JPS63310961A - Material for vacuum deposition - Google Patents
Material for vacuum depositionInfo
- Publication number
- JPS63310961A JPS63310961A JP14417787A JP14417787A JPS63310961A JP S63310961 A JPS63310961 A JP S63310961A JP 14417787 A JP14417787 A JP 14417787A JP 14417787 A JP14417787 A JP 14417787A JP S63310961 A JPS63310961 A JP S63310961A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- vacuum
- vacuum deposition
- vapor deposition
- pellets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 13
- 238000001771 vacuum deposition Methods 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 10
- 239000008188 pellet Substances 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000000843 powder Substances 0.000 abstract description 3
- 239000011863 silicon-based powder Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空蒸着により一酸化ケイ素薄膜を形成する
ための蒸着用材料に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor deposition material for forming a silicon monoxide thin film by vacuum vapor deposition.
古くから一酸化ケイ素薄膜等は、電気的、機械的あるい
は化学的に安定であるため、ＡｆＬ蒸着膜の耐摩耗性保
護膜をはじめ赤外反射防止膜、電気絶縁膜、プラスチッ
ク用反射防止膜などに広く用いられている。Since ancient times, silicon monoxide thin films and the like have been electrically, mechanically, and chemically stable, so they have been used as wear-resistant protective films such as AfL vapor-deposited films, infrared antireflection films, electrical insulation films, and antireflection films for plastics. widely used.
従来より一酸化ケイ素薄膜は、−酸化ケイ素の粉体また
は粒体を原料とし、それを蒸着し形成されている。その
粉体または粒体状の一酸化ケイ素は、金属ケイ素と二酸
化ケイ素を混合し、１４２０℃の真空炉中で反応生成さ
れた蒸気を凝縮して形成されてきた。Conventionally, silicon monoxide thin films have been formed by vapor-depositing silicon oxide powder or granules as a raw material. The powdered or granular silicon monoxide has been formed by mixing metallic silicon and silicon dioxide and condensing the vapor produced by the reaction in a vacuum furnace at 1420°C.
（発明が解決しようとする問題点］
真空蒸着の原料である上記粉体または粒体状の一酸化ケ
イ素の形成方法は、工程が複雑であり、かつ生産性が悪
く非常にコスト高になるという問題点がある。(Problems to be Solved by the Invention) The method for forming the above-mentioned powder or granular silicon monoxide, which is a raw material for vacuum evaporation, is complicated, has low productivity, and is extremely expensive. There is a problem.
本発明は上記問題点に鑑み成さりたものであり、その目
的は製造工程が簡単で生産性が良く、安価な一酸化ケイ
素薄膜蒸着用材料を提供することにある。The present invention has been made in view of the above problems, and its purpose is to provide a material for silicon monoxide thin film deposition that has a simple manufacturing process, good productivity, and is inexpensive.
（問題点を解決するための手段）
本発明の上記目的は、金属ケイ素と二酸化ケイ素を混合
し、焼結することにより製造されることを特徴とする蒸
着用材料によって達成される。(Means for Solving the Problems) The above objects of the present invention are achieved by a vapor deposition material produced by mixing metal silicon and silicon dioxide and sintering the mixture.
更に詳しくは、金属ケイ素と二酸化ケイ素を十分に混合
し、その混合物を少なくとも焼結できる程度の高温で加
熱処理してペレット状にした蒸着用材料による。したが
って、例えば混合粉末をブレス形成して焼結せしめる方
法、ホットプレスする方法、高温にて半溶融する方法な
ど各種の方法により、本発明の蒸着用材料を製造するこ
とができる。More specifically, the vapor deposition material is obtained by thoroughly mixing metallic silicon and silicon dioxide, and heating the mixture at a high enough temperature to at least sinter the mixture to form pellets. Therefore, the material for vapor deposition of the present invention can be produced by various methods, such as a method of pressing and sintering a mixed powder, a method of hot pressing, and a method of semi-melting at a high temperature.
また、単なる一酸化ケイ素薄膜を形成したい場合は、化
学式 Ｓｉ＋ ５ｉ０２ ＝ ２ＳｉＯより、金属ケイ
素と二酸化ケイ素は、そのモル比が１：１になる分量で
混合することが好ましい。Further, when it is desired to form a simple silicon monoxide thin film, it is preferable to mix metallic silicon and silicon dioxide in an amount such that the molar ratio thereof is 1:1 according to the chemical formula Si+ 5i02 = 2SiO.
