JPS6396655A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS6396655A JPS6396655A JP24340186A JP24340186A JPS6396655A JP S6396655 A JPS6396655 A JP S6396655A JP 24340186 A JP24340186 A JP 24340186A JP 24340186 A JP24340186 A JP 24340186A JP S6396655 A JPS6396655 A JP S6396655A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- thin film
- hydrophilic
- substrate
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 claims abstract description 29
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical group [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 229920003986 novolac Polymers 0.000 claims description 2
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 7
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 125000001165 hydrophobic group Chemical group 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000003125 aqueous solvent Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- -1 siloxane compound Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- XTXNWQHMMMPKKO-UHFFFAOYSA-N tert-butyl 2-phenylethenyl carbonate Chemical compound CC(C)(C)OC(=O)OC=CC1=CC=CC=C1 XTXNWQHMMMPKKO-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体素子の製造や印刷版等に利用するため
、任意の基板上へ化学反応を用い、選択的にパターン状
の膜形成を行なう、パターン形成方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to selectively forming a patterned film on an arbitrary substrate using a chemical reaction in order to be used in the manufacture of semiconductor devices, printing plates, etc. The present invention relates to a pattern forming method.
従来の技術
従来、半導体素子製造や印刷版製造におけるレジストパ
ターンや原版となる樹脂パターンの製造方法は、基板上
に光照射により重合、または分解する樹脂膜を形成し、
光をパターン状に照射したのち、現像して任意のパター
ンを形成する方法が一般に用いられてきた。しかし、こ
れらレジストや樹脂のパターンは、半導体素子の高密度
化や印刷物の高品質化のため、ますます微細化が要望さ
れている。BACKGROUND ART Conventionally, in semiconductor element manufacturing and printing plate manufacturing, methods for manufacturing resist patterns and resin patterns that serve as original plates have involved forming a resin film on a substrate that is polymerized or decomposed by light irradiation.
A commonly used method is to irradiate light in a pattern and then develop it to form an arbitrary pattern. However, these resist and resin patterns are required to be made smaller and finer in order to increase the density of semiconductor elements and improve the quality of printed materials.
特にＶＬＳＩの製造においては、サブミクロンのレジス
トパターンを精度良く作成する必要が生じてきた。Particularly in the production of VLSI, it has become necessary to create submicron resist patterns with high precision.
発明が解決しようとする問題点
このような場合、レジスト樹脂そのものの物性にも大き
く作用されるが、一般に微細なパターンを望むほど、す
なわち解像度をあげるためには、レジスト塗布厚を薄く
する必要があった。一方、サブミクロンパターンともな
ると湿式エツチングは利用できず、イオンエツチングや
プラズマエツチングやスパッタエツチング等のドライエ
ツチングを用いなければならないが、レジストパターン
Ω耐ドライエツチング性を向上させるためには、レジス
ト材料にもよるが、一般にレジスト塗膜を厚くしておく
必要があった。Problems to be Solved by the Invention In such cases, the physical properties of the resist resin itself have a large effect, but generally speaking, the finer a pattern is desired, that is, in order to increase the resolution, the thinner the resist coating is required. there were. On the other hand, when it comes to submicron patterns, wet etching cannot be used and dry etching such as ion etching, plasma etching, or sputter etching must be used. Although it depends, in general it was necessary to make the resist coating film thick.
したがって、上記２つの要求を満足させるためには、塗
膜が厚くても解像度が良いもの、あるいは、塗膜が薄く
ても耐ドライエツチング性が良いホトレジストを開発す
ればよいのであるが、今のところそのような材料は得ら
れていない。Therefore, in order to satisfy the above two requirements, it would be sufficient to develop a photoresist with good resolution even with a thick coating film, or a photoresist with good dry etching resistance even with a thin coating film. However, such materials have not yet been obtained.
本発明は、従来の欠点を解消し、高解像度、耐エツチン
グ性のすぐれた樹脂パターンを形成する方法を提供する
ことを目的とするものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a resin pattern with high resolution and excellent etching resistance by eliminating the conventional drawbacks.
