JPS63236012A - Driving method of electro-optical device - Google Patents
Driving method of electro-optical deviceInfo
- Publication number
- JPS63236012A JPS63236012A JP7100587A JP7100587A JPS63236012A JP S63236012 A JPS63236012 A JP S63236012A JP 7100587 A JP7100587 A JP 7100587A JP 7100587 A JP7100587 A JP 7100587A JP S63236012 A JPS63236012 A JP S63236012A
- Authority
- JP
- Japan
- Prior art keywords
- electro
- optical device
- liquid crystal
- driving
- ferroelectric liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 14
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は液晶を用いた電気光学装置の駆動方法に関する
。更に詳しくは、強誘電性液晶を用いた光シヤツターア
レイ、画像表示装置あるいはキャラクタ−表示装置など
の電気光学装置のアクティブマトリクス駆動に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for driving an electro-optical device using liquid crystal. More specifically, the present invention relates to active matrix driving of electro-optical devices such as optical shutter arrays, image display devices, and character display devices using ferroelectric liquid crystals.
双安定性を有する強誘電性液晶を用いたマトリクス電極
構造を有する液晶電気光学装置にイ;1いては、例えば
クラークらの米国特許第43<3792 。Regarding a liquid crystal electro-optical device having a matrix electrode structure using a ferroelectric liquid crystal having bistability, for example, US Pat. No. 43,3792 by Clark et al.
4号に記載されている。また、前記強誘電性液晶とアク
ティブ素子を組み合わせた電気光学装置に付いても例え
ば特開昭6l−0625号公報に記載されている。この
電気光学装置の駆動方法は走査電極群に、順次、周期的
にアドレス信号を選択印加し、信号電極群には侑定の情
報信号をアドレス信じとどう着させて並列的に選択印加
する時分割駆動を採用していた。It is stated in No. 4. Further, an electro-optical device combining the ferroelectric liquid crystal and an active element is also described in, for example, Japanese Patent Laid-Open No. 61-0625. The driving method of this electro-optical device is to selectively and periodically apply address signals to a group of scanning electrodes, and selectively apply predetermined information signals in parallel to a group of signal electrodes in a manner that corresponds to the address. It used a split drive.
上記アクティブ素子を用いた電気光学装置の駆動方法で
は、走査電極群に順次印加されるアドレス信号は前記強
誘電性液晶自体の応答時間以上の時間印加されている。In the above method for driving an electro-optical device using an active element, the address signals sequentially applied to the scanning electrode group are applied for a time longer than the response time of the ferroelectric liquid crystal itself.
従って、電気光学装置の1画面分を走査するに要する時
間は、(強誘電性液晶の応答時間)X(走査線数)以上
となり、例えばビジネスユース用の16ビツトCPUを
採用したパーソナルコンピューター用の640X400
ドツトを持ったディスプレイの場合、応答時間が150
μsの強誘電性液晶を使用すれば、1画面の走査時間は
60〜120m5となり高速で変化する画面の表示は不
可能であった。Therefore, the time required to scan one screen of an electro-optical device is equal to or more than (response time of ferroelectric liquid crystal) x (number of scanning lines). 640X400
For displays with dots, the response time is 150
If a microsecond ferroelectric liquid crystal was used, the scanning time for one screen would be 60 to 120 m5, making it impossible to display a screen that changes at high speed.
本発明は上記問題点を解決するために、(1) マト
リクス状に配置された複数の画素電極及びその各々に対
応してアクティブ素子を複数設けた第一基板と前記画素
電極に対向する対向電極を設けた第二基板を有し、前記
画素電極と対向電極の間に電界に対して双安定状態を有
する強誘電性液晶を挟持した構造の電気光学装置の駆動
方法において、走査電極群に順次印加されるアドレス信
号のアドレス時間が、前記強誘電性液晶自体の応答時間
よりも短いことを特徴とする。In order to solve the above problems, the present invention provides (1) a first substrate having a plurality of pixel electrodes arranged in a matrix and a plurality of active elements corresponding to each of the pixel electrodes; and a counter electrode facing the pixel electrodes. In the driving method of an electro-optical device having a structure in which a ferroelectric liquid crystal having a bistable state with respect to an electric field is sandwiched between the pixel electrode and the counter electrode, the second substrate is provided with a scanning electrode group. The present invention is characterized in that the address time of the applied address signal is shorter than the response time of the ferroelectric liquid crystal itself.
以下に実施例を挙げて本発明のアクティブ素子と強誘電
性液晶を用いた電気光学装置の駆動方法を説明する。Hereinafter, a method for driving an electro-optical device using an active element and a ferroelectric liquid crystal according to the present invention will be described with reference to Examples.
