JPS63249361A - Semiconductor lead frame - Google Patents
Semiconductor lead frameInfo
- Publication number
- JPS63249361A JPS63249361A JP8282287A JP8282287A JPS63249361A JP S63249361 A JPS63249361 A JP S63249361A JP 8282287 A JP8282287 A JP 8282287A JP 8282287 A JP8282287 A JP 8282287A JP S63249361 A JPS63249361 A JP S63249361A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- plating
- nickel
- plated layer
- bath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の目的)
本発明は、銅合金に銅めっきを施した電子部品用素材の
錫又ははんだ被覆後の長時間加熱による剥!(以下熱剥
踵という)を防止する方法を提供するものである。DETAILED DESCRIPTION OF THE INVENTION (Objective of the Invention) The present invention is directed to peeling off a copper alloy material for electronic parts by applying tin or solder coating and then heating it for a long period of time. (hereinafter referred to as heat peeling).
(従来の技術及び問題点)
銅合金リードフレーム分野においては、従来インナーリ
ード部にワイヤーボンディング性を向上させるために金
、銀等の貴金属めっきを施しているが、生産性、経済性
、品質等の観点から前記の金、銀等の貴金属めっきにか
えて銅めっきを用いる傾向にある。(Conventional technology and problems) In the field of copper alloy lead frames, the inner leads are conventionally plated with precious metals such as gold and silver to improve wire bonding properties, but there are problems with productivity, economy, quality, etc. From this point of view, there is a tendency to use copper plating instead of the above-mentioned precious metal plating such as gold and silver.
一方、リードフレームのアウターリード部には基板への
実装を目的としてはんだ又は錫を電気めっき又は溶融め
っき等で被覆することが行われている。しかし、上記の
銅合金上に直接鋼めっきされたリードフレームに錫又は
はんだを被覆すると、使用中の高温長時間の熱履歴によ
り母材から錫又ははんだが剥離し接触不良となる問題が
あった。On the other hand, the outer lead portion of a lead frame is coated with solder or tin by electroplating, hot-dip plating, etc. for the purpose of mounting on a board. However, when tin or solder is coated on a lead frame that is directly plated with steel on the above-mentioned copper alloy, there is a problem that the tin or solder peels off from the base material due to the high temperature and long-term thermal history during use, resulting in poor contact. .
そしてまた現在、IC実装方法がピン挿入タイプから表
面実装タイプに移行しているので、この表面実装タイプ
に必要とされる錫又ははんだの耐剥離性がさらに重要に
なってきている。Furthermore, as the IC mounting method is currently shifting from the pin insertion type to the surface mount type, the peeling resistance of tin or solder required for this surface mount type has become even more important.
(発明の構成)
本発明は銅合金と銅めっき層との間にニッケルめっき層
が介在する少なくとも3層構造を備えたリードフレーム
に関する。(Structure of the Invention) The present invention relates to a lead frame having at least a three-layer structure in which a nickel plating layer is interposed between a copper alloy and a copper plating layer.
(発明の詳細な説明)
半導体リードフレームの素地となる銅合金にはSn;1
〜8wt%、P;0.03〜0.35wt%、残部Cu
及び不可避的不純物又は上記成分にさらに副成分として
Mn、Ni、Si、Cr、Zr、In、のうち1種また
は2種以上を0.05〜2wt%含有し残部Cu及び不
可避的不純物からなるりん青銅系銅合金、Sn;0.1
〜3wt%、Ni ; 0.1〜10.0wt%、残部
Cu及び不可避的不純物又は上記成分にさらに副成分と
してMn;Q、5wt%以下、Fed、1wt%以下、
PO,1wt%以下の1種または2種以上を含有し残部
Cu及び不可避的不純物からなるCu−8n−Ni系銅
合金、Fe;1.O〜4゜0wt%、残部Cu及び不可
避的不純物又は上記成分にさらに副成分としてP;0.
