JPS63293798A - Information storage carrier - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an erasable programmable read-only memory (EP-ROM), and in particular to a laser convolution, electric readout glue-only memory suitable for high-density storage. Regarding.

[Conventional technology]

One of the most important issues in information storage is increasing capacity, and another is increasing access time.

Semiconductor memories are examples of high-speed access memories, which have a high-speed access time of 100 nsec, but have a storage capacity of 1 Mbit at most.

- 10,000, large capacity memory, c has original disk memory,
The storage capacity is large, ranging from several 100MB to 1GB,
The access time is slow at several 100 m5ec.

The former has a limit to increasing capacity because the semiconductor element memory circuit is too thick and cannot be made high density, while the latter can achieve high density due to the laser beam spot diameter of the casing, but due to the laser source of the disk, Access time is limited.

[Problems addressed by the invention] The above-mentioned conventional technology has a problem in that it is difficult to achieve both high-speed access and large capacity.

An object of the present invention is to provide a large capacity erasable programmable read-only memory that can be accessed at high speed.

[Means for solving problems]

The above purpose is achieved by using a polarizable material with one layer in the memory layer, or by using a common electrode on the i-plate.

forming a first memory layer, an X-direction pattern of matrix electrodes, a second memory layer, and a Y-direction pattern of matrix electrodes in this order, and applying a voltage to one of the matrix electrodes having a common electrode and an electrical address section; An optical tracking section and an optical addressing section are provided along the electrode pattern to intersect with the electrode. This is accomplished by moving a laser beam spot to a desired point and heating it.

[Effect]

While applying a positive voltage to the common electrode and a negative voltage to the matrix electrode, a laser beam spot is irradiated aiming at the desired cross point of the matrix electrode and that area is heated. Ions, such as N, become movable due to the high temperature, and according to the electric field, the matrix electrode parts, ie, the second memo IJ hr
K moves and precipitates.

The area that is not irradiated with the laser beam spot is at room temperature and no movement of ions occurs and no precipitation occurs. With the above steps, the honoring operation is completed. ★In order to irradiate the laser beam spot to a desired cross point of the matrix electrode during insertion, an optical address, an optical tracking unit, and an electrical address are used. If a voltage is applied between the Y-direction pattern of the matrix electrode and the common electrode, for example, the optical phase for tracking the laser beam along the X; 5-direction pattern. In addition, optical addresses are provided for each row of the X-direction pattern using, for example, uneven phase bits, and electrical addresses are provided for the Y-direction pattern. Here, a diode matrix, a TFT array, etc. can be used for the electrical address. To detect the position of the laser beam, the optical address is read while scanning the °C laser beam spot along the guide groove, and the position in the Y direction is detected.
M) The position in the X direction is detected by detecting the reflectance and noise at the intersection of the IJ electrodes. Data convolution selects an electrode in the X direction using an optical address in the X direction, scans the laser spot in the X direction, selects an electrode in the Y direction by using an electrical address Yt, applies a voltage, and scans the laser spot while scanning the laser spot. While detecting the position in the X direction using the method described above, when the position coincides with the voltage application electrode position, the power of the laser beam is changed to the power of the laser beam, thereby heating the cough point.

For partial erasing, it is good to reverse the electric field and irradiate the laser beam spot in the same way as in the above-mentioned method. In addition, it is not necessary to use a laser beam to erase the entire surface; instead, it is possible to erase the entire surface by reversing the electric field.
This can be achieved by iC by placing the information storage carrier in a heating tank and heating the entire surface.

For reading, the matrix is electrically scanned by providing an electrical address YX')5 in the same electrode pattern and in the Y direction electrode pattern, and
Depending on the presence or absence of conduction between the direction electrodes, the data changes to °0° and °1”.
Determine.

〔Example〕

Embodiment 1 An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

FIG. 1 is a schematic plan view, and FIG. 2 is a partial sectional view schematically showing the state of machining and laser shaving shown in FIG. 1. A common electrode 2 was formed by steaming 41 on a glass substrate 1 having optical addresses 13 and 15' consisting of uneven phase pits and a guide groove 14. Furthermore, soda lime glass containing metal ions was sputtered and shaped into a thin film.
The memory layer 5 was formed into a thin film. One end of the memory layer 3 was removed by ion beam etching so that the common electrode 2 was exposed.

