JPS63266846A - Electronic device manufacturing method and device - Google Patents
Electronic device manufacturing method and deviceInfo
- Publication number
- JPS63266846A JPS63266846A JP62099872A JP9987287A JPS63266846A JP S63266846 A JPS63266846 A JP S63266846A JP 62099872 A JP62099872 A JP 62099872A JP 9987287 A JP9987287 A JP 9987287A JP S63266846 A JPS63266846 A JP S63266846A
- Authority
- JP
- Japan
- Prior art keywords
- reducing gas
- gas
- bonding
- workpiece
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims abstract description 91
- 239000011261 inert gas Substances 0.000 claims abstract description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 6
- 238000007865 diluting Methods 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 239000008188 pellet Substances 0.000 abstract description 17
- 238000002485 combustion reaction Methods 0.000 abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 239000012530 fluid Substances 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000004804 winding Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 3
- 238000003909 pattern recognition Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004836 empirical method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012840 feeding operation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/78268—Discharge electrode
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- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
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- H01L2224/85054—Composition of the atmosphere
- H01L2224/85065—Composition of the atmosphere being reducing
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- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子装置の製造技術、特に、ワイヤボンディ
ング技術に関し、例えば、半導体装置の製造工程におい
て、ペレットとリードとを電気的に接続するのに利用し
て有効な技術に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to electronic device manufacturing technology, particularly wire bonding technology, for example, to electrically connect pellets and leads in the manufacturing process of semiconductor devices. Concerning techniques that can be used effectively.
半導体装置の製造工程において、ペレットとリードを電
気的に接続するワイヤボンディング装置として、ワイヤ
の先端に放電アークを利用してボ−ルを熔融形成し、こ
のボールをペレットのボンディングパッドに熱圧着して
第１ボンディングを実施した後、ワイヤを引き出してそ
の中間部をインナリード上に熱圧着して第２ボンディン
グを実施することにより、ワイヤの接続を行うようにし
たワイヤボンディング装置であって、ペレットが搭載さ
れた被加工物としてのリードフレームの周囲に還元性ガ
スを供給することにより、その雰囲気を還元性ガス雰囲
気に保持するように構成されているものがある。In the manufacturing process of semiconductor devices, wire bonding equipment is used to electrically connect pellets and leads by melting and forming a ball at the tip of the wire using a discharge arc, and then thermocompression bonding the ball to the bonding pad of the pellet. This wire bonding device connects wires by performing first bonding on the inner lead, then pulling out the wire, thermocompressing the intermediate part onto the inner lead, and performing second bonding. Some devices are configured to maintain a reducing gas atmosphere by supplying a reducing gas around a lead frame as a workpiece on which a lead frame is mounted.
なお、ワイヤボンディング装置を述べである例としては
、特開昭５Ｅｌ−１６９９１８号公報がある。An example of a wire bonding device is disclosed in Japanese Patent Laid-Open No. 5El-169918.
しかし、このようなワイヤボンディング装置においては
、リードフレームの周囲に供給された還元性ガスが大気
と混合した場合、ボール形成時の放電アーク等を着火源
として燃焼することがあり、燃焼した際にボンディング
条件が変化するため、ボンダビリティ−が不安定になる
という問題点があることが、本発明者によって明らかに
された。However, in such wire bonding equipment, if the reducing gas supplied around the lead frame mixes with the atmosphere, it may combust using the discharge arc during ball formation as an ignition source. The inventor of the present invention has revealed that there is a problem in that bondability becomes unstable due to changes in bonding conditions.
本発明の目的は、還元性ガスの燃焼による加工精度の不
安定化を防止することができる電子装置の製造技術を提
供することにある。An object of the present invention is to provide a technology for manufacturing electronic devices that can prevent instability of processing accuracy due to combustion of reducing gas.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を説明すれば、次の通りである。An overview of typical inventions disclosed in this application is as follows.
すなわち、被加工物の周囲に還元性ガスを供給すること
により、還元性ガス雰囲気を形成する還元性ガス供給手
段を備えている電子装置の製造装置において、前記被加
工物の周囲を通過した還元性ガスに不活性ガスを供給す
ることにより、可燃条件範囲外に希釈させる不活性ガス
供給手段を設けたものである。That is, in an electronic device manufacturing apparatus that is equipped with a reducing gas supply means that forms a reducing gas atmosphere by supplying a reducing gas around a workpiece, the reducing gas that has passed around the workpiece An inert gas supply means is provided for diluting the flammable gas to outside the flammable condition range by supplying an inert gas to the flammable gas.
一般に、被加工物酸化防止用還元性ガスは１０％程度の
可燃性ガスを含んでいるため、大気中の酸素に接触する
ことにより、その近傍の加熱源または放電アーク等を火
種として着火し自然燃焼することがある。そして、外部
で水素の燃焼が発生すると、被加工物の酸化等は起きな
いとしても、温度環境の変動や所謂陽炎等のような加工
条件の変動により、加工安定性の低下が発生する。In general, reducing gas for preventing oxidation of workpieces contains about 10% flammable gas, so when it comes into contact with oxygen in the atmosphere, it ignites naturally using a nearby heating source or discharge arc as a ignition source. May combust. When combustion of hydrogen occurs externally, even if the workpiece is not oxidized, processing stability deteriorates due to fluctuations in the temperature environment and processing conditions such as so-called heat haze.
