JPS63208262A - Semiconductor mounting body - Google Patents

Abstract

PURPOSE:To mount switching semiconductor elements with good reliability under the state suitable for high frequency operation, large current operation and high breakdown strength, by electrically connecting the semiconductor elements, wiring parts on a base post and conductor parts on a circuit board one another, and making the interconnecting distances shortest when the semiconductor elements are connected in series and in parallel. CONSTITUTION:A polygonal base post 13 comprising a material characterized by electrical insulation and high thermal conductivity is fixed to a circuit board 11 having conductor paths 12. Semiconductor elements 16 are mounted on wiring parts 14, which are provided on the side surfaces of the base post 13. The semiconductor elements 16, the wiring parts 14 on the base post 13 and the conductor paths 12 on the circuit board 11 are electrically connected to one another. Therefore, the connecting length becomes short when the parts are connected in series and in parallel in the inside. A large current can be made to flow. Breakdown strength is high. The series and parallel circuits can be readily realized. A semiconductor module, which can perform high frequency operation and has excellent heat radiating property, can be obtained.

Description

[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor package, and in particular, the present invention relates to a semiconductor package, and in particular, to three-dimensionally fabricate a high-speed, high-power, and high-voltage switching semiconductor element using a polygonal columnar base pillar. This relates to a semiconductor module with a structure mounted on a semiconductor module.

(Prior Art) Recently, with the increase in the number of devices that require high-speed switching, such as robots, machine tools, inverter air conditioners, and various control machines, switching semiconductor elements are required to be faster and more complex. Furthermore, in order to improve the performance of equipment, higher output and higher voltage are similarly required.

As a typical conventional semiconductor module that meets such demands, one having the structure shown in FIG. 2 is known.

That is, numeral 1 in the figure is a highly thermally conductive metal plate such as aluminum or copper, and a circuit board 2 made of electrically insulating ceramic or the like is bonded onto this metal plate 1. On this circuit board 2, mounting parts 3a, 3b for semiconductor elements, conductor paths 4a, 4b, 4c are formed, and the mounting parts 3a, 3b, 4c are formed.
, 3b are mounted with switching semiconductor cables 5as 5b. These elements 5as and 5b are connected to the conductor paths 4a to 4c via bonding wires 6, respectively. Further, the mount portions 3a and 3b are independently connected to terminals 7a and 7b, respectively, so that the semiconductor elements 5as and 5b are connected in series or in parallel and used outside the semiconductor module. By adopting such a configuration, effects such as substantially increasing the withstand voltage and increasing the handling power can be achieved. Further, the heat generated by the switching semiconductor elements 5a and 5b is transmitted to the metal plate 1 through the circuit board 2, and is radiated to the outside air.

However, in the above-described flat plate structure semiconductor module shown in FIG.

After 7h, semiconductor elements 5a and 5b are connected in series or 11
Since a single row connection is performed, the connection length is also long. As a result, inductance due to conductor paths and terminals becomes large, which poses a problem of impeding high-speed operation. Furthermore, even when the modules themselves are connected in series or in parallel, the arrangement is planar, so the connections between the anode and cathode become three-dimensional, which results in complicated wiring connections and difficulty in assembly. This problem becomes more difficult as the number of semiconductor elements mounted on one module increases, and this poses a limit not only to implementation in three-phase applications, but also to higher frequencies. In particular, there was a problem that the above-mentioned demands for higher voltage and faster operation could not be met.

(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned conventional problems, and provides a semiconductor package (semiconductor module) equipped with a switching semiconductor suitable for high speed, high power, and high voltage. This is what we are trying to provide.

[Structure of the Invention (Means for Solving Problems)] The present invention provides a circuit board having conductor paths, and a polygonal column base made of an electrically insulating and highly thermally conductive material fixed to the circuit board. and at least one wiring section provided on each side of the base pillar, and a semiconductor element mounted on each wiring part of the base pillar, and the semiconductor element, the wiring part of the base pillar, and the circuit. This is a semiconductor device characterized in that conductor paths on a substrate are electrically connected to each other.

(Function) According to the present invention, a polygonal columnar base made of an electrically insulating and highly thermally conductive material is fixed to a circuit board having conductor paths,
When a semiconductor element is mounted on a wiring part provided on the side surface of this base pillar, and the semiconductor element, the wiring part of the base pillar, and the conductor path of the circuit board are electrically connected to each other, they are connected in series and parallel internally. It is possible to obtain a semiconductor module that has a short connection length, allows a large current to flow, and has a high withstand voltage (and is also easy to implement in series-parallel circuits, is capable of high-frequency operation, and has good heat dissipation). .

(Embodiments of the Invention) Hereinafter, embodiments of the present invention will be described in detail with reference to FIG.

