JPS63314802A - Thick film varistor - Google Patents
Thick film varistorInfo
- Publication number
- JPS63314802A JPS63314802A JP62151750A JP15175087A JPS63314802A JP S63314802 A JPS63314802 A JP S63314802A JP 62151750 A JP62151750 A JP 62151750A JP 15175087 A JP15175087 A JP 15175087A JP S63314802 A JPS63314802 A JP S63314802A
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- mixed
- glass
- zno
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 11
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 12
- 239000000203 mixture Substances 0.000 abstract description 10
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 6
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000005977 Ethylene Substances 0.000 abstract description 3
- 229920002678 cellulose Polymers 0.000 abstract description 3
- 239000001913 cellulose Substances 0.000 abstract description 3
- 238000010304 firing Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052839 forsterite Inorganic materials 0.000 abstract description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、厚膜バリスタに関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a thick film varistor.
（従来の技術）
従来から、非直線的な電流−電圧特性を持っ２端子素子
で主に衝撃電圧の抑制や雑音吸収、温度補償等に用いら
れるものとして厚膜バリスタが知られている。(Prior Art) Thick film varistors have been known as two-terminal devices with nonlinear current-voltage characteristics that are mainly used for suppressing shock voltage, absorbing noise, and compensating for temperature.
との厚膜バリスタとは絶縁基板上に焼成された銀等の電
極の上に、半導体結晶粒としてのＺｎＯと該半導体結晶
粒の結合剤としてのガラスフリットとを空気中で焼成し
たバリスタ層を積層し、その上に銀電極等を焼成し、該
バリスタ層をサンドインチ状に挟持した構造のものであ
る。A thick film varistor is a varistor layer in which ZnO as semiconductor crystal grains and glass frit as a binder for the semiconductor crystal grains are fired in air on an electrode made of silver or the like fired on an insulating substrate. It has a structure in which the varistor layer is laminated, a silver electrode etc. is fired on top of the varistor layer, and the varistor layer is sandwiched in a sandwich-like manner.
（発明が解決しようとする問題点）
ところで、上記厚膜バリスタを構成するガラスフリット
中の酸化ホウ素（Ｂｚｏａ）はＺｎＯ等の酸化物を溶解
する特性を有しており、よって上記ＺｎＯ等の半導体酸
化物とガラスフリットとを混合焼成すると、上述の如く
、酸化ホウ素（Ｂ ２０３ ）が半導体酸化物を溶解し
てしまうので、そのバリスタ特性が極めて不安定になっ
てしまうという問題点があった・
本発明の目的は、安定したバリスタ特性を発揮する厚膜
バリスタを提供することにある。(Problems to be Solved by the Invention) By the way, boron oxide (Bzoa) in the glass frit constituting the thick film varistor has the property of dissolving oxides such as ZnO, and therefore, When oxide and glass frit are mixed and fired, as mentioned above, boron oxide (B 203 ) dissolves the semiconductor oxide, resulting in the problem that the varistor properties become extremely unstable. An object of the present invention is to provide a thick film varistor that exhibits stable varistor characteristics.
（問題点を解決するための手段）
本発明の厚膜バリスタは上記目的を達成するために、２
種類の半導体酸化物を混合し、焼結してなる電気伝導性
酸化物の粉末粒子と、これを結合するための酸化バリウ
ム（ＢａＯ）と酸化ホウ素（Ｂ２Ｏ−）と上記電気伝導
性酸化物若しくは上記２種類の半導体酸化物とから成る
ガラス成分とでバリスタ膜が構成されていることを特徴
とする。(Means for Solving the Problems) In order to achieve the above object, the thick film varistor of the present invention has two features.
Powder particles of electrically conductive oxide obtained by mixing and sintering different types of semiconductor oxides, barium oxide (BaO) and boron oxide (B2O-) for bonding the powder particles, and the electrically conductive oxide or The varistor film is characterized in that it is constituted by a glass component consisting of the above two types of semiconductor oxides.
