JPS6347769A - Method for correcting pattern defect - Google Patents

Abstract

PURPOSE:To prevent new occurrence of a defect due to reattachment at the time of sputter etching of an excessive metal film defect by coating and protecting the surface of a pattern adjacent to the defect with an organic film in advance. CONSTITUTION:The sample is placed in a high-vacuum chamber, and a carbon- containing gas 5 ejected on the surface of the sample, and at the same time, gallium ion beams 4 are projected on the black spot defect 3 and its circumference, resulting in depositing the organic carbon films 6 on the ion beam- projected parts. The organic carbon film 6 and the black spot chromium defect 3 are removed by the sputter etching, and the sputtered chromium is reattached to the organic carbon films 6 as the reattached chromium films 7, 8 but not attached to the surface of a glass substrate 1 and the chromium pattern 2, and the clean pattern free from reattached metal film can be obtained by removing the organic carbon films by using a chemical agent after thus correcting the pattern defect.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a defect correction method for correcting defects in an excess metal film of a mask used in semiconductor manufacturing.

(Prior art) Photomasks or X
Defects in excess metal film of line mask (hereinafter referred to as black pin defects)
In order to correct this, a method is used in which a laser beam or an ion beam is selectively irradiated onto the removed area of the metal film, and the metal film is removed by evaporation or spot etching.

Such methods are described, for example, in the journal Vacuum Science Technology;
B3(1) Jan/Feb1985, P87
~90 Yoshi, P. J., Heard, J. R.
A.

'Appl by C1ever and H. Ahmed et al.
cation ofa focused fan
beam system to defect rep
air of VLS I masks'.

FIGS. 2(a) to 2(c) are diagrams showing the steps of the black pin defect removal method described above. First, as shown in FIG. 2(a), it is assumed that there is a chrome black pin defect 3 due to an excess chromium pattern formed on the glass substrate 1.

As shown in FIG. 2(b), this sample is irradiated with a gallium ion beam 4 to remove the chromium black pin defect 3 by sputtering.

(Problem to be solved by the invention) At this time, the removed chrome black pin defect 3 is shown in FIG.
), there was a problem in that the chrome ivy 2 was redeposited on the side wall of the adjacent chrome ivy 2 and a new ROM defect 5 was generated.

This invention solves the problems of the above-mentioned prior art.
This invention solves the problem of generating new ROM defects when removing black pin defects, and provides a nine-pattern defect repair method.

(Means for Solving the Problems) In the pattern defect repair method, the present invention forms a protective film on the surplus pattern defect and its surroundings before removing the surplus A tan defect by sputtering, and In this method, a process is introduced in which after selectively removing the protective film, excess pattern defects are removed by etching.

(Function) According to the present invention, since the above-described steps are introduced in the pattern defect repair method, the protective film covers the periphery of the excess pattern defect, so that the redeposited metal film is removed by this protective film. When the protective film is removed, it adheres to the surface and is removed while leaving behind a metal film, which acts to maintain a clean surface even after the removal of the excess/tanning defects, thus eliminating the above-mentioned problems. .

(Example) Hereinafter, an example of the 71 tan defect repair method of the present invention will be described based on the drawings. Figure 1(a) to Figure 1(
d) is a process explanatory diagram of one example. This figure 1 (
a) to Fig. 1(d), Fig. 2(a) to Fig. 2(
The same parts as c) will be described with the same reference numerals.

First, as shown in FIG. 1(a), a chromium pattern 2 is formed on a glass substrate l. At this time, the black pin defect 3 of chromium exists as an extra defect pattern.

Such a sample is placed in a high vacuum chamber, and the sample shown in Figure 1 (
As shown in b), a gallium ion beam 4 is irradiated onto the black pin defect 3 and its surroundings while ejecting a carbon-containing gas 5 onto the sample surface.

At this time, the carbon organic film 6 is deposited on the ion beam irradiated area due to gas decomposition.

Next, when the gas introduction is stopped and the gallium ion beam 4 is irradiated only to the black pin defect portion 3, as shown in FIG. 1(c), the carbon organic film 6. The black pin defect 3 of chromium is removed by sputter etching. In FIG. 1 (c), reference numeral 7 indicates the defect removed portion where the black pin defect 3 has been removed.

At this time, the sputtered chromium re-deposit on the bottom surface of the carbon organic film 6 as redeposited chromium 8, but the glass substrate 1
or the surface of the chrome pattern 2.

In this way, when the carbon organic film 6 is removed using chemicals after repairing the chrome defects, a clean carbon film 6 with no redeposition is left on the surface of the chrome ivy 2, as shown in FIG. 1(d). It is formed.

Next, a second embodiment of the invention will be described.

In the first embodiment, the carmen organic film 6 covering the adjacent chromium pattern 2 is selectively formed using gas decomposition using a gallium ion beam 4. Resist film created by beam irradiation.

The black pin defects 3 in chromium can be selectively etched.

In addition, as a third embodiment, a similar process is used to repair defects in tantalum absorber patterns in X-ray masks.
Clean pattern correction without redeposition is possible.

(Effects of the Invention) As described in detail above, according to the present invention, when removing surplus metal defects by sputter etching, the adjacent itanium surface is coated and protected with an organic film in advance, so that metal Generation of new defects due to redeposition during film sputtering can be prevented.

Furthermore, since the organic protective film can be formed using the ion beam used for metal film sputtering, there are advantages such as the number of steps and equipment required for correction being small and simple.

[Brief explanation of the drawing]

1(a) to 1(d) are process explanatory diagrams of an embodiment of the Nocetan defect repair method of the present invention, and FIGS. 2(a) to 2(c) are conventional Nocetan defect repair methods. It is a process explanatory diagram of the method. 1...Glass substrate, 2...Chromium/#tan, 3...
- Black pin defect, 4... Gallium ion, 5... Gas containing carbon, 6... Carbon organic film, 7... Defect removed portion, 8... Redeposited chromium.

Claims (5)

[Claims] (1) (a) Forming a protective film on at least a region including the defective pattern on the substrate having the surplus pattern defect; (b) Selectively irradiating the surplus pattern defect with an energy beam to form the protective film on the substrate having the surplus pattern defect; and a step of etching away surplus pattern defects; (c) a step of removing surplus defects reattached to the protective film and its surface. (2) The pattern defect correction method according to claim 1, wherein the protective film is an organic film produced by decomposing an organic gas by ion beam irradiation or laser beam irradiation. (3) The pattern defect correction method according to claim 1, wherein the protective film is a coated resist film. (4) The pattern defect repair method according to claim 1, wherein the energy beam is a focused ion beam. (5) The pattern defect repair method according to claim 1, wherein the energy beam is a laser beam.