JPS63461A - High-speed vapor deposition method - Google Patents

Abstract

PURPOSE:To form a vapor deposited film at a high speed on a substrate without requiring a crucible consisting of a high melting material by projecting an electron beam at a specified angle to a vapor deposition material near the surface of the substrate moving at a specified speed at the time of forming the vapor deposited film on the substrate by a vacuum deposition method. CONSTITUTION:The vapor deposition material 2 is supplied by inclining the same at the specified angle theta1 with the reference line X-Y at the time of forming a thin metallic film by evaporation on the surface of the substrate 1 which consists of an iron sheet, polyester film, etc., and is kept moved at the specified speed V by a feed roller 3. The electron beam EB inclined at the specified angle theta2 with the reference line X-Y is projected from the opposite side to the vapor deposition material 2 from an electron gun 5 in synchronization with said supply so as to be projected to the material 2 at the point P of a distance G from the surface of the substrate 1. The material 2 is heated and evaporated by the electron beam EB to metallic vapor; at the same time, the electron gun 5 is oscillated laterally in conformity with the width of the substrate 1, by which the uniform vapor deposited film is formed at a high speed on the substrate surface without requiring a crucible for melting the vapor deposition material.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for high-speed vapor deposition of evaporated metals.

[Conventional technology]

FIG. 3 is a schematic diagram showing a conventional metal vapor deposition method. In the figure, the evaporation material 2 is supplied from the evaporation material supply device 4 toward the ruppo 6, and the electron gun 5 is further supplied toward the ruppo 6.
An electron beam EB is emitted from the crucible 6 to create molten metal in the crucible 6, which is further heated to become evaporated metal. A substrate 1 to be deposited is moved by a feed roller 3 on the upper side of the roppo 6, and a shutter 7 is provided on the lower surface of the substrate 1 in order to uniformly deposit the deposition material 2.

Next, this effect will be explained.

The molten deposition material 2 in the crucible 6 receiving the electron beam EB from the electron gun 5 evaporates and rises, touches the substrate 1 and is deposited.
Form a metal film. The substrate 1 is moved at a constant speed by a feed o--73, and the contact time with the vapor deposition material 2 is adjusted by a shutter 7, so that a uniform metal film is formed on the substrate 1. Note that these operations are performed in a vacuum deposition chamber.

[Problem that the invention seeks to solve]

In the conventional method, in order to evaporate the deposition material 2 in the crucible 6, the inside of the crucible 6 is heated to a very high temperature (2000°C to 400°C).
0°C). This Taruppo 6 is required to have excellent heat resistance and durability, but there is a problem that sufficient properties cannot be obtained.

[Means for solving problems]

The present invention has been made to solve such problems, and is to supply a deposition material from one side at a constant angle to a substrate that is fed at a constant speed, and in synchronization with this, to supply a deposition material at a constant angle from the other side. , provides a high-speed evaporation method in which a evaporation material is deposited on a substrate by irradiating an electron beam so as to hit the tip of the evaporation material at a certain distance from the substrate.

[Effect]

When the evaporation material and the electron beam intersect in front of the substrate, the evaporation material evaporates and becomes metal vapor, which touches the substrate and is deposited as a metal film on the surface of the substrate.

〔Example〕

FIG. 1 is a schematic diagram of an embodiment of the present invention, in which (A) is a side view and (B) is a front view. In the figure, 1 is a substrate (for example, an iron plate or a polyethylene film) that is moved by a feed roller 3 at a constant speed in the direction of the arrow. The vapor deposition material 2 is sent out from the vapor deposition material supply device 4 from one side to B, and the electron beam EB is irradiated from the electron gun 5 from the other side, and the vapor deposition material 2 and It's crossed. In addition, the electron gun 5 and the vapor deposition material 2 are synchronized as shown in FIG.
As shown in B), the structure is such that the vicinity of the surface of the substrate 1 can be onlaid left and right. On this occasion,
A spot beam or a linear beam may be used.

Next, this effect will be explained.

FIG. 2 is a detailed enlarged view of a part of FIG. 1(A).

As shown in the figure, the feed roller 3 is driven to move the substrate 1 at a constant speed V, and at the same time the feeder 4 is moved from one side.
is driven, and the vapor deposition material 2 is supplied at a constant angle θ1 with respect to the reference 1X-Y. In synchronization with this, the electron gun 5 is tilted at a constant angle θ2 with respect to the reference line X-Y from the other side.
Irradiate the electron beam EB to a distance # from the surface of the substrate 1.
It hits the vapor deposition material 2 at point P where G is placed. As a result, the deposition material 2 is heated to a high temperature by the electron beam EB, evaporates into metal vapor, and is deposited on the substrate 1 to form a metal film. Since the substrate 1 moves at a constant speed V, the evaporation material 2 is also supplied at a constant speed V, and the electron beam EB is continuously irradiated, the evaporation work can be performed continuously. Further, by synchronizing the electron gun 5 and the vapor deposition material 2 and orienting them left and right in accordance with the width of the substrate 1 as shown in FIG. 1(B), uniform vapor deposition can be performed over the entire substrate 1.

Furthermore, at this time, part of the beam power of the electron beam EB is P
It is also possible to penetrate the point and reach the substrate 1 to raise the temperature of the substrate 1 and to have a preheating effect. The above effects (the feeding speed V of the substrate 1).

The supply rate Vl of the vapor deposition material 2, the inclination angle θ3 of the vapor deposition material with respect to the reference line X-Y, and the inclination angle θ2 of the electron beam EB
and the distance iG of the intersection point P from the substrate 1 are parameters, and by adjusting these values Fl, high efficiency can be achieved.

〔Effect of the invention〕

According to the present invention, since the vapor deposition material is evaporated near the substrate to enable vapor deposition, a crucible is not required, and the working time is also effectively shortened.

[Brief explanation of drawings]

Fig. 1 is a schematic diagram of an embodiment of the present invention, (A) is a side view, (B) is a front view, Fig. 2 is a partially detailed view of Fig. 1 (A), and Fig. 3 is a conventional FIG. 2 is a schematic diagram of an example. 1: Substrate, 2: Vapor deposition material, 3: Feed roller, 4: Supply device, 5: Electron gun, 6: Crucible. Agent Patent Attorney Tadashi Sato Figure 1 147 (Al
+B) Figure 2 Figure 3

Claims (1)

[Claims] A vapor deposition material is supplied from one side at a certain angle to a substrate that is being fed at a constant speed, and in synchronization with this, an electron beam is applied from the other side at a certain angle and at a certain distance from the substrate so as to hit the tip of the vapor deposition material. A high-speed deposition method that uses irradiation to deposit the deposition material onto the substrate.