（作 用）
本発明によれば、ガラス成分中に予め添加される、２種
類の半導体酸化物を混合して焼結してなる電気伝導性酸
化物、若しくは上記２種類の半導体酸化物は予めガラス
成分中の酸化ホウ素（Ｂ、Ｏ，）により充分溶解され、
新たに混合する２種類の半導体酸化物の焼結よりなる電
気伝導性酸化物の粉末粒子をほとんど溶解させないよう
に働く。(Function) According to the present invention, the electrically conductive oxide formed by mixing and sintering two types of semiconductor oxides, or the above two types of semiconductor oxides, is added in advance to the glass component. It is sufficiently dissolved by boron oxide (B, O,) in the glass component,
It works so as to hardly dissolve the electrically conductive oxide powder particles formed by sintering two types of semiconductor oxides to be newly mixed.
（実施例） 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
まず、２種類の半導体酸化物ＺｎＯとＦｅ２Ｏ３とを所
定の組成比、すなねち本実施例においては、２１０７０
〜９９重量％、Ｆｅ２０３３０〜１重量％となるよう正
確に秤量し、該原料をボールミル等で混合し１ｍｍφ〜
５ｍｍφにした後乾燥し、その後１１００〜１４００℃
で０．５〜１０時間焼成する。そしてこの焼結体、すな
わちＺｎ−フェライトと称せられる電気伝導性酸化物を
粉砕機にかけて４００メツシユ以下に微粉砕し、１０μ
ｍ前後の必要な粒径のみにふるい分ける。First, two types of semiconductor oxides, ZnO and Fe2O3, are mixed at a predetermined composition ratio, that is, in this example, 21070
Weigh accurately so that the amounts are ~99% by weight and Fe20330 ~1% by weight, and mix the raw materials with a ball mill etc. to a size of 1 mmφ ~
After cutting to 5mmφ, dry and then heat at 1100~1400℃
Bake for 0.5 to 10 hours. Then, this sintered body, that is, an electrically conductive oxide called Zn-ferrite, was pulverized to 400 mesh or less using a pulverizer.
Sieve only the required particle size around m.
一方ガラス成分としてのガラスフリット粉末は、本実施
例においてはＺｎＯとＦｅ２Ｏ，とＢａＯ及びＢ２Ｏ３
とで構成され、所定の組成比、すなわちＺｎＯ４０〜１
０重量％、Ｆｅ、０３１０〜１重量％。On the other hand, in this example, the glass frit powder as a glass component is ZnO, Fe2O, BaO, and B2O3.
and a predetermined composition ratio, that is, ZnO40~1
0% by weight, Fe, 0310-1% by weight.
Ｂａ０４５〜ＩＯ重量％、Ｂ２ｏ：１５０〜２５重量％
になるよう計量混合され、１１００℃以上の高温で溶融
された後、水中で急冷され、所要の粒径まで微粉砕され
生成される。ここで上記ＺｎＯとＦｅ２Ｏ，との組成比
は、前述のＺｎ−フェライトを生成するＺｎＯとＦｅ、
Ｏ，との組成比、例えばＺｎＯとＦｅ２Ｏ，とが８：２
の割合であるならば、それと同じ割合となっている。こ
のように、本発明においては、ガラス成分中にＺｎＯや
Ｆｅ２Ｏ３等の酸化物を予め混入しておき、Ｂ、Ｏ，が
ＺｎＯやＦｅ、０３等を充分溶解し得るようにしている
。そして共に混入されるＢａＯは、ガラスの融点の調整
のために用いられている。Ba045-IO weight%, B2o: 150-25 weight%
After being mixed and measured at a high temperature of 1100° C. or higher, it is rapidly cooled in water and pulverized to a desired particle size. Here, the composition ratio of ZnO and Fe2O is as follows:
For example, the composition ratio of ZnO and Fe2O is 8:2.
If the ratio is the same, then it is the same ratio. As described above, in the present invention, oxides such as ZnO and Fe2O3 are mixed in the glass component in advance so that B, O, and the like can sufficiently dissolve ZnO, Fe, 03, etc. BaO, which is also mixed in, is used to adjust the melting point of the glass.