01〜0.1wt%、Z n : O−05〜O−3w
t%の1種または2種以上を含有し残部Cu及び不可
避的不純物からなるCu−Fe系銅合金並びにSn;0
゜3〜2wt%、Fed、5〜3.Owt%、残部Cu
及び不可避的不純物又は上記成分にさらに副成分として
pro、03〜1.0wt%、Zr;0.05〜1wt
%、Co1wt%以下のうち1種または2種以上を含有
し残部Cu及び不可避的不純物からなるCu−3n−F
e系銅合金などの熱剥離を起し易い銅合金に対して適用
されるが、耐熱剥離性のリードフレーム材としての安全
性を考慮して他のリードフレーム用銅合金に対しても適
用することができる。上記のような銅合金についてアル
カリ脱脂、電解脱脂、酸洗、水洗等の所定の浄化処理を
公知の態様で実施した後1本発明に従ってニッケルめっ
き及び銅めっきを施す。このニッケルめっき及び銅めっ
きは通常電気めっきにより行うが、これ以外のめっき方
法である無電解めっきあるいは真空蒸着等の乾式めっき
によりめっきを施しても問題はない。ニッケルめっきの
厚さは本発明においては特に制限はないが、0゜1〜2
μ程度が好ましい。その理由は2μを超えると加工性が
悪くなる傾向にあり、また、0.1μ未満では耐熱剥離
に対する効果が薄くなるためである。銅めっきの厚さに
ついても特に制限はなく、リードフレーム材としての用
途に応じてその厚さが決められる。(Detailed Description of the Invention) The copper alloy that is the base material of the semiconductor lead frame contains Sn;
~8wt%, P; 0.03~0.35wt%, balance Cu
and unavoidable impurities, or phosphorus containing 0.05 to 2 wt% of one or more of Mn, Ni, Si, Cr, Zr, and In as subcomponents in addition to the above components, with the remainder being Cu and unavoidable impurities. Bronze-based copper alloy, Sn; 0.1
~3 wt%, Ni; 0.1 to 10.0 wt%, balance Cu and unavoidable impurities or Mn as a subcomponent to the above components; Q, 5 wt% or less, Fed, 1 wt% or less,
Cu-8n-Ni based copper alloy containing PO, 1 wt% or less of one or more kinds, the balance being Cu and unavoidable impurities; 1. O~4°0wt%, balance Cu and unavoidable impurities or P as a subcomponent in addition to the above components; 0.
01~0.1wt%, Zn: O-05~O-3w
Cu-Fe based copper alloy containing one or more types of t% and the balance consisting of Cu and inevitable impurities, and Sn; 0
°3-2wt%, Fed, 5-3. Owt%, balance Cu
and unavoidable impurities or additional subcomponents to the above components: pro, 03 to 1.0 wt%, Zr; 0.05 to 1 wt%
%, Co1wt% or less, and the remainder is Cu and inevitable impurities.Cu-3n-F
It is applied to copper alloys that are prone to thermal peeling such as e-series copper alloys, but it is also applied to other copper alloys for lead frames in consideration of safety as lead frame materials with heat peeling resistance. be able to. After the copper alloy described above is subjected to predetermined purification treatments such as alkaline degreasing, electrolytic degreasing, pickling, and water washing in a known manner, nickel plating and copper plating are applied according to the present invention. The nickel plating and copper plating are usually performed by electroplating, but there is no problem in plating by other plating methods such as electroless plating or dry plating such as vacuum evaporation. The thickness of the nickel plating is not particularly limited in the present invention, but is between 0°1 and 2°.
It is preferably about μ. The reason for this is that if it exceeds 2μ, workability tends to deteriorate, and if it is less than 0.1μ, the effect on heat-resistant peeling becomes weak. There is no particular limit to the thickness of the copper plating, and the thickness is determined depending on the use as a lead frame material.
次にニッケル及び銅めっきの電気めっきの浴組成及びめ
っき条件の代表例を以下に記す。Next, typical examples of electroplating bath compositions and plating conditions for nickel and copper plating are described below.
銅めっき
硫酸銅浴
硫 酸 銅 150〜240 g /
QWit 61 30”1
00g/12光 沢 剤 適 当 量
浴 温 20〜60 ℃電流
密度 1〜10 A/da”
、ピロリン酸銅めっき
ピロリン酸銅 63〜105 g / R銅
分 23〜38g/Ωピロ
リン酸カリウム 240〜470 g / Qアン
モニア水(比重0.88) 2〜6+ fl /
Q硝酸カリウム ・ 8〜16□gIQ光 沢
剤 適 当 量浴 温
50〜60 ℃P H8,2〜8.8
電流密度 0.9〜7 A/dm”
ニッケルめっき
ワット浴
硫酸ニッケル 240〜330 g / Q塩
化ニッケル 45 gIQは う
酸 30〜38 g / Q浴
温 40〜70 ℃電流密度
2〜10 A/da”
ウッド浴
塩化ニッケル 200〜300 g / Q塩
酸 30〜45 g /
Q浴 温 40〜60 ℃電
流密度 2〜10 A/dm”
(本発明の効果)
本発明により、ニッケルめっき及び銅めっきを施した素
材に錫またははんだを電気めっきあるいは溶融めっき法
等で被覆したものは、高温下の使用中にもめっき層の剥
離を生じない。例えば、150℃の温度で1000時間
保持した後90″″曲げ剥離試験を行っても剥離は全く
生じない。Copper plating copper sulfate bath sulfuric acid copper 150-240 g/
QWit 61 30”1
00g/12 Brightener Appropriate amount Bath temperature 20~60℃ Current density 1~10 A/da", Copper pyrophosphate plating Copper pyrophosphate 63~105 g/R copper
Minutes 23-38g/Ω Potassium pyrophosphate 240-470g/Q Ammonia water (specific gravity 0.88) 2-6+ fl/
Q Potassium nitrate ・8~16□gIQ gloss
Appropriate amount of agent bath temperature
50~60℃PH H8,2~8.8 Current density 0.9~7 A/dm" Nickel plated Watt bath Nickel sulfate 240~330 g/Q Nickel chloride 45 gIQ Yes
Acid 30-38 g/Q bath
Temperature 40~70℃ Current density
2-10 A/da” Wood bath Nickel chloride 200-300 g / Q Hydrochloric acid 30-45 g /
Q bath temperature: 40-60°C Current density: 2-10 A/dm" (Effects of the present invention) According to the present invention, a nickel-plated and copper-plated material is coated with tin or solder by electroplating or hot-dip plating. The plated layer does not peel off even during use at high temperatures.For example, no peeling occurs even when a 90'' bending peel test is performed after being held at a temperature of 150°C for 1000 hours.
