JPS6325661B2 - - Google Patents
Info
- Publication number
- JPS6325661B2 JPS6325661B2 JP13982184A JP13982184A JPS6325661B2 JP S6325661 B2 JPS6325661 B2 JP S6325661B2 JP 13982184 A JP13982184 A JP 13982184A JP 13982184 A JP13982184 A JP 13982184A JP S6325661 B2 JPS6325661 B2 JP S6325661B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- glass mask
- mask
- glass
- pure water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体装置製造工程で使用され
る、半導体ウエーハ用ガラスマスクの洗浄方法に
関し、特に、マスク上のしみ発生を防止する改良
に係わる。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for cleaning a glass mask for semiconductor wafers used in a semiconductor device manufacturing process, and particularly relates to an improvement for preventing the formation of stains on the mask.
半導体装置製造工程において、従来のガラスマ
スク洗浄方法は、第１図に示す洗浄装置の概要構
成図のようにしていた。１はガラスマスクで、回
転支持枠２上に載せられ電動機３により高速回転
される。ポンプ４で加圧した高圧イオン水６をノ
ズル５から噴出しガラスマスク１上面を洗浄す
る。
In the semiconductor device manufacturing process, a conventional glass mask cleaning method is as shown in the schematic diagram of a cleaning apparatus shown in FIG. Reference numeral 1 denotes a glass mask, which is placed on a rotating support frame 2 and rotated at high speed by an electric motor 3. High-pressure ionized water 6 pressurized by a pump 4 is ejected from a nozzle 5 to clean the upper surface of the glass mask 1.
洗浄後は、高圧イオン水６の噴出を止め、高速
回転を続行したまま、加熱ランプ７により乾燥さ
せていた。 After cleaning, the high-pressure ionized water 6 was stopped from being ejected, and the heating lamp 7 was used to dry the product while continuing high-speed rotation.
この洗浄方法のシーケンスを第２図に示し、ガ
ラスマスク１は同じ回転数のまま、高圧イオン水
６による洗浄と乾燥を行つていた。 The sequence of this cleaning method is shown in FIG. 2, in which the glass mask 1 was cleaned and dried with high-pressure ionized water 6 while keeping the same rotation speed.
ガラスマスク１を高速回転し純水を当てると、
静電破壊によりパターン膜のクロムはがれが起こ
るため、洗浄にはイオン水が使用されている。こ
のイオン水には、一般にマグネシウムを純水中に
溶解させたものが使用されている。 When glass mask 1 is rotated at high speed and pure water is applied,
Ionized water is used for cleaning because electrostatic damage causes chromium to peel off from the pattern film. This ionized water is generally made by dissolving magnesium in pure water.
上記従来の洗浄方法では、イオン水のマグネシ
ウム溶解液がそのまま乾き、ガラスマスク１上に
マグネシウムが残つたり、ポンプ４の軸受部から
漏れた潤滑油がイオン水に混入し、これがガラス
マスク１に欠陥を残すことがあつた。 In the conventional cleaning method described above, the magnesium solution in the ionized water dries as it is, leaving magnesium on the glass mask 1, or the lubricating oil leaking from the bearing of the pump 4 gets mixed into the ionized water, causing the glass mask 1 to get wet. Sometimes defects were left behind.
従来の洗浄方法によつたガラスマスク１の洗浄
結果を、第３図及び第４図に棒グラフで示す。第
３図は洗浄されたガラスマスク１数と、これらに
よりそれぞれパターンが形成されたチツプ（５
mm2）各10個分宛のしみ発生数との関係を示し、チ
ツプ10個分の発生しみ数が最多26個であつた。 The cleaning results of the glass mask 1 according to the conventional cleaning method are shown in bar graphs in FIGS. 3 and 4. Figure 3 shows one cleaned glass mask and a chip (5 chips) each with a pattern formed thereon.
mm 2 ) The relationship between the number of stains generated for each 10 chips was shown, and the maximum number of stains generated for 10 chips was 26.
また、第４図は洗浄されたガラスマスク１数
と、これによりそれぞれパターンが形成されたチ
ツプ（５mm2）各10個分宛のしみ発生確率との関係
を示し、最高100％であつた。 Furthermore, FIG. 4 shows the relationship between the number of cleaned glass masks and the probability of stain occurrence for each of ten chips (5 mm 2 ) each having a pattern formed thereon, which was 100% at maximum.