斯くの如くして生成されたＺｎ−フェライト粉末粒子３
０〜８０重量％とガラスフリット粉末粒子７０〜２０重
量％とを混合し、得られた固形分子にエチレンセルロー
スと溶剤としてのＢ、Ｃ，Ａを加えて良く混練し、ペー
スト状にして、バリスタペーストとする。Zn-ferrite powder particles 3 produced in this way
0 to 80% by weight and 70 to 20% by weight of glass frit powder particles are mixed, and ethylene cellulose and B, C, and A as solvents are added to the obtained solid molecules and kneaded well to form a paste. Make a paste.
一方、上記手順と平行して図に示される如く。Meanwhile, as shown in the figure in parallel with the above procedure.
アルミナフォルステライト結晶化ガラス等よりなる耐熱
性絶縁基板１上に、Ａｇ、Ａｕ、Ｐｔ等よりなる導電ペ
ーストをスクリーン印刷法により印刷し、焼成（して下
部電極２として積層する。A conductive paste made of Ag, Au, Pt, etc. is printed on a heat-resistant insulating substrate 1 made of alumina forsterite crystallized glass or the like by a screen printing method, and then fired (and laminated as a lower electrode 2).
そして該下部電極２上に前述したバリスタペーストをス
クリーン印刷法で印刷し、乾燥後７００〜１０００℃で
焼成して、バリスタ層３として積層する。Then, the above-mentioned varistor paste is printed on the lower electrode 2 by a screen printing method, and after drying, it is fired at 700 to 1000° C. to form a varistor layer 3.
ここで従来だとガラス成分中のＢ２０．が、Ｚｎ−フェ
ライトを構成するＺｎＯやＦｅ２Ｏ，を、その焼成時に
溶解してしまうわけであるが、本発明では前述のように
、ガラス成分中に予めＺｎＯやＦｅ２ｏ３が添加されて
おり、Ｂ２０．が該ＺｎＯやＦｅ、Ｏ，を予め充分溶解
しているので、新たにＺｎ−フェライトを構成するＺｎ
ＯやＦｅ２Ｏ，を溶解することはない。Here, in the conventional case, B20 in the glass component. However, ZnO and Fe2O, which constitute Zn-ferrite, are dissolved during firing, but in the present invention, as mentioned above, ZnO and Fe2O3 are added to the glass component in advance, and B20. Since the ZnO, Fe, and O are sufficiently dissolved in advance, the Zn that newly constitutes the Zn-ferrite is
It does not dissolve O or Fe2O.
その後前述と同様な方法により、バリスタ層３の上に上
部電極４を積層する。Thereafter, the upper electrode 4 is laminated on the varistor layer 3 by the same method as described above.
このようにして得られた図に示されるようなサンドイン
チ型の厚膜バリスタ５は、前述の如く、その焼成時に電
気伝導性酸化物（Ｚｎ−フェライト）がガラス中にほと
んど溶融することがないので、安定したバリスタ特性を
有するようになる。As mentioned above, in the sandwich-type thick film varistor 5 shown in the diagram obtained in this way, the electrically conductive oxide (Zn-ferrite) hardly melts into the glass during firing. Therefore, it has stable varistor characteristics.
因に本発明者の実験によると、Ｚｎ０９０重量％とＦｅ
、０．１０重量％とを上述のガラスフリット粉末粒子、
エチレンセルロース、 Ｂ、Ｃ，Ａと混合して厚膜バリ
スタを形成し、１ｍＡ流れる時の電圧値Ｅ１．１０ｍＡ
流れる時の電圧値Ｅ工。を計測し、電圧非直線指数αを
算出したところ、
Ｅ１＝１９．３Ｖ
Ｅよ。＝２８．２Ｖ
α＝６ となり、バリスタ特性の優れた厚膜バリスタが
得られるということが実証された。According to the inventor's experiments, 90% by weight of Zn0 and Fe
, 0.10% by weight of the glass frit powder particles described above,
Ethylene cellulose is mixed with B, C, and A to form a thick film varistor, and the voltage value when 1 mA flows is E1.10 mA.
Voltage value E when flowing. When we measured and calculated the voltage nonlinear index α, we found that E1=19.3V E. =28.2V α=6, and it was verified that a thick film varistor with excellent varistor characteristics could be obtained.
