JPS63261850A - Vertical x-y stage - Google Patents
Vertical x-y stageInfo
- Publication number
- JPS63261850A JPS63261850A JP62097725A JP9772587A JPS63261850A JP S63261850 A JPS63261850 A JP S63261850A JP 62097725 A JP62097725 A JP 62097725A JP 9772587 A JP9772587 A JP 9772587A JP S63261850 A JPS63261850 A JP S63261850A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- wafer
- wafers
- axis
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Details Of Measuring And Other Instruments (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Machine Tool Units (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、SOR光によって露光する露光装置のX−Y
ステージであって、該X−Yステージの直交する2つの
自由度の内、一方の軸の案内機構、或いはアクチュエー
タを共用して、各々独立に移動可能な複数のステージ可
動部を有する構成により、ウェハのスルーブツトの向上
と、SOR光の有効利用を図ったものである。[Detailed Description of the Invention] [Summary] The present invention provides an X-Y
The stage is configured to have a plurality of stage movable parts that can each move independently by sharing a guide mechanism or an actuator for one of the two orthogonal degrees of freedom of the X-Y stage, This is aimed at improving wafer throughput and making effective use of SOR light.
本発明は、xFrM露先におけろウェハを搭載する縦型
X−Yステージに関する。The present invention relates to a vertical XY stage on which a wafer is mounted at an xFrM exposure tip.
最近、LSIの高集積度化に伴ない、X線露光が注目さ
れている。特にシンクロトロン放射光(SOR光)によ
って、マスク上に描かれたLSI回路パターンを、ウェ
ハ上に露光転写する方法は、ディープサブミクロン領域
における最も有望なりゾグラフィ技術として期待されて
いる。Recently, X-ray exposure has been attracting attention as LSIs become more highly integrated. In particular, a method of exposing and transferring an LSI circuit pattern drawn on a mask onto a wafer using synchrotron radiation light (SOR light) is expected to be the most promising lithographic technique in the deep submicron region.
このSOR光によるX線露光は、SOR光源自身が他の
光源に比べ2桁近(強い光を放射するので、露光に要す
る時間を短くすることができると云う特徴がある。 ・
このSOR光を用い、より微細なパターンをウェハ上に
より速く露光転写してウェハのスループットを向上させ
るためには、直接露光以外の処理時間を短縮する必要が
ある。その為には、ウエハの交換に要する時間を短縮す
る方法が要望されている。X-ray exposure using this SOR light has the characteristic that the SOR light source itself emits light that is nearly two orders of magnitude stronger than other light sources, so the time required for exposure can be shortened. In order to improve wafer throughput by exposing and transferring finer patterns onto wafers faster, it is necessary to reduce processing time other than direct exposure. There is a need for a method to shorten the time.
X−Yステージは、SOR光がその発生原理上水平に放
射されるので、鉛直平坦面内でステ・7プアンドリピ一
ト動作が可能な縦型ステージでなければならない。Since the SOR light is emitted horizontally due to its generation principle, the XY stage must be a vertical stage capable of step-and-repeat operation within a vertical flat plane.
第3図は従来の縦型X−Yステージを説明する図である
。FIG. 3 is a diagram illustrating a conventional vertical XY stage.
第3図において、本体1に2個のX軸案内機構2が対向
して配置され、該XLlilh案内機構2にガイドされ
て水平方向に運動するX軸ステージ4が設けられ、その
両端に該X軸ステージ4を駆動するX軸駆動用リニアD
Cモータ3が設けられている。In FIG. 3, two X-axis guide mechanisms 2 are disposed facing each other in the main body 1, and an X-axis stage 4 that moves in the horizontal direction while being guided by the X-axis drive linear D that drives axis stage 4
A C motor 3 is provided.
