JPS63239150A - Method for manufacturing superconducting ceramic thin films - Google Patents
Method for manufacturing superconducting ceramic thin filmsInfo
- Publication number
- JPS63239150A JPS63239150A JP62075175A JP7517587A JPS63239150A JP S63239150 A JPS63239150 A JP S63239150A JP 62075175 A JP62075175 A JP 62075175A JP 7517587 A JP7517587 A JP 7517587A JP S63239150 A JPS63239150 A JP S63239150A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- superconducting ceramic
- ceramic thin
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 9
- 239000000470 constituent Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 239000011575 calcium Substances 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 238000001035 drying Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 150000001242 acetic acid derivatives Chemical class 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- ITHZDDVSAWDQPZ-UHFFFAOYSA-L barium acetate Chemical compound [Ba+2].CC([O-])=O.CC([O-])=O ITHZDDVSAWDQPZ-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-O 1H-indol-1-ium Chemical compound C1=CC=C2[NH2+]C=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-O 0.000 description 1
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JLRJWBUSTKIQQH-UHFFFAOYSA-K lanthanum(3+);triacetate Chemical compound [La+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JLRJWBUSTKIQQH-UHFFFAOYSA-K 0.000 description 1
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、超電導セラミックス薄膜の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a superconducting ceramic thin film.
従来、超電導セラミックスは、Ｌａ２Ｏ２、ＢａＣ（１
＋、ＣｕＯなどの原料粉末を混合した後、乾燥し、その
後原料粉末をプレスし、次いで予備焼結を行ない、さら
に粉砕した後、再びプレスを行ない、その後最終焼結を
行なって製造されている。Conventionally, superconducting ceramics include La2O2, BaC(1
It is manufactured by mixing raw material powders such as +, CuO, drying, pressing the raw material powders, then pre-sintering, pulverizing them, pressing again, and then final sintering. .
したがって、上記従来の製造方法では、バルク状の超電
導セラミックスは製造することができても、薄膜状の超
電導セラミノゲスは製造することはできなかった。Therefore, with the conventional manufacturing method described above, although bulk superconducting ceramics can be manufactured, thin film superconducting ceraminoges cannot be manufactured.
また薄膜状の超電導セラミックスを製造する方法として
は、スパッタ法も考えられるが、この方法は、あらかじ
めターゲットを作成する必要があるなど、工程が複雑で
あるという問題がある。A sputtering method may also be considered as a method for manufacturing thin film superconducting ceramics, but this method has the problem of a complicated process, such as the need to prepare a target in advance.
薄膜状の超電導セラミックスは、電子分野等において広
い用途が期待されているため、この発明は、極めて容易
に超電導セラミックス薄膜を製造する方法を提供しよう
とするものである。Since thin-film superconducting ceramics are expected to have a wide range of uses in the electronic field and the like, the present invention aims to provide a method for manufacturing superconducting ceramic thin films extremely easily.
この発明の製造方法は、超電導セラミックスの構成元素
を酢酸塩の水溶液にして基板上に塗布した後、乾燥せし
め、その後空気中で加熱処理して基板上に超電導セラミ
ックスを形成せしめるようにしたものである。In the manufacturing method of the present invention, the constituent elements of superconducting ceramics are made into an aqueous solution of acetate and applied onto a substrate, dried, and then heated in air to form superconducting ceramics on the substrate. be.
上記方法では、超電導セラミックスの構成元素を酢酸塩
の水溶液にして基板上に塗布させることによって、基板
上に超電導セラミックスの形成材料が薄膜状に形成され
るため、その後の加熱処理によって薄膜状の超電導セラ
ミックスが得られる。In the above method, the constituent elements of superconducting ceramics are made into an aqueous solution of acetate and applied onto the substrate, so that the material forming the superconducting ceramics is formed in a thin film form on the substrate. Ceramics are obtained.
