JPS6364041U - - Google Patents
Info
- Publication number
- JPS6364041U JPS6364041U JP15892886U JP15892886U JPS6364041U JP S6364041 U JPS6364041 U JP S6364041U JP 15892886 U JP15892886 U JP 15892886U JP 15892886 U JP15892886 U JP 15892886U JP S6364041 U JPS6364041 U JP S6364041U
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- conductivity type
- layer region
- conductive wiring
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第1図a,bは本考案の一実施例で、第1図b
は平面図、第1図aは第1図b中―′におけ
る断面図をそれぞれ示し、第2図は従来例を示す
。
11,12……シリコン基板、12,22……
絶縁膜、13,23……配線層、14……不純物
拡散層、C……寄生容量を示す。
Figures 1a and b show an embodiment of the present invention; Figure 1b
1A shows a plan view, FIG. 1A shows a sectional view taken along the line -' in FIG. 1B, and FIG. 2 shows a conventional example. 11, 12... Silicon substrate, 12, 22...
Insulating film, 13, 23... wiring layer, 14... impurity diffusion layer, C... parasitic capacitance.
Claims (1)
導電性配線が形成された半導体装置において、該
導電性配線下の前記半導体基板表面に他導電型の
不純物拡散層領域を有し、該不純物拡散層領域は
電位的に浮遊接点であることを特徴とする半導体
装置。 In a semiconductor device in which a conductive wiring is formed on one surface of a semiconductor substrate of one conductivity type via an insulating film, an impurity diffusion layer region of another conductivity type is provided on the surface of the semiconductor substrate under the conductive wiring, and the impurity A semiconductor device characterized in that a diffusion layer region is a floating contact in terms of potential.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986158928U JP2526536Y2 (en) | 1986-10-16 | 1986-10-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986158928U JP2526536Y2 (en) | 1986-10-16 | 1986-10-16 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6364041U true JPS6364041U (en) | 1988-04-27 |
JP2526536Y2 JP2526536Y2 (en) | 1997-02-19 |
Family
ID=31082880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986158928U Expired - Lifetime JP2526536Y2 (en) | 1986-10-16 | 1986-10-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2526536Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH021975A (en) * | 1988-06-10 | 1990-01-08 | Nec Corp | Master slice type semiconductor device |
JP2015152457A (en) * | 2014-02-14 | 2015-08-24 | オムロン株式会社 | Capacitive pressure sensor and input device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5141977A (en) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | HANDOTA ISOCHI |
JPS6112056A (en) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | Semiconductor device |
JPS62287643A (en) * | 1986-06-06 | 1987-12-14 | Fujitsu Ltd | semiconductor equipment |
-
1986
- 1986-10-16 JP JP1986158928U patent/JP2526536Y2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5141977A (en) * | 1974-10-07 | 1976-04-08 | Suwa Seikosha Kk | HANDOTA ISOCHI |
JPS6112056A (en) * | 1984-06-27 | 1986-01-20 | Toshiba Corp | Semiconductor device |
JPS62287643A (en) * | 1986-06-06 | 1987-12-14 | Fujitsu Ltd | semiconductor equipment |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH021975A (en) * | 1988-06-10 | 1990-01-08 | Nec Corp | Master slice type semiconductor device |
JP2015152457A (en) * | 2014-02-14 | 2015-08-24 | オムロン株式会社 | Capacitive pressure sensor and input device |
Also Published As
Publication number | Publication date |
---|---|
JP2526536Y2 (en) | 1997-02-19 |