JPS6394624A - Method for controlling deflection of charged beam - Google Patents

Abstract

PURPOSE:To accelerate the writing speed by a method wherein subdeflection correcting processing is started simultaneously with main deflection correcting processing while the processed results of subdeflection correction are stored in a memory to be rapidly read out during the subdeflection of charged beams. CONSTITUTION:A main deflection correcting processor 1 processes main data and simultaneously after finishing the processing, a main deflector 3 starts main deflection settling while after finishing the settling, subdeflection settling is started. A subdeflection correcting processing controller 2 starts a subdeflection correcting processor 4 collecting sub data to be processed and the results thereof are stored in a FIFO 5 for a timing C. The processed results stored in the FIFO 5 are started to be settled by a subdeflector 6 for another timing and simultaneously after finishing the settling, a blanking amplifier 7 is actuated to irradiate a specimen base 10 with electron beams 8.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a deflection control method for an electron beam exposure apparatus.

(Prior art) In the conventional charged beam deflection control method, the sub-deflection correction calculation is performed immediately before the charged beam is deflected by the sub-deflection, and the sub-deflection correction calculation speed affects the writing speed of the electron beam lithography system. .

(Problems to be Solved by the Invention) The present invention has been devised in view of the above-mentioned shortcomings of the prior art. 4. Therefore, the sub-deflection correction calculation is performed in advance, the result is stored in the memory, and the memory is read out during drawing and the sub-deflection is performed.
An object of the present invention is to provide a charged beam deflection control method that improves writing speed.

[Structure of the invention]

(Means for Solving the Problems) The present invention starts the sub-deflection correction calculation at the same time as the main deflection correction calculation, stores the sub-deflection correction calculation result in a memory,
Load 11! This is a charged beam deflection control method that can read out the contents of a memory at high speed during beam sub-deflection, correct the charged beam, and improve the writing speed of an electron beam exposure apparatus.

(Function) The main deflection correction calculation time and the main deflection settling time are the times during which the electron beam exposure device does not write. This time is used for calculating the sub-deflection correction, thereby shortening the time for calculating the sub-deflection correction.

(Embodiment) FIG. 1 shows the configuration of charged beam deflection control, and FIG. 2 shows a timing chart of charged beam deflection control.

The main deflection correction calculation control 1 and the sub-deflection correction calculation control 2 are operated by the S'r A RT signal. Main deflection correction calculation 1 receives MAIN DATA, calculates it, and outputs a signal at timing B at the same time as the completion of the calculation. Main deflector 3 receives the signal at timing B, starts main deflection settling, and adjusts the main deflection. The sub-deflection setting starts from the end of the setting.

On the other hand, the sub-deflection correction calculation control 2 operated by the 5TART signal starts the sub-deflection correction calculation 4.
takes in SUB DATA, performs calculations, and stores the calculation results in FIFO 5 for a period of timing C. F
The calculation result stored in IFO5 is sub-deflected v at timing D.
Start setting r6. The beginning of timing D is equal to the end timing of the main deflection setting.

At the same time as the settling of the first sub-deflector 6 is completed, the blanking 7 is activated during the shot time (E), and the electron beam 8 is irradiated onto the sample stage 10 through the 7-percha 9.

The settling time and shot time (
Repeat E).

〔Effect of the invention〕

According to the present invention, the sub-deflection correction calculation is performed in advance, the result is stored in the FIFO, and the FIFO is read out during drawing, and the sub-deflection is performed to improve the drawing speed.

[Brief explanation of the drawing]

Figure 1 is a block diagram showing the configuration of charged beam deflection control;
FIG. 2 is a timing chart of charged beam deflection control. 1...Main deflection correction calculation 2...Sub deflection correction calculation control 3...Main deflector 4...Sub deflection correction calculation 5-F I F O (FIR3T IN FIR5T
0UT) 6...Sub-deflector 7...Blanking amplifier 8...Electron beam 9...Aperture 10...Specimen stage agent Patent attorney Noriyuki Noriyuki Yudo Takehana Kikuo Utsukoken

Claims (1)

[Claims] A main deflection means that largely deflects the charged beam, a sub-deflection means that deflects the charged beam to a small degree with the position determined by the main deflection means as the origin, a main deflection correction calculation means that corrects the distortion of the main deflection, and a distortion of the sub-deflection. In a charged beam deflection control having a sub-deflection correction means for performing a correction calculation, the calculation of the sub-deflection correction calculation means is started at the same time as the execution of the main deflection correction calculation means, and a memory for storing the calculation results of the sub-deflection correction calculation means. 1. A charged beam deflection control method comprising: reading the contents of the storage means at high speed during sub-deflection of the charged beam; and correcting the charged beam.