JPS63250125A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a uniform pattern size even for the pattern where a difference in size in the transverse direction and in the longitudinal direction is large by a method wherein a vapor whose pressure of an organic chemical or an inorganic chemical has been kept constant is blown at high speed, uniformly on the whole surface of a semiconductor device substrate whose surface is coated with a photosensitive resin in the manner that the speeds of dissolution of the photosensitive resin and a decomposition reaction are made uniform. CONSTITUTION:A three-way valve 101 is closed; an alkaline aqueous solution 104 is gasified after it has been heated with a heater 105 and the wave motion has been caused with an ultrasonic generator 107. Then, this gas is guided to a heat exchanger 102; the alkaline aqueous solution is condensed; a vapor pressure is made uniform. Then, a semiconductor device substrate 203 whose surface is coated with a positive-type photoresist is held on a chuck 204 whose temperature is kept constant with a thermostatic chamber 208; the three-way valve 101 is opened; the gas of the alkaline aqueous solution which has been made uniform through a mash 202 inside a cup 201 is blown to the whole surface of the semiconductor device substrate 203; the positive-type photoresist on the surface of the substrate is decomposed selectively. After that, pure water is dropped from a nozzle 210 and the surface of the substrate 203 is cleaned.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photoprinting technique used in the manufacture of semiconductor devices, and in particular, selective printing of photosensitive resin on the surface of a semiconductor device substrate using an organic or inorganic chemical. dissolve or decompose into
Relating to a method for manufacturing a semiconductor device by forming a pattern of photosensitive resin.

[Conventional technology]

Conventionally, in the manufacturing method of this type of semiconductor device, a semiconductor device substrate 3 having a photosensitive resin on its surface is held on a rotatable check 4 using an apparatus as shown in FIG. Next, an organic or inorganic chemical is discharged from the nozzle 1 provided at the center of the semiconductor device substrate, and is raised onto the surface of the semiconductor device substrate using surface tension, selectively dissolving or decomposing the photosensitive resin on the surface of the semiconductor device substrate. do. Next, an organic or inorganic chemical or pure water as a cleaning liquid is discharged from the nozzle 2, and at the same time, the chuck 3 is rotated at low speed while holding the semiconductor device substrate to wash away the organic or inorganic chemical on the surface of the semiconductor device substrate. Next, the chuck 3 is rotated at high speed while holding the semiconductor device substrate, the semiconductor device substrate is dried, and a photosensitive resin pattern is formed on the surface of the semiconductor device substrate. It became.

[Problem that the invention seeks to solve]

In the conventional semiconductor device manufacturing method described above, an organic or inorganic chemical is dropped onto the surface of the semiconductor device substrate from a nozzle provided in the center of the semiconductor device substrate, and the surface tension is used to swell the semiconductor device substrate. It takes some time to sufficiently build up the organic or inorganic chemicals on the surface. Therefore, the first place where the organic or inorganic chemical came into contact with the photosensitive resin (in this case, the center of the semiconductor device board), and the last place where the organic or inorganic chemical came into contact with the photosensitive resin when the mounding was completed ( In this case, the semiconductor device 1u
There will be a time difference in the starting point of the selective dissolution or decomposition reaction of the photosensitive resin due to the outside of the substrate I'NJ). or,
When organic or inorganic chemicals first come into contact with the photosensitive resin, new organic or inorganic chemicals with no deterioration are successively supplied at key points (center of the semiconductor device substrate), promoting the dissolution or decomposition reaction of the photosensitive resin. As a result, the formed photosensitive resin pattern has a drawback that dimensional differences in the horizontal direction (line width) and vertical direction (residual film thickness) occur within the surface of the semiconductor device substrate (in this case, between the center and the outer periphery). There is.

This becomes more noticeable as semiconductor device substrates have larger diameters (up to 8 inches φ), which has been a trend in recent years.

[Failure to solve the problem]

In the method for manufacturing a semiconductor device of the present invention, a gas having a constant vapor pressure of an organic or inorganic chemical is uniformly applied from above and over the entire surface of a semiconductor device substrate having a photosensitive resin on the surface of the semiconductor device substrate. The photosensitive resin is sprayed at a low speed to simultaneously start dissolving or decomposing the photosensitive resin on the center, outer periphery, and entire surface of the semiconductor device substrate.

By keeping the vapor pressure of the organic or inorganic chemical gas constant, the concentration of substances that contribute to the selective dissolution or decomposition reaction of the photosensitive resin in the organic or inorganic chemical gas becomes constant, and the photosensitive resin The rate of selective dissolution or decomposition reaction becomes uniform.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a sectional view of one embodiment of the present invention.