〔実施例〕 以下、この発明の詳細な説明する。〔Example〕 The present invention will be described in detail below.
まず、最初に、ランタン、バリウム、インドリウム、銅
、サマリウム、セレン等の超電導セラミックスの構成元
素の酢酸塩を原料にして、これらの原料を目的とする超
電導セラミックスの組成になるように調合する。First, acetates of constituent elements of superconducting ceramics such as lanthanum, barium, indolium, copper, samarium, and selenium are used as raw materials, and these raw materials are mixed to have the composition of the intended superconducting ceramic.
この後、調合した酢酸塩を水に溶解して酢酸塩の水溶液
を作成する。Thereafter, the prepared acetate is dissolved in water to create an aqueous acetate solution.
酢酸塩の水に対する溶解度は、例えば次のとおりである
。The solubility of acetate in water is, for example, as follows.
酢酸銅 （：ｕ（ＣＨ３ＣＯｚ）ｚ（ｌｌｚｏ） ７
．２ｇ／１００ｍＡ！（２０℃）酢酸バリウム Ｂａ（
ＣＨｓＣＯＪ ｔＨｔｏ ５８．８ｇ／１００ｍ Ａ
（０℃）酢酸ランタン Ｌａ（ＣＩＩｚＣＯｚ）ｓ４
）１１ｚ０ ２０．４３ｇ／１００ｍ／（１８℃）次に
、上記のように作成した酢酸塩の水溶液を、基板上に、
ロールあるいはスプレー等によって塗布する。Copper acetate (:u(CH3COz)z(llzo) 7
．． 2g/100mA! (20℃) Barium acetate Ba(
CHsCOJ tHto 58.8g/100m A
(0℃) Lanthanum acetate La(CIIzCOz)s4
)11z0 20.43g/100m/(18°C) Next, the acetate aqueous solution prepared as above was placed on the substrate.
Apply by roll or spray.
上記基板の材質としては、用途により種々のものが採用
され、例えば、白金、石英、シリコン、サファイヤ、ガ
ラス、ステンレス等を用いることができる。Various materials can be used for the substrate depending on the purpose, and examples include platinum, quartz, silicon, sapphire, glass, and stainless steel.
次いで、基板上に塗布した酢酸塩の水溶液を常温で１〜
２４時間自然乾燥させた後、さらに１００〜１２０℃で
１〜５時間強制乾燥させて基板上に薄膜状物質を形成せ
しめる。Next, the aqueous solution of acetate coated on the substrate was mixed with
After air drying for 24 hours, forced drying is further performed at 100 to 120° C. for 1 to 5 hours to form a thin film-like substance on the substrate.
この後、基板と共に薄膜状物質を電気炉に入れて空気中
で、２００〜１０００℃の温度で１〜２４時間加熱処理
することにより、基板上に薄膜状の超電導セラミックス
を生成させる。この場合、加熱温度が２００℃以下であ
ると、反応時間が長くなり、また、１０００℃以上であ
ると、基板との反応を生じるおそれがあると共に、粒成
長が生じて均一な膜が形成されなくなるおそれがある。Thereafter, the thin film material is placed in an electric furnace together with the substrate and heat-treated in air at a temperature of 200 to 1000° C. for 1 to 24 hours, thereby producing a thin film of superconducting ceramics on the substrate. In this case, if the heating temperature is below 200°C, the reaction time will be long, and if it is above 1000°C, there is a risk of reaction with the substrate and grain growth will occur, resulting in the formation of a uniform film. There is a risk that it will disappear.
また、上記加熱処理を酸素富化雰囲気中で行なってもよ
い。Further, the above heat treatment may be performed in an oxygen-enriched atmosphere.
以上のようにして、薄膜状の超電導セラミックスが得ら
れるが、超電導セラミックスの厚みをさらに増加させる
場合には、生成された超電導セラミックスの上に、上記
酢酸塩の水溶液をさらに塗布して、上記と同様にして乾
燥後、加熱処理を行なう。In the above manner, a thin film-like superconducting ceramic is obtained, but if the thickness of the superconducting ceramic is to be further increased, the above-mentioned acetate aqueous solution is further applied on top of the produced superconducting ceramic. After drying in the same manner, heat treatment is performed.
（実施例１）
次に、この発明に基づいてＹ−Ｂａ−Ｃｕ−０系の超電
導セラミックスを製造する例を実施例工として示す。(Example 1) Next, an example of manufacturing Y-Ba-Cu-0 based superconducting ceramics based on the present invention will be shown as an example process.
まず、酢酸イツトリウム、酢酸バリウム、酢酸銅を０．
４Ｍｏｊｔｅ 、０．６Ｍｏ＃ｅ 、１．０Ｍｏ／ｅの
配合比率になるように調整した混合水溶液を１００ｇ用
意して十分に混合する。First, add yttrium acetate, barium acetate, and copper acetate to 0.00%.
100 g of a mixed aqueous solution adjusted to have a blending ratio of 4Mojte, 0.6Mo#e, and 1.0Mo/e is prepared and thoroughly mixed.
次いで、上記水溶液を白金箔によって形成された基板上
に塗布した後、常温で８時間自然乾燥させて、さらに１
１０℃にて８時間乾燥させて、基板上に薄膜状物質を形
成させた。Next, the above aqueous solution was applied onto a substrate made of platinum foil, and then air-dried at room temperature for 8 hours, and further coated for 1 hour.
It was dried at 10° C. for 8 hours to form a thin film-like substance on the substrate.
この後、この薄膜状物質を基板と共に電気炉内に入れ、
空気中にて４３００℃で８時間加熱処理した。After that, this thin film material is put into an electric furnace together with the substrate,
Heat treatment was performed at 4300° C. for 8 hours in air.
このようにして形成した基板上の超電導セラミックスの
超電導特性を測定したところ、Ｔｃ＝９０’Ｋ（完全超
電化温度）であった。When the superconducting properties of the superconducting ceramic on the substrate thus formed were measured, it was found that Tc = 90'K (complete superelectricization temperature).
また、１回の塗布で形成された超電導セラミックスの膜
厚は約１μであった。Further, the film thickness of the superconducting ceramic formed by one coating was about 1 μm.
次に、比較例を示す。Next, a comparative example will be shown.
（比較例１）
上記実施例１で用いた原料水溶液を、厚さ０．５鶴のガ
ラス基板上に塗布し、常温で８時間自然乾燥させた後、
次いで１１０℃で８時間強制乾燥させた後、電気炉に入
れて空気中にて１９０℃で２４時間加熱処理した。(Comparative Example 1) The raw material aqueous solution used in Example 1 above was applied onto a 0.5-thick glass substrate, and after naturally drying at room temperature for 8 hours,
Next, after forced drying at 110°C for 8 hours, it was placed in an electric furnace and heat-treated in air at 190°C for 24 hours.
この結果、基板表面に形成された化合物膜の臨界温度を
測定したところ、約２０’にと不十分な値しか得られな
かった。As a result, when the critical temperature of the compound film formed on the substrate surface was measured, an insufficient value of about 20' was obtained.
（比較例２）
上記実施例１で用いた原料水溶液を、厚さ０．３鶴のサ
ファイヤ基板上に塗布し、常温で８時間自然乾燥させた
後、次いで１１０℃で８時間強制乾燥させた後、電気炉
に入れて空気中にて１１００°Ｃで３時間加熱処理した
。(Comparative Example 2) The raw material aqueous solution used in Example 1 above was applied onto a 0.3-thick sapphire substrate, naturally dried at room temperature for 8 hours, and then forcedly dried at 110° C. for 8 hours. Thereafter, it was placed in an electric furnace and heat-treated in air at 1100°C for 3 hours.
