JPS63227056A - image sensor - Google Patents
image sensorInfo
- Publication number
- JPS63227056A JPS63227056A JP62060164A JP6016487A JPS63227056A JP S63227056 A JPS63227056 A JP S63227056A JP 62060164 A JP62060164 A JP 62060164A JP 6016487 A JP6016487 A JP 6016487A JP S63227056 A JPS63227056 A JP S63227056A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- transparent conductive
- common electrode
- lower common
- image sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002834 transmittance Methods 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概 要〕
水素化アモルファスシリコン膜を挟んで下部共通電極と
上部個別電極を設けたイメージセンサであって、該個別
電極には高透過率をもつ透明導電膜と低透過率をもつ透
明導電膜を用い、該低透過率をもつ透明導電膜の共通電
極に対向する部分を除去していることにより個別電極か
らの不要な光の回り込みを防止し原稿読み取りの分解能
の向上を可能とした。[Detailed Description of the Invention] [Summary] An image sensor comprising a lower common electrode and an upper individual electrode with a hydrogenated amorphous silicon film sandwiched therebetween, the individual electrodes having a transparent conductive film with high transmittance and a transparent conductive film with low transmittance. By using a transparent conductive film with low transmittance and removing the portion of the transparent conductive film that faces the common electrode, unnecessary light is prevented from going around from the individual electrodes and the resolution of document reading is improved. This made it possible to improve.
本発明はファクシミリ、イメージスキャナ等に用いられ
るイメージセンサに関するもので、さらに詳しく言えば
アモルファスシリコン膜（ａ −３ｉ：Ｈ）を用いたイ
メージセンサの改良に関するものである。The present invention relates to an image sensor used in facsimiles, image scanners, etc., and more specifically, to an improvement in an image sensor using an amorphous silicon film (a-3i:H).
従来のａ−３ｉ：Ｈを用いた表面風光型イメージセンサ
は第２図に示すように、基板１上に形成された帯状の下
部共通電極２の上に活性層となるａ−３ｉ：Ｈ膜３を介
して形成された上部透明個別電極４からなる複数のダイ
オードによって構成されている。As shown in FIG. 2, a conventional surface-type image sensor using a-3i:H includes an a-3i:H film, which serves as an active layer, on a band-shaped lower common electrode 2 formed on a substrate 1. It is constituted by a plurality of diodes consisting of upper transparent individual electrodes 4 formed through 3.
上記従来のａ−Ｓｉ：Ｈを用いたイメージセンサでは、
工程簡略化及びフォトリソグラフィ工程の削減のためａ
−３ｉ：Ｈ膜２の堆積時にメタルマスクを用いているた
め、ダイオードの素子部以外の個別電極３の下部（第２
図ａにおいて斜線を施して示した部分）にもａ−３ｉ：
Ｈ膜が存在する。このためダイオードの光電流は斜線部
からのまわり込み電流によって増大し、イメージセンサ
としての原稿読み取り分解能が低下するという欠点があ
った。In the above conventional image sensor using a-Si:H,
To simplify the process and reduce the photolithography process a.
-3i: Since a metal mask is used during the deposition of the H film 2, the lower part of the individual electrode 3 (the second
The shaded part in Figure a) also includes a-3i:
H film is present. For this reason, the photocurrent of the diode increases due to the wrap-around current from the shaded area, resulting in a disadvantage that the document reading resolution as an image sensor is reduced.
本発明はこのような点にかんがみて創作されたもので、
ダイオード素子以外からの回り込み電流を防止したイメ
ージセンサを提供することを目的としている。The present invention was created in view of these points.
It is an object of the present invention to provide an image sensor that prevents wraparound current from flowing from sources other than diode elements.
〔問題点を解決するための手段〕
このため本発明においては、第１図に例示するように、
絶縁性基板１０の上に形成された帯状の下部共通電極１
１と、該下部共通電極１１を覆って形成された水素化ア
モルファスシリコン（ａ −３ｉ：Ｈ）からなる活性層
１２と、該活性層１２を挟んで前記下部共通電極１１に
交差した複数個の上部個別電極１３を具備したイメージ
センサにおいて、上記上部個別電極１３は高透過率をも
つ透明導電膜１３ａと、低透過率をもつ透明導電膜１３
ｂとよりなり、該低透過率の透明導電膜１３ｂは下部共
通電極１１に対向する部分が除去されていることを特徴
としている。[Means for solving the problem] Therefore, in the present invention, as illustrated in FIG.
