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JPS63219137A - Plasma treatment device - Google Patents

Plasma treatment device

Info

Publication number
JPS63219137A
JPS63219137A JP62052154A JP5215487A JPS63219137A JP S63219137 A JPS63219137 A JP S63219137A JP 62052154 A JP62052154 A JP 62052154A JP 5215487 A JP5215487 A JP 5215487A JP S63219137 A JPS63219137 A JP S63219137A
Authority
JP
Japan
Prior art keywords
wafer
guide
raised
lower electrode
electrode unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62052154A
Other languages
Japanese (ja)
Inventor
Norimichi Mitomi
三富 至道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62052154A priority Critical patent/JPS63219137A/en
Publication of JPS63219137A publication Critical patent/JPS63219137A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To suppress the generation of dust in a treatment chamber as well as to let a wafer pressing means to accurately press the orientation flat part of a wafer by a method wherein the alignment means of a lower electrode unit is provided outside a treatment chamber, and a rotation-preventing means is provided on the wafer pressing means. CONSTITUTION:A closed ring 12 is raised by a closed-ring driving unit 13 when a wafer 3 is set on a sample stand 2, the closed ring 12 is closely contacted to the cover plate 21 of a treatment chamber and vacuum-isolated from the outside. The lower electrode unit 1 is raised using a plurality of guide rollers 14 as a guide, and a wafer pressing means 15 is pushed up using a guide link 18 as a guide. The wafer pressing means 15, having the shape similar to the outer circumference of the wafer 3, is raised by the guide of a plurality of rotation stop rods 17, and the wafer pressing part 15a is raised to the position having the prescribed electrode interval while it is pressing the wafer 3 at a correct position.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、プラズマ処理装置に関し、とりわけ、半導
体ウェハの成膜プロセスに使用されるプラズマ処理装置
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma processing apparatus, and particularly to a plasma processing apparatus used in a film forming process of a semiconductor wafer.

〔従来の技術〕[Conventional technology]

第5図は、たとえば特開昭61−110432号公報に
示された従来のプラズマ処理装置であり、図において、
下部電極ユニット(1)の一部を試料台(2)が構成し
ている。ウェハ(3)はウエノ・押え部(4a)を有す
るウェハ押え具(4)で押えられる。(5)はウェハ押
え具(4)のストッパである。ウェハ押え具(4)の自
動調芯手段(6)には調芯具(7)が複数配置されてい
て、ウェハ押え具(4)をガイドする。(7a)は調芯
具(7)の調芯カムで、ガイドローラ(8)が係合する
FIG. 5 shows a conventional plasma processing apparatus disclosed in, for example, Japanese Unexamined Patent Publication No. 110432/1983, and in the figure,
A sample stage (2) constitutes a part of the lower electrode unit (1). The wafer (3) is held down by a wafer holding device (4) having a wafer holding portion (4a). (5) is a stopper for the wafer holding tool (4). A plurality of centering tools (7) are arranged in the automatic centering means (6) of the wafer holding tool (4), and guide the wafer holding tool (4). (7a) is an alignment cam of the alignment tool (7), with which the guide roller (8) engages.

(9)は調芯具(7)の取付金具である。(9) is a mounting bracket for the alignment tool (7).

以上の構成により、ウェハ(3)をプラズマ処理するた
め下部電極ユニット(1)を上昇させると、調芯カム(
7a)とガイドローラ(8)の保合により試料台(2)
が調芯されると同時に調芯具(7)がウエノ・押え具(
4)をガイドする。その結果として、ウエノ・(3)と
ウェハ押え部(4a)を調芯し、ウニ/−(31のプラ
ズマ処理が行われる。
With the above configuration, when the lower electrode unit (1) is raised to perform plasma processing on the wafer (3), the alignment cam (
7a) and the guide roller (8), the sample stage (2)
At the same time as the centering tool (7) is aligned, the centering tool (7)
4) Guide. As a result, Ueno (3) and wafer holding part (4a) are aligned, and plasma processing of Ueno (31) is performed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のプラズマ処理装置は以上のように構成されている
ので、繰返し運転する間にウエノ1押え具(4)がわず
かづつ回転するため、ウェハ押え具(4)でウェハ(3
)のオリエンテーションフラット部(以下オリフラ部と
略称する)を合わすことができなかった。また、試料台
(2)の調芯を処理室内で行うため発塵を伴うなどの問
題点があった。
Since the conventional plasma processing apparatus is configured as described above, the wafer 1 holder (4) rotates slightly during repeated operations, so the wafer 1 holder (4) holds the wafer (3).
) could not be aligned with the orientation flat part (hereinafter referred to as orientation flat part). In addition, since alignment of the sample stage (2) is performed within the processing chamber, there are problems such as dust generation.