この結果、基板表面に形成された化合物膜の臨界温度を
測定したところ、約２０″にと不十分な値しか得られな
かった。As a result, when the critical temperature of the compound film formed on the substrate surface was measured, an insufficient value of about 20'' was obtained.
この発明は、以上のように、超″Ｆｉｔ導セラミックス
の原料を水溶液にして基板に塗布することによって、薄
膜状の超電導セラミックスを容易に製造することができ
る。As described above, according to the present invention, a superconducting ceramic in the form of a thin film can be easily manufactured by applying the raw material of the super-fit conductive ceramic to a substrate in the form of an aqueous solution.
また、上記のように、水溶液の原料を使用するので、取
扱いが容易であると共に、精密に広範囲の組成調整が可
能である。Furthermore, as mentioned above, since raw materials in the form of an aqueous solution are used, handling is easy and the composition can be precisely adjusted over a wide range.
さらに、原料を水溶液の形で混合調整するので、構成元
素の混合が分子レベルで十分に行なわれることになる。Furthermore, since the raw materials are mixed and adjusted in the form of an aqueous solution, the constituent elements are sufficiently mixed at the molecular level.
したがって、従来の粉末焼結法では１２００℃の高温で
の焼結を要していたが、この発明によれば、低温でのＢ
電導セラミックスの形成が可能となると共に高品質の超
電導セラミックスの形成が可能となる。Therefore, the conventional powder sintering method required sintering at a high temperature of 1200°C, but according to this invention, B
It becomes possible to form not only electrically conductive ceramics but also high-quality superconducting ceramics.
さらに、また、原料水溶液の塗布、乾燥、加熱という工
程を繰り返すことによって、形成される膜厚の制御を容
易に行なうことができる効果、もある。Furthermore, by repeating the steps of applying, drying, and heating the raw material aqueous solution, the thickness of the formed film can be easily controlled.
図面はこの発明の製造方法の工程図である。
特許出願人 住友電気工業株式会社
同 代理人 鎌 １） 文 ニ
昭和６３年 ６月２２日
３、補正をする者
事件との関係 特許出願人
住所 大阪市東区北浜５丁目１５番地氏名（名称＞
（２１３）住友電気工業株式会社５゜
６、補正の対象
明細書の「発明の詳細な説明」の欄
補正の内容
（１）明細書第５頁第１行の「２００〜１０００℃」を
ｒ８００〜１０００’ｃＪと補正します。
（２）同第５頁第４行の「２００℃」を「８００℃」と
補正します。
（３）同第６頁第９行の「６００℃」を「９４０〜１０
００℃」と補正しまず。
（４）同第７頁第３行〜第４行の「約２０°にと・・・
・・・得られなかった。」を「超電導を示さなかった。
」と補正します。
（５）同第８頁第４行〜第７行の「従来の粉末焼結法で
は・・・・・・可能となると共に」を削除します。The drawings are process diagrams of the manufacturing method of this invention. Patent applicant: Sumitomo Electric Industries, Ltd. Agent: Kama 1) Written on June 22, 1986 3. Relationship to the case of the person making the amendment Patent applicant address: 5-15 Kitahama, Higashi-ku, Osaka Name
(213) Sumitomo Electric Industries, Ltd. 5゜6, Contents of the amendment in the "Detailed Description of the Invention" column of the specification subject to amendment (1) "200 to 1000°C" in the first line of page 5 of the specification to r800 Corrected to ~1000'cJ. (2) Correct "200℃" in the 4th line of page 5 to ``800℃.'' (3) "600℃" on page 6, line 9 of the same page is changed to "940~10℃"
00℃” first. (4) On page 7, lines 3 and 4, “At about 20 degrees...
...I couldn't get it. " was corrected to "No superconductivity was shown." (5) Delete "It becomes possible with the conventional powder sintering method" on page 8, lines 4 to 7.