問題点を解決するための手段
本発明のパターン形成方法は、任意の基板上にエネルギ
ー線により化学反応を生じる感応基を含んだ感応性薄膜
を形成し、この感応性薄膜にエネルギー線をパターン照
射して感応基をパターン状に親水性基または疎水性基化
させたのち、親水性基化された部分あるいは疎水性基化
されなかった部分に選択的にシリコンを含む化学物質を
化学吸着させ、さらに、酸素を含むガス中にてドライエ
ツチングを行うことによりパターンを形成するものであ
る。さらに、前記化学物質として少くとも一端に塩素を
結合した直鎖状シロキサン分子を用いたものである。Means for Solving the Problems The pattern forming method of the present invention involves forming a sensitive thin film containing a sensitive group that causes a chemical reaction with energy rays on an arbitrary substrate, and irradiating this sensitive thin film with energy rays in a pattern. After converting the sensitive groups into hydrophilic or hydrophobic groups in a pattern, chemical substances containing silicon are selectively adsorbed onto the hydrophilic or non-hydrophobic areas, Furthermore, a pattern is formed by dry etching in a gas containing oxygen. Furthermore, a linear siloxane molecule with chlorine bonded to at least one end is used as the chemical substance.
また、結合反応後、残存したシロキサン分子の一端の塩
素を水酸基に置換する工程と、前記水酸基にさらに両端
に塩素を結合した直鎖状シロキサン分子を結合反応させ
る工程を少なくとも１回以上行なうものである。Further, after the bonding reaction, a step of replacing chlorine at one end of the remaining siloxane molecule with a hydroxyl group, and a step of subjecting the hydroxyl group to a bonding reaction of a linear siloxane molecule with chlorine bonded to both ends are performed at least once. be.
また、任意の基板上へ有機薄膜を介して感応性薄膜を形
成しておき、選択的にシロキサン分子を結合させたのち
、酸素プラズマで処理することによシ、シロキサン分子
によるパターンを有機薄膜に転写するものである。In addition, by forming a sensitive thin film on an arbitrary substrate via an organic thin film, selectively bonding siloxane molecules, and then treating it with oxygen plasma, a pattern of siloxane molecules can be formed on the organic thin film. It is something to be transcribed.
作 用
本発明はこのような構成であシ、超微細パターンの形成
が可能となる。Function The present invention has such a configuration, and it becomes possible to form ultra-fine patterns.
実施例
本発明の実施例を第１図および第２図に基づいて説明す
る。Embodiment An embodiment of the present invention will be explained based on FIGS. 1 and 2.
第１図は第１の実施例を示す。同図ａにおいて、Ｓ １
０２の形成されたＳｔ基板１の上に光等のエネルギー線
照射により親水性基を生成するエネルギー感応性薄膜２
、例えば、シプレー社ノボラック系ポジレジストＡＺ１
４００．ＡＺ２４００ ポリ７オルミルオキシスチレ
ン、ポリクロロメチルスチレン、ポリーｔブトキシカル
ボニルオキシスチレン・オニウム塩、ポリーｔブチルメ
タアクリレート・オニウム塩等の薄膜を塗布形成し、第
２図すに示すようにエネルギー線でパターン露光する。FIG. 1 shows a first embodiment. In the same figure a, S 1
An energy-sensitive thin film 2 that generates hydrophilic groups by irradiating energy rays such as light on the St substrate 1 on which 02 is formed.
For example, Shipley Novolac positive resist AZ1
400. AZ2400 A thin film of poly 7-olumyloxystyrene, polychloromethylstyrene, poly t-butoxycarbonyloxystyrene onium salt, poly t-butyl methacrylate onium salt, etc. is applied and formed, and then exposed to energy rays as shown in Figure 2. Exposing the pattern.
するとエネルギー感応性薄膜の露光された部分４は、第
１図Ｃに示すように平面に一〇Ｈ基等の親水性基６を生
じる。例えばエネルギー感応性薄膜としてＡＺ１４００
を用い紫外線露光を行った場合、内部に含まれるナフト
キノンジアジド誘導体は、式（１）に示すような反応を
生じ親水性を生じる。Then, the exposed portion 4 of the energy-sensitive thin film produces hydrophilic groups 6 such as 10H groups on the plane as shown in FIG. 1C. For example, AZ1400 as an energy sensitive thin film.
When exposed to ultraviolet light, the naphthoquinonediazide derivative contained inside undergoes a reaction as shown in formula (1) and becomes hydrophilic.
あるいはポリフォルミルオキシスチレンを用いた場合に
は、式（噂に示すような反応を生じ選択的に親水性化さ
れる。Alternatively, when polyformyloxystyrene is used, a reaction as shown in the formula (rumored) occurs and it becomes selectively hydrophilic.
次に、シロキサン化合物、たとえば ＣＩ Ｍ ｅ Ｒ。Next, a siloxane compound, e.g. CI M R.