この発明は、ガラスマスクを高速回転させなが
ら高圧イオン水で洗浄し、この洗浄後低速回転に
落してさらに、純水により洗浄し、後、再び高速
回転させながら加熱乾燥するようにし、マグネシ
ウムや油分などがガラスマスク上に残らないよう
にする、半導体ウエーハ用ガラスマスクの洗浄方
法を提供することを目的としている。
This invention cleans the glass mask with high-pressure ionized water while rotating at high speed, then lowers the speed to low speed, washes it with pure water, and then heat-dries it while rotating at high speed again to remove magnesium and oil. It is an object of the present invention to provide a method for cleaning a glass mask for semiconductor wafers, which prevents residues such as the like from remaining on the glass mask.
この発明の一実施例によるガラスマスクの洗浄
方法を、第５図に示す洗浄装置の概要構成図によ
り説明する。まず、ガラスマスク１を回転支持枠
２上に載せ、電動機３により高速回転しながら、
ポンプ４で加圧した高圧イオン水６をノズル５か
ら噴出し、ガラスマスク１上面を洗浄し、高圧イ
オン水６の供給を止める。つづいて、ガラスマス
ク１を500rpm以下の低速回転に落し、低圧（１
〜２Kg／cm2）の純水１１を純水ノズル１０から噴
出しガラスマスク１を洗浄し、残留イオン水６を
洗い落し、マグネシウムや油分が残らないように
する。
A method of cleaning a glass mask according to an embodiment of the present invention will be explained with reference to a schematic configuration diagram of a cleaning apparatus shown in FIG. First, a glass mask 1 is placed on a rotating support frame 2, and while being rotated at high speed by an electric motor 3,
High-pressure ionized water 6 pressurized by the pump 4 is jetted out from the nozzle 5 to clean the upper surface of the glass mask 1, and the supply of the high-pressure ionized water 6 is stopped. Next, the glass mask 1 is rotated at a low speed of 500 rpm or less, and the low pressure (1
~2 Kg/cm 2 ) pure water 11 is jetted out from the pure water nozzle 10 to wash the glass mask 1 and wash off the residual ionized water 6 so that no magnesium or oil remains.
洗浄後は、純水１１の供給を止め、再びガラス
マスク１を高速回転させ、加熱ランプ７で乾燥す
る。 After cleaning, the supply of pure water 11 is stopped, the glass mask 1 is rotated at high speed again, and is dried with a heating lamp 7.
上記一実施例による洗浄方法のシーケンスを第
６図に示す。ガラスマスク１の回転数を、高圧イ
オン水洗浄と乾燥過程では約2500rpmの高速に
し、途中の純水１１による洗浄では500rpm以下
100rpmまでの低速にしている。 FIG. 6 shows the sequence of the cleaning method according to the above embodiment. The rotation speed of the glass mask 1 is set to a high speed of approximately 2500 rpm during the high-pressure ionized water cleaning and drying process, and 500 rpm or less during cleaning with pure water 11 during the process.
The speed is kept low to 100 rpm.
第７図に純水洗浄によるクロムはがれ発生率と
マスク回転数の相関図で示すように、マスクの回
転数が500rpmを超えると、クロムはがれが急増
する傾向にあることを見付けた。そのため、純水
１１による洗浄では、ガラスマスク１の回転数は
500rpm以下の低速にすることが必要である。な
お、図は純水１１による30秒間洗浄の場合を示し
ている。 As shown in the correlation diagram of the rate of chromium peeling due to pure water cleaning and the number of rotations of the mask in Figure 7, we found that when the number of rotations of the mask exceeds 500 rpm, chrome peeling tends to increase rapidly. Therefore, when cleaning with pure water 11, the rotation speed of the glass mask 1 is
It is necessary to keep the speed low, below 500 rpm. Note that the figure shows the case of washing with pure water 11 for 30 seconds.
上記一実施例の洗浄方法によつたガラスマスク
１の洗浄効果の結果を、第８図及び第９図に棒グ
ラフで示す。第８図は上記従来の第３図に相当
し、洗浄されたガラスマスク１数と、これらによ
りそれぞれパターンが形成されたチツプ各10個分
宛のしみ発生数との関係を示し、チツプ10個分の
発生しみ数は最多１個であつた。 The cleaning effect of the glass mask 1 according to the cleaning method of the above embodiment is shown in bar graphs in FIGS. 8 and 9. FIG. 8 corresponds to the conventional FIG. The maximum number of stains that appeared was 1 per minute.