X for forming memory cell 99''k on memory layer 5
The matrix electrode 5 in the direction was formed using A-Fuku 1 and photolithographic technology. Next, a second memory layer (soda lime glass) 4 is formed as a thin film by sputtering on the matrix pole 5, and the matrix is lifted off and removed until the pole 5 exits. A matrix electrode in the Y direction was formed on the substrate by evaporation of A1 and 7 otolithographic techniques. 10#10' is evening'
This is an electrical address using an iode matrix, and an insulating layer and through holes are formed using the 7 otolithography technique on the memory cell matrix on top of the 5th and 7th poles.

An amorphous SL layer, a slot hole, and an address pattern were formed. it, 11' is the electrical address input terminal of the element. ,! In addition to a diode matrix, TPT arrays can also be used for physical addressing.

The optical address 15.13'joi paralysis guide #I was formed directly on the glass substrate using photolithographic ink technology, but it was formed using a resin such as acrylic using an original disk process such as glass master disk-stamper injection molding. Optical address guides and guide grooves can also be formed on the substrate.

While applying the voltage E12 between the common X pole 2 and the IJ electrode 7,
The laser source is focused through a half mirror 17 and an objective lens 18 at a temperature of 0.degree. C., and is irradiated onto the memory cell section. The memory cell S is heated to a high temperature, and the ions in the memory l@5, 4A become movable due to the high temperature, and move between the matrix electrode 5 and the matrix electrode 7, forming a conductive band 21Y. Since there is no ion movement in the area that is not heated by the laser, it remains non-conductive.

For erasing, an electric field is applied in the opposite direction and the ions are moved between the matrix electrode 5 and the common electrode 2, and the conduction between the matrix electrodes 5 and 7 is eliminated.

In order to accurately irradiate the laser beam onto the memory cell section and inject data into it, the position of the memory cell section must be detected scientifically, and the convolution 11L signal of It is necessary to synchronize the heating signals. In this embodiment, the optical address 15 and the guide groove 14 are distributed along the matrix electrode 5 in the X direction. The laser beam from the semiconductor laser 15 is transmitted through a magnifying lens 16° half mirror 17,
Through the objective lens 18'lt, the storage carrier is irradiated, and the reflected light is reflected by the objective lens 1B, /--7 mirror 17. The focusing lens 19'lt passes through the °C detection element 20, for example, a photodiode, and the signal from the CC detection detection element performs laser beam focusing and tracking to the guide groove, as well as optical addressing (objective). The lens actuator and laser beam scanning mechanism are not shown).

For example, for the X-direction matrix electrode 5, FIG. 5 shows the detection signal of the detection element when the laser beam is scanned from left to right in the above method at the first temperature. The position in the Y direction is detected by detecting the optical address signal, and since a matrix crossing signal can be detected each time the matrix is crossed in the Y direction, the position in the X direction is detected by counting the crossing signals. Therefore, when writing data,
The electrodes of the matrix in the X direction are detected by the optical address, and the matrix electrodes in the Y direction are detected by the matrix crossing signal while scanning the laser beam in the X direction. Data writing is performed by applying a voltage to the matrix electrode and simultaneously setting the power of one beam as the writing power.

To write across the entire memory cell.

Laser beam along the X-direction matrix electrode? scan,
This is achieved by performing a track jump when reaching the end of the electrode, moving the laser beam to the adjacent X';5 matrix, and scanning the laser beam in the opposite direction.

Example 2 In the above example, the IJ electrode is made of a high reflectance material. 415 is used, the matrix crossing signal is detected when the amount of detected light is large. As shown in FIG. 3, in this case, the optical address and the matrix crossing signal have detection levels in the same direction.

Separation of the optical address and matrix inspection No. 6 becomes complicated. Furthermore, since a high reflectance reduces the heating effect of the laser beam, it is desirable that the reflectance of the memory cell portion be as low as possible. Another embodiment of the invention is shown in FIG. In this embodiment, the mask electrode 7 in the Y direction is made of a thin film with a relatively thick transmittance r, and the memory layer 4
By setting the optical film thickness d1 to λ to −×9 with respect to the laser source, the original interference effect l is utilized to reduce the reflectance of the memory cell portion. The other configurations of 7 are the same as 1. Here, λ is the wavelength of the convolution laser source, and 9 is an integer. Honto Example Detection 1
1! Figure 5 shows the r level. The optical address and matrix crossing signal are in opposite directions as shown in the figure, making it easy to separate the signals. As a more suitable example for next week, the optical λ film thickness d, -x? By setting L, not only the reflectance of the memory cell part is reduced by utilizing the interference effect of one element, but also the IJ electrode 5 is made to be optically transparent, and the The source effectively acts on the memory layers 4 and 6, and the writing sensitivity can be further improved.