In step 1, a gas having a constant vapor pressure of an alkaline aqueous solution is created, and in step 2, a positive photoresist on a semiconductor device substrate is treated with chemicals, and the semiconductor device substrate is rotated and dried.

First, in I, the three-way pulp 101 is closed, and heat is applied to the alkaline aqueous solution 104 by the heater 105 using the ultrasonic oscillator 107.
By applying wave motion, it is gasified. Next, the gas is led to the heat exchanger 102, where heat exchange is performed on the gas to cause dew condensation on the alkaline aqueous solution and to keep the vapor pressure constant. Bubbler 10
In step 6, paper pressure is applied to a gas such as N2, and the three-way pulp is
When 1 is opened, gas is blown onto the surface of the semiconductor device substrate.

Furthermore, bubbling with gas such as N2 using the bubbler 106 also has the function of promoting gasification of the alkaline aqueous solution. Piping 109 returns the alkaline aqueous solution condensed in heat exchanger 102 to liquid storage tank 103 .

Piping 108 is bubbler 1 when three-way pulp 101 is closed.
06 pressure is returned to the reservoir.

Next, in step 2, the semiconductor device substrate 203 with the positive photoresist on the surface is held on the chuck 204 kept at a constant temperature by the constant temperature device 208, the exhaust pulp 205 and the drain pulp 206 are closed, and the Open the three-way pulp 101 and open the mesh 7202 in the cup 201.
A uniform alkaline aqueous solution gas is sprayed over the entire surface of the semiconductor device substrate 203 to selectively decompose the positive type 7 photoresist on the surface of the semiconductor device substrate. Thereafter, the three-way pulp 101 is closed and the exhaust pulp 205 is opened to exhaust the aqueous alkaline solution gas. Next, the drain pulp 206
, open the top of the cup 202 , move the nozzle 210 that drips pure water onto the semiconductor device substrate, and drop the pulp 209 onto the semiconductor device substrate.
is opened, and pure water is dripped from the nozzle 210. at the same time,
A part of the chuck 204 moves upward while holding the semiconductor device substrate 203, rotates at low speed by the motor 207, and the semiconductor device is removed! The surface of the substrate 203 is cleaned.

Next, while holding the semiconductor device substrate 203, the chuck 20
4 is rotated at high speed to dry the semiconductor device substrate 203, and a photosensitive resin pattern is formed on the surface of the semiconductor device substrate 203.

〔Effect of the invention〕

As explained above, the present invention is capable of selectively dissolving or decomposing photosensitive resin on the surface of a semiconductor device substrate by dissolving a gas having a constant vapor pressure of an organic or inorganic chemical in an upward direction and over the entire surface of the semiconductor device substrate. The photosensitive resin is sprayed uniformly and at a low speed so that the dissolution or decomposition reaction starts without any difference within the surface of the semiconductor device substrate, so there is no difference in the horizontal and vertical dimensions within the surface of the semiconductor device substrate. pattern can be formed.

This means that the size of semiconductor device substrates is increasing (up to 8 inches φ
), there is a dog-like effect.

Furthermore, by keeping the vapor pressure of the organic or inorganic chemical gas constant, the concentration of substances that contribute to the selective dissolution and decomposition reaction of the photosensitive resin in the organic or inorganic chemical gas can be made constant. This results in a bottle that ensures reproducibility of the selective dissolution or decomposition reaction of the photosensitive resin.

[Brief explanation of drawings]

FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of an example of the prior art. 101...Three-way pulp, 102...Heat exchanger, 103...Liquid storage tank, 104...
...Organic or inorganic chemicals, 105...Heater, 106...-Bubbler, 107...
・Ultrasonic oscillator, 108...- Piping, 109...
...Piping, 201...Cup, 202...
...Mesh, 203 ... Semiconductor device substrate, 204 ... Chuck, 205 ... Exhaust pulp, 206 ... Drainage pulp, 207 ...
... Motor, 208 ... Constant temperature device, 20
9...Town...Pulp, 210...Nozzle, 1
...Nozzle, 2...Nozzle, 3...-
...Semiconductor device substrate, 4...Chuck, 5.
...Motor, 6...Exhaust pipe, 7...
...Drainage pipe.

Claims (1)

[Claims] In the photolithography process used in the manufacture of semiconductor devices, a gas containing vaporized organic or inorganic chemicals is sprayed onto the photosensitive resin on the surface of the semiconductor device substrate from above, selectively dissolving or decomposing the photosensitive resin. A method for manufacturing a semiconductor device, characterized in that: