[go: up one dir, main page]

JPS6353694B2 - - Google Patents

Info

Publication number
JPS6353694B2
JPS6353694B2 JP56047170A JP4717081A JPS6353694B2 JP S6353694 B2 JPS6353694 B2 JP S6353694B2 JP 56047170 A JP56047170 A JP 56047170A JP 4717081 A JP4717081 A JP 4717081A JP S6353694 B2 JPS6353694 B2 JP S6353694B2
Authority
JP
Japan
Prior art keywords
wire
elements
strength
bonding
tensile strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56047170A
Other languages
Japanese (ja)
Other versions
JPS57164542A (en
Inventor
Hiroshi Yamamoto
Matsunosuke Kikuchi
Seiichi Iwata
Kanji Ootsuka
Kensuke Nakada
Michio Tanimoto
Satoru Matsubara
Yasuo Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Hitachi Ltd
Original Assignee
Tanaka Denshi Kogyo KK
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK, Hitachi Ltd filed Critical Tanaka Denshi Kogyo KK
Priority to JP56047170A priority Critical patent/JPS57164542A/en
Publication of JPS57164542A publication Critical patent/JPS57164542A/en
Publication of JPS6353694B2 publication Critical patent/JPS6353694B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To realize higher mechanical strength and improve anti-corrosion property by adding elements such as Cu, Mg or Mn to Al for wire material. CONSTITUTION:Al alloy which contains at least one element out of a group which consists of 0.5-3.0wt% of Mg, 1.0-3.0wt% of Mn and 0.5-3.5wt% of Cu is used as the material for bonding wire. In order to use as little Au wire as possible, invesigation was made by adding a little amount of some kinds of elements and it was found out that Al alloy which contained additive elements mentioned above could be the material for bonding wire which met the requirements that the junction strength was not less than 6gf, the tensile strength was not less than 30kgf/mm.<2> and the elongation was in the range of 1-2%. And Mg and Mn improve anti-corrosion property of Al.

Description

【発明の詳細な説明】[Detailed description of the invention]

半導体装置において、チツプと基板或いはリー
ドフレームとの接続にはワイヤボンデイングがも
つともよく使われている。そのとき、接続部の強
度や用いる線そのものの強度は半導体装置の信頼
性に大きな影響を与える。線の材料としては、
AuとAlが主で、Auの方が多い。なぜなら、Au
の方が接合が容易で、線そのものの機械的強度が
高く、耐食性も優れているからである。しかし、
最近、Auの値段が上昇しているため、Au線はな
るべく使わないようにしたい。本発明は、従来の
Al線にCu，Mg，Mnのような元素を添加し、そ
の機械的強度を高くして、ある場合には耐食性を
向上させたものをボンデイング用の線材に用いた
半導体装置に関する。 実施例 従来用いられてきたAl線は約1wt％のSiを含
み、引張強度が25Kgｔ／mm2程度のものである。こ
の線を用いて、高速自動超音波接合機でワイヤボ
ンデイングを行なうと、線にかかる力が従来の接
合機の場合より大きくなるため、接合中に断線す
る率が大きくなる。また、AlはAuに比べると引
張強度が低いので、振動、衝撃など外力を受けた
場合にも断線しやすい。更に、樹脂封止する場合
のように腐食性雰囲気に線がさらされる場合には
線の機械的強度ばかりでなく、耐食性も重要な因
子となる。 以上のことを考えに入れ、Alに少量の各種元
素を添加して、線の引張強度を変え、断線不良率
と接合力（線を上に引張り線或いは接合部で破断
するのに要する力）との関係を調べたら、断線不
良率を設定水準以下にするためには、接合力とし
て６ｇｆ以上必要であることが判つた。次に、接
合力と線の引張強度との間に第１図に示すような
結果を得た。従つて、この図から、引張強度30Kg
ｆ／mm2の線が必要であることが判つた。更に、超
音波接合後、線をうまく切るためには伸びの値を
１〜２％の範囲に入れる必要があつた。これらの
条件を満たすような線は、Alに次に示すような
添加元素を含むものであつた。 (1) 0.5〜3.0wt％ Mg (2) 1.0〜3.0wt％ Mn (3) 0.5〜3.5wt％ Cu 第２図には、Mg，Mn，CuをAlに添加した場
合のAl合金線の引張強度と伸びの添加量依存性
を示す。上記組成の下限は、MgとMnの場合に
は引張強度によつて決まり、Cuの場合には伸び
によつて決まつた。また、上限は各々の場合、線
の引き抜き加工性によつて決まつた、添加元素量
が増加すると加工性が悪くなるだけでなく、加工
後（或いはその後の焼純後）線がカールしてしま
い、取扱いが困難になる。 これらの添加元素のうち、MgとMnはAlの耐
食性を向上させるので、樹脂封止の場合等の腐食
性雰囲気中での使用に適している。MgやMnを
添加したAlの腐食状況を第１表に示す。 In semiconductor devices, wire bonding is often used to connect chips to substrates or lead frames. At this time, the strength of the connection portion and the strength of the wire itself have a great influence on the reliability of the semiconductor device. As the wire material,
Au and Al are the main materials, with Au being more abundant. Because Au
This is because it is easier to join, the wire itself has high mechanical strength, and has excellent corrosion resistance. but,
Recently, the price of Au has been rising, so I would like to avoid using Au wire as much as possible. The present invention
This invention relates to semiconductor devices in which aluminum wires are added with elements such as Cu, Mg, and Mn to increase their mechanical strength and, in some cases, improve their corrosion resistance, and are used as bonding wires. Example The conventionally used Al wire contains about 1 wt% of Si and has a tensile strength of about 25 Kgt/mm 2 . If this wire is used for wire bonding with a high-speed automatic ultrasonic bonding machine, the force applied to the wire will be greater than in the case of a conventional bonding machine, which will increase the rate of wire breakage during bonding. Additionally, since Al has lower tensile strength than Au, it is more likely to break when subjected to external forces such as vibration or impact. Furthermore, when the wire is exposed to a corrosive atmosphere as in the case of resin sealing, not only the mechanical strength of the wire but also the corrosion resistance becomes an important factor. Taking the above into consideration, small amounts of various elements are added to Al to change the tensile strength of the wire, thereby increasing the wire breakage rate and bonding force (the force required to pull the wire upward and break it at the wire or joint). After investigating the relationship between the two, it was found that a bonding force of 6 gf or more is required to keep the disconnection failure rate below the set level. Next, the results shown in FIG. 1 were obtained between the bonding force and the tensile strength of the wire. Therefore, from this figure, the tensile strength is 30Kg
It was found that a line of f/mm 2 was required. Furthermore, in order to cut the wire well after ultrasonic bonding, it was necessary to set the elongation value within the range of 1 to 2%. The lines satisfying these conditions contained the following additive elements in Al. (1) 0.5-3.0wt% Mg (2) 1.0-3.0wt% Mn (3) 0.5-3.5wt% Cu Figure 2 shows the tensile strength of Al alloy wire when Mg, Mn, and Cu are added to Al. The dependence of strength and elongation on the amount of addition is shown. The lower limit of the above composition was determined by tensile strength in the case of Mg and Mn, and by elongation in the case of Cu. In addition, the upper limit is determined in each case by the drawing workability of the wire.As the amount of added elements increases, the workability not only worsens, but also the wire curls after processing (or after subsequent sintering). It becomes difficult to handle. Among these additive elements, Mg and Mn improve the corrosion resistance of Al, so they are suitable for use in corrosive atmospheres such as in resin sealing. Table 1 shows the corrosion status of Al added with Mg and Mn.