また上記実施例におけるガラスフリット粉末を、Ｚｎ−
フェライトとＢａＯ及びＢ２Ｏ３とで構成し、その組成
比を、Ｚｎ−フェライト４０〜１０重量％。Further, the glass frit powder in the above example was replaced with Zn-
It is composed of ferrite, BaO and B2O3, and the composition ratio thereof is 40 to 10% by weight of Zn-ferrite.
Ｂａ０４５〜ｌＯ重量％、Ｂ２ｏ３５０〜２５重量％と
して該粉末を生成するようにしても良く、そのようにし
ても先の実施例と同様な効果が得られた。The powder may be produced with Ba045 to 10% by weight and B2o350 to 25% by weight, and the same effect as in the previous example was obtained even in this case.
そしてここでも、上記ガラスフリット中のＺｎ−フェラ
イトを構成するＺｎＯとＦｅ、０３との組成比は、電気
伝導性酸化物として後に混合することになるＺｎ−フェ
ライトのＺｎＯとＦｅ、Ｏ，との組成比と同じ割合とな
っている。Also here, the composition ratio of ZnO and Fe, O, which constitute the Zn-ferrite in the glass frit, is the same as the composition ratio of ZnO and Fe, O, of the Zn-ferrite that will be mixed later as an electrically conductive oxide. The ratio is the same as the composition ratio.
ところで、上記実施例においては、Ｎ型半導体酸化物と
してのＺｎ○とＦｅ、Ｏ，とがら電気伝導性酸化物とし
てのＺｎ−フェライトを生成する例を示しているが、次
に示すような安価なＮ型半導体酸化物、例えばＴｉ２０
．ＣｒＯ２，ＭｏＯ２Ｔ Ｗ Ｏ２＋ＢａＭｏ０．．
ＣａＭｏＯ３，５ｒＣｒ○、、ＣａＣｒＯ３等の中から
２種類を混合し焼結して電気伝導性酸化物を生成するよ
うにし、酸化バリウム（Ｂ ａ Ｏ）と酸化ホウ素（Ｂ
ａＯ３）と該電気伝導性酸化物、若しくは該電気伝導性
酸化物を構成する２種類の半導体酸化物とより成るガラ
ス成分と混合、焼結することにより厚膜バリスタを構成
するようにしても勿論良い。By the way, in the above example, Zn○ as an N-type semiconductor oxide and Fe, O, and Zn-ferrite as an electrically conductive oxide are produced, but an inexpensive method such as the one shown below is shown. N-type semiconductor oxide, e.g. Ti20
．． CrO2, MoO2T W O2+BaMo0. ．．
Barium oxide (B a O) and boron oxide (B
Of course, a thick film varistor may be constructed by mixing and sintering a glass component consisting of aO3) and the electrically conductive oxide, or two types of semiconductor oxides constituting the electrically conductive oxide. good.
さらにまた、空気中で焼結するとその特性が発揮できな
い、Ｐ型半導体酸化物としてのＣｕ２ＯとＴｉＯとを不
活性ガス、例えば窒素若しくはアルゴン中で混合焼成し
、電気伝導性酸化物Ｃｕ２Ｏ−ＴｉＯを生成するように
し、酸化バリウム（ＢａＯ）と酸化ホウ素（Ｂ２０．）
とＣｕ２０−ＴｉＯ、若しくはＣｕ２ＯとＴｉＯとより
成るガラス成分と混合、焼結することにより厚膜バリス
タを構成するようにすることも可能である。Furthermore, Cu2O and TiO, which are P-type semiconductor oxides that cannot exhibit their properties when sintered in air, are mixed and fired in an inert gas such as nitrogen or argon to form an electrically conductive oxide Cu2O-TiO. to produce barium oxide (BaO) and boron oxide (B20.)
It is also possible to form a thick film varistor by mixing and sintering with a glass component consisting of Cu2O-TiO or Cu2O and TiO.