また、水平方向に運動するX軸ステージ4の上で、鉛直
方向に運動するY軸ステージ5が搭載され、該Y軸ステ
ージ5はY軸案内機構6にガイドされ、両側にあるY軸
駆動用リニアDCモータ7により移動される。なお、Y
軸ステージ5上には、ウェハを取付けるウェハチャック
8がある。さらに本体1下部には、ウェハ位置相合わせ
ステージ9と、該ウェハ位置相合わせステージ9へ未処
理ウェハを搬送するためのウェハ搬送用ア゛−ム10を
備えている。下部にある未処理ウェハ入れ12より未処
理ウェハ13を、ウェハ搬送用アーム10によりウェハ
位置相合わせステージ9に運んで、ウェハ位置を粗合わ
せした後、Y軸ステージ5上のウェハチャック8が該ウ
ェハをチャックし、所定位置で露光される。なお、露光
されたウェハ14は、ウェハ搬送用アーム10によって
露光法ウェハ入れ15に収容される構成である。Further, a Y-axis stage 5 that moves in the vertical direction is mounted on the X-axis stage 4 that moves in the horizontal direction, and the Y-axis stage 5 is guided by a Y-axis guide mechanism 6. It is moved by a linear DC motor 7. Furthermore, Y
On the axis stage 5 is a wafer chuck 8 for mounting a wafer. Further, the lower part of the main body 1 is provided with a wafer position matching stage 9 and a wafer transport arm 10 for transporting unprocessed wafers to the wafer position matching stage 9. The unprocessed wafer 13 is transported from the unprocessed wafer container 12 at the bottom to the wafer position alignment stage 9 by the wafer transfer arm 10, and after rough alignment of the wafer position, the wafer chuck 8 on the Y-axis stage 5 is moved to the wafer position alignment stage 9. The wafer is chucked and exposed in place. The exposed wafer 14 is accommodated in an exposure method wafer holder 15 by the wafer transfer arm 10.
(発明が解決しようとする問題点)
第3図の従来の縦型X−YステージはSOR光によるX
線露光で用いられ、SOR光によるX線露光は、SOR
光源自身が他の光源に比べ2桁近い強い光であり、露光
に要する時間が短くできる。(Problems to be solved by the invention) The conventional vertical X-Y stage shown in Fig. 3 uses
X-ray exposure using SOR light is
The light source itself is nearly two orders of magnitude stronger than other light sources, and the time required for exposure can be shortened.
しかし、ウェハの処理時間、例えばウェハ搬送用アーム
10により露光済みウェハを、露光法ウェハ入れ15に
入れたり、或いは未処理ウェハを未処理ウェハ入れ12
より取出して、ウェハ位置相合わせステージ9へ運ぶ等
の時間が短縮されない(これら露光以外の処理時間が露
光時間とほぼ同じである)。その為、さらにスループッ
トを向上させようとすると、ウェハの交換に要する時間
を短くしなければならないと云う問題点があった。However, depending on the wafer processing time, for example, exposed wafers may be placed in the exposure method wafer holder 15 by the wafer transfer arm 10, or unprocessed wafers may be placed in the unprocessed wafer holder 12.
The time for taking out the wafer and transporting it to the wafer position alignment stage 9 is not shortened (the processing time other than these exposures is almost the same as the exposure time). Therefore, in order to further improve the throughput, there is a problem in that the time required for exchanging wafers must be shortened.
nJ記問題点は、第1図のx−yステージの模式図及び
第2図の実施例に示されるように、X−Yステージの直
交する二つの自由度の内、一方の自由度の直動案内機構
2、或いはそのアクチュエータ3、或いはその両方の全
部或いは一部を共用して、各々独立に移動可能な複数の
ステージ可動部(X軸)A、Bを有する本発明の縦型X
−Yステージによって解決される。As shown in the schematic diagram of the x-y stage in FIG. 1 and the example in FIG. The vertical type X of the present invention has a plurality of stage movable parts (X-axis) A and B that are movable independently by sharing all or part of the motion guide mechanism 2, its actuator 3, or both.
- Solved by Y stage.
即ち、本発明の縦型X−Yステージは、一方の軸の案内
機構2を共用して、独立に動く複数台のステージ可動部
A、Bを有する。従って、ウェハを露光する場合、一方
のステージ可動部Aが、保持しているウェハの交換のた
め露光位置より退避した時、もう一方のステージ可動部
Bが露光位置に入り、SOR光でステージ可動部B上の
ウェハにマスクのLSI回路パターンを焼き付ける作業
を行なう。例えば、ステージBのウェハの露光中には、
ステージAはウェハの交換、ウェハの位置の粗合わせ等
を行なっている。That is, the vertical XY stage of the present invention has a plurality of stage movable parts A and B that share the guide mechanism 2 of one axis and move independently. Therefore, when exposing a wafer, when one stage movable part A retreats from the exposure position to replace the wafer it is holding, the other stage movable part B enters the exposure position, and the stage is moved by SOR light. The work of printing the LSI circuit pattern of the mask onto the wafer on section B is performed. For example, during stage B wafer exposure,
Stage A performs wafer exchange, rough alignment of wafer positions, and the like.
