JPS6350491A - Method for plating amorphous palladium - Google Patents
Method for plating amorphous palladiumInfo
- Publication number
- JPS6350491A JPS6350491A JP19206086A JP19206086A JPS6350491A JP S6350491 A JPS6350491 A JP S6350491A JP 19206086 A JP19206086 A JP 19206086A JP 19206086 A JP19206086 A JP 19206086A JP S6350491 A JPS6350491 A JP S6350491A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- amorphous
- palladium
- film
- superior
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroplating And Plating Baths Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、非晶質パラジウムメッキ皮膜を、室温また
は加温の湿式電解メッキにて、析出させる、非晶質パラ
ジウムメッキ方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to an amorphous palladium plating method in which an amorphous palladium plating film is deposited by wet electrolytic plating at room temperature or at a heated temperature.
従来の技術
従来のパラジウムメッキ皮膜は、結晶性パラジウムメッ
キ皮膜が一般的であるが、湿式電解メッキにより、非晶
質パラジウムメッキ皮膜を得る方法も発明されている。2. Description of the Related Art Conventional palladium plating films are generally crystalline palladium plating films, but a method of obtaining an amorphous palladium plating film by wet electrolytic plating has also been invented.
発明が解決しようとする問題点
しかし、上記した結晶性パラジウムメッキ皮膜は、結晶
構造のために、表面の平滑性に欠け、耐食性にも問題が
ある。Problems to be Solved by the Invention However, the above-mentioned crystalline palladium plating film lacks surface smoothness due to its crystal structure and also has problems in corrosion resistance.
また、湿式電解メッキにより、非晶質パラジウムメッキ
皮膜を得る方法は、電解メッキを−3000の低温で行
うために、電析効率が低く、多量の水素を皮膜中に含み
、室温まで上昇していくうちに、皮膜の結晶化が起るな
ど、作業能率9作業管理2品質の各面で問題がある。In addition, the method of obtaining an amorphous palladium plating film by wet electrolytic plating has a low electrodeposition efficiency because the electrolytic plating is performed at a low temperature of -3000°C, and the film contains a large amount of hydrogen and the temperature rises to room temperature. Over time, crystallization of the coating occurs, causing problems in terms of work efficiency, work management, and quality.
従来より、非晶質構造をもつ単金属及び合金は、結晶構
造をもつものと比較して、物理的、化学的性質にすぐれ
ているため、新素材として注目され、液体急冷法や、ス
パッタリング法、蒸着などの方法により、非晶質の金属
皮膜を得ており、これらの方法にて、非晶質パラジウム
皮膜を得ることも可能であるが、いずれも、加工方法が
容易でなく、高価になる問題がある。Traditionally, single metals and alloys with amorphous structures have attracted attention as new materials because they have superior physical and chemical properties compared to those with crystalline structures, and are used in liquid quenching and sputtering methods. Amorphous metal coatings are obtained by methods such as , vapor deposition, etc., and it is also possible to obtain amorphous palladium coatings by these methods, but the processing methods are not easy and are expensive. There is a problem.
問題点を解決するだめの手段
この発明は、上記の問題点に鑑みてなしたものであり、
非晶質パラジウムメッキ皮膜が、ヒ素を含有するメッキ
浴を用いて、室温または加温の電解メッキにより得られ
ることを、特徴としたものである。Means for Solving the Problems This invention has been made in view of the above problems, and it is possible to form an amorphous palladium plating film by electrolytic plating at room temperature or at a temperature using a plating bath containing arsenic. It is characterized by being obtained by.
ヒ素として、亜と酸ナトリウムなどを用いるものである
。As the arsenic, sodium arsenite or the like is used.
作 用
この発明は上記の手段によるものであり、ヒ素として、
亜ヒ酸ナトリウムを用いて、以下に示す中性のF2DT
A電解液のパラジウムメッキ浴を建浴した。Effect This invention is based on the above means, and as arsenic,
Neutral F2DT shown below using sodium arsenite
A palladium plating bath using electrolyte A was prepared.
EDTA−2N、2 0.3 mat/1
NIZ2SO80,4mol/L
Na2AsO2o、o 1mO4/l
Pd (en) 22+5oln O,1mot
/1上記のメッキ浴より析出するパラジウムの反応機構
を次式に提案してみた。EDTA-2N, 2 0.3 mat/1
NIZ2SO80,4mol/L Na2AsO2o,o 1mO4/l Pd (en) 22+5oln O,1mot
/1 The reaction mechanism of palladium deposited from the above plating bath was proposed using the following equation.
tl1式
%式%
(2)式
As02soln +2H20−As ads −1
−40H−上記の(1)式あるいは(21式で示される
ヒ素の吸着イオンが、活性サイト(Alとして、パラジ
ウムの析出に関与して、亜ヒ酸ナトリウムを含むエチレ
ンジアミンパラジウムtUt錯体からのパラジウムの析
出は、次の(3)〜(5)式のように考えられる。tl1 formula % formula % (2) formula As02soln +2H20-As ads -1
-40H- The arsenic adsorbed ion represented by the above formula (1) or (21) is involved in the precipitation of palladium as an active site (Al), and the arsenic adsorbed ion shown in the above formula (1) or (21) is involved in the precipitation of palladium from the ethylenediamine palladium tUt complex containing sodium arsenite. Precipitation can be considered as shown in the following equations (3) to (5).