〔実施例1〕
第1図は本発明における金属−絶縁体−金属構造を有す
る非線形素子(以下、MIMと呼ぶ)を用いたアクティ
ブマトリクスの一部分を示す回路図で、走査電極群1と
信号電極群2は、MI’M3と画素電極上の液晶の容量
分4で接続されてマトリクスを形成している。このMI
Mは素子の両端に電圧Vを印加した時、素子を通って流
れる電流Iが
1:KV@ exp (βv” ’ ” >
で表わされる双方向ダイオード特性を示す。[Example 1] FIG. 1 is a circuit diagram showing a part of an active matrix using a nonlinear element having a metal-insulator-metal structure (hereinafter referred to as MIM) according to the present invention. Group 2 is connected to MI'M3 by a capacitance 4 of the liquid crystal on the pixel electrode to form a matrix. This MI
M is such that when a voltage V is applied across the element, the current I flowing through the element is 1: KV @ exp (βv'''''>
This shows the bidirectional diode characteristics expressed by .
ここて1くは電流の流れ易さ、βは非線形性を現わす係
数である。第1図に示すマトリクスの一部を第2図に示
すような表示状報にするためには、例えば第3図に示す
ような各信号を印加ずればよい。第31;Zl(a)は
走査電極群1(Cn〜Cn+、)に印加される走査信号
、第3図(1))は信号電極IT’2 (Sm−3m+
* )に印加される情報信号であり、その結果各画素
には第3図(C)に示す信号波形が印加される。Here, the first factor is the ease of current flow, and β is a coefficient representing nonlinearity. In order to display a part of the matrix shown in FIG. 1 as a display status information as shown in FIG. 2, it is sufficient to apply signals as shown in FIG. 3, for example. 31st; Zl(a) is the scanning signal applied to the scanning electrode group 1 (Cn to Cn+, ), and FIG. 3(1)) is the signal electrode IT'2 (Sm-3m+
* ), and as a result, a signal waveform shown in FIG. 3(C) is applied to each pixel.
画素数E340X400ドツトのT a T at
Os CtlMNのMIMを用いたマトリクス基板を
用いて、2μmギャップのセルをつくり、強誘電性液晶
として、20@C,±5■で約1msの応答を示すチッ
ソ(株)製のCS −1015を封入し電気光学装置と
した。この電気光学装置に、第3図の選択時間t−80
μs1ずなわち1フレームの時間か32m51画素部分
に印加される電圧Vp−p=50Vの駆動信号を印加し
たところ、正常に動作し、コントラスト比l:30が得
られた。Ta Tat with pixel count E340x400 dots
A cell with a gap of 2 μm was made using a matrix substrate using MIM of Os CtlMN, and CS-1015 manufactured by Chisso Corporation, which has a response of about 1 ms at 20@C, ±5■, was used as a ferroelectric liquid crystal. It was sealed to form an electro-optical device. In this electro-optical device, the selection time t-80 shown in FIG.
When a drive signal of voltage Vp-p=50V was applied to a pixel portion of 32m51 for a period of 1 μs, that is, 1 frame, the device operated normally and a contrast ratio of 1:30 was obtained.
本実施例ではMIMを用いたが、他の2喘子素子、例え
ばアモルファスシリコンを用いた双方向性ダイオード、
酸化亜鉛を用いたバリスフなど非線形性を有する素子な
らば同様な動作をすることは明らかである。Although MIM was used in this example, other two-layer elements such as bidirectional diodes using amorphous silicon,
It is clear that an element with nonlinearity, such as a Varisf using zinc oxide, operates in a similar manner.