この発明は上記の問題点を解消するためになされたもの
で、ウェハ押え具の回転を防止することによりウェハ押
え具のウェハ押え部の内周形状をオリフラ部を含めたウ
ェハの外形形状と一致させると同時に、試料台の調芯機
構を処理室外に設けて°発塵な抑止することができるプ
ラズマ処理装置を得ることを目的とする。
This invention was made to solve the above problem, and by preventing the rotation of the wafer holder, the inner peripheral shape of the wafer holding part of the wafer holder matches the outer shape of the wafer including the orientation flat part. It is an object of the present invention to provide a plasma processing apparatus in which dust generation can be suppressed by providing an alignment mechanism for a sample stage outside the processing chamber.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係るプラズマ処理装置は、ウェハ押え具のウ
ェハ押え部の形状をオリフラ部を含めたつ)エバ外形形
状と合わせ、ウェハ押え具の回転防止のため複数個の回
り止め棒を配設した。また、試料台の調芯のため下部i
lIl二極ットの処理室の下部に複数個のガイドローラ
が配設されている。
In the plasma processing apparatus according to the present invention, the shape of the wafer holding part of the wafer holding tool is matched with the outer shape of the evaporator (including the orientation flat part), and a plurality of anti-rotation rods are provided to prevent rotation of the wafer holding tool. In addition, for aligning the sample stage, the lower i
A plurality of guide rollers are disposed at the bottom of the processing chamber of the IIl bipolar unit.

〔作 用〕[For production]

この発明においては、試料台の調芯手段が処理室外部に
設ゆでいるため、処理室内の発塵が抑止される。また、
ウェハ押え具を回り止め棒で案内するようにしているた
め、ウェハ押え部をウェハのオリフラ部をも考厘した形
状にしても回転ずれを起こすことがない。
In this invention, since the centering means for the sample stage is provided outside the processing chamber, dust generation inside the processing chamber is suppressed. Also,
Since the wafer holder is guided by a rotation stopper, rotational deviation will not occur even if the wafer holder is shaped in consideration of the orientation flat portion of the wafer.

〔実施例〕〔Example〕

以下、この発明の一実施例を第1図〜第4図について説
明する。これらの図において、符号(1)〜(3)は第
5図の同一符号と同一または相当部分である。(3a)
はウェハ(3)のオリフラ部である。上部電極ユニツ)
 (10)は上部真空容器(11)に支持されている。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 4. In these figures, symbols (1) to (3) are the same as or corresponding to the same symbols in FIG. 5. (3a)
is the orientation flat portion of the wafer (3). upper electrode unit)
(10) is supported by the upper vacuum vessel (11).

密閉リング(12)は処理室と外部とを真空隔離するも
ので、密閉リング駆動ユニット(13)で駆動される。
The sealing ring (12) vacuum-isolates the processing chamber from the outside, and is driven by a sealing ring drive unit (13).

