JPS6362870A - Device for producing thin organic film - Google Patents
Device for producing thin organic filmInfo
- Publication number
- JPS6362870A JPS6362870A JP20723886A JP20723886A JPS6362870A JP S6362870 A JPS6362870 A JP S6362870A JP 20723886 A JP20723886 A JP 20723886A JP 20723886 A JP20723886 A JP 20723886A JP S6362870 A JPS6362870 A JP S6362870A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ionization
- mass selection
- target
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 abstract description 10
- 230000008021 deposition Effects 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 abstract description 3
- 229910052724 xenon Inorganic materials 0.000 abstract description 3
- -1 xenon ion Chemical class 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000047703 Nonion Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/05—Organic bonding materials; Methods for coating a substrate with a photoconductive layer; Inert supplements for use in photoconductive layers
- G03G5/0525—Coating methods
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は有機化合物の薄膜製造装置に関する。[Detailed description of the invention] Industrial applications The present invention relates to an apparatus for producing thin films of organic compounds.
従来の技術
有機化合物の薄膜は電子写真感光体やフィルムコンデン
サ、レジスト材料、光デイスク用メモリ材料等エレクト
ロニクスの分野で広く使われている。有機化合物の薄膜
の基板上への形成法は湿式法としてディップ、スピンコ
ード、印刷、ラングミュア−ブロジェット法等、乾式法
として熱蒸着、分子線エピタキシ、イオンブレーテイン
ク、イオゝノケラズ々Ｆ−ム究着、スパーンタリンケ等
が知られているが膜の均一性および生産性の点からいえ
ば乾式の薄膜形成法が優れている。2. Description of the Related Art Thin films of organic compounds are widely used in the field of electronics, such as electrophotographic photoreceptors, film capacitors, resist materials, and memory materials for optical disks. Methods for forming a thin film of an organic compound on a substrate include wet methods such as dipping, spin code, printing, Langmuir-Blodgett method, etc., and dry methods such as thermal evaporation, molecular beam epitaxy, ion-breathing ink, Ionokeraz, etc. Dry thin film forming methods are known, but dry thin film forming methods are better in terms of film uniformity and productivity.
第３図は従来の熱蒸着薄膜製造装置の垂直断面図である
。以下第３図にそって説明する。１は真空槽であってそ
の底部に排気口２を有する。真空槽１内下部に凹部なも
つ蒸発源３があり、この蒸発源３は図示しない適当な支
持手段で真空槽１の器壁に支持されている。蒸発源３は
それ自体でヒータとなっており真空槽１外にとりだした
ヒータ電源４をもちいて希望の温度に加熱できる。この
蒸発源３に対向する位置には試料台５が真空槽１に適当
な支持手段で支持されている。FIG. 3 is a vertical sectional view of a conventional thermal evaporation thin film manufacturing apparatus. This will be explained below with reference to FIG. Reference numeral 1 denotes a vacuum chamber, which has an exhaust port 2 at its bottom. There is an evaporation source 3 having a recess in the lower part of the vacuum chamber 1, and this evaporation source 3 is supported on the wall of the vacuum chamber 1 by suitable support means (not shown). The evaporation source 3 itself serves as a heater, and can be heated to a desired temperature using a heater power source 4 taken out from the vacuum chamber 1. At a position facing the evaporation source 3, a sample stage 5 is supported in the vacuum chamber 1 by suitable support means.
このような装置においては、蒸発源３上に蒸着しようと
する有機物をのせたのち排気系６によって真空槽１内を
高真空状態にし、そののち蒸発源３を加熱することによ
って目的の有機物を気化せしめ試料台５上に設置した基
板７上に堆積させる。In such an apparatus, after the organic substance to be evaporated is placed on the evaporation source 3, the inside of the vacuum chamber 1 is brought into a high vacuum state by the exhaust system 6, and then the target organic substance is vaporized by heating the evaporation source 3. The sample is deposited on a substrate 7 placed on a sample stage 5.
なお基板７はヒータ電源８によって加熱できる。Note that the substrate 7 can be heated by a heater power source 8.
発明が解決しようとする問題点
しかしながら、このような構造の装置においては蒸発し
た有機物が全て基板上に堆積するため蒸発源に含まれる
不純物および蒸発後の分解物や反応物がすべて堆積物に
入ってしまい膜の結晶性が悪くなるという問題点があっ
た。Problems to be Solved by the Invention However, in an apparatus with such a structure, all of the evaporated organic matter is deposited on the substrate, so all the impurities contained in the evaporation source and the decomposed products and reactants after evaporation enter the deposit. There was a problem in that the crystallinity of the film deteriorated.
問題点を解決するための手段
真空槽と、該真空槽内に配置したイオン化部と、該イオ
ン化部に連続して設けた質量選択部とを備え、該イオン
化部に対向して基板を配置するよう構成する。Means for Solving Problems: A vacuum chamber, an ionization section disposed within the vacuum chamber, and a mass selection section disposed in series with the ionization section, and a substrate is disposed opposite to the ionization section. Configure it like this.