しかし、前記した手段によれば、逃散した還元性ガスは
不活性ガスにより可燃条件範囲外に希釈されるため、還
元性ガス中の水素が燃焼することは防止され、その結果
、加工安定性の低下は防止されることになる。However, according to the above-mentioned means, the escaping reducing gas is diluted by the inert gas to a level outside the flammable condition range, so hydrogen in the reducing gas is prevented from burning, and as a result, processing stability is reduced. The decline will be prevented.
第１図は本発明の一実施例であるワイヤボンディング装
置を示す正面図、第２図はその要部の拡大部分正面図で
ある。FIG. 1 is a front view showing a wire bonding apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged partial front view of the main parts thereof.
本実施例において、電子装置の製造装置としてのワイヤ
ボンディング装置は電子装置としての半導体装置１にお
けるペレット２の電極パッドとリードフレーム３のリー
ド４とにワイヤ５をそれぞれボンディングすることによ
り、ペレット２と各リード４とを電気的に接続するよう
構成されている。したがって、本実施例において、ペレ
ット２が搭載されているリードフレーム３は被加工物を
実質的に構成している。In this embodiment, the wire bonding apparatus as an electronic device manufacturing device bonds the pellet 2 and the wire 5 to the electrode pad of the pellet 2 and the lead 4 of the lead frame 3 in the semiconductor device 1 as the electronic device. It is configured to electrically connect each lead 4. Therefore, in this example, the lead frame 3 on which the pellets 2 are mounted substantially constitutes the workpiece.
このワイヤボンディング装置はフィーダ６を備えており
、フィーダ６にはヒートブロック７がリードフレーム３
を加熱し得るように設備されている。フィーダ６のボン
ディングステージの外部にはＸＹテーブル８がＸＹ方向
に移動し得るように設備されており、ＸＹテーブル８上
にはボンディングヘッド９が搭載されている。ボンディ
ングヘッド９にはボンディングアーム１０が基端を回転
自在に軸支されて支持されており、このアーム１０はそ
の先端に固設されたキャピラリー１１を上下動させるべ
く、カム機構（図示せず）により駆動されるように構成
されている。また、ボンディングヘッド９にはボンディ
ングアーム１０を通してキャピラリー１１を超音波振動
させる超音波発振装置（図示せず）が設備されている。This wire bonding apparatus is equipped with a feeder 6 in which a heat block 7 is attached to a lead frame 3.
It is equipped to heat the An XY table 8 is installed outside the bonding stage of the feeder 6 so as to be movable in the XY directions, and a bonding head 9 is mounted on the XY table 8. A bonding arm 10 is rotatably supported at its base end by the bonding head 9, and this arm 10 is equipped with a cam mechanism (not shown) in order to vertically move a capillary 11 fixed to its tip. It is configured to be driven by. Further, the bonding head 9 is equipped with an ultrasonic oscillator (not shown) that ultrasonically vibrates the capillary 11 through the bonding arm 10.
ボンディングアーム１０の上側には一対のクランバアー
ム１２．１３が電磁プランジャ機構等のような適当な手
段（図示せず）により作動されるように設備されており
、両アーム１２．１３の各先端はキャピラリー１１の真
上位置に配されてクランパ１４を構成している。クラン
パ１４にはリール（図示せず）から繰り出される銅ワイ
ヤ５がガイド１５を介して挿通されており、ワイヤ５は
さらにキャピラリー１１に挿通されている。On the upper side of the bonding arm 10, a pair of clumber arms 12.13 are installed to be actuated by suitable means (not shown) such as an electromagnetic plunger mechanism, and each tip of both arms 12.13 is connected to a capillary. A clamper 14 is arranged directly above the clamper 11. A copper wire 5 fed out from a reel (not shown) is inserted into the clamper 14 via a guide 15, and the wire 5 is further inserted into a capillary 11.
キャピラリー１１の近傍には放電電極１６が独立して設
備されており、この電極１６ばその上端部が回転自在に
軸支されることにより、その先端部がキャピラリー１１
の下方位置、すなわち、ワイヤ５の先端の真下位置と、
キャピラリー１１の側方位置（退避位置）との間を移動
されるように構成されている。また、この電極１６と前
記クランパ１４との間には電源回路Ｉ７が接続されてお
り、電極１６とワイヤ５の間で放電アークを生成させる
ようになっている。A discharge electrode 16 is installed independently in the vicinity of the capillary 11, and the upper end of this electrode 16 is rotatably supported, so that its tip is connected to the capillary 11.
, i.e., directly below the tip of the wire 5,
It is configured to be moved between a side position (retreat position) of the capillary 11 and a side position (retracted position). Further, a power supply circuit I7 is connected between the electrode 16 and the clamper 14, and a discharge arc is generated between the electrode 16 and the wire 5.