〔実施例2〕
第4図は本発明における他の実施例で、アクティブ素子
としてTPTを用いたアクティブマトリクスの一部分を
示す回路図で、走査電極群5と信号電極群6は、同一基
板上でT I” T 7のゲートおよびソース電極を通
じてマトリクスを形成し、画素電極上の液晶の容量分8
は対向基板O上の共通電極10に接続されている。第5
図は本実施例で用いたT E Tパネルの構造で、石英
基板11−ヒに形成されたポリシリコン12、前記ポリ
シリコン12を熱酸化して得られたゲート絶縁膜13、
ポリシリコンゲート14より構成されるT I” Tの
上にS s Ox層間絶縁膜15を形成する。更に、コ
ンタクトポールを開け、信号線10および画素電極17
を形成しTPT基板とする。このTPT基板と対向電極
9を設けた対向基板10を2μmの間吋:を保ってセル
とし、液晶18を注入する。セルの外側の両面に偏光板
19.20を張り付けて電気光学装置とする。[Embodiment 2] FIG. 4 is another embodiment of the present invention, and is a circuit diagram showing a part of an active matrix using TPT as an active element, in which the scanning electrode group 5 and the signal electrode group 6 are arranged on the same substrate. A matrix is formed through the gate and source electrodes of T I” T7, and the capacitance of liquid crystal on the pixel electrode is
is connected to the common electrode 10 on the counter substrate O. Fifth
The figure shows the structure of the TET panel used in this example, which includes a polysilicon 12 formed on a quartz substrate 11-A, a gate insulating film 13 obtained by thermally oxidizing the polysilicon 12,
An S s Ox interlayer insulating film 15 is formed on the T I”T formed by the polysilicon gate 14 .Furthermore, contact poles are opened, and the signal line 10 and the pixel electrode 17 are formed.
is formed to form a TPT substrate. This TPT substrate and a counter substrate 10 provided with a counter electrode 9 are used as a cell with a gap of 2 μm maintained, and a liquid crystal 18 is injected into the cell. Polarizing plates 19 and 20 are pasted on both outer sides of the cell to form an electro-optical device.
前記構造をtQった320X240ドツトの電気光学装
置の一部を第2図に示した表示軟融にするため、第6図
に示すような選択時間【=lOμs1データ電圧±5■
の駆動波形を印加したところコントラスト比1:50が
得られた。In order to soften the display of a part of the 320×240 dot electro-optical device shown in FIG. 2 with the above structure tQ, the selection time [=lOμs1 data voltage ±5μ] as shown in FIG.
When the following driving waveform was applied, a contrast ratio of 1:50 was obtained.
〔実施例3〕 。[Example 3].
実施例2で用いた電気光学装置に第7図に示すような駆
動波形を印加した。すなわち、選IR時間t:==12
.G3usにし、llフレームを1組として連続して出
る同極性パルス数を0〜11まで変化させたところ、1
2階調が確認できた。この結果から、”1間階調によっ
て通常のTV用の階調表示ができることが分かった。A driving waveform as shown in FIG. 7 was applied to the electro-optical device used in Example 2. That is, selection IR time t:==12
.. When using G3us and changing the number of consecutive same polarity pulses from 0 to 11 with ll frames as one set, 1
Two gradations were confirmed. From this result, it was found that gradation display for normal TV can be performed using 1-interval gradation.
〔実施例4〕
シリコンウェファ−」二に、通常のICプロセスでCM
OS −F E Tを形成し、画素電極をAIて(X
1+i成し、画素ピッチG3.5XO3,5μmv画素
数320X240Fット、対角線方向の寸法25、/1
mmのアクティブマトリクス基板とした。[Example 4] Second, CM was applied to a silicon wafer using a normal IC process.
OS-FET is formed, and the pixel electrode is made of AI (X
1+i, pixel pitch G3.5XO3, 5μmv pixel number 320X240F, diagonal dimension 25, /1
It was made into an active matrix substrate of mm.
この基板を用い、セル厚が1μmの反射型パネルを作り
液晶を注入して、上面に偏光板を1枚張りイ1けた電気
光学装置にした。この電気光学装置を選択時間t=8.
E3msで駆動したところ16階調が表示可能であった
。Using this substrate, a reflective panel with a cell thickness of 1 μm was made, liquid crystal was injected, and a single polarizing plate was pasted on the top surface to create a single-digit electro-optical device. This electro-optical device was selected for a time t=8.
When driven at E3ms, 16 gradations could be displayed.
上記の(?4造よりなる本発明の強誘電性液晶を用いた
電気光学装置の駆動方法を用いることにより、画素数の
多い大画面の表示を高速で動かしたり、TV画像を時間
階調で表示することが可能となる。By using the method for driving an electro-optical device using the ferroelectric liquid crystal of the present invention, which is composed of the above-mentioned It becomes possible to display.