Claims (4)
にして基板上に塗布した後、乾燥せしめ、その後空気中
で加熱処理して基板上に超電導セラミックスを形成せし
めることを特徴とする超電導セラミックス薄膜の製造方
法。(1) A superconducting ceramic thin film characterized in that the constituent elements of the superconducting ceramic are made into an aqueous solution of acetate and applied onto a substrate, dried, and then heated in air to form a superconducting ceramic on the substrate. Production method.
特許請求の範囲第１項に記載する超電導セラミックス薄
膜の製造方法。(2) The method for producing a superconducting ceramic thin film according to claim 1, wherein the constituent elements are lanthanum, barium, and copper.
ムのうちの少なくとも一つと、バリウム及び銅との組合
せからなる特許請求の範囲第１項に記載する超電導セラ
ミックス薄膜の製造方法。(3) The method for producing a superconducting ceramic thin film according to claim 1, wherein the constituent elements are a combination of at least one of samarium, selenium, and yttrium, and barium and copper.
ちの少なくとも一つと、ランタン及び銅との組合せから
なる特許請求の範囲第１項に記載する超電導セラミック
ス薄膜の製造方法。(4) The method for producing a superconducting ceramic thin film according to claim 1, wherein the constituent elements are a combination of at least one of calcium and strontium, lanthanum, and copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075175A JPS63239150A (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing superconducting ceramic thin films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62075175A JPS63239150A (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing superconducting ceramic thin films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63239150A true JPS63239150A (en) | 1988-10-05 |
Family
ID=13568604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62075175A Pending JPS63239150A (en) | 1987-03-27 | 1987-03-27 | Method for manufacturing superconducting ceramic thin films |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63239150A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS64615A (en) * | 1987-06-23 | 1989-01-05 | Agency Of Ind Science & Technol | Manufacture of oxide superconducting wire material |
| JPS6448325A (en) * | 1987-04-10 | 1989-02-22 | American Telephone & Telegraph | Manufacture of superconducting material layer |
| JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
| JPS6465003A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Superconductive material and production thereof |
| WO1990009670A1 (en) * | 1989-02-14 | 1990-08-23 | Sumitomo Electric Industries, Ltd. | Insulated electric wire |
| WO1990011603A1 (en) * | 1989-03-28 | 1990-10-04 | Sumitomo Electric Industries, Ltd. | Insulated electric wire |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285609A (en) * | 1985-06-13 | 1986-12-16 | 日本曹達株式会社 | Lead titanate ferrodielectric thin film and manufacture thereof |
-
1987
- 1987-03-27 JP JP62075175A patent/JPS63239150A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61285609A (en) * | 1985-06-13 | 1986-12-16 | 日本曹達株式会社 | Lead titanate ferrodielectric thin film and manufacture thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6465007A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Starting material solution for superconductive material |
| JPS6465003A (en) * | 1987-01-30 | 1989-03-10 | Agency Ind Science Techn | Superconductive material and production thereof |
| JPH0476324B2 (en) * | 1987-01-30 | 1992-12-03 | Kogyo Gijutsuin | |
| JPH0476323B2 (en) * | 1987-01-30 | 1992-12-03 | Kogyo Gijutsuin | |
| JPS6448325A (en) * | 1987-04-10 | 1989-02-22 | American Telephone & Telegraph | Manufacture of superconducting material layer |
| JPS64615A (en) * | 1987-06-23 | 1989-01-05 | Agency Of Ind Science & Technol | Manufacture of oxide superconducting wire material |
| WO1990009670A1 (en) * | 1989-02-14 | 1990-08-23 | Sumitomo Electric Industries, Ltd. | Insulated electric wire |
| US5091609A (en) * | 1989-02-14 | 1992-02-25 | Sumitomo Electric Industries, Ltd. | Insulated wire |
| WO1990011603A1 (en) * | 1989-03-28 | 1990-10-04 | Sumitomo Electric Industries, Ltd. | Insulated electric wire |
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