このワイヤボンディング装置は、ワイヤ５の先端で生成
されるボールの周囲にガスを供給することにより、ガス
雰囲気を形成するためのチューブ１８を備えており、こ
のガス供給手段としてのチューブ１８は放電電極１６に
チューブ開口部をキャピラリー１１の下方位置に向けて
取り（−１けられている。チューブ１８には還元作用の
あるガス、例えば、アルゴンガスと水素ガスとの混合ガ
ス等を供給するためのガス供給ユニット１９が接続され
ており、チューブ］８の内部にはガス加熱手段としての
ヒータ２０が絶縁テープを挟設されて挿入されている。This wire bonding device includes a tube 18 for forming a gas atmosphere by supplying gas around the ball generated at the tip of the wire 5, and the tube 18 as a gas supply means is used as a discharge electrode. The tube 16 has a tube opening facing the lower position of the capillary 11 (-1 is marked). A gas supply unit 19 is connected, and a heater 20 as gas heating means is inserted into the tube 8 with an insulating tape interposed therebetween.
このヒータ２０ばガス供給ユニット１９から供給された
還元性ガス（以下、ボール生成用ガスという。）２１を
チューブ１８とヒートブロック２０との隙間を通過する
際に加熱することにより、所定の温度に制御し得るよう
に構成されている。The heater 20 heats the reducing gas (hereinafter referred to as ball-generating gas) 21 supplied from the gas supply unit 19 as it passes through the gap between the tube 18 and the heat block 20 to a predetermined temperature. It is configured to be controllable.
一方、フィーダ６の底部には、リードフレーム３の酸化
を防止するための還元性ガス（以下、リードフレーム酸
化防止用ガスという。）２２をイハ給する手段としての
還元性ガス供給装置２３が設備されており、この供給装
置２３は吹出口２４を備えている。吹出口２４はリード
フレーム３の周囲にリードフレーム酸化防止用ガス２２
を緩やかに吹き出し得るように、フィーダ６の上面に複
数個開設されており、この吹出口２４群にはガス供給路
２５が接続されている。ガス供給路２５はガス供給ユニ
ット２６に接続されており、ガス供給ユニット２６は還
元性ガス、例えば、９０％の窒素および１０％の水素か
ら成る混合ガスを、予め設定された流量をもって供給し
得るように構成されている。On the other hand, a reducing gas supply device 23 is installed at the bottom of the feeder 6 as a means for supplying a reducing gas (hereinafter referred to as lead frame oxidation prevention gas) 22 to prevent oxidation of the lead frame 3. This supply device 23 is equipped with an air outlet 24. The air outlet 24 is provided with a lead frame oxidation prevention gas 22 around the lead frame 3.
A plurality of gas outlets are provided on the upper surface of the feeder 6 so that the gas can be gently blown out, and a gas supply path 25 is connected to the group of 24 outlets. The gas supply line 25 is connected to a gas supply unit 26, which can supply a reducing gas, for example a mixed gas consisting of 90% nitrogen and 10% hydrogen, at a preset flow rate. It is configured as follows.
そして、フィーダ６上にはカバー２７がフィーダ６を送
られるリードフレーム３を略全体にわたって被覆するよ
うに設備されており、このカバー２７はり−ドフレーム
３の周囲に供給された酸化防止用ガス２２をリードフレ
ーム３の周囲に可及的に停滞させるようになっている。A cover 27 is installed on the feeder 6 so as to cover almost the entire lead frame 3 to which the feeder 6 is fed. is made to stagnate around the lead frame 3 as much as possible.
カバー２７には窓孔２８がキャピラリー１】の真下にお
けるボンディングステージとなる位置に配されて、ワイ
ヤボンディングを実施し得る大きさの略正方形形状に開
設されている。この窓孔２８には略正方形枠形状に形成
されたリードフレーム押さえ具２９が昇降自在に嵌合さ
れており、この押さえ具２９はカム機構等のような適当
な駆動装置（図示せず）によりフィーダ６の間欠送り作
動に連携して」二下動するように構成されている。すな
わち、この押さえ具２９はワイヤボンディングが実施さ
れる時にリードフレーム３を上から押さえることにより
、リードフレーム３の遊動を防止するように構成されて
いる。A window hole 28 is provided in the cover 27 at a position that will serve as a bonding stage directly below the capillary 1, and is opened in a substantially square shape large enough to perform wire bonding. A lead frame presser 29 formed in a substantially square frame shape is fitted into this window hole 28 so as to be able to rise and fall freely, and this presser 29 is driven by a suitable drive device (not shown) such as a cam mechanism or the like. It is configured to move downward in conjunction with the intermittent feeding operation of the feeder 6. That is, this presser 29 is configured to prevent the lead frame 3 from moving by pressing it from above when wire bonding is performed.
カバー２７上には不活性ガスを供給する手段としての不
活性ガス供給装置３１が、窓孔２８上にエアカーテン状
のガス流を形成し得るように設備されている。すなわち
、この供給装置３１はガスを吹き出すノズル３２を備え
ており、ノズル３２は押さえ具２９上にこれと連動して
上下動し得るように固設されている。このノズル３２に
は複数個の吹出口３３がガスを緩やかに吹き出してエア
カーテン状の流れを形成し得るように開設されている。An inert gas supply device 31 serving as a means for supplying inert gas is installed on the cover 27 so as to form an air curtain-like gas flow over the window hole 28 . That is, this supply device 31 includes a nozzle 32 for blowing out gas, and the nozzle 32 is fixedly installed on the presser 29 so as to be able to move up and down in conjunction with the presser. This nozzle 32 is provided with a plurality of blow-off ports 33 so as to gently blow out gas to form an air curtain-like flow.