本発明の蒸着用材料を使用して、例えば電子ビーム蒸着
装置などの通常の蒸着装置を用いて、通常の条件により
蒸着を行ない、先に挙げたような種々の用途に用いるの
に好適な組成および物性の一酸化ケイ素薄膜を形成する
ことができる。そのときの蒸着量Ｆ （ｇ／ｃｍ２ｓｅ
ｃ ）は、以下の式により求められる。Using the vapor deposition material of the present invention, vapor deposition is performed under normal conditions using a normal vapor deposition apparatus such as an electron beam vapor deposition apparatus, and a composition suitable for use in the various applications listed above is obtained. And a silicon monoxide thin film with physical properties can be formed. At that time, the amount of vapor deposition F (g/cm2se
c) is determined by the following formula.
Ｆ ＝ ５．８４ｘ １０−’ ｘ Ｐ ムフ了（ただ
し、Ｔ：°に、Ｍ：１グラム分子量、Ｐ ： ｔｏｒｒ
）
例えば１２００℃で蒸着を行なうと、図１に示される蒸
気圧からそれぞれの蒸発量は、
ケイ素 ３．２３ｘ １０″’ ｇ／ｃｍ２ｓ
ｅｃ−酸化ケイ素 ８．０８ｘｌＯ′４ｇ／ｃｍ２ｓｅ
ｃ二酸化ケイ素 ２．５９ｘ ｔｏ−ｓ ｇ／ｃｍ２
ｓｅｃとなり、生成される薄膜は、−酸化ケイ素９６．
５％、二酸化ケイ素３．１％、ケイ素０．４％の組成を
有する薄膜となり、−酸化ケイ素のベレットを蒸着して
生成される従来の薄膜とほぼ同等の性質を持つ薄膜が得
られる。F = 5.84x 10-' x P muffler (where T: °, M: 1 gram molecular weight, P: torr
) For example, when vapor deposition is performed at 1200°C, the amount of evaporation from the vapor pressure shown in Figure 1 is: Silicon 3.23x 10''' g/cm2s
ec-Silicon oxide 8.08xlO'4g/cm2se
c Silicon dioxide 2.59x to-s g/cm2
sec, and the thin film produced is -silicon oxide 96.
The resulting thin film has a composition of 5% silicon dioxide, 3.1% silicon dioxide, and 0.4% silicon dioxide, and has properties almost equivalent to conventional thin films produced by depositing pellets of -silicon oxide.
（実施例〕 以下、本発明を実施例により更に詳細に説明する。(Example〕 Hereinafter, the present invention will be explained in more detail with reference to Examples.
金属ケイ素粉末と二酸化ケイ素粉末を１：１のモル比で
充分混合し、４００ｋｇ ／ ｃｍｚの圧力でプレス成
形した後、アルゴンガス雰囲気中で約１３００℃、約２
時間の焼結を行なって蒸着用ベレットを得た０次いで、
真空槽の中に配置された電子ビーム蒸着用ハースにその
ペレットをセットし、装置内を真空度２×１０“３Ｐａ
となるまで排気し、さらに真空度がｌＸｌ０°２Ｐａに
なるまで酸素を導入し、３００℃に保ったガラス基板上
に光学的膜厚がｎｄ＝１２５ｎｍとなるまで蒸着した。Metallic silicon powder and silicon dioxide powder were thoroughly mixed at a molar ratio of 1:1, press-molded at a pressure of 400 kg/cmz, and then heated at about 1300℃ in an argon gas atmosphere at about 2
The pellet for deposition was obtained by sintering for a time, then
The pellets were set in an electron beam evaporation hearth placed in a vacuum chamber, and the vacuum inside the device was set to 2 x 10"3 Pa.
Oxygen was further introduced until the degree of vacuum reached 1X10°2Pa, and the film was deposited on a glass substrate kept at 300°C until the optical thickness nd was 125 nm.
形成された￥ｉＩ！２の屈折率は１．６３であったヶま
た、この膜面を紙でこすって機械的強度のテストを行な
フたところ、−酸化ケイ素ペレットを蒸着して得られた
従来の薄膜と同等の強力なものであった。Formed ¥iI! The refractive index of 2 was 1.63.We also tested the mechanical strength by rubbing the surface of this film with paper and found that it was equivalent to a conventional thin film obtained by vapor depositing silicon oxide pellets. It was a powerful thing.
（発明の効果）
以上説明してきたように、本発明の蒸着用材料によれば
、蒸着用材料自身の製造工程が簡易化されるので°、安
価な一酸化ケイ素薄膜を生産性良く製造することが可能
となった。(Effects of the Invention) As explained above, according to the vapor deposition material of the present invention, the manufacturing process of the vapor deposition material itself is simplified, so that an inexpensive silicon monoxide thin film can be manufactured with high productivity. became possible.