A band-shaped lower common electrode 1 formed on an insulating substrate 10
1, an active layer 12 made of hydrogenated amorphous silicon (a-3i:H) formed to cover the lower common electrode 11, and a plurality of active layers 12 intersecting the lower common electrode 11 with the active layer 12 in between. In an image sensor equipped with an upper individual electrode 13, the upper individual electrode 13 includes a transparent conductive film 13a having high transmittance and a transparent conductive film 13 having low transmittance.
The low transmittance transparent conductive film 13b is characterized in that the portion facing the lower common electrode 11 is removed.
上部個別電極１３のダイオード部分以外の部分を高透過
率をもつ透明導電膜１３ａと低透過率をもつ透明導電膜
１３ｂの２層構造としたことにより核部から光の透過に
よる光電流のまわり込みを防止することが可能となる。Since the portion of the upper individual electrode 13 other than the diode portion has a two-layer structure consisting of a transparent conductive film 13a with high transmittance and a transparent conductive film 13b with low transmittance, the photocurrent can be wrapped around due to the transmission of light from the core portion. This makes it possible to prevent
第１図は本発明の実施例を示す図である。 FIG. 1 is a diagram showing an embodiment of the present invention.
本実施例は同図に示すように、ガラス等の基板１０の上
に真空蒸着法により約１０００人の厚さに蒸着したＣｒ
をフォトリソグラフィ工程により帯状にパターン形成し
た下部共通電極１１と、その上にＰ−ＣＶＤ法によりａ
−Ｓｉ：Ｈを約１ｕｍの厚さに形成した活性層１２と、
その上に形成した上部個別電極１３とよりなることは従
来と同様であり、本実施例の要点は上部個別電極１３を
２層構造としたことである。すなわち、上部個別電極１
３として厚さ約１０００人の高透過率透明導電膜１３ａ
と厚さ約２０００人の低透過率透明導電膜１３ｂの２層
構造とし、その低透過率透明導電膜１３ｂの下部共通電
極１１に対向する部分を除去している。As shown in the figure, in this embodiment, Cr is deposited to a thickness of about 1000 by vacuum evaporation on a substrate 10 made of glass or the like.
A lower common electrode 11 is formed into a band-like pattern by a photolithography process, and a
- an active layer 12 formed of Si:H to a thickness of about 1 um;
The upper individual electrode 13 formed thereon is similar to the conventional structure, and the key point of this embodiment is that the upper individual electrode 13 has a two-layer structure. That is, the upper individual electrode 1
3, a high transmittance transparent conductive film 13a with a thickness of approximately 1000 mm.
The low transmittance transparent conductive film 13b has a two-layer structure with a thickness of about 2,000 layers, and the portion of the low transmittance transparent conductive film 13b facing the lower common electrode 11 is removed.
なおこの２層構造の上部個別電極１３にはＩＴ○（酸化
インジニウム錫）等の高透過率透明導電膜を用いること
ができる。その場合には蒸着速度、蒸着真空度等の蒸着
条件を変えることにより透過率を大きく変化させること
ができる（膜の結合酸素量を少なくすれば金属化して低
透過率となる）ので、高透過率透明導電膜１３ａと低透
過率透明導電膜１３ｂとを連続形成することができる。Note that a high transmittance transparent conductive film such as IT◯ (indinium tin oxide) can be used for the upper individual electrode 13 of this two-layer structure. In that case, the transmittance can be greatly changed by changing the deposition conditions such as the deposition rate and the degree of vacuum. The low transmittance transparent conductive film 13a and the low transmittance transparent conductive film 13b can be formed continuously.