なお、上記実施例の厚膜バリスタは、図に示される如く
サンドイッチ型であるが、プレーナー型にも適用できる
というのはいうまでもない。The thick film varistor of the above embodiment is a sandwich type as shown in the figure, but it goes without saying that it can also be applied to a planar type.
（発明の効果）
以上のように本発明によれば、ガラス成分中に予め添加
される。２種類の半導体酸化物を混合して焼結してなる
電気伝導性酸化物、若しくは上記２種類の半導体酸化物
が予めガラス成分中の酸化ホウ素（Ｂ２０３）により充
分溶解され、新たに混合する２種類の半導体酸化物の焼
結よりなる電気伝導性酸化物の粉末粒子をほとんど溶解
させないようにし得るので、安定したバリスタ特性を有
する厚膜バリスタを提供することが可能となる。(Effects of the Invention) As described above, according to the present invention, it is added in advance to the glass component. An electrically conductive oxide formed by mixing and sintering two types of semiconductor oxides, or two types of semiconductor oxides that are sufficiently dissolved in advance with boron oxide (B203) in the glass component and then newly mixed. Since powder particles of an electrically conductive oxide made of sintered semiconductor oxides of various types can be hardly dissolved, it is possible to provide a thick film varistor having stable varistor characteristics.
図は本発明の一実施例を示す厚膜バリスタの概略断面図
である。
３・・・バリスタ膜、５・・・厚膜バリスタ手続ネ市正
書（方式）
昭和６２年？月 １日
１、事件の表示
昭和６２年特許願第１５１７５０号
２、発明の名称
厚膜バリスタ
３、補正をする者
事件との関係 特許出願人
名 称 （２２３）株式会社三協精機製作所４、
代 理 人
住 所 東京都世田谷区経堂４丁目５番４号６、補正の
対象
明細書の「発明の詳細な説明」の９
７、補正の内容The figure is a schematic cross-sectional view of a thick film varistor showing one embodiment of the present invention. 3...Varistor film, 5...Thick film varistor procedure manual (method) 1986? Month 1, 1, Display of the case Patent Application No. 151750 of 1988 2, Name of the invention Thick film varistor 3, Person making the amendment Relationship to the case Patent applicant name (223) Sankyo Seiki Seisakusho Co., Ltd. 4,
Agent Address: 4-5-4-6, Kyodo, Setagaya-ku, Tokyo, 9-7, “Detailed Description of the Invention” of the specification to be amended, Contents of the amendment
Claims (1)
性酸化物の粉末粒子と、これを結合するための酸化バリ
ウム（ＢａＯ）と酸化ホウ素（Ｂ＿２Ｏ＿３）と上記電
気伝導性酸化物若しくは上記２種類の半導体酸化物とか
ら成るガラス成分とでバリスタ膜が構成されていること
を特徴とする厚膜バリスタ。Electrically conductive oxide powder particles formed by mixing and sintering two types of semiconductor oxides, barium oxide (BaO) and boron oxide (B_2O_3) for bonding the particles, and the above-mentioned electrically conductive oxides or A thick film varistor characterized in that the varistor film is constituted by a glass component comprising the above two types of semiconductor oxides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151750A JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151750A JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63314802A true JPS63314802A (en) | 1988-12-22 |
| JPH0412004B2 JPH0412004B2 (en) | 1992-03-03 |
Family
ID=15525469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62151750A Granted JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314802A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008530815A (en) * | 2005-02-21 | 2008-08-07 | エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート | Electrical and electronic system protection circuit using abrupt metal-insulator transition element and electrical and electronic system including the circuit |
| JP2008533736A (en) * | 2005-03-18 | 2008-08-21 | エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート | Low voltage noise prevention circuit using abrupt metal-insulator transition element |
-
1987
- 1987-06-18 JP JP62151750A patent/JPS63314802A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008530815A (en) * | 2005-02-21 | 2008-08-07 | エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート | Electrical and electronic system protection circuit using abrupt metal-insulator transition element and electrical and electronic system including the circuit |
| JP2008533736A (en) * | 2005-03-18 | 2008-08-21 | エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート | Low voltage noise prevention circuit using abrupt metal-insulator transition element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0412004B2 (en) | 1992-03-03 |
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