他方、このノズル３２にはガス供給ユニット３４が接続
されており、このユニット３４は不活性ガス、例えば窒
素ガスを、窓孔２８から逃散して来る酸化防止用還元性
ガス２２の濃度を可燃条件範囲外に希釈させる流量供給
し得るように構成されている。On the other hand, a gas supply unit 34 is connected to this nozzle 32, and this unit 34 supplies an inert gas, such as nitrogen gas, to the concentration of the antioxidant reducing gas 22 escaping from the window hole 28 under combustible conditions. It is configured to be able to supply a flow rate that causes dilution outside the range.
次に、前記構成にかかるワイヤボンディング装置による
本発明の一実施例であるワイヤボンディング方法を説明
する。Next, a wire bonding method according to an embodiment of the present invention using the wire bonding apparatus having the above configuration will be described.
ペレット２がボンディングされている被加工物としての
リードフレーム３がフィーダ６により間欠送りされて、
ワイヤボンディングすべきペレット２の部分がフィーダ
６上におけるボンディングステージに供給されると、窓
孔２８内においてリードフレーム押さえ具２９が下降さ
れてリードフレーム３を押さえつける。続いて、ＸＹテ
ーブル８が後述するようなボンディング作動を繰り返す
ように適宜移動される。A lead frame 3 as a workpiece to which pellets 2 are bonded is intermittently fed by a feeder 6,
When the portion of the pellet 2 to be wire-bonded is supplied to the bonding stage on the feeder 6, the lead frame presser 29 is lowered within the window hole 28 and presses the lead frame 3. Subsequently, the XY table 8 is moved as appropriate to repeat the bonding operation as described below.
一方、キャピラリー１１においては、放電電極１６が銅
ワイヤ５の下端に接近されて電源回路１７が閉じられる
ことにより、銅ワイヤ５の先端にボール５ａが溶融形成
される。このとき、チューブ１８から還元性ガス２１が
供給され、ワイヤ５と電極１６との間が還元性ガス雰囲
気に保持される。この還元性ガス２１はチューブ１８の
内部の途中に介設されているヒータ２０により所定温度
になるように加熱制御されるため、ガス雰囲気は所定の
温度範囲内になり、ワイヤ５の先端に形成されるボール
５ａの温度の低下が防止される。その結果、還元性ガス
２１が熔融したボール５ａに吹き付けられても、ボール
５ａの硬度が低下することはない。On the other hand, in the capillary 11, the discharge electrode 16 is brought close to the lower end of the copper wire 5 and the power supply circuit 17 is closed, whereby a ball 5a is melted and formed at the tip of the copper wire 5. At this time, reducing gas 21 is supplied from tube 18, and a reducing gas atmosphere is maintained between wire 5 and electrode 16. This reducing gas 21 is heated and controlled to a predetermined temperature by a heater 20 interposed midway inside the tube 18, so that the gas atmosphere is within a predetermined temperature range and is formed at the tip of the wire 5. This prevents the temperature of the ball 5a from decreasing. As a result, even if the reducing gas 21 is blown onto the molten ball 5a, the hardness of the ball 5a does not decrease.
続いて、キャピラリー１１がボンディングヘッド９によ
り下降されてワイヤ５の先端部に形成されたボール５ａ
をペレット２のパッドに徐々に押着させる。このとき、
ペレット２がヒートブロック７によって加熱されている
ため、ボール５ａはペレット２のパッド上に熱圧着され
る。そして、ボール５ａはガス雰囲気を所定の温度範囲
に保たれることにより、硬くなることを抑制されている
ため、良好なボンダビリティ−をもって熱圧着されるこ
とになる。Subsequently, the capillary 11 is lowered by the bonding head 9 to release the ball 5a formed at the tip of the wire 5.
is gradually pressed onto the pad of pellet 2. At this time,
Since the pellet 2 is heated by the heat block 7, the ball 5a is thermocompressed onto the pad of the pellet 2. Since the ball 5a is prevented from becoming hard by maintaining the gas atmosphere within a predetermined temperature range, the ball 5a can be thermocompression bonded with good bondability.
第１ボンディング部が形成された後、キャピラリー１１
がＸＹテーブル８およびボンディングヘッド９により３
次元的に相対移動され、所定のり−ド４にワイヤ５の中
間部を押着させる。このとき、キャピラリー１０に超音
波振動が付勢されるとともに、リード４がヒートブロッ
ク７によって加熱されているため、ワイヤ５はリード４
上に超音波熱圧着される。After the first bonding part is formed, the capillary 11
is 3 by the XY table 8 and bonding head 9.
The intermediate portion of the wire 5 is pressed against a predetermined glue 4 by being relatively moved in dimension. At this time, since the capillary 10 is energized by ultrasonic vibration and the lead 4 is heated by the heat block 7, the wire 5 is
Ultrasonic thermocompression bonding is applied to the top.
