JPS63282261A - Sputtering device - Google Patents

Abstract

PURPOSE:To prevent the generation of dust and to improve the operation rate of the title device by providing a shielding plate on the whole side of a space between the target and semiconductor wafer in a sputtering chamber. CONSTITUTION:A target 2 held on a support 3 and used for sputtering a metal atom and a wafer stage 4 held on a support 5 and used for holding a semiconductor wafer 10 are arranged in the sputtering chamber 1. The metal atom from the target 2 is deposition on the semiconductor wafer 10 to form a thin metal film. In such a sputtering device, the cylindrical shielding plate 6 is provided to cover the periphery of the support 3, the periphery of the target 2, the whole side of the space between the target 2 and the semiconductor wafer 10, and the whole periphery of the wafer stage 4 with a gap of about 1-2mm in between. By this method, the splashing of the metal atom to the outside of the space between the target 2 and the semiconductor wafer 10 can be controlled to a minimum.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus in a thin film forming apparatus that scatters metal atoms from a target to form a metal thin film on a semiconductor wafer.

[Conventional technology]

Conventionally, this type of sputtering apparatus, as shown in FIG.
A sputtering chamber 1 that maintains a predetermined degree of vacuum, a target 2 provided in this sputtering chamber 1 and held by a target support 3 to scatter metal atoms, and a surrounding area of this target 2 excluding the surface on which metal atoms are scattered. a target shield plate 8 for covering the semiconductor wafer 10; a wafer stage 4 for holding the semiconductor wafer 10 and forming a metal thin film on the semiconductor wafer 10;
The structure includes a wafer shield plate 9 for preventing the wafer from scattering to the outer periphery of the wafer, and a stage support 5 for supporting the wafer stage 4.

[Problem that the invention seeks to solve]

In the conventional sputtering apparatus described above, only the periphery of the target 2 and the semiconductor wafer 10 are covered with shield plates, and the space between them is open, so that the metal atoms scattered from the target 2 are There are problems in that it adheres to the side walls of the sputtering chamber 1 and causes dust, and that it becomes difficult to inspect and clean the sputtering apparatus, reducing the operating rate.

The purpose of the present invention is to minimize the scattering of metal atoms from the target to the outside of the space between the target and the semiconductor wafer, prevent the generation of dust, facilitate inspection and cleaning, and improve the operating rate. The object of the present invention is to provide a sputtering apparatus that can be improved.

[Means for solving problems]

The sputtering apparatus of the present invention includes a target provided in a sputtering chamber for scattering metal atoms, and a semiconductor wafer that is held, and metal atoms from the target are deposited on the semiconductor wafer to form a metal thin film. The device includes a wafer stage and a shield plate provided on the entire side surface of at least the space between the target and the semiconductor wafer so that metal atoms from the target are not scattered around.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a partially sectional side view showing a first embodiment of the present invention.

This embodiment includes a target 2 which is provided in a vacuum cleaner 1 that maintains a predetermined degree of vacuum, is held by a target support 3, and scatters metal atoms, and a semiconductor wafer 10 is held and metal atoms are deposited on the semiconductor wafer 110. A wafer stage 4 on which a thin metal film is deposited, a stage support 5 that supports this wafer stage 4, and a space between the target 2 and the semiconductor wafer 10 to prevent metal atoms from the target 2 from scattering to the surroundings. The entire side surface of and the target support 3. The structure includes a shield plate 6 provided around the target 2 and the wafer stage, and a shield plate support 7 that supports the shield plate 6.

In FIG. 1, the area around the target support 3, the area around the target 2, the entire side of the space between the target 2 and the semiconductor wafer 10 at a distance of 7 to 8 CIIl, and the area around the wafer stage 4 are all covered with a gap of about 1 to 21 m. By providing a covering cylindrical shield plate 6 with a thickness of 5 to 10+a+a, scattering of metal atoms to the outside of the space between the target 2 and the semiconductor wafer 10 can be minimized. This makes it easy to clean the interior of the sputtering chamber 1, and the labor required can be significantly reduced.

In addition, by making the shield plate 6 removable, inspection inside the sputter chamber 1 becomes easier, and most of the cleaning inside the sputter chamber 1 can be completed by simply replacing the shield plate 6, which increases the operating efficiency of the sputtering equipment. will be significantly improved.

FIG. 2 is a partially sectional side view showing a second embodiment of the invention.

This embodiment differs from the first embodiment in that a target shield plate 8 covers the target 2 and the target support 3, and a target 2 and semiconductor wafer.
It is located at a point separated from the shield plate 6a that covers the entire side surface of the space between the sputtering chamber 1 and the sputter chamber 1.
This has the advantage that cleaning becomes easier and attachment and detachment of the shield plate 6a becomes easier.

〔Effect of the invention〕

As explained above, the present invention has a structure in which at least the entire side surface of the space between the target and the semiconductor wafer is covered with a shield plate, so that metal atoms from the target are directed to the outside of the space between the target and the semiconductor wafer. This has the effect of minimizing scattering, preventing the generation of dust in the sputtering chamber, facilitating inspection and cleaning, and improving the operating rate of the sputtering apparatus.

[Brief explanation of drawings]

FIG. 1 is a partially sectional side view showing a first embodiment of the present invention;
FIG. 2 is a partially sectional side view showing a second embodiment of the present invention;
FIG. 3 is a partially sectional side view showing an example of a conventional sputtering apparatus. 1... Sputter chamber, 2... Target, 3
...Target support, 4...Wafer stage, 5
...Stage support, 6, 6a...Shield plate, 7.
...Shield plate support, 8...Target shield plate,
9... Wafer shield plate, 10... Semiconductor wafer. Agent Patent Attorney Susumu Uchihara 7th Iv...l Yu+Yawanomer Figure 1 21 ¥ll

Claims (1)

[Claims] A target provided in a sputtering chamber for scattering metal atoms; a wafer stage that holds a semiconductor wafer and deposits metal atoms from the target onto the semiconductor wafer to form a metal thin film; 1. A sputtering apparatus comprising a shield plate provided at least on the entire side surface of a space between the target and the semiconductor wafer to prevent metal atoms from scattering to the surrounding area.