また、第９図は上記従来の第４図に相当し、洗
浄されたガラスマスク１数と、これらによりそれ
ぞれパターンが形成されたチツプ各10個分宛のし
み発生確率との関係を示し、最大20％であつた。
こうして、ガラスマスク１の洗浄不良に起因する
チツプ内のパターン欠陥発生量は、従来のウエー
ハ当り20〜30％から、ウエーハ当り５％に改善さ
れ、良品チツプの歩留りは10％程度向上された。 In addition, Fig. 9 corresponds to the conventional Fig. 4, and shows the relationship between the number of cleaned glass masks and the probability of stain occurrence for each of 10 chips each having a pattern formed thereon. It was 20%.
In this way, the number of pattern defects within the chip due to poor cleaning of the glass mask 1 has been improved from the conventional 20 to 30% per wafer to 5% per wafer, and the yield of good chips has been improved by about 10%.
以上のように、この発明の方法によれば、ガラ
スマスクを高速回転させながら高圧イオン水で洗
浄し、つづいて、低速回転に落して純水により洗
浄し、後、再び高速回転し加熱乾燥するようにし
たので、ガラスマスク上にマグネシウムや油分な
どが残ることがなくなり、半導体ウエーハのチツ
プのパターン欠陥発生が大幅に低減され、歩留り
が向上される。
As described above, according to the method of the present invention, a glass mask is rotated at high speed and cleaned with high-pressure ionized water, then rotated at low speed and cleaned with pure water, and then rotated at high speed again and dried by heating. As a result, magnesium, oil, etc. do not remain on the glass mask, the occurrence of pattern defects in semiconductor wafer chips is greatly reduced, and the yield is improved.
第１図は従来のガラスマスクの洗浄方法を示す
洗浄装置の概要構成図、第２図は第１図による洗
浄方法のマスク回転数と洗浄乾燥過程との関係を
示すシーケンス図、第３図及び第４図は第２図の
洗浄方法により洗浄されたマスク数と、これらの
マスクによりパターンが形成されたチツプ各10個
分宛のしみ発生数との関係を示すグラフ及びしみ
発生確率との関係を示すグラフ、第５図はこの発
明の一実施例によるガラスマスクの洗浄方法を示
す洗浄装置の概要構成図、第６図は第５図による
洗浄方法のマスク回転数と洗浄乾燥過程との関係
を示すシーケンス図、第７図は純水洗浄によるク
ロムはがれ発生率とマスク回転数の相関曲線図、
第８図及び第９図は第６図の洗浄方法により洗浄
されたマスク数と、これらのマスクによりパター
ンが形成されたチツプ各10個分宛のしみ発生数と
の関係を示すグラフ及びしみ発生確率との関係を
示すグラフである。
１……ガラスマスク、２……回転支持枠、３…
…電動機、５……ノズル、６……高圧イオン水、
７……加熱ランプ、１０……ノズル、１１……純
水。なお、図中一符号は同一又は相当部分を示
す。
FIG. 1 is a schematic configuration diagram of a cleaning device showing a conventional glass mask cleaning method, FIG. 2 is a sequence diagram showing the relationship between the mask rotation speed and the cleaning and drying process in the cleaning method shown in FIG. 1, and FIGS. Figure 4 is a graph showing the relationship between the number of masks cleaned by the cleaning method shown in Figure 2 and the number of stains generated for each 10 chips on which patterns were formed using these masks, and the relationship with the probability of stain occurrence. FIG. 5 is a schematic configuration diagram of a cleaning device showing a glass mask cleaning method according to an embodiment of the present invention, and FIG. 6 is a graph showing the relationship between the mask rotation speed and the cleaning and drying process in the cleaning method according to FIG. 5. Figure 7 is a correlation curve diagram between the rate of chrome peeling caused by pure water cleaning and the number of rotations of the mask.
FIGS. 8 and 9 are graphs showing the relationship between the number of masks cleaned by the cleaning method shown in FIG. It is a graph showing the relationship with probability. 1...Glass mask, 2...Rotating support frame, 3...