第1図は本発明に用いたMIMアクティブマトリクスの
一部分を示す図。第2図は本発明ての表示例を示す図。
第3図は第2図の表示例を得るための駆動波形の一例を
挙げた図。第4図は本発明のT l” Tアクティブマ
トリクスの一部分を示ず図。第5図はT P Tを用い
たパネルの+1+rI造の一例を示す図。第6図はTP
Tを用いたパネルの駆動波形例を示す図。第7図は本発
明の階調表示をするための駆動波形例を示す図。
■・・・走査電極群
2・・・信号電極群
3・・・MIM素子
4・・・画素電極上の液晶の容量分
5・・・走査電極群
6・・・信号電極群
7・・・TPT
8・・・画素電極上の液晶の容量分
9・・・対向基板
10・・・対向電極
11・・・石英基板
12・・・ポリシリコン
13・・・ゲート絶縁膜
14・・・ポリシリコンゲート
15・・・層間絶縁膜
1G・・・信号線
17・・・画素電極
以 上
SS S、+I S浦ヤ2
第2図
第3図(a)
第3図(b)
戦 %+1 qh+2
第3図(C)
第6図
フし−へ
第7図FIG. 1 is a diagram showing a part of the MIM active matrix used in the present invention. FIG. 2 is a diagram showing an example of display according to the present invention. FIG. 3 is a diagram showing an example of a drive waveform for obtaining the display example shown in FIG. 2. FIG. 4 is a diagram showing a part of the T l"T active matrix of the present invention, with no part shown. FIG. 5 is a diagram showing an example of +1+rI construction of a panel using T P T.
The figure which shows the example of a drive waveform of the panel using T. FIG. 7 is a diagram showing an example of a driving waveform for displaying gradation according to the present invention. ■...Scanning electrode group 2...Signal electrode group 3...MIM element 4...Liquid crystal capacitance on pixel electrode 5...Scanning electrode group 6...Signal electrode group 7... TPT 8...capacitance of liquid crystal on pixel electrode 9...counter substrate 10...counter electrode 11...quartz substrate 12...polysilicon 13...gate insulating film 14...polysilicon Gate 15...Interlayer insulating film 1G...Signal line 17...More than pixel electrode SS S, +IS Uraya 2 Figure 2 Figure 3 (a) Figure 3 (b) %+1 qh+2
Figure 3 (C) To Figure 6 Flip Figure 7
Claims (3)
の各々に対応してアクティブ素子を複数設けた第一基板
と前記画素電極に対向する対向電極を設けた第二基板を
有し、前記画素電極と対向電極の間に電界に対して双安
定状態を有する強誘電性液晶を挟持した構造の電気光学
装置の駆動方法において、走査電極群に順次印加される
アドレス信号のアドレス時間が、前記強誘電性液晶自体
の応答時間よりも短いことを特徴とする電気光学装置の
駆動方法。(1) A first substrate provided with a plurality of pixel electrodes arranged in a matrix and a plurality of active elements corresponding to each of the pixel electrodes, and a second substrate provided with a counter electrode facing the pixel electrodes; In a method for driving an electro-optical device having a structure in which a ferroelectric liquid crystal having a bistable state with respect to an electric field is sandwiched between an electrode and a counter electrode, the address time of an address signal sequentially applied to a group of scanning electrodes is A method for driving an electro-optical device characterized by a response time shorter than that of a dielectric liquid crystal itself.
素子であることを特徴とする特許請求の範囲第1項に記
載の電気光学装置の駆動方法。(2) The method for driving an electro-optical device according to claim 1, wherein the active element is a nonlinear element having a two-terminal structure.
する特許請求の範囲第1項に記載の電気光学装置の駆動
方法。(3) The method for driving an electro-optical device according to claim 1, wherein the active element is a FET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7100587A JPS63236012A (en) | 1987-03-25 | 1987-03-25 | Driving method of electro-optical device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7100587A JPS63236012A (en) | 1987-03-25 | 1987-03-25 | Driving method of electro-optical device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63236012A true JPS63236012A (en) | 1988-09-30 |
Family
ID=13447954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7100587A Pending JPS63236012A (en) | 1987-03-25 | 1987-03-25 | Driving method of electro-optical device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63236012A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02253293A (en) * | 1989-03-27 | 1990-10-12 | Canon Inc | Display device |
JPH03271716A (en) * | 1990-03-22 | 1991-12-03 | Canon Inc | Driving method and driving device for active matrix liquid crystal element |
US5363225A (en) * | 1991-11-11 | 1994-11-08 | Sharp Kabushiki Kaisha | Liquid crystal element and driving method thereof including multi-value signal which ends at zero volts |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
-
1987
- 1987-03-25 JP JP7100587A patent/JPS63236012A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02253293A (en) * | 1989-03-27 | 1990-10-12 | Canon Inc | Display device |
JPH03271716A (en) * | 1990-03-22 | 1991-12-03 | Canon Inc | Driving method and driving device for active matrix liquid crystal element |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
US5363225A (en) * | 1991-11-11 | 1994-11-08 | Sharp Kabushiki Kaisha | Liquid crystal element and driving method thereof including multi-value signal which ends at zero volts |
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