即ち、2台のステージA、Bを用いることにより、連続
出力しているSOR光を無駄なく使用できるとともに、
ウェハの交換に要する時間をなくすことができるので、
ウェハのスループットを向上させることができる。That is, by using two stages A and B, the SOR light that is continuously output can be used without wasting it, and
This eliminates the time required to exchange wafers.
Wafer throughput can be improved.
第2図は本発明の一実施例を説明する図で、図はSOR
用X線露光装置の縦型ステージの斜視図である。FIG. 2 is a diagram explaining one embodiment of the present invention, and the diagram shows an SOR
FIG. 2 is a perspective view of a vertical stage of an X-ray exposure apparatus.
第2図において、1は本体、2はX軸案内機構、3はX
軸駆動用リニアDCモータ、5はY軸ステージ、6はY
t!lh案内機構、7はY軸駆動用リニアDCモータ、
8はウェハチャック、9はウェハ位置組合わせステージ
、10はウェハ搬送用アーム、11は軸、12は未処理
ウェハ入れ、13は未処理ウェハ、14は露光済ウェハ
、15は露光済つェハ入れを示す。第3図のX−Yステ
ージには、水平方向くX軸方向)の案内機構2を共用す
る2つのステージ(ステージAとステージB)が取付け
られている。各々のステージA、Bは、両側に取付けた
コイル可動型リニアDCモータ3により駆動される。In Fig. 2, 1 is the main body, 2 is the X-axis guide mechanism, and 3 is the X-axis guide mechanism.
Linear DC motor for axis drive, 5 is Y axis stage, 6 is Y
T! lh guide mechanism, 7 is a linear DC motor for Y-axis drive,
8 is a wafer chuck, 9 is a wafer position combination stage, 10 is a wafer transfer arm, 11 is a shaft, 12 is an unprocessed wafer container, 13 is an unprocessed wafer, 14 is an exposed wafer, and 15 is an exposed wafer. Indicates the placement. Two stages (stage A and stage B) that share a guiding mechanism 2 in the horizontal direction (X-axis direction) are attached to the X-Y stage shown in FIG. Each stage A, B is driven by a coil movable linear DC motor 3 attached to both sides.
リニアDCモータ3の磁石(図示しない)は、双方のス
テージA、Bによって共用できるため、各々のステージ
案内機構に磁石を設ける必要がない。Since the magnet (not shown) of the linear DC motor 3 can be shared by both stages A and B, there is no need to provide a magnet in each stage guide mechanism.
また、各ステージABの上には、鉛直方向(Y軸方向)
の自由度を有するウェハステージ(Y軸ステージ5)が
搭載され、X軸と同様リニアDCが駆動することにより
、水平方向の自由度と合わせて、鉛直面内の運動を可能
にしている。In addition, above each stage AB, there is a vertical direction (Y-axis direction)
A wafer stage (Y-axis stage 5) having a degree of freedom of 1 is mounted, and driven by a linear DC like the X-axis, it enables movement in the vertical plane as well as a degree of freedom in the horizontal direction.
又、各ステージA、Bのウェハチャック8にセットされ
たウェハは、SOR光による露光後、退避位置において
、ウェハ搬送用アーム10で未処理のウェハと交換され
る。未処理の°ウェハーはウェハチャック8にセットさ
れる前に、位置の粗合わせが行なわれる。Further, the wafers set on the wafer chucks 8 of each stage A and B are replaced with unprocessed wafers by the wafer transfer arm 10 at the retreat position after being exposed to SOR light. Before the unprocessed wafer is set on the wafer chuck 8, its position is roughly adjusted.
上記のように、ステージAが上記一連のウェハー交換作
業並びに、ウェハ位置の粗合わせを行っている間、ステ
ージBではSOR光によってマスクパターンの露光転写
が行なわれているので、常に放射されているSOR光を
有効に利用することができる。さらに、一方のステージ
のウェハの交換時にも、他方のステージで露光が行なわ
れる為、スループットを上げることができる。As mentioned above, while stage A is performing the above-mentioned series of wafer exchange operations and rough alignment of wafer positions, stage B is performing exposure transfer of the mask pattern using SOR light, so it is constantly emitted. SOR light can be used effectively. Furthermore, even when wafers on one stage are replaced, exposure is performed on the other stage, so throughput can be increased.