作用
イオン化部に連続して質量選択部を設けることにより希
望するイオンの質量数以外のイオンは排除され、目的物
のみ基板に堆積できる。By providing a mass selection section in succession to the active ionization section, ions other than the desired ion mass number are excluded, allowing only the target ion to be deposited on the substrate.
実施例 以下図面を参照して本発明の詳細な説明する。Example The present invention will be described in detail below with reference to the drawings.
第１図は本発明のイオン化部に連続して質量選択部をも
つ有機薄膜製造装置の一実施例を示す水平断面図で、第
２図は第１図に示した有機薄ｎＱ形成ン化部１１、質量
選択部１２、堆積部１３の３つの部分に大別できる。イ
オン化部１１には原料を設置するターゲット１４が支持
部材１５を通してイオン化部１１内に固定されている。FIG. 1 is a horizontal sectional view showing an embodiment of an organic thin film manufacturing apparatus having a mass selection section continuous to the ionization section of the present invention, and FIG. 11, mass selection section 12, and deposition section 13. A target 14 on which a raw material is placed is fixed in the ionization section 11 through a support member 15 .
この支持部材１５は可動でありイオン化効率の最適位置
に設定できる。このターゲット１４はヒータ電源１６に
より外部から加熱できるようになっている。第２図に示
すようにこのターゲット１４をスパッタするためのキセ
ノンイオン銃１７がターゲット１４の上方の器壁に固定
されている。This support member 15 is movable and can be set at the optimum position for ionization efficiency. This target 14 can be heated from the outside by a heater power source 16. As shown in FIG. 2, a xenon ion gun 17 for sputtering the target 14 is fixed to the vessel wall above the target 14.
蒸発源ターゲット１４と質量選択部１２のあいだにはフ
ォーカススリット１８および出射スリット１９が図面に
は示さない適当な支持手段で器壁に固定されている。さ
らに生成したイオンを加速して質量選択部１２へ送るた
めにターゲット１４と出射スリット１８のあいだには３
．２ｋＶの電圧が印加されている。A focus slit 18 and an exit slit 19 are fixed to the vessel wall between the evaporation source target 14 and the mass selection section 12 by suitable support means not shown in the drawings. Furthermore, in order to accelerate the generated ions and send them to the mass selection section 12, three
．． A voltage of 2 kV is applied.
さらに質量選択部１２では均一な磁場を真空槽９外から
印加するために曲率半径２００ｍｍ 、 ６０”扇形磁
場をつくるための電磁石２０が設置されている。Further, in the mass selection section 12, an electromagnet 20 is installed to create a 60'' fan-shaped magnetic field with a radius of curvature of 200 mm in order to apply a uniform magnetic field from outside the vacuum chamber 9.
荷Ｚ、イオンの加速電圧Ｖ （Ｖ）および磁場の曲率半
［Ｒ（Ｃｍ）によりｍ／ｚ＝４．８２ｘｌＯ−５ｘ（Ｒ
２Ｂ２／Ｖ）の式を満足するよう決定すればよい、堆積
させる有機分子の分子量の最大ｆ！：１０００として磁
場は１５０００ガウスまで発生できるものにした。m/z=4.82xlO-5x(R
The maximum molecular weight f! of the organic molecules to be deposited should be determined to satisfy the formula (2B2/V). :1000, and a magnetic field of up to 15000 Gauss can be generated.
なお磁場の曲率半径、磁場の強さおよびイオンの加速電
圧値はここに示した値を特に指定しているわけではなく
、ｍ／ｚ＝４．８２ｘｌＯ−５ｘ（Ｒ２Ｂ２／Ｖ）の
式を満足するものであれば他の値であってもかまわない
。Note that the radius of curvature of the magnetic field, the strength of the magnetic field, and the ion acceleration voltage value are not specifically specified as shown here, and satisfy the formula m/z = 4.82xlO-5x (R2B2/V). Any other value may be used as long as it is used.
さらに種々の分子量の有機分子を堆積できるよう磁場制
御系２１を有している。この質量選択部１２の堆積部１
３側にはコレクタスリット２２が適当な支持手段で器壁
に固定されている。Furthermore, it has a magnetic field control system 21 so that organic molecules of various molecular weights can be deposited. Deposition section 1 of this mass selection section 12
On the third side, a collector slit 22 is fixed to the vessel wall by suitable support means.
堆積部１３には基板を設置するための試料台２３が器壁
に固定されている。In the deposition section 13, a sample stage 23 on which a substrate is placed is fixed to the chamber wall.
有機薄膜形成実験
以上述べた構成の有機薄膜形成装置で有機薄膜の形成実
験をおこなった。原料として銅フタロシアニン（東京化
成製）とグリセロール（関東化学製特級） ｆ：１：１
で混合したものをターゲットに塗布した。また試料台に
はシリコンウェハを固定した。つぎに排気系によって真
空槽内をｌＸｌ０−７ｔｏｒｒまでひいたのち、キセノ
ンガス圧１ｘｌＯ−４ｔｏｒｒ、加速電圧０．５ｋＶ
、イオン電流８ｍＡで銅フタロシアニンをスパッタして
シリコンウェハ上に０．１μｍ堆積させた。Organic Thin Film Formation Experiment An organic thin film formation experiment was conducted using the organic thin film forming apparatus configured as described above. Copper phthalocyanine (manufactured by Tokyo Kasei) and glycerol (special grade manufactured by Kanto Kagaku) f:1:1 as raw materials
The mixture was applied to the target. A silicon wafer was also fixed on the sample stage. Next, the inside of the vacuum chamber was pulled down to 1X10-7 torr by the exhaust system, and then the xenon gas pressure was 1x10-4 torr, and the acceleration voltage was 0.5kV.