第２ボンディングが終了すると、クランパ１４がワイヤ
５を把持し、クランパ１４はキャピラリー１１と共に第
２ボンディング部に相対的に離反移動される。この離反
移動により、ワイヤ５は第２ボンディング部から引き千
切られる。その後、クランパ１４がワイヤ５の把持を解
除するとともに、キャピラリー１１が若干上昇すること
により、ワイヤ５の先端部がボール５ａの成形に必要な
長さだけ突き出される（テール出し）。When the second bonding is completed, the clamper 14 grips the wire 5, and the clamper 14 and the capillary 11 are moved away from each other relative to the second bonding section. This separation movement causes the wire 5 to be torn off from the second bonding portion. Thereafter, the clamper 14 releases its grip on the wire 5, and the capillary 11 rises slightly, so that the tip of the wire 5 is protruded by the length necessary to form the ball 5a (tail extension).
以降、前記作動がペレット２のパッドおよびインナリー
ド４の数に対応する回数だけ繰り返されることにより、
所要のワイヤボンディング作業が実施される。その後、
１単位のリードフレームについてのワイヤボンディング
作業が完了すると、押さえ具２９が上昇され、次のペレ
ット２がボンディングステージの所へ位置するようにリ
ードフレーム３が１ピンチ送られる。以後、各単位のペ
レット２について前記ワイヤボンディング作業が順次実
施されて行く。Thereafter, by repeating the above operation a number of times corresponding to the number of pads of the pellet 2 and the number of inner leads 4,
The necessary wire bonding operations are performed. after that,
When the wire bonding work for one unit of lead frame is completed, the presser 29 is raised and the lead frame 3 is fed one pinch so that the next pellet 2 is positioned at the bonding stage. Thereafter, the wire bonding operation is sequentially performed for each unit of pellets 2.
そして、前記ボンディング作業中、フィーダ６の上面に
開設された吹出口２４からリードフレーム酸化防止用還
元性ガス２２が常時吹き出されているため、リードフレ
ーム３は還元性ガス雰囲気内に浸漬されている。このと
き、還元性ガス雰囲気はフィーダ６上に敷設されたカバ
ー２７によって被覆されているため、この還元性ガス２
２はリードフレーム３およびペレット２を効果的に包囲
することになる。したがって、リードフレーム３等の酸
化は確実に防止されている。During the bonding operation, the reducing gas 22 for preventing oxidation of the lead frame is constantly blown out from the outlet 24 provided on the top surface of the feeder 6, so the lead frame 3 is immersed in the reducing gas atmosphere. . At this time, since the reducing gas atmosphere is covered by the cover 27 laid over the feeder 6, this reducing gas 2
2 will effectively surround the lead frame 3 and the pellet 2. Therefore, oxidation of the lead frame 3 and the like is reliably prevented.
また、押さえ具２９上に設備されたノズル３２からは窒
素ガス３０が窓孔２８上を横断するエアカーテンを形成
するように常時吹き出されており、窓孔２８が流体的に
遮藪されているため、窓孔２８外の大気がキャピラリー
１１の進退に伴う巻き込みによって窓孔２８からリード
フレーム酸化防止用還元性ガス２２の雰囲気へ侵入する
ことは防止されている。大気の侵入が防止されることに
より、前記リードフレーム３等の酸化防止作用は一層確
実に維持されるとともに、水素のような可燃ガスを含む
還元性ガス２２がカバー２７内で燃焼することは確実に
防止される。Further, nitrogen gas 30 is constantly blown out from a nozzle 32 installed on the presser 29 so as to form an air curtain that crosses over the window hole 28, so that the window hole 28 is fluidly blocked. Therefore, the atmosphere outside the window hole 28 is prevented from entering the atmosphere of the reducing gas 22 for preventing lead frame oxidation through the window hole 28 due to entrainment caused by the movement of the capillary 11. By preventing the entry of the atmosphere, the oxidation prevention effect of the lead frame 3 and the like is more reliably maintained, and it is certain that the reducing gas 22 containing combustible gas such as hydrogen will burn within the cover 27. is prevented.
ここで、リードフレームとして銅系のリードフレームが
使用されている場合、銅は酸化され易く、酸化膜がボン
ディング面に厚く形成されるため、第２ボンディングに
おけるボンダビリティ−が低下する。すなわち、酸化膜
が形成されると、ワイヤとの金属結合性が低下するため
、ボンダビリティ−が低下する。Here, when a copper-based lead frame is used as the lead frame, copper is easily oxidized and a thick oxide film is formed on the bonding surface, resulting in a decrease in bondability in the second bonding. That is, when an oxide film is formed, the metal bondability with the wire decreases, resulting in a decrease in bondability.
しかし、本実施例においては、フィーダ６上がカバー２
７により被覆されているとともに、そのカバー内に供給
された還元性ガス雰囲気により、フレーム３が包囲され
ているため、酸化され易いＩＬＩ＋
銅系リードフレームが使用されていても、その表面に酸
化膜が形成されることはなく、その結果、ワイヤ５は良
好なボンダビリティ−をもってリード４上にボンディン
グされることになる。However, in this embodiment, the top of the feeder 6 is the cover 2.
7 and is surrounded by a reducing gas atmosphere supplied within the cover, so even if an easily oxidized ILI+ copper lead frame is used, an oxide film will not form on its surface. As a result, the wire 5 is bonded onto the lead 4 with good bondability.