なお、図では水平方向軸のステージ案内機構を共用して
いるが、鉛直方向軸のステージ案内機構を共用しても、
同機能の縦型ステージを構成することができる。In addition, although the stage guide mechanism for the horizontal axis is shared in the figure, even if the stage guide mechanism for the vertical axis is shared,
A vertical stage with the same function can be configured.
以上説明したように本発明によれば、複数(図では2つ
)のステージが水平方向(X軸方向)の案内機構及びX
軸駆動用モータを共用することにより、ウェハのスルー
プットの向上が可能となり、SOR光を有効に利用する
ことができる。As explained above, according to the present invention, a plurality of (two in the figure) stages are connected to the horizontal direction (X-axis direction) guide mechanism and the
By sharing the shaft drive motor, wafer throughput can be improved and SOR light can be used effectively.
第1図は本発明のX−Yステージの模式図、第2図は本
発明の一実施例を説明する図、第3図は従来の縦型X−
Yステージを説明する図である。
図において、
■は本体、
2はX軸案内機構(直動案内)、
3はX軸駆動、用リニアDCモータ、
5はY軸ステージ、
6はY軸案内機構(直動案内)、
7はY軸駆動用リニアDCモータ、
8はウェハチャック、
9はウェハ位置組合わせステージ、
10はウェハ搬送用アーム、
11は軸、
12は未処理ウェハ入れ、
13は未処理ウェハ、
14は露光済ウェハ、
B、ステージ呼物部(X細り
取鋼FIのX−γスナーレ゛久朶伐口
弗 12
省bkの刈モヤX−Yスナージン擬ヨ月する2茅 3
zFIG. 1 is a schematic diagram of the X-Y stage of the present invention, FIG. 2 is a diagram explaining an embodiment of the present invention, and FIG. 3 is a diagram of the conventional vertical X-Y stage.
It is a figure explaining Y stage. In the figure, ■ is the main body, 2 is the X-axis guide mechanism (linear guide), 3 is the X-axis drive, linear DC motor, 5 is the Y-axis stage, 6 is the Y-axis guide mechanism (linear guide), 7 is the Linear DC motor for Y-axis drive, 8 is a wafer chuck, 9 is a wafer position combination stage, 10 is an arm for wafer transfer, 11 is a shaft, 12 is an unprocessed wafer container, 13 is an unprocessed wafer, 14 is an exposed wafer , B, stage feature section (X thin steel FI's
z
Claims (1)
自由度の直動案内機構(2)、或いはそのアクチュエー
タ(3)、或いはその両方の全部或いは一部を共用して
、各々独立に移動可能な複数のステージ可動部(A、B
)を有することを特徴とする縦型X−Yステージ。[Claims] An X-Y stage, comprising: a linear motion guide mechanism (2) in one of the two orthogonal degrees of freedom of the X-Y stage, or its actuator (3); A plurality of stage movable parts (A, B
) A vertical X-Y stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097725A JPS63261850A (en) | 1987-04-20 | 1987-04-20 | Vertical x-y stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62097725A JPS63261850A (en) | 1987-04-20 | 1987-04-20 | Vertical x-y stage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63261850A true JPS63261850A (en) | 1988-10-28 |
Family
ID=14199863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62097725A Pending JPS63261850A (en) | 1987-04-20 | 1987-04-20 | Vertical x-y stage |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63261850A (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03213233A (en) * | 1990-01-12 | 1991-09-18 | Takeshi Yanagisawa | Successively provided motion mechanism |
| JPH10163100A (en) * | 1996-11-28 | 1998-06-19 | Nikon Corp | Projection exposure apparatus, projection exposure method, and scanning exposure method |
| US6400441B1 (en) | 1996-11-28 | 2002-06-04 | Nikon Corporation | Projection exposure apparatus and method |
| US6590636B2 (en) | 1997-01-27 | 2003-07-08 | Nikon Corporation | Projection exposure method and apparatus |
| US6819425B2 (en) | 2000-08-24 | 2004-11-16 | Asml Netherland B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7289212B2 (en) | 2000-08-24 | 2007-10-30 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufacturing thereby |
| JP2007293376A (en) * | 2007-08-14 | 2007-11-08 | Hitachi High-Technologies Corp | Exposure apparatus and substrate manufacturing method |
| JP2008091892A (en) * | 2006-09-11 | 2008-04-17 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP2008122996A (en) * | 2008-02-06 | 2008-05-29 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| JP2008124506A (en) * | 2008-02-06 | 2008-05-29 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| US7385671B2 (en) | 2004-05-28 | 2008-06-10 | Azores Corporation | High speed lithography machine and method |