(14)は下部成極ユニット(1)の調芯手段となるガ
イドローラである。ウエノ・押え具(15)のウェハ押
え部(15a)はオリフラ部を含めたウェハ外形形状に
整合している。(15b)はガイド溝である。上部真空
容器(11)の下部に取付けたストッパ(16)に取付
けた複数個の回り止め棒(17)は、ウェハ押え具(1
5)のガイド溝(15b)と係合している。ウェハ押え
具(15)を調芯するためのガイドリンク(18)は取
付金具(19)にビン(20)により回転自在に支持さ
れている。(21)は処理室蓋板である。
(14) is a guide roller serving as centering means for the lower polarization unit (1). The wafer holding part (15a) of the wafer holding tool (15) matches the outer shape of the wafer including the orientation flat part. (15b) is a guide groove. A plurality of detent bars (17) attached to a stopper (16) attached to the lower part of the upper vacuum container (11) are connected to the wafer holding tool (1).
5) is engaged with the guide groove (15b). A guide link (18) for centering the wafer holder (15) is rotatably supported by a pin (20) on a mounting bracket (19). (21) is a processing chamber cover plate.

次に動作について説明する。ウェハ(3)が試料台(2
)上にセットされると、密閉リング駆動ユニット(13
)により密閉リング(12)が上昇して処理室蓋板(2
1)に押付けられて外部と真空遮断する。
Next, the operation will be explained. The wafer (3) is placed on the sample stage (2
), the sealing ring drive unit (13
) causes the sealing ring (12) to rise and close to the processing chamber cover plate (2).
1) It is pressed against the outside and vacuum isolated.

次に、ガイドローラ(14)を案内として下部電極ユニ
ット(1)を上昇させ、ガイドリンク(1B)を案内と
してウェハ押え具(15)を押上げると、ウェハ押え具
(15)は回り止め棒(17)でガイドされて上昇する
とともに、ウェハ押え部(15a)がウェハ(3)に対
し正しい位置で押えながら所定の電極間隔の位置まで上
昇する。ガイドリンク(18)とウェハ押え具(15)
のガイドはガイドリンク(18)先端部がテーパになっ
ていること、および、取付金具(19)との間でわずか
に回転できるギャップが設けられていることで動作がス
ムースに行われる。また、ウェハ押え具(15)と止め
棒(17)のガイドは、ウェハ押え具(15)のガイド
穴をガイド溝(15b)とすることで動作をスムースに
している。
Next, the lower electrode unit (1) is raised using the guide roller (14) as a guide, and the wafer presser (15) is pushed up using the guide link (1B) as a guide. (17) and rises, while the wafer holding part (15a) presses the wafer (3) at the correct position and rises to a position with a predetermined electrode spacing. Guide link (18) and wafer holder (15)
The guide operates smoothly because the tip of the guide link (18) is tapered and there is a gap between it and the mounting bracket (19) that allows slight rotation. Further, the guides of the wafer holder (15) and the stopper bar (17) are made to operate smoothly by using the guide holes of the wafer holder (15) as guide grooves (15b).

なお、上記実施例ではガイドリンク(18)は取付金具
(19)に対しビン(20)のみで連結し、ガイドリン
ク(18)のn1のみで試料台(2)かられずかに離れ
るようにしているが、ヒネリバネなどを組み込み強制的
に試料台(2)からガイドリンク(18)を離すように
してもよい。さらに、ウエノ・押え具(15)と試料台
(2)を調芯する手段は各種考えられる。
In addition, in the above embodiment, the guide link (18) is connected to the mounting bracket (19) only by the bottle (20), and the guide link (18) is slightly separated from the sample stage (2) only by n1. However, a twisting spring or the like may be incorporated to forcibly separate the guide link (18) from the sample stage (2). Furthermore, various means for aligning the Ueno presser (15) and the sample stage (2) are conceivable.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、下部電極ユニット(
1)の調芯手段を処理室外部に配置し、かつ、ウェハ押
え具(15)に回転防止手段を設けるようにしたので、
処理室内の発塵が抑止されかつ、ウェハ(3)のオリフ
ラ部(3a)に対して正しくウエノ・押え部(15a)
で押えることができる。
As described above, according to the present invention, the lower electrode unit (
Since the centering means of 1) is arranged outside the processing chamber and the wafer holder (15) is provided with a rotation prevention means,
Dust generation in the processing chamber is suppressed, and the wafer/holding part (15a) is correctly attached to the orientation flat part (3a) of the wafer (3).
It can be held down with