, copper phthalocyanine was deposited to a thickness of 0.1 μm on a silicon wafer by sputtering with an ionic current of 8 mA.
比較例として第３図に示した蒸着装置をもちいて実施例
と同様に銅フタロシアニンとグリセロール′ｆ：１：１
で混合したものを蒸着源にのせたのち排気して１ｘｌＯ
−７ｔｏｒｒに到達したのを確認してから蒸着源を２０
０℃に加熱してシリコンウェハ上に０．１μｍ蒸着した
。As a comparative example, using the vapor deposition apparatus shown in FIG.
Place the mixture on the evaporation source and exhaust to 1xlO.
After confirming that -7 torr has been reached, turn off the evaporation source to 20
It was heated to 0° C. and deposited to a thickness of 0.1 μm on a silicon wafer.
これらの生成薄膜の構造をＸ線回折により調べたところ
実施例の薄膜では銅フタロシアニンα型でその（２００
）のピークの半値幅は０．１ｄｅｇ、たったのに対し比
較例ではその（２００）のピークの半値幅は０．２５ｄ
ｅｇ、であった、また銅フタロシアニン結晶以外の回折
ピークも観測された。The structure of these produced thin films was investigated by X-ray diffraction, and the thin film of the example was found to be copper phthalocyanine α type (200
) The half-width of the peak is only 0.1 deg, whereas in the comparative example, the half-width of the peak of (200) is 0.25 d.
eg, and diffraction peaks other than copper phthalocyanine crystals were also observed.
、真豫明の効果
本発明によれば膜内に不純物のほとんどない有機薄膜製
造装置を提供することができる。According to the present invention, it is possible to provide an organic thin film manufacturing apparatus in which there are almost no impurities in the film.
なお実施例ではスパッタリングによるイオン化をもちい
たが、これは加熱、電子ビーム、電界、光等周知のイオ
ン化法をもちいることができる。Although ionization by sputtering was used in the embodiment, any well-known ionization method such as heating, electron beam, electric field, or light may be used.
また質量選択部は磁場以外にも四重極をもちいることも
できる。In addition to the magnetic field, the mass selection section can also use a quadrupole.
第１図は本発明の一実旌例における有機薄膜製造装置の
水平断面図、第２図は第１図のｘ−ｘ’断面図、第３図
は従来の熱蒸着薄膜製造装置の断面図である。
９・・・真空槽、 １１・・・イオン化部、１２・・
・質量選択部、 ２３・・・＊科白。
代理人の氏名 弁理士 中尾敏男 はか１名９−真空槽
１０−ｍ−排気口
ｌｌ−−７−イオン化部
／Ｚ−−一質ｆ選沢部
！４− ターゲット
１７− キでノンイオン１克
１８− フォーかススリット
１９− 出々士スリット
？０−電磁石FIG. 1 is a horizontal cross-sectional view of an organic thin film manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line xx' in FIG. 1, and FIG. 3 is a cross-sectional view of a conventional thermal evaporation thin film manufacturing apparatus. It is. 9... Vacuum chamber, 11... Ionization section, 12...
・Mass selection section, 23...*Kagami White. Name of agent Patent attorney Toshio Nakao 1 person 9-Vacuum chamber 10-m-Exhaust port 11--7-Ionization department/Z--Issei f selection section! 4- Target 17- Ki and non-ion 1katsu 18- Four or Slit 19- Outer Slit? 0-electromagnet
Claims (1)
イオン化部に連続して設置された質量選択部とを備え、
前記イオン化部に対向して基板を配置するよう構成され
た有機薄膜製造装置。comprising a vacuum chamber, an ionization section disposed within the vacuum chamber, and a mass selection section disposed in succession to the ionization section,
An organic thin film manufacturing apparatus configured to place a substrate facing the ionization section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20723886A JPS6362870A (en) | 1986-09-03 | 1986-09-03 | Device for producing thin organic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20723886A JPS6362870A (en) | 1986-09-03 | 1986-09-03 | Device for producing thin organic film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6362870A true JPS6362870A (en) | 1988-03-19 |
Family
ID=16536507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20723886A Pending JPS6362870A (en) | 1986-09-03 | 1986-09-03 | Device for producing thin organic film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6362870A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5990602A (en) * | 1992-06-01 | 1999-11-23 | Nippondenso Co., Ltd. | Long life spark plug having minimum noble metal amount |
-
1986
- 1986-09-03 JP JP20723886A patent/JPS6362870A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5990602A (en) * | 1992-06-01 | 1999-11-23 | Nippondenso Co., Ltd. | Long life spark plug having minimum noble metal amount |
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