しかも、キャピラリー１１が進退する窓孔２８はノズル
３２から吹き出される窒素ガス３０によるエアカーテン
によりカバー２７の内外を遮断されているため、還元性
ガス雰囲気はきわめて効率的に形成されることになる。Moreover, since the window hole 28 through which the capillary 11 advances and retreats is blocked from the inside and outside of the cover 27 by an air curtain of nitrogen gas 30 blown out from the nozzle 32, a reducing gas atmosphere is formed extremely efficiently. .
そして、ノズル３２は押さえ具２９に取り付けられるこ
とにより、押さえ具２９の動きに追従するため、リード
フレーム３についてのボンディング作業を妨害すること
はない。Since the nozzle 32 is attached to the presser 29 and follows the movement of the presser 29, it does not interfere with the bonding work for the lead frame 3.
ところで、リードフレーム酸化防止用還元性ガス２２は
１０％の水素を含んでいるため、カバー２７外に逃散し
て大気中の酸素に接触することにより、放電電極１６の
アーク等を火種として着火し燃焼することがある。そし
て、カバーの外部で水素の燃焼が発生ずると、リードフ
レームの酸化等は起きないとしても、次のような点でポ
ンディ Ｃ
ング条件が変動するため、ボンダビリティ−の安定性が
低下するという問題点があることが、本発明者によって
明らかにされた。By the way, since the reducing gas 22 for preventing oxidation of the lead frame contains 10% hydrogen, it escapes outside the cover 27 and comes into contact with oxygen in the atmosphere, causing the arc of the discharge electrode 16 to ignite. May combust. Furthermore, if hydrogen combustion occurs outside the cover, even if oxidation of the lead frame does not occur, the bonding conditions will change in the following ways, reducing the stability of bondability. The present inventor has revealed that there is a problem.
（１） 環境温度の変動により、リードフレームやキ
ャピラリーの温度が不安定になるため、ボール生成や第
１および第２ボンディングにおける熱圧着作用が不安定
になる。(1) Fluctuations in environmental temperature cause the temperatures of the lead frame and capillary to become unstable, making ball formation and thermocompression bonding effects in the first and second bonding unstable.
（２） 環境温度の変動により、熱膨張の度合が変動
したり、装置各構成部の作動不良等が発生ずるため、ボ
ンディングの位置精度が低下する。(2) Due to fluctuations in environmental temperature, the degree of thermal expansion fluctuates and malfunctions of various components of the device occur, resulting in a decrease in bonding position accuracy.
（３）燃焼に伴う所謂陽炎の発生により、パターン認識
装置の画面が揺らくため、パターン認識精度が低下する
。(3) The screen of the pattern recognition device fluctuates due to the generation of so-called heat haze accompanying combustion, resulting in a decrease in pattern recognition accuracy.
しかし、本実施例においては、逃散した還元性ガス２２
は窓孔２８上に吹き出されている窒素ガス３０により可
燃条件範囲外に希釈されるため、還元性ガス２２中の水
素が燃焼することは防止され、その結果、ボンダビリテ
ィ−の安定性が維持される。However, in this embodiment, the escaped reducing gas 22
Since the nitrogen gas 30 blown onto the window hole 28 dilutes the gas to a level outside the flammable condition range, hydrogen in the reducing gas 22 is prevented from burning, and as a result, the stability of bondability is maintained. be done.
すなわち、カバー２７内の酸化防止用還元性ガス２２が
キャピラリー１１の進退に伴うこと等によって窓孔２８
から外部へ逃散したとしても、還元性ガス２２中に含ま
れた１０％の水素ガスはノズル３２から吹き出されてい
る窒素ガス３０と混合することにより希釈されるため、
燃焼することはない。つまり、水素は空気との混合比が
４％以下であると、燃焼しないため、１０％の水素が空
気との混合比４％以下に希釈されるようにノズル３２の
吹出口３３から窒素ガス３０を窒素ガス供給ユニット３
４の制御によって所定流量吹き出させておくことにより
、逃散した還元性ガス２２中の水素の燃焼を防止するこ
とができる。In other words, the reducing gas 22 for preventing oxidation inside the cover 27 is caused by the movement of the capillary 11 into the window hole 28.
Even if it escapes to the outside, the 10% hydrogen gas contained in the reducing gas 22 will be diluted by mixing with the nitrogen gas 30 blown out from the nozzle 32.
It will not burn. In other words, since hydrogen does not burn if the mixture ratio with air is 4% or less, nitrogen gas 3 Nitrogen gas supply unit 3
By blowing out a predetermined flow rate through the control in step 4, combustion of the hydrogen in the escaped reducing gas 22 can be prevented.
このようにしてカバー２７外における燃焼が防止される
ことにより、陽炎の発生が抑止され、環境温度が一定に
維持されるため、ボール生成や熱圧着作用、およびボン
ディングの位置精度やパターン認識精度が安定し、その
結果、それらに伴うボンダビリティ−の安定性低下は未
然に防止されることになる。By preventing combustion outside the cover 27 in this way, the generation of heat haze is suppressed and the environmental temperature is maintained constant, which improves ball formation, thermocompression bonding, bonding position accuracy, and pattern recognition accuracy. As a result, the deterioration in bondability stability that accompanies these is prevented.
