれば、かかる点に鑑み、該ステージ(1)を
、その下側に備える超音波発生器(8)にホーン(9)
を介して連結されて、該発生器(8)の出力によれば振
動する振動板に構成させ、かくて該ウェハ(りは該振動
板を介して所定の振動を作用されるようにし、この振動
によれば該表面上の粒子はそれから剥離する傾向を与え
られると共に前記した境界層が乱される傾向となり、か
くて該粒子の除去が一層良好に行われるようにした。According to the present invention, in view of this point, the stage (1) is equipped with a horn (9) attached to the ultrasonic generator (8) provided below the stage (1).
is connected to the wafer (8) to form a diaphragm that vibrates according to the output of the generator (8), so that a predetermined vibration is applied via the diaphragm to the wafer (8). The vibrations tended to cause the particles on the surface to detach therefrom and to disturb the boundary layer described above, thus allowing better removal of the particles.
第2図及び第3図は他の1例を示すもので、この場合、
該ウェハステージ(1)はその下側の該発生器(8)と
共に外周の真空処理層(10内に設けられると共に、該
処理槽(IG内は真空ポンプ0に連通されて排気自在に
構成されるようにし、更に前記した開口(Dは該槽(1
0内の一側壁に設けられると共にその他側壁にはこれに
対向して排気通路(121が開口されるようにした。尚
この場合、該供給源(5)はエアブロアから成ると共に
、これに直列にフィルタ(5a)が備えられるようにし
た。Figures 2 and 3 show another example; in this case,
The wafer stage (1) is provided in a vacuum processing layer (10) on the outer periphery together with the generator (8) below it, and the processing tank (IG is configured to be freely evacuated by communicating with a vacuum pump 0). Furthermore, the above-mentioned opening (D is the tank (1)
An exhaust passage (121) is provided on one side wall of the interior of 0, and an exhaust passage (121) is opened in the other side wall opposite to this.In this case, the supply source (5) consists of an air blower, and an A filter (5a) is provided.
残余の点は先のものと特に異ならない。The remaining points are not particularly different from the previous ones.
かくて、該ウェハ(2)は、該開口(nを介して該気体
の流れを作用されると共に、該振動板を介して振動を作
用されて、その表面に付着するダスト粒子の除去が行わ
れるもので、この点は先の実施例と特に異ならないが、
本実施例によれば該気体の流れは、該層aG内の各側の
側壁上にも作用して、これに予め付着したダスト粒子に
ついても、これを除去すべく作用する。この場合、該側
壁上の該粒子の除去を更に良好にすべく、外側壁の外側
にも超音波発生器(13を備えて、該発生器a3の出力
によりこれに振動が与えるようにすることも可能である
。Thus, the wafer (2) is subjected to the gas flow through the opening (n) and is also subjected to vibration through the diaphragm to remove dust particles adhering to its surface. This point is not particularly different from the previous embodiment, but
According to this embodiment, the gas flow also acts on the side walls on each side within the layer aG, and acts to remove dust particles that have previously adhered thereto. In this case, in order to further improve the removal of the particles on the side wall, an ultrasonic generator (13) is also provided on the outside of the outer wall so that the output of the generator a3 gives vibration to it. is also possible.
第4図はその変形例を示すもので、この場合、該給気通
路(6)と該排気通路0bとは互に連結されて全体とし
て循環通路を作るようにし、これにN2ガスその他のガ
スを導くべく、該ガスのボンベ(5b)が接続されるよ
うにしたが、残余の点は先のものと特に異ならない。FIG. 4 shows a modification example, in which the air supply passage (6) and the exhaust passage 0b are connected to each other to form a circulation passage as a whole, and N2 gas or other gas is The gas cylinder (5b) was connected in order to introduce the gas, but the remaining points are not particularly different from the previous one.