(3)式
%式%
(4)式
Pd”ads −Al2 e: Pd ads
−A(5)式
%式%
にてメッキを行ったところ、平滑な非晶質ノ;ラジウム
メッキ皮膜が析出した。(3) Formula % Formula % (4) Formula Pd”ads −Al2 e: Pd ads
-A (5) When plating was performed using formula %, a smooth amorphous radium plating film was deposited.
実施例2゜
パルス電解
メッキ浴温度 25℃
上記の3東件(bl 、 (C1、+(11でパルス電
解を行ったところ、平滑な非晶質パラジウムメッキ皮膜
を得ることができ、水素吸蔵量も著しく低下した。Example 2゜Pulse electrolytic plating bath temperature: 25℃ When pulse electrolysis was performed using the above three conditions (bl, (C1, +(11), a smooth amorphous palladium plating film could be obtained, and the hydrogen storage capacity was has also decreased significantly.
上記の実施例1,2より得たメッキ(a −d )と、
通常の市販液より得られた結晶性パラジウムメッキ(8
1を、5US304材に2μの厚さでメッキし、OA!
3S試験を行ったところ、メッキ(a〜d)は、メッキ
(elに対して、下記に示すような、良好な耐食性を示
す試験結果を得た。Plating (a-d) obtained from Examples 1 and 2 above,
Crystalline palladium plating (8
1 was plated on 5US304 material to a thickness of 2μ, and OA!
When a 3S test was conducted, the platings (a to d) obtained test results showing good corrosion resistance as shown below compared to the plating (el).
図面は、上記各メッキのX線回折図であり、上記の実施
例1,2によって得られた非晶質パラジウムメッキ皮膜
ta+ 、 (1)) 、 (C1、+(11は、いず
れも、−般的な市販のメッキ浴より得られた結晶性パラ
ジウムメッキ皮膜+81と比較して、(200)面取上
の高指数面のピークが消滅して、(111)面がブロー
ドになり、(a −d )の皮膜は、非晶質構造をもっ
ている。The drawings are X-ray diffraction diagrams of each of the above-mentioned platings, and the amorphous palladium plating films ta+, (1)), (C1, +(11) are each - obtained in Examples 1 and 2 above. Compared to the crystalline palladium plating film +81 obtained from a general commercially available plating bath, the peak of the high index plane on the (200) chamfer disappears, the (111) plane becomes broad, and the (a -d) The film has an amorphous structure.
発明の詳細
な説明したように、非晶質パラジウム、メッキ皮膜を、
室温捷たは加温にて容易に得ることができ、装飾用とし
ても良好な平滑な外観全得られ、耐食性にもすぐれたメ
ッキ皮膜が得られて、装飾品などのパラジウムメッキ皮
膜として、すぐれた効果を発揮するものである。As described in detail of the invention, amorphous palladium, plated film,
It can be easily obtained by stirring or heating at room temperature, provides a smooth appearance that is good for decorative purposes, and provides a plating film with excellent corrosion resistance, making it an excellent palladium plating film for ornaments, etc. It has the following effects.
図面は、メッキ皮膜のX線回折図である。 特許出願人 都南金属工業株式会社 池】名 The drawing is an X-ray diffraction diagram of the plating film. Patent applicant: Tonan Metal Industry Co., Ltd. ike】name
Claims (1)
浴を用いて、室温または加温の電解メッキにより得られ
ることを特徴とした、非晶質パラジウムメッキ方法。An amorphous palladium plating method, characterized in that the amorphous palladium plating film is obtained by electrolytic plating at room temperature or with heating using a plating bath containing arsenic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19206086A JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19206086A JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6350491A true JPS6350491A (en) | 1988-03-03 |
Family
ID=16284953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19206086A Pending JPS6350491A (en) | 1986-08-19 | 1986-08-19 | Method for plating amorphous palladium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6350491A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024733A (en) * | 1989-08-29 | 1991-06-18 | At&T Bell Laboratories | Palladium alloy electroplating process |
-
1986
- 1986-08-19 JP JP19206086A patent/JPS6350491A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024733A (en) * | 1989-08-29 | 1991-06-18 | At&T Bell Laboratories | Palladium alloy electroplating process |
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