前記実施例によれば次の効果が得られる。According to the embodiment described above, the following effects can be obtained.
（１１リードフレームの周囲から逃散して来た還元性ガ
スを窒素ガスによって可燃条件範囲外に希釈させること
により、逃散した還元性ガスの燃焼を抑止することがで
きるため、燃焼に伴うボンディング条件の変動によるボ
ンダビリティ−の安定性低下を未然に防止することがで
き、ボンディング、強いては製品の品質および信頼性を
高めることができる。(11) By diluting the reducing gas that has escaped from around the lead frame with nitrogen gas to a level outside the flammable condition range, combustion of the escaped reducing gas can be suppressed, so the bonding conditions associated with combustion can be suppressed. It is possible to prevent a decrease in the stability of bondability due to fluctuations, and it is possible to improve bonding and, ultimately, the quality and reliability of the product.
（２）希釈のための窒素ガスをボンディングステージに
開設された窓孔上に吹き出させてエアカーテンを形成さ
せることにより、窓孔の内外を流体的に遮断することが
できるため、大気の窓孔内への侵入、窓孔内の還元性ガ
スの外部への逃散を防止することができ、還元性ガス雰
囲気を確実に維持させることができるとともに、還元性
ガスの燃焼防止効果を一層高めることができる。(2) Nitrogen gas for dilution is blown out over the window hole in the bonding stage to form an air curtain, which can fluidly shut off the inside and outside of the window hole. It is possible to prevent the reducing gas from entering the inside and escaping to the outside of the window hole, making it possible to reliably maintain the reducing gas atmosphere and further enhancing the effect of preventing the combustion of the reducing gas. can.
〔３） リードフレームに還元性ガスを供給するよう
に構成することにより、リードフレームの周囲に還元性
ガスを効果的に形成させることができるため、銅系のよ
うに酸化され易いリードフレームであっても酸化膜の形
成を確実に防止することができ、銅系のリードフレーム
の使用を実現化することにより、コストの低減化等を促
進させることができる。[3] By configuring to supply reducing gas to the lead frame, reducing gas can be effectively formed around the lead frame, so it is possible to avoid using lead frames that are easily oxidized, such as copper-based lead frames. However, by realizing the use of a copper-based lead frame, it is possible to reliably prevent the formation of an oxide film, and by realizing the use of a copper-based lead frame, it is possible to promote cost reduction.
（４）酸化膜の形成を確実に防止することにより、良好
な金属結合性を維持して適正なボンダビリティ−を確保
することができるため、ボンディング、強いては製品の
品質および信頼性を高めることができる。(4) By reliably preventing the formation of an oxide film, it is possible to maintain good metal bonding and ensure proper bondability, which improves bonding and ultimately product quality and reliability. Can be done.
（５） フィーダ上にカバーを敷設し、このカバーに
ボンディング作業の実施に最小限度必要な開口面積の窓
孔を開設することにより、還元性ガスの逃散を最小限度
に抑制することができるため、還元性ガス雰囲気の形成
を一層効率化させることができるとともに、ガス使用量
を抑制させることができる。(5) By laying a cover over the feeder and opening a window hole in the cover with the minimum opening area necessary for carrying out the bonding work, the escape of reducing gas can be suppressed to a minimum. The formation of a reducing gas atmosphere can be made more efficient, and the amount of gas used can be suppressed.
以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.
例えば、燃焼防止のために供給するガスとしては窒素ガ
スを使用するに限らず、−その他の不活性ガスを使用し
てもよい。For example, the gas supplied to prevent combustion is not limited to nitrogen gas, but other inert gases may also be used.
不活性ガス供給手段はリードフレーム押さえ具に組み込
むに限らず、専用的に設備してもよい。The inert gas supply means is not limited to being incorporated into the lead frame presser, but may be installed exclusively.
また、エアカーテンを形成するように構成するに限らず
、逃散して来た還元性ガス中の可燃ガスを不活性ガスに
より単に希釈するように構成してもよい。In addition, the structure is not limited to forming an air curtain, and the structure may be such that the combustible gas in the reducing gas that has escaped is simply diluted with an inert gas.
不活性ガスの供給流量、流速、流圧やエアカーテンの層
厚等は、還元性ガスの種類、その中の可燃性ガスの濃度
、可燃条件の範囲、逃散して来るガスの流量、流速、流
圧等に対応して、実験やコンピュータ・シュミレーショ
ン等のような経験的手法、およびその分析による理論式
等により、最適範囲を求めることが望ましい。The supply flow rate, flow rate, and flow pressure of the inert gas and the layer thickness of the air curtain are determined by the type of reducing gas, the concentration of combustible gas in it, the range of combustible conditions, the flow rate and flow rate of the escaping gas, It is desirable to find the optimal range by using empirical methods such as experiments and computer simulations, and theoretical formulas based on the analysis, depending on the fluid pressure and the like.