【表】 さの値の平均値を１としたときの
値
[Table] Value when the average value of the value is 1

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はAl合金線の引張強さとボンデイング
後の接合力との関係を示すグラフ、第２図はAl
にCu，MgもしくはMnを添加した場合の添加元
素量と、強張強さおよび伸びとの関係を示すグラ
フである。 Figure 1 is a graph showing the relationship between the tensile strength of Al alloy wire and the bonding force after bonding.
2 is a graph showing the relationship between the amount of added elements and tensile strength and elongation when Cu, Mg, or Mn is added to the steel.

Claims (1)

【特許請求の範囲】[Claims] １ チツプとの接続にワイヤボンデイングを用い
た半導体装置において、該ワイヤボンデイング用
の線として、0.5〜3.0wt％Mg，1.0〜3.0wt％Mn
および0.5〜3.5wt％Cuからなる群より選択された
少なくとも１元素を含むAl合金からなる線材を
用いてなることを特徴とする半導体装置。1. In a semiconductor device using wire bonding for connection with a chip, 0.5 to 3.0 wt% Mg and 1.0 to 3.0 wt% Mn are used as the wire bonding wire.
A semiconductor device comprising a wire made of an Al alloy containing at least one element selected from the group consisting of Cu and 0.5 to 3.5 wt% Cu.
JP56047170A 1981-04-01 1981-04-01 Semiconductor device Granted JPS57164542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047170A JPS57164542A (en) 1981-04-01 1981-04-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047170A JPS57164542A (en) 1981-04-01 1981-04-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57164542A JPS57164542A (en) 1982-10-09
JPS6353694B2 true JPS6353694B2 (en) 1988-10-25

Family

ID=12767585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047170A Granted JPS57164542A (en) 1981-04-01 1981-04-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164542A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186592U (en) * 1987-05-25 1988-11-30

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124235A (en) * 1982-01-20 1983-07-23 Hitachi Cable Ltd Extrafine aluminum alloy wire for semiconductor device
JPS607165A (en) * 1983-06-24 1985-01-14 Sumitomo Electric Ind Ltd Bonding wire

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186592U (en) * 1987-05-25 1988-11-30

Also Published As

Publication number Publication date
JPS57164542A (en) 1982-10-09

Similar Documents

Publication Publication Date Title
JPH10144718A (en) Tin group lead free solder wire and ball
JPH11288962A (en) Bonding wire
SG186692A1 (en) High strength and high elongation ratio of au alloy bonding wire
JP2001284792A (en) Solder material and method for manufacturing semiconductor device using the same
JPS6353694B2 (en)
JPS6360105B2 (en)
JP4022013B2 (en) Zn alloy for die bonding
JPH0216579B2 (en)
JPH10275820A (en) Gold alloy wire for semiconductor element bonding
JPH0555580B2 (en)
JPS60248861A (en) Aluminum alloy for bonding wire
JP2910527B2 (en) High temperature solder
JPH06112258A (en) Bonding wire for semiconductor element
JP2773202B2 (en) Au alloy extra fine wire for semiconductor element bonding
JPS6350118B2 (en)
JPS62130254A (en) Aluminum alloy for bonding wire
JPH01255236A (en) Composite bonding wire
JP2621288B2 (en) Au alloy extra fine wire for semiconductor element bonding
JPS6095947A (en) Al wire for bonding semiconductor element
JPH03291340A (en) Copper alloy extra fine wire for semiconductor device and semiconductor device
JPS5961939A (en) Aluminum lead for bonding of semiconductor element
JPH06112252A (en) Pt alloy extra fine wire for semiconductor devices
JP3147601B2 (en) Pb alloy solder for semiconductor device assembly with excellent high temperature strength
JPH11347786A (en) Zn alloy for soldering
JP4117973B2 (en) Gold alloy wire for bonding