次に本願発明の実施例について説明する。Next, embodiments of the present invention will be described.
(実施例)
実施例1
リん青銅条をアルカリ脱脂、電解脱脂、そして酸洗中和
後1μのニッケルめっきを施した。その扱銅めっきを1
μ施し、その後鍋もしくははんだを電気めっき、溶融め
っき、電気めっき後、溶融めっきを1μもしくはそれ以
上施した。浴組成ならびにめっき条件は下記の通りであ
る。(Example) Example 1 A phosphor bronze strip was subjected to alkaline degreasing, electrolytic degreasing, pickling and neutralization, and then 1μ nickel plating was applied. The handling copper plating is 1
After that, the pot or solder was electroplated, hot-dip plated, and after electroplating, hot-dip plating of 1μ or more was applied. The bath composition and plating conditions are as follows.
ニッケルめっき
浴組成1 ウッド浴
塩化ニッケル 240 g / Q塩
酸 40gIQ浴
温 25 ℃電流密JJE
S A/da”浴組成2 ワット浴
硫酸ニッケル 330 g / Q塩化ニッ
ケル 45 g / Qは う
酸 38 g / Q温
度 45 ℃電流密度 5
A/da”
銅めっき
浴組成3 硫酸鋼浴
硫 酸 鋼 210 g / Q硫
酸 100 g / Q浴
温 30℃電流密度
5 A/da”
浴組成4 ビロリン酸銅浴
ピロリン酸銅 80 g / Qピロリン
酸カリウム 300 g / Qアンモニア水(比
重0.88) 4+* Q / Q硝酸カリウム
12g/Ω浴 温
50 ℃電流密度 5 A/d+++z
錫めっき
浴組成5 硫酸錫浴
硫 酸 錫 70 g / fl
硫 酸 100 g / Q
クレゾールスルホン酸 100 g / Qゼラチン
2g/Q
ベーターナフトール 1.5g/Q浴 温
20 ℃電流密度 3 A/
dm”
浴組成6 溶融錫めっき
錫
浴 温 240℃±5℃フラックス
25%ロジンメタクールはんだめっき
浴組成6 フェノールスルホン酸浴
フェノールスルホン酸第−錫 200 g / Qフェ
ノールスルホン酸鉛 40gIQフェノールスル
ホン酸 150 g / Q浴 温
20 ℃電流密度
3 A/da”
浴組成8 溶融はんだめっき
Sn/Pb 6G/40
温 度 235℃±5℃フラックス
25%ロジンメタクールこうしてめっきを施された
試料を150℃において1000時間大気加熱した後9
0°曲げ試験による剥離試験を行った。結果を第1表に
示すが剥離は生じなかった。Nickel plating bath composition 1 Wood bath nickel chloride 240 g/Q salt
Acid 40gIQ bath
Temperature 25℃ Current density JJE
S A/da” Bath composition 2 Watt bath Nickel sulfate 330 g/Q Nickel chloride 45 g/Q
Acid 38g/Q temperature
degree 45℃ current density 5
A/da” Copper plating bath composition 3 Sulfuric acid steel bath Sulfuric acid steel 210 g / Q Sulfuric acid 100 g / Q bath
Temperature: 30℃ Current density
5 A/da” Bath composition 4 Copper pyrophosphate bath Copper pyrophosphate 80 g / Q Potassium pyrophosphate 300 g / Q Aqueous ammonia (specific gravity 0.88) 4+* Q / Q Potassium nitrate
12g/Ω bath temperature
50°C Current density 5 A/d+++z Tin plating bath composition 5 Tin sulfuric acid bath Sulfuric acid Tin 70 g/fl
Sulfuric acid 100g/Q
Cresol sulfonic acid 100 g / Q gelatin 2 g / Q Beta naphthol 1.5 g / Q bath temperature 20 °C Current density 3 A /
dm” Bath composition 6 Hot dip tin plating tin bath Temperature 240℃±5℃Flux
25% Rosin Metacool Solder Plating Bath Composition 6 Phenolsulfonic Acid Bath Stannous Phenolsulfonate 200 g / Q Lead Phenolsulfonate 40 g IQ Phenolsulfonic Acid 150 g / Q Bath Temperature 20 °C Current Density
3 A/da” Bath composition 8 Hot-dip solder plating Sn/Pb 6G/40 Temperature 235°C ± 5°C Flux
After heating the thus plated sample in the atmosphere at 150°C for 1000 hours, 9
A peel test was conducted using a 0° bending test. The results are shown in Table 1, and no peeling occurred.