（ｎは整数Ｒ１〜Ｒ６はアルキル基等）等の少くとも一
端に塩素を結合した直鎖状シロキサン（以下、シロキサ
ン分子という）を含む非水系溶媒に浸漬し、化学吸着反
応によりエネルギー感応性薄膜の露光された部分４に選
択的にシロキサン分子の単分子膜６を形成する第１図ｄ
０たとえば、２．０Ｘ１０− ないしｒｓ、０ｘ１０−
Ｍｏｌ／ｌ（Ｄ濃度でシロキサン分子を溶かした８０
％ｎ−ヘキサン、１２チ四塩化炭素、８チクロロホルム
溶液中に一定時間浸漬し、露光された部分４の表面で一
８ｔ−〇−の結合７を形成する。(n is an integer R1 to R6 are alkyl groups, etc.), etc., and is immersed in a non-aqueous solvent containing a linear siloxane (hereinafter referred to as siloxane molecule) with chlorine bonded to at least one end, and is formed into an energy-sensitive thin film by chemisorption reaction. FIG. 1d shows that a monomolecular film 6 of siloxane molecules is selectively formed on the exposed portion 4 of the
0 For example, 2.0X10- to rs, 0x10-
Mol/l (D concentration of siloxane molecules dissolved at 80
%n-hexane, 12% carbon tetrachloride, 8% n-hexane, 8% dichloroform solution to form 18t-0- bonds 7 on the surface of the exposed portion 4.
暑
すなわち、第１図ｅに示する如＜ｓｉを含む単分子膜が
露光された部分４にのみ選択的に形成される。In other words, as shown in FIG. 1e, a monomolecular film containing <si is selectively formed only on the exposed portion 4.
最後に、ｏ２を含むプラズマ雰囲気（ＲＩＥ。Finally, a plasma atmosphere containing O2 (RIE).
ＥＣＲでも良い）中で処理することによりＳｌを含む単
分子膜の形成された部分は、０２プラズマにより５ｉ０
２が形成され、エツチングが進行せず、一方単分子膜の
形成されていない部分はＣｏ２やＨ２Ｏが生成されて薄
膜が除去されて、超微細のレジストパターン１ｏが形成
できる。The part where the monomolecular film containing Sl was formed by processing in ECR (ECR may also be used) is treated with 5i0 by 02 plasma.
2 is formed, and etching does not proceed.On the other hand, Co2 and H2O are generated in the portion where the monomolecular film is not formed, and the thin film is removed, so that an ultrafine resist pattern 1o can be formed.
なお、上記実施例では、エネルギー線によシ親水性基を
生じる薄膜を用いた場合を示したが、反対に疎水性基を
生じる薄膜を用いても同様の反応を生じさせることが可
能であり、この場合には、当然、露光された部分の薄膜
が除却されることになシいわゆるポジ形パターンが形成
される。In addition, in the above example, a case was shown in which a thin film that generates hydrophilic groups due to energy rays was used, but it is also possible to cause a similar reaction by using a thin film that generates hydrophobic groups on the contrary. In this case, of course, the exposed portion of the thin film is not removed and a so-called positive pattern is formed.
第２の実施例は、第１の実施例に示した方法を有機薄膜
を形成した基板上で行ない、第１の実施例で形成したパ
ターンを有機薄膜に転写するものである。In the second embodiment, the method shown in the first embodiment is performed on a substrate on which an organic thin film is formed, and the pattern formed in the first embodiment is transferred to the organic thin film.
第２図にその実施例を示す。同図ａに示すように基板１
の上に有機薄膜たとえばゴム系のレジスト１１を塗布し
、さらに第１実施例と同じ方法を用いて、レジスト１１
表面にエネルギー感応性薄膜２を塗布する。つぎに第１
実施例と同様の露光工程を行ない、第２図すに示すよう
にＳＬを含んだシロキサン分子でカバーされたパターン
１ｏを形成したのち、第２図Ｃに示すようにシロキサン
分子でカバーされたパターンをマスクに０２プラズマ処
理することによりレジスト１１を選択的にエツチングし
て、パターン１２をゴム系のレジストに転写することが
できる。この場合有機薄膜としてゴム系のレジストを用
いだが、ｏ２プラズマでエツチングされる物質であれば
なんでもよい。An example of this is shown in FIG. As shown in figure a, the substrate 1
An organic thin film such as a rubber resist 11 is applied thereon, and the resist 11 is further coated using the same method as in the first embodiment.