(発明の効果)
このように本発明によるときは、ウェハをウェハステー
ジ上に載置して固定した状態において、その表面に気体
の流れを作用させて該表面上に予め付着するダスト粒子
を除去するようにしたもので、該ウェハをその都度該ス
テージ上から取外して水で洗浄する従来のものの前記し
た不都合を無くし得られ、更に該ウェハステージは超音
波発生器の出力側に連なる振動板に構成されて該ウェハ
にそれによる振動を作用させるもので、該粒子の除去を
一層良好且高能率にする等の効果を有する。(Effects of the Invention) According to the present invention, when a wafer is placed on a wafer stage and fixed, a gas flow is applied to the surface of the wafer to remove dust particles that have previously adhered to the surface. This eliminates the above-mentioned disadvantages of the conventional method in which the wafer is removed from the stage each time and washed with water, and furthermore, the wafer stage is mounted on a diaphragm connected to the output side of the ultrasonic generator. The vibration is applied to the wafer, which has the effect of making the removal of the particles even better and more efficient.
第1図は本発明装置の1例の説明線図、第2図は他の1
例の説明線図、第3図はその要部の拡大図、第4図はそ
の変形例の説明線図である。
(1)・・・ウェハステージ (り・・・ウェハ (4
)真空チャック (5)・・・圧力気体の供給WA
(6)・・・給気通路(7)・・・開 口 (8)・・
・超音波発生器 (9)・・・ホーン第1図
第2図
第3図FIG. 1 is an explanatory diagram of one example of the device of the present invention, and FIG. 2 is an explanatory diagram of another example.
An explanatory diagram of an example, FIG. 3 is an enlarged view of the main part thereof, and FIG. 4 is an explanatory diagram of a modification thereof. (1)...Wafer stage (ri...Wafer (4)
) Vacuum chuck (5)...Pressure gas supply WA
(6)...Air supply passage (7)...Opening (8)...
・Ultrasonic generator (9)...Horn Figure 1 Figure 2 Figure 3
Claims (1)
に、ウェハステージを備えて、これにシリコンウェハそ
の他のウェハを載置すると共に真空チャックその他を介
して固定自在とするものにおいて、該ステージの側方に
、エアブロアその他の圧力気体の供給源に給気通路を介
して連なるジェットノズルその他の開口を備えて、その
前方に生ずる該気体の流れを該ウェハの表面に作用させ
るようにし、更に該ステージを超音波発生器にホーンを
介して連なる振動板に構成して、該ウェハに該振動板を
介して振動を作用させるようにして成るウェハの清浄化
処理装置A wafer stage is provided in a vacuum processing tank, or on a conveyance path connected thereto, or at any other suitable location, on which silicon wafers or other wafers can be placed and fixed via a vacuum chuck or the like; A jet nozzle or other opening connected to an air blower or other pressure gas supply source via an air supply passage is provided on the side of the wafer so that the gas flow generated in front thereof acts on the surface of the wafer, and A wafer cleaning processing apparatus comprising: a diaphragm connected to an ultrasonic generator via a horn;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24210386A JPS6396925A (en) | 1986-10-14 | 1986-10-14 | Apparatus for cleaning wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24210386A JPS6396925A (en) | 1986-10-14 | 1986-10-14 | Apparatus for cleaning wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6396925A true JPS6396925A (en) | 1988-04-27 |
Family
ID=17084344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24210386A Pending JPS6396925A (en) | 1986-10-14 | 1986-10-14 | Apparatus for cleaning wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6396925A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04326545A (en) * | 1991-04-09 | 1992-11-16 | Internatl Business Mach Corp <Ibm> | Decontaminating device and method |
US6766813B1 (en) * | 2000-08-01 | 2004-07-27 | Board Of Regents, The University Of Texas System | Apparatus and method for cleaning a wafer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515620A (en) * | 1978-07-20 | 1980-02-02 | Fujitsu Ltd | Washing method |
JPS55102233A (en) * | 1979-01-30 | 1980-08-05 | Matsushita Electric Ind Co Ltd | Removing method of dust |
-
1986
- 1986-10-14 JP JP24210386A patent/JPS6396925A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5515620A (en) * | 1978-07-20 | 1980-02-02 | Fujitsu Ltd | Washing method |
JPS55102233A (en) * | 1979-01-30 | 1980-08-05 | Matsushita Electric Ind Co Ltd | Removing method of dust |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04326545A (en) * | 1991-04-09 | 1992-11-16 | Internatl Business Mach Corp <Ibm> | Decontaminating device and method |
US6766813B1 (en) * | 2000-08-01 | 2004-07-27 | Board Of Regents, The University Of Texas System | Apparatus and method for cleaning a wafer |
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