| JP2008158545A (en) * | 2008-02-06 | 2008-07-10 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| US7561270B2 (en) | 2000-08-24 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| JP2012223805A (en) * | 2011-04-21 | 2012-11-15 | Seishin Shoji Kk | Laser beam machining apparatus, laser beam machining method, and laser beam machined product |
| WO2017204101A1 (en) * | 2016-05-26 | 2017-11-30 | 株式会社サーマプレシジョン | Projection exposure device and projection exposure method therefor |
| US11126096B2 (en) | 2017-09-29 | 2021-09-21 | Onto Innovation, Inc. | System and method for optimizing a lithography exposure process |
| US11687010B2 (en) | 2020-02-21 | 2023-06-27 | Onto Innovation Inc. | System and method for correcting overlay errors in a lithographic process |
-
1987
- 1987-04-20 JP JP62097725A patent/JPS63261850A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03213233A (en) * | 1990-01-12 | 1991-09-18 | Takeshi Yanagisawa | Successively provided motion mechanism |
| US7256869B2 (en) | 1996-11-28 | 2007-08-14 | Nikon Corporation | Exposure apparatus and an exposure method |
| JPH10163100A (en) * | 1996-11-28 | 1998-06-19 | Nikon Corp | Projection exposure apparatus, projection exposure method, and scanning exposure method |
| US6400441B1 (en) | 1996-11-28 | 2002-06-04 | Nikon Corporation | Projection exposure apparatus and method |
| US6549269B1 (en) | 1996-11-28 | 2003-04-15 | Nikon Corporation | Exposure apparatus and an exposure method |
| US6590634B1 (en) | 1996-11-28 | 2003-07-08 | Nikon Corporation | Exposure apparatus and method |
| US6798491B2 (en) * | 1996-11-28 | 2004-09-28 | Nikon Corporation | Exposure apparatus and an exposure method |
| US7177008B2 (en) | 1996-11-28 | 2007-02-13 | Nikon Corporation | Exposure apparatus and method |
| US6590636B2 (en) | 1997-01-27 | 2003-07-08 | Nikon Corporation | Projection exposure method and apparatus |
| US7633619B2 (en) | 2000-08-24 | 2009-12-15 | Asml Netherlands B.V. | Calibrating a lithographic apparatus |
| US7561270B2 (en) | 2000-08-24 | 2009-07-14 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7940392B2 (en) | 2000-08-24 | 2011-05-10 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| US7289212B2 (en) | 2000-08-24 | 2007-10-30 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufacturing thereby |
| US6819425B2 (en) | 2000-08-24 | 2004-11-16 | Asml Netherland B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7385671B2 (en) | 2004-05-28 | 2008-06-10 | Azores Corporation | High speed lithography machine and method |
| JP2008091892A (en) * | 2006-09-11 | 2008-04-17 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP2007293376A (en) * | 2007-08-14 | 2007-11-08 | Hitachi High-Technologies Corp | Exposure apparatus and substrate manufacturing method |
| JP2008124506A (en) * | 2008-02-06 | 2008-05-29 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| JP2008158545A (en) * | 2008-02-06 | 2008-07-10 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| JP2008122996A (en) * | 2008-02-06 | 2008-05-29 | Hitachi High-Technologies Corp | Proximity exposure apparatus and substrate manufacturing method |
| JP2012223805A (en) * | 2011-04-21 | 2012-11-15 | Seishin Shoji Kk | Laser beam machining apparatus, laser beam machining method, and laser beam machined product |
| WO2017204101A1 (en) * | 2016-05-26 | 2017-11-30 | 株式会社サーマプレシジョン | Projection exposure device and projection exposure method therefor |
| JP2017211534A (en) * | 2016-05-26 | 2017-11-30 | 株式会社サーマプレシジョン | Projection exposure apparatus and projection exposure method |
| US11126096B2 (en) | 2017-09-29 | 2021-09-21 | Onto Innovation, Inc. | System and method for optimizing a lithography exposure process |
| US11531279B2 (en) | 2017-09-29 | 2022-12-20 | Onto Innovation Inc. | System and method for optimizing a lithography exposure process |
| US11687010B2 (en) | 2020-02-21 | 2023-06-27 | Onto Innovation Inc. | System and method for correcting overlay errors in a lithographic process |
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