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JPS6364041U - - Google Patents

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Publication number
JPS6364041U
JPS6364041U JP15892886U JP15892886U JPS6364041U JP S6364041 U JPS6364041 U JP S6364041U JP 15892886 U JP15892886 U JP 15892886U JP 15892886 U JP15892886 U JP 15892886U JP S6364041 U JPS6364041 U JP S6364041U
Authority
JP
Japan
Prior art keywords
diffusion layer
conductivity type
layer region
conductive wiring
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15892886U
Other languages
Japanese (ja)
Other versions
JP2526536Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986158928U priority Critical patent/JP2526536Y2/en
Publication of JPS6364041U publication Critical patent/JPS6364041U/ja
Application granted granted Critical
Publication of JP2526536Y2 publication Critical patent/JP2526536Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a,bは本考案の一実施例で、第1図b
は平面図、第1図aは第1図b中―′におけ
る断面図をそれぞれ示し、第2図は従来例を示す
。 11,12……シリコン基板、12,22……
絶縁膜、13,23……配線層、14……不純物
拡散層、C……寄生容量を示す。
Figures 1a and b show an embodiment of the present invention; Figure 1b
1A shows a plan view, FIG. 1A shows a sectional view taken along the line -' in FIG. 1B, and FIG. 2 shows a conventional example. 11, 12... Silicon substrate, 12, 22...
Insulating film, 13, 23... wiring layer, 14... impurity diffusion layer, C... parasitic capacitance.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一導電型半導体基板一表面上に絶縁膜を介して
導電性配線が形成された半導体装置において、該
導電性配線下の前記半導体基板表面に他導電型の
不純物拡散層領域を有し、該不純物拡散層領域は
電位的に浮遊接点であることを特徴とする半導体
装置。
In a semiconductor device in which a conductive wiring is formed on one surface of a semiconductor substrate of one conductivity type via an insulating film, an impurity diffusion layer region of another conductivity type is provided on the surface of the semiconductor substrate under the conductive wiring, and the impurity A semiconductor device characterized in that a diffusion layer region is a floating contact in terms of potential.
JP1986158928U 1986-10-16 1986-10-16 Semiconductor device Expired - Lifetime JP2526536Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986158928U JP2526536Y2 (en) 1986-10-16 1986-10-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986158928U JP2526536Y2 (en) 1986-10-16 1986-10-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6364041U true JPS6364041U (en) 1988-04-27
JP2526536Y2 JP2526536Y2 (en) 1997-02-19

Family

ID=31082880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986158928U Expired - Lifetime JP2526536Y2 (en) 1986-10-16 1986-10-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2526536Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021975A (en) * 1988-06-10 1990-01-08 Nec Corp Master slice type semiconductor device
JP2015152457A (en) * 2014-02-14 2015-08-24 オムロン株式会社 Capacitive pressure sensor and input device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141977A (en) * 1974-10-07 1976-04-08 Suwa Seikosha Kk HANDOTA ISOCHI
JPS6112056A (en) * 1984-06-27 1986-01-20 Toshiba Corp Semiconductor device
JPS62287643A (en) * 1986-06-06 1987-12-14 Fujitsu Ltd semiconductor equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141977A (en) * 1974-10-07 1976-04-08 Suwa Seikosha Kk HANDOTA ISOCHI
JPS6112056A (en) * 1984-06-27 1986-01-20 Toshiba Corp Semiconductor device
JPS62287643A (en) * 1986-06-06 1987-12-14 Fujitsu Ltd semiconductor equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021975A (en) * 1988-06-10 1990-01-08 Nec Corp Master slice type semiconductor device
JP2015152457A (en) * 2014-02-14 2015-08-24 オムロン株式会社 Capacitive pressure sensor and input device

Also Published As

Publication number Publication date
JP2526536Y2 (en) 1997-02-19

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