そして成膜後フォトリソグラフィ工程で個別電極に形成
後、さらにフォトリソグラフィ工程で低透過率透明導電
膜１３ｂの下部共通電極に対向した部分を除去すること
により第１図に示した構造としたことができ、上部個別
電極からの光電流の回り込みを防止することが可能とな
る。Then, after forming individual electrodes in a photolithography process after film formation, the structure shown in FIG. This makes it possible to prevent the photocurrent from going around from the upper individual electrode.
以上述べてきたように、本発明によれば、上部個別電極
を高透過率の導電膜と低透過率の導電膜の２層構造とし
たことにより光電流の回り込みを防止して原稿読み取り
の解像力を向上することができ、且つ従来に比して製作
工程をあまり増加させずに製造することができ実用的に
は極めて有用である。As described above, according to the present invention, the upper individual electrode has a two-layer structure consisting of a conductive film with high transmittance and a conductive film with low transmittance, thereby preventing photocurrent from going around and improving the resolution of document reading. The present invention is extremely useful in practical terms because it can improve the manufacturing process and can be manufactured without increasing the number of manufacturing steps much compared to the conventional method.
第１図は本発明の実施例を示す図、
第２図は従来のａ−３ｉ；Ｈを用いたイメージセンサを
示す図である。
第１図において、
ＩＯは基板、
１１は下部共通電極、
１２は活性層（ａ−３ｉ：Ｈ）、
１３は上部個別電極、
１３ａは高透過率透明導電膜、
１３ｂは低透過率透明導電膜である。FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing an image sensor using a conventional a-3i;H. In FIG. 1, IO is a substrate, 11 is a lower common electrode, 12 is an active layer (a-3i:H), 13 is an upper individual electrode, 13a is a high transmittance transparent conductive film, 13b is a low transmittance transparent conductive film It is.
Claims (1)
電極（１１）と、該下部共通電極（１１）を覆って形成
された水素化アモルファスシリコン（ａ−Ｓｉ：Ｈ）か
らなる活性層（１２）と、該活性層（１２）を挟んで前
記下部共通電極（１１）に交差した複数個の上部個別電
極（１３）を具備したイメージセンサにおいて、上記上
部個別電極（１３）は高透過率をもつ透明導電膜（１３
ａ）と、低透過率をもつ透明導電膜（１３ｂ）とよりな
り、該低透過率の透明導電膜（１３ｂ）は下部共通電極
（１１）に対向する部分が除去されていることを特徴と
したイメージセンサ。 ２、上記下部共通電極（１１）には金属を用い、上部個
別電極（１３）にはＩＴＯ（酸化インジニウム錫）を用
いたことを特徴とした特許請求の範囲第１項記載のイメ
ージセンサ。[Claims] 1. A strip-shaped lower common electrode (11) formed on an insulating substrate (10), and hydrogenated amorphous silicon (a-Si) formed covering the lower common electrode (11). :H) and a plurality of upper individual electrodes (13) intersecting the lower common electrode (11) with the active layer (12) in between. The electrode (13) is a transparent conductive film (13) with high transmittance.
a) and a transparent conductive film (13b) with low transmittance, and the transparent conductive film (13b) with low transmittance is characterized in that a portion facing the lower common electrode (11) is removed. image sensor. 2. The image sensor according to claim 1, wherein the lower common electrode (11) is made of metal, and the upper individual electrode (13) is made of ITO (indium tin oxide).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62060164A JPS63227056A (en) | 1987-03-17 | 1987-03-17 | image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62060164A JPS63227056A (en) | 1987-03-17 | 1987-03-17 | image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63227056A true JPS63227056A (en) | 1988-09-21 |
Family
ID=13134241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62060164A Pending JPS63227056A (en) | 1987-03-17 | 1987-03-17 | image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63227056A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214276A (en) * | 1990-11-13 | 1993-05-25 | Sumitomo Electric Indsutries, Ltd. | Semiconductor structure for photodetector |
-
1987
- 1987-03-17 JP JP62060164A patent/JPS63227056A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5214276A (en) * | 1990-11-13 | 1993-05-25 | Sumitomo Electric Indsutries, Ltd. | Semiconductor structure for photodetector |
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