In the above embodiment, in addition to TL, T4. H.L., 56. S4. Pljr
, In, (, b, etc.) can be used.

Example 6 In the above Example 2vc, the film thickness was 50 to several hundred nm in order to give the matrix electrode 7 light transmittance and light reflectivity.
Therefore, a transparent conductive film 20 such as I'l'0 was formed on the top of the matrix electrode 7. As a result, the resistance value of the electrode was reduced, and readout errors were reduced (Figure 6).

Embodiment 4 Another implementation of optical addressing will be explained using FIG. 7. The @ of the matrix electrode in the X direction was changed according to the address signal as shown in the figure. In order to obtain an effective detection signal from the primary address 21, it is necessary for the VC to have a large change in electrode width and a large change in reflectance.
matrix electrode.

Since it is used for electrical readout, it is necessary to ensure sufficient conductivity, and in order to satisfy both requirements, it is preferable to adopt an optical address configuration as shown in FIG.

Furthermore, in order to further improve the properties of 4, it is also effective to provide a transparent conductive layer such as ITO on the optical address.

Finally, the operation of the information storage carrier according to the present invention during reproduction will be explained with reference to FIG. No 8 figure is 8 x 8 =
FIG. 3 is a pattern diagram showing an example of a 6-bit memory. In this case, the optical address and guide groove were omitted.

9 is an 8×8 memory cell portion, and marks indicate bits written by laser. 10°10' is an electrical address using a diode matrix, and the circle mark is a diode connection point. Address bit A. ~A and K specify one of the matrix electrodes 2, and h@ ”-A
One of the eli matrix electrodes 7 is designated as I.

Terminal 8 is connected to +V level, that is, "1" level.
Only when a laser-written memory cell is specified, terminal 6 becomes +V level 1" and the memory can be removed.

As described above, the memory size can be reduced to the diameter of the laser spot, the structure of the memory cell is simple, and a high-density, large-capacity erasable programmable ROM can be produced.

For the memory layer, in addition to glass, medium-rate materials such as nylon containing metal ions, polyimide, or copper phthalocyanine can be used.

〔Effect of the invention〕

According to the present invention, a high-performance erasable memory cell can be constructed with a simple configuration, so that a large-capacity, high-speed access erasable programmable ROM using laser convolution and electrical readout can be provided.

[Brief explanation of drawings]

FIG. 1 is a schematic plan view of one embodiment of the present invention, and FIG. 2 is a schematic plan view of an embodiment of the present invention.
Partial cross-sectional view and laser-written letter! F1i, FIG. 5 is a characteristic diagram of the detection signal, FIG. 4 is a partial sectional view showing another embodiment of the present invention, FIG. 5 is a characteristic diagram of the detection signal, and FIG. 6 is a characteristic diagram of the present invention. 7 is a partial plan view of another embodiment of the present invention, and FIG. 8 is a partial sectional view of another embodiment of the present invention.
Tas pattern factor 1... board, 2...
・Common electrode, 5.4...Memory layer, 10...
Demonic address, 16...optical address.

Claims (1)

[Claims] 1. In an information storage carrier that electrically and optically stores information and electrically reproduces information, the information storage section is composed of three electrodes and a memory film provided between the electrodes, and the memory film is It is a polarizable substance that contains ions, and while the information storage section is heated by light irradiation such as a laser beam, an electric field is applied to both ends of the three electrodes to polarize the ions in the memory film to the middle electrode and one end electrode. ions are collected between the two electrodes, smoothed the conduction between the two electrodes, memorized the information electrically and optically, electrically reproduced the information depending on the presence or absence of the conduction between the two electrodes, and heated the ions by reversing the electric field. The information storage section is configured such that information can be erased by shifting the information between the intermediate electrode and the other end electrode, and an optical address section and a heating storage section are configured to select the heating storage section when storing information. An information storage carrier comprising an optical tracking section for scanning and an electrical addressing section for electrically reproducing information.