...Electric motor, 5...Nozzle, 6...High pressure ionized water,
7... Heat lamp, 10... Nozzle, 11... Pure water. In addition, one code|symbol in a figure shows the same or equivalent part.
Claims (1)
ン水を噴出して洗浄し、つづいてガラスマスクを
低速回転させながら低圧の純水を噴出して洗浄
し、この後、ガラスマスクを高速回転させながら
加熱乾燥する半導体装置用ガラスマスクの洗浄方
法。 ２ 純水の圧力を１〜２Kg／cm2にすることを特徴
とする特許請求の範囲第１項記載の半導体装置用
ガラスマスクの洗浄方法。 ３ ガラスマスクの高速回転を2500rpmにするこ
とを特徴とする特許請求の範囲第１項又は第２項
記載の半導体装置用ガラスマスクの洗浄方法。 ４ ガラスマスクの低速回転を100〜500rpmにす
ることを特徴とする特許請求の範囲第１項ないし
第３項のいづれかに記載の半導体装置用ガラスマ
スクの洗浄方法。[Claims] 1. Washing the glass mask by spouting high-pressure ionized water while rotating it at high speed, then washing it by spouting low-pressure pure water while rotating the glass mask at low speed, and then cleaning the glass mask. A cleaning method for glass masks for semiconductor devices that involves heating and drying while rotating at high speed. 2. The method for cleaning a glass mask for a semiconductor device according to claim 1, wherein the pressure of the pure water is set to 1 to 2 kg/cm 2 . 3. A method for cleaning a glass mask for a semiconductor device according to claim 1 or 2, characterized in that the glass mask is rotated at a high speed of 2500 rpm. 4. A method for cleaning a glass mask for a semiconductor device according to any one of claims 1 to 3, characterized in that the glass mask is rotated at a low speed of 100 to 500 rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59139821A JPS6118958A (en) | 1984-07-04 | 1984-07-04 | Cleaning method of glass mask for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59139821A JPS6118958A (en) | 1984-07-04 | 1984-07-04 | Cleaning method of glass mask for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6118958A JPS6118958A (en) | 1986-01-27 |
| JPS6325661B2 true JPS6325661B2 (en) | 1988-05-26 |
Family
ID=15254249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59139821A Granted JPS6118958A (en) | 1984-07-04 | 1984-07-04 | Cleaning method of glass mask for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6118958A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188323A (en) * | 1986-02-14 | 1987-08-17 | Dainippon Screen Mfg Co Ltd | Method and equipment for washing and drying substrate |
| JPH0695511B2 (en) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | Washing and drying treatment method |
| US4817652A (en) * | 1987-03-26 | 1989-04-04 | Regents Of The University Of Minnesota | System for surface and fluid cleaning |
| JPH0745957Y2 (en) * | 1987-05-06 | 1995-10-18 | 株式会社ダン科学 | Carrier washing and drying device |
| JPH0745956Y2 (en) * | 1987-05-06 | 1995-10-18 | 株式会社ダン科学 | Carrier cleaning processor |
| JP2833762B2 (en) * | 1988-09-21 | 1998-12-09 | 株式会社芝浦製作所 | Glass substrate drying equipment |
| JP2653511B2 (en) * | 1989-03-30 | 1997-09-17 | 株式会社東芝 | Semiconductor device cleaning method and cleaning apparatus |
| JPH0320734A (en) * | 1989-06-16 | 1991-01-29 | Matsushita Electron Corp | Cleaning device |
| JPH03139832A (en) * | 1989-10-25 | 1991-06-14 | Ebara Corp | Jet scrubber |
| JP2894450B2 (en) * | 1989-10-30 | 1999-05-24 | 株式会社荏原製作所 | Jet scrubber |
| JP2894451B2 (en) * | 1989-11-06 | 1999-05-24 | 株式会社荏原製作所 | Jet scrubber |
| KR20020029206A (en) * | 2000-10-12 | 2002-04-18 | 윤종용 | Cleanable particle pellicle detector box |
| JP2002292346A (en) * | 2001-03-29 | 2002-10-08 | Sharp Corp | Method and apparatus for recovering deposited film |
| CN102357482B (en) * | 2011-09-22 | 2013-07-17 | 无锡泰东机械有限公司 | Efficient and fast online cleaning machine |
-
1984
- 1984-07-04 JP JP59139821A patent/JPS6118958A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6118958A (en) | 1986-01-27 |
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