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JPS6331413Y2 - - Google Patents

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Publication number
JPS6331413Y2
JPS6331413Y2 JP1983176227U JP17622783U JPS6331413Y2 JP S6331413 Y2 JPS6331413 Y2 JP S6331413Y2 JP 1983176227 U JP1983176227 U JP 1983176227U JP 17622783 U JP17622783 U JP 17622783U JP S6331413 Y2 JPS6331413 Y2 JP S6331413Y2
Authority
JP
Japan
Prior art keywords
semiconductor laser
circuit
output
transistor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1983176227U
Other languages
Japanese (ja)
Other versions
JPS6083266U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17622783U priority Critical patent/JPS6083266U/en
Publication of JPS6083266U publication Critical patent/JPS6083266U/en
Application granted granted Critical
Publication of JPS6331413Y2 publication Critical patent/JPS6331413Y2/ja
Granted legal-status Critical Current

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  • Protection Of Static Devices (AREA)

Description

【考案の詳細な説明】 イ 産業上の利用分野 本考案は、半導体レーザの保護回路に関する。 ロ 従来技術 周囲温度の変化、レーザ自身の劣化等に拘ら
ず、半導体レーザの発振出力が一定となるように
構成した半導体レーザの駆動回路には、例えば第
1図に示すものがある。図に於いて、1は半導体
レーザ、2はモニター用フオトダイオードで、両
者は同一のキヤツプ内に収納されている。レーザ
出力が増大すると、モニター用フオトダイオード
2に流れる電流は増大し、この電流は増幅回路3
にて電圧に変換される。これが比較電圧として比
較回路4に印加される。一方、比較回路4の他方
の入力端子には抵抗R1,R2、可変抵抗器R3、ツ
エナーダイオード5等にて設定される基準電圧が
印加される。この比較回路4の出力に基いてトラ
ンジスタ6が制御され、以つて半導体レーザ1の
出力が一定となるように制御される。尚、電源7
は、その変動分の影響を抑えるべく平滑回路を内
蔵している。 さて、斯かる従来回路に於いては、モニター用
フオトダイオードの出力線路に接触不良等の瞬時
の断線があつた場合、半導体レーザ1に対して、
定格以上の電流を流すこととなり、半導体レーザ
1を完全に破壊してしまう惧れがあつた。従来回
路に於いても電流制限用抵抗R4が設けられてい
るが、これだけでは十分な保護が図れない。 ハ 考案の目的 本考案は簡単な回路にて、半導体レーザを保護
せんとするものである。 ニ 考案の構成 本考案はモニター用フオトダイオードの出力の
低下に応答して半導体レーザの駆動線路を開放す
るスイツチング回路を設けたものである。 ホ 実施例 本実施例に於いては、第1図に示す従来回路に
対して、更にスイツチングトランジスタ8,9に
て構成されるスイツチング回路10設けている。
通常状態に於いては、トランジスタ8はオン、ト
ランジスタ9はオフとなつている。 さて、モニター用フオトダイオード2の出力線
路に於いて瞬時断線が生じると増幅回路3の出力
電圧が大きく低下し、トランジスタ8はオフに反
転する。するとトランジスタ9がオン状態に反転
し、半導体レーザ1の駆動線路が開放される。即
ち、半導体レーザ1に過大電流が流れるのが阻止
される。 尚、電源投入時に於いて、スイツチング回路
0が誤動作しないように、トランジスタ9のバイ
アス電源は、電源7よりも立ち上りの遅い遅延電
源11とする。 ヘ 考案の効果 本考案に依れば、簡単な構成にて半導体レーザ
を瞬時断線に起因する破壊から保護することがで
きる。 尚、本願考案と同様の考案は実公昭56−23904
号にも開示されている。この従来技術に於いて
は、異常動作時、半導体レーザの駆動回路の入力
側電圧を遮断している為、回路に含まれるコンデ
ンサ等により応答が遅くなる。これに対して、本
願考案に於いては、スイツチングトランジスタを
含むスイツチング回路の出力にて半導体レーザに
直列接続された制御トランジスタをオフ状態に設
定する構成であるので、応答が速く、半導体レー
ザを直ちに不動作状態に設定することができる。 更に、本願考案に依れば、スイツチング回路に
含まれるスイツチングトランジスタのバイアスは
電源投入時に於いて遅れて立上る構成となつてい
る為、電源投入時に於ける誤動作も確実に防止で
きる。
[Detailed Description of the Invention] A. Field of Industrial Application The present invention relates to a protection circuit for a semiconductor laser. B. Prior Art There is a semiconductor laser drive circuit shown in FIG. 1, for example, which is configured so that the oscillation output of the semiconductor laser is constant regardless of changes in ambient temperature, deterioration of the laser itself, etc. In the figure, 1 is a semiconductor laser, 2 is a monitor photodiode, and both are housed in the same cap. As the laser output increases, the current flowing through the monitor photodiode 2 increases, and this current flows through the amplifier circuit 3.
It is converted to voltage at This is applied to the comparison circuit 4 as a comparison voltage. On the other hand, a reference voltage set by resistors R 1 , R 2 , variable resistor R 3 , Zener diode 5 and the like is applied to the other input terminal of the comparator circuit 4 . Transistor 6 is controlled based on the output of comparison circuit 4, and thus the output of semiconductor laser 1 is controlled to be constant. In addition, power supply 7
has a built-in smoothing circuit to suppress the influence of the fluctuation. Now, in such a conventional circuit, if there is an instantaneous disconnection due to poor contact or the like in the output line of the monitor photodiode, the semiconductor laser 1 will be
A current exceeding the rated value would flow, and there was a risk that the semiconductor laser 1 would be completely destroyed. The conventional circuit also includes a current limiting resistor R4 , but this alone does not provide sufficient protection. C. Purpose of the invention The present invention aims to protect a semiconductor laser using a simple circuit. D. Structure of the invention The present invention is provided with a switching circuit that opens the drive line of the semiconductor laser in response to a decrease in the output of the monitoring photodiode. E. Embodiment In this embodiment, a switching circuit 10 composed of switching transistors 8 and 9 is further provided in addition to the conventional circuit shown in FIG.