比較例1
ニッケルめっきを施さない他は、すべて実施例1と同等
にして試料を作成した。剥離試験の結果、すべての試料
に剥離が生じた。実施例1と同様に第1表にその結果を
示す。Comparative Example 1 A sample was prepared in the same manner as in Example 1 except that nickel plating was not performed. As a result of the peel test, peeling occurred in all samples. Similar to Example 1, the results are shown in Table 1.
実施例2及び比較例2
りん青銅にMn、Ni、Si%Cr、Zr、Inそれぞ
れを1種類以上を1wt%添加したものについて実施例
1及び比較例1と同等にして試料を作成した。剥離試験
の結果、ニッケルめっきを施したものは剥離はおこさず
、ニッケルめっきを施していないものは剥離をおこした
。なお、これは実施例1及び比較例1と同じ結果であっ
たので一覧表は割愛した。Example 2 and Comparative Example 2 Samples were prepared in the same manner as in Example 1 and Comparative Example 1 using phosphor bronze in which 1 wt % of each of one or more of Mn, Ni, Si% Cr, Zr, and In was added. As a result of the peel test, the nickel plated sample did not peel off, while the non-nickel plated sample did peel off. Note that since this was the same result as Example 1 and Comparative Example 1, the list was omitted.
以下余白Margin below
Claims (1)
る少なくとも3層構造を備えた半導体リードフレーム。1) A semiconductor lead frame having at least a three-layer structure in which a nickel plating layer is interposed between a copper alloy and copper plating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8282287A JPS63249361A (en) | 1987-04-06 | 1987-04-06 | Semiconductor lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8282287A JPS63249361A (en) | 1987-04-06 | 1987-04-06 | Semiconductor lead frame |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63249361A true JPS63249361A (en) | 1988-10-17 |
Family
ID=13785094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8282287A Pending JPS63249361A (en) | 1987-04-06 | 1987-04-06 | Semiconductor lead frame |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63249361A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244650A (en) * | 1989-03-16 | 1990-09-28 | Fujitsu Ltd | Semiconductor device |
JPH04302459A (en) * | 1991-03-29 | 1992-10-26 | Sumitomo Metal Mining Co Ltd | Lead frame made of solder/cu/cu alloy |
US5585195A (en) * | 1992-07-11 | 1996-12-17 | Shinko Electric Industries Company, Limited | Metal insert and rough-surface treatment method thereof |
KR100464905B1 (en) * | 1997-10-31 | 2005-04-06 | 삼성전자주식회사 | Leadframe Surface Treatment |
JP2005251762A (en) * | 1995-12-18 | 2005-09-15 | Olin Corp | Tin coated electrical connector |
JP2009076473A (en) * | 1995-12-18 | 2009-04-09 | Olin Corp | Tin coated electrical connector |
-
1987
- 1987-04-06 JP JP8282287A patent/JPS63249361A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244650A (en) * | 1989-03-16 | 1990-09-28 | Fujitsu Ltd | Semiconductor device |
JPH04302459A (en) * | 1991-03-29 | 1992-10-26 | Sumitomo Metal Mining Co Ltd | Lead frame made of solder/cu/cu alloy |
US5585195A (en) * | 1992-07-11 | 1996-12-17 | Shinko Electric Industries Company, Limited | Metal insert and rough-surface treatment method thereof |
JP2005251762A (en) * | 1995-12-18 | 2005-09-15 | Olin Corp | Tin coated electrical connector |
JP2009076473A (en) * | 1995-12-18 | 2009-04-09 | Olin Corp | Tin coated electrical connector |
KR100464905B1 (en) * | 1997-10-31 | 2005-04-06 | 삼성전자주식회사 | Leadframe Surface Treatment |
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