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JPS6349392B2 - - Google Patents

Info

Publication number
JPS6349392B2
JPS6349392B2 JP53002881A JP288178A JPS6349392B2 JP S6349392 B2 JPS6349392 B2 JP S6349392B2 JP 53002881 A JP53002881 A JP 53002881A JP 288178 A JP288178 A JP 288178A JP S6349392 B2 JPS6349392 B2 JP S6349392B2
Authority
JP
Japan
Prior art keywords
region
base
collector
base electrode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53002881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5526601A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP288178A priority Critical patent/JPS5526601A/ja
Publication of JPS5526601A publication Critical patent/JPS5526601A/ja
Publication of JPS6349392B2 publication Critical patent/JPS6349392B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP288178A 1978-01-14 1978-01-14 Semiconductor apparatus Granted JPS5526601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP288178A JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP288178A JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62257716A Division JPS63132480A (ja) 1987-10-13 1987-10-13 エンハンスメント型絶縁ゲート・トランジスタ

Publications (2)

Publication Number Publication Date
JPS5526601A JPS5526601A (en) 1980-02-26
JPS6349392B2 true JPS6349392B2 (de) 1988-10-04

Family

ID=11541689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP288178A Granted JPS5526601A (en) 1978-01-14 1978-01-14 Semiconductor apparatus

Country Status (1)

Country Link
JP (1) JPS5526601A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8503408A (nl) * 1985-12-11 1987-07-01 Philips Nv Hoogfrequenttransistor en werkwijze ter vervaardiging daarvan.
EP0488334B1 (de) * 1990-11-30 1996-05-15 Intermetallics Co., Ltd. Verfahren und Apparat zur Dauermagnet-Herstellung durch Formieren eines grünen und gesinterten Kompakts
US5672363A (en) * 1990-11-30 1997-09-30 Intermetallics Co., Ltd. Production apparatus for making green compact
DE69307968T2 (de) * 1992-08-10 1997-06-12 Intermetallics Co Ltd Beschichtungsverfahren
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
JPS543598B2 (de) * 1972-05-31 1979-02-24
JPS5412191B2 (de) * 1973-06-22 1979-05-21
JPS5028276A (de) * 1973-07-11 1975-03-22

Also Published As

Publication number Publication date
JPS5526601A (en) 1980-02-26

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