In the normal state, transistor 8 is on and transistor 9 is off. Now, when a momentary disconnection occurs in the output line of the monitor photodiode 2, the output voltage of the amplifier circuit 3 decreases significantly, and the transistor 8 is turned off. Then, the transistor 9 is turned on and the drive line of the semiconductor laser 1 is opened. That is, excessive current is prevented from flowing through the semiconductor laser 1. Furthermore, when the power is turned on, switching circuit 1
In order to prevent the transistor 0 from malfunctioning, the bias power supply for the transistor 9 is a delayed power supply 11 whose rise time is slower than that of the power supply 7. F. Effects of the invention According to the invention, a semiconductor laser can be protected from destruction due to instantaneous disconnection with a simple configuration. In addition, a device similar to the present invention is published in Utility Model Publication No. 56-23904.
It is also disclosed in the issue. In this prior art, the input side voltage of the semiconductor laser drive circuit is cut off during abnormal operation, so the response is slow due to the capacitors included in the circuit. In contrast, in the present invention, the control transistor connected in series with the semiconductor laser is set to the OFF state by the output of the switching circuit including the switching transistor, so the response is fast and the semiconductor laser can be turned off. It can be set to an inactive state immediately. Furthermore, according to the present invention, since the bias of the switching transistor included in the switching circuit is configured to rise with a delay when the power is turned on, it is possible to reliably prevent malfunctions when the power is turned on.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体レーザの駆動回路を示す
図、第2図は本考案に係る半導体レーザの保護回
路を示す図である。 1は半導体レーザ、2はモニター用フオトダイ
オード、4は比較回路、10はスイツチング回
路。
FIG. 1 is a diagram showing a conventional semiconductor laser drive circuit, and FIG. 2 is a diagram showing a semiconductor laser protection circuit according to the present invention. 1 is a semiconductor laser, 2 is a monitor photodiode, 4 is a comparison circuit, and 10 is a switching circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザと、前記半導体レーザの出力をモ
ニターする為のモニター用フオトダイオードと、
前記半導体レーザに対して直列接続され、前記モ
ニター用フオトダイオードの出力に応答して前記
半導体レーザの駆動電流を制御する制御トランジ
スタと、前記モニター用フオトダイオードの出力
の低下に応答して前記制御トランジスタをオフ状
態に設定すべく作動するスイツチングトランジス
タを含むスイツチング回路と、電源投入時に於い
て前記スイツチング回路のスイツチングトランジ
スタのバイアスの立上りを遅延させる遅延電源と
を有することを特徴とする半導体レーザの保護回
路。
a semiconductor laser; a monitoring photodiode for monitoring the output of the semiconductor laser;
a control transistor connected in series to the semiconductor laser and controlling the drive current of the semiconductor laser in response to the output of the monitor photodiode; and a control transistor in response to a decrease in the output of the monitor photodiode. A semiconductor laser comprising: a switching circuit including a switching transistor that operates to set the semiconductor laser to an OFF state; and a delay power source that delays the rise of bias of the switching transistor of the switching circuit when the power is turned on. protection circuit.
JP17622783U 1983-11-14 1983-11-14 Semiconductor laser protection circuit Granted JPS6083266U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17622783U JPS6083266U (en) 1983-11-14 1983-11-14 Semiconductor laser protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17622783U JPS6083266U (en) 1983-11-14 1983-11-14 Semiconductor laser protection circuit

Publications (2)

Publication Number Publication Date
JPS6083266U JPS6083266U (en) 1985-06-08
JPS6331413Y2 true JPS6331413Y2 (en) 1988-08-22

Family

ID=30383195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17622783U Granted JPS6083266U (en) 1983-11-14 1983-11-14 Semiconductor laser protection circuit

Country Status (1)

Country Link
JP (1) JPS6083266U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571084A (en) * 1978-11-22 1980-05-28 Mitsubishi Electric Corp Laser diode bias circuit
JPS5623904U (en) * 1979-07-31 1981-03-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5571084A (en) * 1978-11-22 1980-05-28 Mitsubishi Electric Corp Laser diode bias circuit
JPS5623904U (en) * 1979-07-31 1981-03-04

Also Published As

Publication number Publication date
JPS6083266U (en) 1985-06-08

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