11 in the figure is, for example, A-20 on both sides of an aluminum plate.
This is a circuit board having conductor paths 12 having a thickness of, for example, 50 μm on these A-nos 203Ili. A rectangular columnar base 13 made of an electrically insulating and highly thermally conductive material such as aluminum nitride (A, i'N) is fixed to the circuit board 11 so as to penetrate through the circuit board 11 . On the four side surfaces of the portion of the base pillar 13 that protrudes from the surface of the substrate 11, four wiring portions 14. ~141B (14 [1 to 1416 are not shown) are provided in total, 16 pieces. Note that similar wiring portions are provided on the four side surfaces of the portion of the base pillar 13 that protrudes toward the back side of the circuit board 11, but these are not shown. Also,
Among the four wiring sections provided on each side of the base pillar 13, for example, the two wiring sections on the right side are 143, 144, 147.
14. , (141□, 14s 2.14t s , 14
1a), a conductor band 15 extending to the adjacent side is integrally formed. Each of the wiring sections 14□ to 141
6 has a semiconductor element 16 mounted thereon. The wiring portions 143.144.14y, 14a, (lb 1.1
412.14s, 141e) is connected to the adjacent wiring section 141.142.14s, 14s, (14g
, 14 m , 1413.141 m ). Further, among the wiring parts 141 to 14, for example, the electrodes on the surface of the semiconductor element 16 mounted on the wiring part 144 (1412) are connected to the conductor path 12 of the circuit board 11 via a conductive wire 17, The semiconductor elements 16 are connected in series and parallel with the conductor band 15. External terminals 18 are connected to the circuit board 11 . A cooling heat sink 19 is provided on the lower surface of the base column 13.

According to such a configuration, a three-dimensional wiring structure is provided for the semiconductor element 16 by the conductor path 12 of the circuit board 11 and the wiring parts 141 to 1416 of the base pillar 13, and the semiconductor element 1B and the conductor path 12 and wiring parts 141 to 141
A conductor band 15 and a conductor wire 17 are integrated into a predetermined wiring section.
Since the semiconductor elements 16 are interconnected by wires, the series-parallel connection distance of the anode, cathode, gate, etc. of each semiconductor element 16 can be minimized. As a result, a semiconductor module suitable for high frequency operation, large current operation, and high withstand voltage can be realized. In addition, base pillar 13
are made of electrically insulating and highly thermally conductive A, ll'N, each wiring portion 14. of this base pillar 13. ~1416
The heat generated by the semiconductor element 16 mounted on the base pillar 1
The heat is well transmitted to the base column 13 and can be effectively radiated to the outside by the heat sink 19 provided on the lower surface of the base column 13. As a result, thermal damage to the semiconductor element 1B due to high-density mounting on the base pillar 13 can be prevented.

In the above embodiment, a heat sink is provided on the lower surface of the base column, but a heat sink may also be provided on the two sides of the base column. Moreover, although the base pillar is fixed by penetrating the circuit board, the base pillar may be simply fixed to the surface of the circuit board.

In the above embodiment, a rectangular column is used as the base column, but the base column is not limited to this. For example, a triangular, pentagonal, or hexagonal base pillar may be used.

In the above embodiment, only the wiring part is provided on the surface of the base pillar, but via fills and internal wiring are formed on the surface layer of the base pillar, and a part of the wiring part on which the semiconductor element is mounted is covered with these via fills and internal wiring. They may be connected to each other through wiring or to a conductor path on a circuit board. With this configuration, the interconnection distance between the semiconductor element, the wiring portion of the base pillar, and the conductor path of the circuit board can be further shortened.

[Effects of the Invention] As detailed above, according to the present invention, it is possible to minimize the wiring distance when connecting semiconductor elements internally in series and parallel, to easily realize a series-parallel circuit, and to achieve better heat dissipation. Therefore, it is possible to provide a semiconductor module having a structure in which a switching semiconductor element is reliably mounted in a state suitable for high frequency operation, large current operation, and high withstand voltage.

[Brief explanation of the drawing]

FIG. 1 is a perspective view of a semiconductor module showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor module. DESCRIPTION OF SYMBOLS 11... Circuit board, 12... Conductor path, 13... Base column, 141-14+s (14e-1416 are not shown)... Wiring part, 15... Conductor band, 1G...・Semiconductor element, 17...Conducting wire, 18...External terminal, 19
...cooling heat sink. Applicant's agent Patent attorney Takehiko Suzue Figure 2

Claims (2)

[Claims] (1) A circuit board having a conductor path, a polygonal pillar made of an electrically insulating and highly thermally conductive material fixed to the circuit board, and one or more pillars provided on each side of the base pillar. and a semiconductor element mounted on each wiring part of the base pillar, and the semiconductor element, the wiring part of the base pillar, and the conductor path of the circuit board are electrically connected to each other. Semiconductor mounted body. (2) A semiconductor package according to claim 1, characterized in that a heat dissipation structure is provided on the upper or lower surface of the base pillar.