リードフレームは銅系のものに■らず、鉄−ニソケル系
のリードフレーム等であってもよいし、さらには、被加
工物はペレットが搭載されたり一ドフレームに限らない
。The lead frame is not limited to a copper-based one, but may also be an iron-nisokel-based lead frame, and furthermore, the workpiece is not limited to a single frame on which pellets are mounted.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるワイヤボンディング
技術に適用した場合について説明したが、それに限定さ
れるものではなく、ペレットをリードフレームにボンデ
ィングするペレットボンディング技術等に適用すること
ができる。本発明は少なくとも、還元性ガスを用いる電
子装置の製造技術全般に適用することができる。The above explanation has mainly been about the case where the invention made by the present inventor is applied to wire bonding technology, which is the background field of application, but the invention is not limited thereto. It can be applied to bonding technology, etc. The present invention can be applied at least to general manufacturing techniques for electronic devices that use reducing gases.
本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、次の通りである。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
被加工物の周囲を通過した還元性ガスを不活性ガスによ
って可燃条件範囲外に希釈させることにより、還元性ガ
スの自然燃焼を防止することができるため、加工条件の
変動を防止することにより、加工の安定性低下を防止す
ることができる。By diluting the reducing gas that has passed around the workpiece with an inert gas to a level outside the flammable condition range, it is possible to prevent the natural combustion of the reducing gas, so by preventing fluctuations in processing conditions, It is possible to prevent a decrease in processing stability.
第１図は本発明の一実施例であるワイヤボンディング装
置を示す正面図、
第２図はその要部の拡大部分正面図である。FIG. 1 is a front view showing a wire bonding apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged partial front view of the main parts thereof.
Claims (1)
により可燃条件範囲外に希釈させることを特徴とする電
子装置の製造方法。 ２、被ボンディング物の周囲を通過した還元性ガスを不
活性ガスにより可燃条件範囲外に希釈させることを特徴
とする特許請求の範囲第１項記載の電子装置の製造方法
。 ３、不活性ガスとして、窒素ガスが使用されていること
を特徴とする特許請求の範囲第１項記載の電子装置の製
造方法。 ４、被加工物の周囲に還元性ガスを供給する還元性ガス
供給手段と、不活性ガスを被加工物付近に供給する不活
性ガス供給手段とを備えており、不活性ガス供給手段は
被加工物の周囲を通過した還元性ガスを不活性ガスによ
り可燃条件範囲外に希釈させるように構成されているこ
とを特徴とする電子装置の製造装置。 ５、不活性ガス供給手段が、被加工物と外気との間に不
活性ガスによるエアカーテンを形成するように構成され
ていることを特徴とする特許請求の範囲第４項記載の電
子装置の製造装置。 ６、被加工物が、ボンディング加工を施される被ボンデ
ィング物であり、不活性ガス供給手段の吹出ノズルが被
ボンディング物を押さえる押さえ具に付設されているこ
とを特徴とする特許請求の範囲第５項記載の電子装置の
製造装置。[Claims] 1. A method for manufacturing an electronic device, which comprises diluting a reducing gas that has passed around a workpiece with an inert gas to a level outside the flammable condition range. 2. The method of manufacturing an electronic device according to claim 1, characterized in that the reducing gas that has passed around the object to be bonded is diluted with an inert gas to a value outside the range of flammable conditions. 3. The method for manufacturing an electronic device according to claim 1, wherein nitrogen gas is used as the inert gas. 4. It is equipped with a reducing gas supply means for supplying a reducing gas around the workpiece, and an inert gas supply means for supplying an inert gas around the workpiece, and the inert gas supply means is provided around the workpiece. 1. An electronic device manufacturing apparatus, characterized in that the apparatus is configured to dilute a reducing gas that has passed around a workpiece with an inert gas to a value outside the range of flammable conditions. 5. The electronic device according to claim 4, wherein the inert gas supply means is configured to form an air curtain of inert gas between the workpiece and the outside air. Manufacturing equipment. 6. Claim No. 6, characterized in that the workpiece is a bonding object to be subjected to a bonding process, and the blowing nozzle of the inert gas supply means is attached to a presser that presses down the bonding object. 5. The electronic device manufacturing apparatus according to item 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099872A JPS63266846A (en) | 1987-04-24 | 1987-04-24 | Electronic device manufacturing method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62099872A JPS63266846A (en) | 1987-04-24 | 1987-04-24 | Electronic device manufacturing method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266846A true JPS63266846A (en) | 1988-11-02 |
Family
ID=14258899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62099872A Pending JPS63266846A (en) | 1987-04-24 | 1987-04-24 | Electronic device manufacturing method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266846A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6283850B1 (en) | 1998-09-29 | 2001-09-04 | Fujitsu Limited | Circuit board cabinet |
| JP2003007759A (en) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | Method of manufacturing recognition equipment, bonding equipment, and circuit device |
| JP2003037131A (en) * | 2001-07-25 | 2003-02-07 | Sanyo Electric Co Ltd | Bonding machine |
-
1987
- 1987-04-24 JP JP62099872A patent/JPS63266846A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6283850B1 (en) | 1998-09-29 | 2001-09-04 | Fujitsu Limited | Circuit board cabinet |
| JP2003007759A (en) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | Method of manufacturing recognition equipment, bonding equipment, and circuit device |
| JP2003037131A (en) * | 2001-07-25 | 2003-02-07 | Sanyo Electric Co Ltd | Bonding machine |
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