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明の一実施例の正断面図、第2図〜第4
図は第1図のものの一部拡大図で、第2図はウェハ押え
具の下面図、第3図はウェハの平面図、第4図はガイド
リンク部の一部断面正面図、第5図は従来のプラズマ処
理装置の正断面図である。 (1)・・下部電極ユニット、(2)・・試料台、(3
)・・ウェハ、(3a)・・オリフラ部、(14)・・
ガイドローラ、(15)・拳つェハ押え具、(15a)
・・ウェハ押え部、(15b)+I・ガイド溝、(16
)・・ストッパ、(17)・・回り止め棒、(19)・
・取付金具。 なお、各図中、同一符号は同一または相当部分を示す。 箆2図 児3図 晃4図 1へ 晃5区
FIG. 1 is a front sectional view of one embodiment of the present invention, and FIGS.
The figure is a partially enlarged view of the one in Figure 1, Figure 2 is a bottom view of the wafer holder, Figure 3 is a plan view of the wafer, Figure 4 is a partially sectional front view of the guide link section, and Figure 5. 1 is a front sectional view of a conventional plasma processing apparatus. (1)...lower electrode unit, (2)...sample stage, (3
)...Wafer, (3a)...Orientation flat part, (14)...
Guide roller, (15)・Fist holder, (15a)
...Wafer holding part, (15b) +I guide groove, (16
)...stopper, (17)...rotation rod, (19)...
・Mounting bracket. In each figure, the same reference numerals indicate the same or corresponding parts. Akira 2 illustration child 3 illustration Akira 4 illustration 1 Akira 5 ward

Claims (1)

【特許請求の範囲】[Claims] 半導体のウェハを下部電極ユニットの試料台にウェハ押
え具の自重で押圧固定し、プラズマを利用して処理する
プラズマ処理装置において、処理室の下部に設けた複数
個のガイドローラにより自動調芯される前記下部電極ユ
ニットと、ウェハ押え部を前記ウェハの外周形状と相似
する形状とした前記ウェハ押え具と、前記下部電極ユニ
ットの上昇時に前記ウェハ押え具に回転ずれを生じさせ
ないための複数個の回り止め棒とを備えてなることを特
徴とするプラズマ処理装置。
In plasma processing equipment that uses plasma to press and fix a semiconductor wafer to the sample stage of the lower electrode unit using its own weight, the wafer is automatically aligned using multiple guide rollers installed at the bottom of the processing chamber. the lower electrode unit, the wafer holder having a wafer holding part having a shape similar to the outer peripheral shape of the wafer, and a plurality of wafer holders for preventing rotational deviation in the wafer holder when the lower electrode unit is raised. A plasma processing apparatus characterized by comprising a rotation stopper rod.
JP62052154A 1987-03-09 1987-03-09 Plasma treatment device Pending JPS63219137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62052154A JPS63219137A (en) 1987-03-09 1987-03-09 Plasma treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62052154A JPS63219137A (en) 1987-03-09 1987-03-09 Plasma treatment device

Publications (1)

Publication Number Publication Date
JPS63219137A true JPS63219137A (en) 1988-09-12

Family

ID=12906938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62052154A Pending JPS63219137A (en) 1987-03-09 1987-03-09 Plasma treatment device

Country Status (1)

Country Link
JP (1) JPS63219137A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037262A (en) * 1988-07-15 1991-08-06 Balzers Aktiengesellschaft Holding device for a disk and application therefor
US5228940A (en) * 1990-10-03 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Fine pattern forming apparatus
JP2013161839A (en) * 2012-02-02 2013-08-19 Spp Technologies Co Ltd Substrate tray and plasma processing apparatus including the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037262A (en) * 1988-07-15 1991-08-06 Balzers Aktiengesellschaft Holding device for a disk and application therefor
US5228940A (en) * 1990-10-03 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Fine pattern forming apparatus
US5292401A (en) * 1990-10-03 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Method of forming a fine pattern
JP2013161839A (en) * 2012-02-02 2013-08-19 Spp Technologies Co Ltd Substrate tray and plasma processing apparatus including the same

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