第１図は、ケイ素、−酸化ケイ素、二酸化ケイ素の温度
に対する蒸気圧を示す図である。FIG. 1 is a diagram showing the vapor pressure versus temperature of silicon, -silicon oxide, and silicon dioxide.
Claims (1)
り形成されることを特徴とする蒸着用材料。A vapor deposition material characterized in that it is formed by mixing metallic silicon and silicon dioxide and sintering the mixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417787A JPS63310961A (en) | 1987-06-11 | 1987-06-11 | Material for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14417787A JPS63310961A (en) | 1987-06-11 | 1987-06-11 | Material for vacuum deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63310961A true JPS63310961A (en) | 1988-12-19 |
Family
ID=15355995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14417787A Pending JPS63310961A (en) | 1987-06-11 | 1987-06-11 | Material for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63310961A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003010112A1 (en) * | 2001-07-26 | 2003-02-06 | Sumitomo Titanium Corporation | Silicon monoxide sintered product and method for production thereof |
| WO2003018506A1 (en) * | 2001-08-22 | 2003-03-06 | Sumitomo Titanium Corporation | Mixed sintered compact of silicon and silicon dioxide and method for preparation thereof |
| US7151068B2 (en) | 2002-02-22 | 2006-12-19 | Sumitomo Titanium Corporation | Sintered object of silicon monoxide and method for producing the same |
| WO2006134792A1 (en) * | 2005-06-16 | 2006-12-21 | Osaka Titanium Technologies Co., Ltd. | Silicon monoxide vapor deposition material and process for producing the same |
-
1987
- 1987-06-11 JP JP14417787A patent/JPS63310961A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003010112A1 (en) * | 2001-07-26 | 2003-02-06 | Sumitomo Titanium Corporation | Silicon monoxide sintered product and method for production thereof |
| WO2003018506A1 (en) * | 2001-08-22 | 2003-03-06 | Sumitomo Titanium Corporation | Mixed sintered compact of silicon and silicon dioxide and method for preparation thereof |
| US7151068B2 (en) | 2002-02-22 | 2006-12-19 | Sumitomo Titanium Corporation | Sintered object of silicon monoxide and method for producing the same |
| WO2006134792A1 (en) * | 2005-06-16 | 2006-12-21 | Osaka Titanium Technologies Co., Ltd. | Silicon monoxide vapor deposition material and process for producing the same |
| KR100970345B1 (en) | 2005-06-16 | 2010-07-16 | 오사카 티타늄 테크놀로지스 캄파니 리미티드 | Silicon monoxide based deposition material and method for manufacturing same |
| US8142751B2 (en) | 2005-06-16 | 2012-03-27 | Osaka Titanium Technologies Co., Ltd. | Silicon monoxide vapor deposition material and process for producing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4017319A (en) | Si3 N4 formed by nitridation of sintered silicon compact containing boron | |
| US4778778A (en) | Process for the production of sintered aluminum nitrides | |
| JPS63214342A (en) | Method for producing compounds | |
| JPS5913442B2 (en) | Manufacturing method of high purity type silicon nitride | |
| JPS63310961A (en) | Material for vacuum deposition | |
| JPS62288156A (en) | Manufacturing method of magnesia sintered body | |
| JPH0329023B2 (en) | ||
| JPS63166965A (en) | Target for vapor deposition | |
| JPH0428858A (en) | Production of vapor deposition material | |
| JP2904358B2 (en) | Manufacturing method of ITO sintered body | |
| US1337264A (en) | Process of making solid bodies from nitrids | |
| JPS61143686A (en) | Silicon carbide sintered body for heat-resistant jig having excellent dimensional accuracy | |
| WO2004048289A1 (en) | Silicon oxide sintered product for sputtering target | |
| CN116282950B (en) | A multivariate optical coating material, preparation method and application thereof | |
| JPH01219016A (en) | Production of thin superconducting ceramic film containing dispersed oxide | |
| JPS61136962A (en) | Manufacture of ceramic material from polycarbosilane | |
| JPH07278805A (en) | Production of low oxygen silicon nitride sputtering target | |
| JPH0641729A (en) | Material for vapor deposition | |
| JPH01115876A (en) | Oxidation-resistant sintered form of high strength | |
| JPH04187556A (en) | Sintered tantalum oxide, its production and use | |
| JPS61502767A (en) | Method for producing rare earth chalcogenide thin film | |
| JPS6291470A (en) | Silicon nitride sputtering target and its manufacturing method | |
| JPH07310177A (en) | Material for vapor deposition | |
| JPH07316803A (en) | Indium-tin oxide sintered compact and its production | |
| JPH06299344A (en) | Production of ito target for sputtering |