An energy sensitive thin film 2 is applied to the surface. Next, the first
The same exposure process as in the example was carried out to form a pattern 1o covered with siloxane molecules containing SL as shown in FIG. 2C, and then a pattern covered with siloxane molecules as shown in FIG. 2C. The resist 11 can be selectively etched by performing 02 plasma processing using the mask as a mask, and the pattern 12 can be transferred to a rubber-based resist. In this case, a rubber-based resist is used as the organic thin film, but any material that can be etched with O2 plasma may be used.
なお、以上の実施例では−８Ｉ Ｃ１３と一〇Ｈの界面
反応を例に示したが、同様な反応機構を示す物質であれ
ば、これらに限定されるものではない。従って、本発明
の方法は、超微細パターン形成、特にＶＬＳＩＭ造等に
おけるホトリン工程の改良に効果大なるものである。In addition, although the interfacial reaction between -8I C13 and 10H was exemplified in the above examples, the present invention is not limited to these as long as the substance exhibits a similar reaction mechanism. Therefore, the method of the present invention is highly effective in forming ultra-fine patterns, particularly in improving the photorin process in VLSIM fabrication and the like.
発明の効果
本発明によれば、パターン形成時のエネルギー線感応性
薄膜は極めて薄く形成しておくことができ超微細パター
ンの形成が可能である。すなわちＳＬ を含むパターン
１ｏは、ｏ２プラズマに対し、Ｓ １０２が形成される
ので十分耐エツチング性を確保でき、エネルギー感応性
薄膜２を極めて薄くできる為に、サブミクロン程度の超
微細なパターン形成に大きなメリットがある。一方、有
機薄膜にドライエッチでパターンを転写すれば、レジス
トの厚さは十分厚くしておくことができるので、一般に
ＶＬＳＩ製造工程に用いられるドライエツチング（たと
えば、イオンエツチングやスパッタエツチング）に対し
ても十分な耐エツチング性のある超微細なレジストパタ
ーンとして利用できる。Effects of the Invention According to the present invention, the energy ray-sensitive thin film can be formed extremely thin during pattern formation, making it possible to form ultra-fine patterns. In other words, the pattern 1o containing SL can ensure sufficient etching resistance against O2 plasma because S102 is formed, and the energy-sensitive thin film 2 can be made extremely thin, making it suitable for forming ultra-fine patterns on the order of submicrons. There are big benefits. On the other hand, if a pattern is transferred to an organic thin film by dry etching, the resist thickness can be made sufficiently thick, making it suitable for dry etching (for example, ion etching or sputter etching) commonly used in VLSI manufacturing processes. It can also be used as an ultra-fine resist pattern with sufficient etching resistance.
第１図は本発明の第１実施例のパターン形成方法を示す
工程断面図、第２図は本発明の第２実施例のパターン形
成方法を示す工程断面図である。
１・・・・・・基板、２・・・・・・エネルギー感応性
薄膜、３・・・・・・エネルギー線、４・・・・・・照
射部分、６・・・・・・親水性基、６・・・・・・シロ
キサン単分子膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名２−
゛−工十ルキ゛−Ｉυ’Ｅ４を痺陳５−゛信と役纂
第１図
６−−−シｐキ寸ン草分）に（
第２図FIG. 1 is a process cross-sectional view showing a pattern forming method according to a first embodiment of the present invention, and FIG. 2 is a process cross-sectional view showing a pattern forming method according to a second example of the present invention. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Energy sensitive thin film, 3...Energy rays, 4...Irradiated portion, 6...Hydrophilicity Group, 6... Siloxane monolayer. Name of agent: Patent attorney Toshio Nakao and 1 other person2-
(Fig. 2)
Claims (3)
じる感応基を含んだ感応性薄膜を形成し、前記感応性薄
膜にエネルギー線をパターン照射して感応基をパターン
状に反応せしめ、選択的に親水性または疎水性基化した
のち、前記親水性基化された部分または疎水性基化され
ていない部分に選択的にシリコンを含む化学物質を化学
吸着させ、さらにドライエッチング処理を行うことによ
り薄膜パターンを形成するようにしたパターン形成方法
。(1) A sensitive thin film containing a sensitive group that causes a chemical reaction with energy rays is formed on an arbitrary substrate, and the sensitive thin film is irradiated with energy rays in a pattern to cause the sensitive groups to react in a pattern. After making it hydrophilic or hydrophobic, chemical substances containing silicon are selectively adsorbed on the hydrophilic or non-hydrophobic parts, and then dry etching is performed. A pattern forming method for forming a thin film pattern.
鎖状シロキサン分子を用いた特許請求の範囲第１項記載
のパターン形成方法。(2) The pattern forming method according to claim 1, wherein a linear siloxane molecule having a chlorine bond at least at one end is used as the chemical substance.
たはポリフォルミルオキシスチレン、クロロメチルスチ
レン等である特許請求の範囲第１項または第２項記載の
パターン形成方法。(3) The pattern forming method according to claim 1 or 2, wherein the sensitive thin film is a novolak positive resist, polyformyloxystyrene, chloromethylstyrene, or the like.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340186A JPS6396655A (en) | 1986-10-14 | 1986-10-14 | Pattern forming method |
| EP87305129A EP0249457B1 (en) | 1986-06-12 | 1987-06-10 | Method for formation of patterns |
| DE8787305129T DE3772267D1 (en) | 1986-06-12 | 1987-06-10 | IMAGE GENERATION PROCESS. |
| US07/341,257 US4945028A (en) | 1986-06-12 | 1989-04-20 | Method for formation of patterns using high energy beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24340186A JPS6396655A (en) | 1986-10-14 | 1986-10-14 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396655A true JPS6396655A (en) | 1988-04-27 |
Family
ID=17103313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24340186A Withdrawn JPS6396655A (en) | 1986-06-12 | 1986-10-14 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396655A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154062A (en) * | 1989-11-13 | 1991-07-02 | Fujitsu Ltd | How to form a resist pattern |
| JPH04149441A (en) * | 1990-10-12 | 1992-05-22 | Mitsubishi Electric Corp | Formation of pattern |
| US5484749A (en) * | 1990-08-10 | 1996-01-16 | Alcan-Tech Co., Inc. | Manufacturing method of semiconductor device |
| KR20010085420A (en) * | 2000-02-23 | 2001-09-07 | 기타지마 요시토시 | Electroluminescence element and method manufacturing the same |
| JP2003114525A (en) * | 2001-08-03 | 2003-04-18 | Fuji Photo Film Co Ltd | Conductive pattern material and method for forming conductive pattern |
| CN115047729A (en) * | 2022-07-11 | 2022-09-13 | 上海传芯半导体有限公司 | EUV lithography apparatus and EUV lithography method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642229A (en) * | 1979-06-25 | 1981-04-20 | University Patents Inc | New photooresist composition |
| JPS58112078A (en) * | 1981-12-26 | 1983-07-04 | Daikin Ind Ltd | Method for forming a fluoroalkyl acrylate polymer film on a substrate surface |
| JPS6194041A (en) * | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPS6194042A (en) * | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Molecular construction and its manufacture |
| JPS61180437A (en) * | 1985-02-05 | 1986-08-13 | Matsushita Electric Ind Co Ltd | Formation of pattern |
-
1986
- 1986-10-14 JP JP24340186A patent/JPS6396655A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5642229A (en) * | 1979-06-25 | 1981-04-20 | University Patents Inc | New photooresist composition |
| JPS58112078A (en) * | 1981-12-26 | 1983-07-04 | Daikin Ind Ltd | Method for forming a fluoroalkyl acrylate polymer film on a substrate surface |
| JPS6194041A (en) * | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Pattern forming method |
| JPS6194042A (en) * | 1984-10-16 | 1986-05-12 | Matsushita Electric Ind Co Ltd | Molecular construction and its manufacture |
| JPS61180437A (en) * | 1985-02-05 | 1986-08-13 | Matsushita Electric Ind Co Ltd | Formation of pattern |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03154062A (en) * | 1989-11-13 | 1991-07-02 | Fujitsu Ltd | How to form a resist pattern |
| US5484749A (en) * | 1990-08-10 | 1996-01-16 | Alcan-Tech Co., Inc. | Manufacturing method of semiconductor device |
| JPH04149441A (en) * | 1990-10-12 | 1992-05-22 | Mitsubishi Electric Corp | Formation of pattern |
| KR20010085420A (en) * | 2000-02-23 | 2001-09-07 | 기타지마 요시토시 | Electroluminescence element and method manufacturing the same |
| JP2003114525A (en) * | 2001-08-03 | 2003-04-18 | Fuji Photo Film Co Ltd | Conductive pattern material and method for forming conductive pattern |
| CN115047729A (en) * | 2022-07-11 | 2022-09-13 | 上海传芯半导体有限公司 | EUV lithography apparatus and EUV lithography method |
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